Patents by Inventor Shunichi Suzuki

Shunichi Suzuki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20110081678
    Abstract: The present invention provides a method for efficiently producing a ?-alanyl-amino acid (e.g., carnosine) or derivative thereof. Specifically, it provides a method for producing a ?-alanyl-amino acid (e.g., ?-alanyl-histidine) or derivative thereof, by reacting a ?-alanyl ester or a ?-alanyl amide and an amino acid or derivative thereof in the presence of an enzyme or an enzyme-containing product that has an ability to form the ?-alanyl-amino acid (e.g., ?-alanyl-histidine) or derivative thereof from the ?-alanyl ester or the ?-alanyl amide and the amino acid (e.g., histidine) or derivative thereof. The present invention also provides a protein which is able to catalyze production of a ?-alanyl-amino acid or derivative thereof from a ?-alanyl ester or a ?-alanyl amide and an amino acid or derivative thereof, and a polynucleotide encoding said protein.
    Type: Application
    Filed: November 10, 2010
    Publication date: April 7, 2011
    Inventors: Rie Takeshita, Yasuaki Takakura, Shunichi Suzuki, Kenzo Yokozeki
  • Publication number: 20110062556
    Abstract: A compound semