Abstract: According to one embodiment, a memory system includes a nonvolatile memory and a memory controller. The nonvolatile memory includes blocks each including memory cells. The memory controller is configured to control access to the nonvolatile memory. The memory controller is configured to: set a first block, among the plurality of blocks, to be written in a first mode, the first mode being a mode in which data of a first number of bits is written into the memory cell, and set a plurality of second blocks, among the plurality of blocks, to be written in a second mode, the second mode being a mode in which data of a second number of bits is written into the memory cell, the second number being larger than the first number; acquire access information related to the second blocks; and change a writing mode of the first block which has been set in the first mode to the second mode when a first condition of the second blocks based on the access information is satisfied.

Abstract: A photonics-electronics convergence switch with which, even if an optical network system is built by combining a plurality of packet switches, the amount of processing in the packet switches does not increase, the optical network system operates with low electric power consumption, and this enables wide-range optical communication between the nodes of a communication origin and of a communication partner, includes a network processor that is an electronic circuit configured to control the functions of the packet switch, a plurality of optical transmitter-receivers having photoelectric conversion functions, and a plurality of optical switches.

Abstract: An information processing device is an information processing device that outputs a fee plan indicating a fee required to use a vehicle or battery selected by a user, the information processing device including: an acquisition unit that acquires selection information specifying a selected object selected by the user; and a processing unit that outputs the fee plan, wherein when the selected object is eligible for a subsidy, the processing unit outputs an eligible plan as the fee plan, and in the eligible plan, the fee is set to a fixed amount of money in an initial predetermined period, and the fee is set to be lower than the fixed amount of money and to be decreased with passage of time after the predetermined period has passed.

Abstract: A layered-up veneer board is formed by layering veneers up to a predetermined height such that the fiber directions of the respective veneers are alternately perpendicular to one another, and the layered-up veneer board is compressed by a compression device, to remove moisture contained in the veneers. Wood is a material in which the tensile strength in the fiber direction of the wood is higher than the tensile strength in the direction perpendicular to the fiber direction. With this layering scheme, even when stress is applied to the veneers and causes elongational deformation of these veneers as a result of compressing the layered-up veneer boards in the layering direction, elongational deformation of the veneers in the directions perpendicular to the fiber directions thereof can be reduced.

Abstract: A variable pitch mechanism for a helicopter is configured to have a simple configuration with a small number of members, and to be capable of precisely controlling a pitch angle of blades without accurate adjustment. A pitch plate 16 and a pitch plate boss 17 are slidably mounted on an outer periphery of a main mast 61, and an output shaft of a servomotor 19 is directly connected to a pitch lever 18 that vertically moves the pitch plate boss 17. By actuating the servomotor 19 and rotating the pitch lever 18, the pitch plate boss 17 and the pitch plate 16 are displaced upward or downward along the main mast 61, thereby tilting blade holders 13, 13 connected to the pitch plate 16 and changing a pitch angle of the blades 14.

Abstract: A layered-up veneer board is formed by layering veneers up to a predetermined height such that the fiber directions of the respective veneers are alternately perpendicular to one another, and the layered-up veneer board is compressed by a compression device, to remove moisture contained in the veneers. Wood is a material in which the tensile strength in the fiber direction of the wood is higher than the tensile strength in the direction perpendicular to the fiber direction. With this layering scheme, even when stress is applied to the veneers and causes elongational deformation of these veneers as a result of compressing the layered-up veneer boards in the layering direction, elongational deformation of the veneers in the directions perpendicular to the fiber directions thereof can be reduced.

Abstract: A variable pitch mechanism for a helicopter is configured to have a simple configuration with a small number of members, and to be capable of precisely controlling a pitch angle of blades without accurate adjustment. A pitch plate 16 and a pitch plate boss 17 are slidably mounted on an outer periphery of a main mast 61, and an output shaft of a servomotor 19 is directly connected to a pitch lever 18 that vertically moves the pitch plate boss 17. By actuating the servomotor 19 and rotating the pitch lever 18, the pitch plate boss 17 and the pitch plate 16 are displaced upward or downward along the main mast 61, thereby tilting blade holders 13, 13 connected to the pitch plate 16 and changing a pitch angle of the blades 14.

Abstract: A mutant glutamate-cysteine ligase (GSHA) suitable for generating ?-Glu-Val, and a method for producing ?-Glu-Val-Gly using the same are provided. ?-Glu-Val is produced by using a mutant GSHA having a specific mutation with Glu and Val as raw materials, and ?-Glu-Val-Gly is further produced by using ?-Glu-Val and Gly as raw materials. ?-Glu-Val-Gly is produced by using a mutant GSHA having a specific mutation with Glu, Val, and Gly as raw materials.

Abstract: A method for producing ?-Glu-Val-Gly comprising the step of reacting Val-Gly with a ?-glutamyl group donor in the presence of a ?-glutamyltransferase, a microorganism containing the enzyme, or a processed product thereof to generate ?-Glu-Val-Gly, wherein the ?-glutamyltransferase consists of a large subunit and a small subunit, and the small subunit has a specific mutation.

Abstract: A method for producing ?-Glu-Val-Gly comprising the step of reacting Val-Gly with a ?-glutamyl group donor in the presence of a ?-glutamyltransferase, a microorganism containing the enzyme, or a processed product thereof to generate ?-Glu-Val-Gly, wherein the ?-glutamyltransferase consists of a large subunit and a small subunit, and the small subunit has a specific mutation.

Abstract: A nitride semiconductor substrate is provided which is suitable for a high withstand voltage power device and prevents a warp and a crack from generating in a Si substrate when forming a thick nitride semiconductor layer on the substrate. A nitride semiconductor substrate 1 is prepared in such a manner that a buffer layer 3 and a semiconductor active layer 4 each comprising a group 13 nitride are stacked one by one on one principal plane of a Si single crystal substrate, the one principal plane has an offset angle of 0.1° to 1° or ?1° to ?0.1° with respect to a (111) plane, an average dopant concentration in a bulk is 1×1018 to 1×1021 cm?3, the Si single crystal substrate 2 has a SiO2 film on the back, and the total thickness of the buffer layer 3 and the semiconductor active layer 4 is 4 to 10 ?m.

Abstract: A method for producing ?-Glu-Val-Gly comprising the step of reacting Val-Gly with a ?-glutamyl group donor in the presence of a ?-glutamyltransferase, a microorganism containing the enzyme, or a processed product thereof to generate ?-Glu-Val-Gly, wherein the ?-glutamyltransferase consists of a large subunit and a small subunit, and the small subunit has a specific mutation.

Abstract: A mutant glutamate-cysteine ligase (GSHA) suitable for generating ?-Glu-Val, and a method for producing ?-Glu-Val-Gly using the same are provided. ?-Glu-Val is produced by using a mutant GSHA having a specific mutation with Glu and Val as raw materials, and ?-Glu-Val-Gly is further produced by using ?-Glu-Val and Gly as raw materials. ?-Glu-Val-Gly is produced by using a mutant GSHA having a specific mutation with Glu, Val, and Gly as raw materials.

Abstract: To configure the yaw axis control mechanism of a coaxial counter-rotating unmanned helicopter to be able to accurately control the pitch angle of the upper rotor blade by a simple configuration even if the precise adjustment is not performed. A rudder control rod is inserted into a main mast of a coaxial counter-rotating helicopter, a lower end portion thereof is connected to an output lever of the rudder servo, and a mixing rod head is fixed to an upper end portion. A link mechanism connected to the upper swash plate is attached to a side surface portion of the mixing rod head, the vertical displacement of the mixing rod head moving up and down together with the rudder control rod is converted into a displacement for tilting an upper blade holder around the spindle via the link mechanism, thereby changing the pitch angle of the upper rotor blades.

Abstract: To configure the yaw axis control mechanism of a coaxial counter-rotating unmanned helicopter to be able to accurately control the pitch angle of the upper rotor blade by a simple configuration even if the precise adjustment is not performed. A rudder control rod is inserted into a main mast of a coaxial counter-rotating helicopter, a lower end portion thereof is connected to an output lever of the rudder servo, and a mixing rod head is fixed to an upper end portion. A link mechanism connected to the upper swash plate is attached to a side surface portion of the mixing rod head, the vertical displacement of the mixing rod head moving up and down together with the rudder control rod is converted into a displacement for tilting an upper blade holder around the spindle via the link mechanism, thereby changing the pitch angle of the upper rotor blades.

Abstract: A nitride semiconductor substrate is provided which is suitable for a high withstand voltage power device and prevents a warp and a crack from generating in a Si substrate when forming a thick nitride semiconductor layer on the substrate. A nitride semiconductor substrate 1 is prepared in such a manner that a buffer layer 3 and a semiconductor active layer 4 each comprising a group 13 nitride are stacked one by one on one principal plane of a Si single crystal substrate, the one principal plane has an offset angle of 0.1° to 1° or ?1° to ?0.1° with respect to a (111) plane, an average dopant concentration in a bulk is 1×1018 to 1×1021 cm?3, the Si single crystal substrate 2 has a SiO2 film on the back, and the total thickness of the buffer layer 3 and the semiconductor active layer 4 is 4 to 10 ?m.

Abstract: A method for producing ?-Glu-Val-Gly comprising the step of reacting Val-Gly with a ?-glutamyl group donor in the presence of a ?-glutamyltransferase, a microorganism containing the enzyme, or a processed product thereof to generate ?-Glu-Val-Gly, wherein the ?-glutamyltransferase consists of a large subunit and a small subunit, and the small subunit has a specific mutation.

Abstract: A nitride semiconductor substrate suitable for a normally-off type high breakdown-voltage device and a method of manufacturing the substrate are provided allowing both a higher threshold voltage and improvement in current collapse. In a nitride semiconductor substrate 10 having a substrate 1, a buffer layer 2 formed on one principal plane of the substrate 1, an intermediate layer 3 formed on the buffer layer 2, an electron transport layer 4 formed on the intermediate layer 3, and an electron supply layer 5 formed on the electron transport layer 4, the intermediate layer 3 has a thickness of 200 nm to 1500 nm and a carbon concentration of 5×1016 atoms/cm3 to 1×1018 atoms/cm3 and is of AlxGa1-xN (0.05?x?0.24), and the electron transport layer 4 has a thickness of 5 nm to 200 nm and is of AlyGa1-yN (0?y?0.04).

Abstract: In a nuclear power plant, a corrosion-resistant oxide film on a surface of the metal component of a reactor structure is exposed to a high-temperature water, the corrosion-resistant oxide film containing an oxide having a property of a P-type semiconductor, and a catalytic substance having a property of an N-type semiconductor is deposited on the oxide film. The oxide film maintains the property of the P-type semiconductor.

Abstract: In a method of reducing corrosion of a material constituting a nuclear reactor structure, an electrochemical corrosion potential is controlled by injecting a solution or a suspension containing a substance generating an excitation current by an action of at least one of radiation, light, and heat existing in a nuclear reactor, or a metal or a metallic compound forming the substance generating the excitation current under the condition in the nuclear reactor to allow the substance generating the excitation current to adhere to the surface of the nuclear reactor structural material, and by injecting hydrogen in cooling water of the nuclear reactor while controlling the hydrogen concentration in a feed water.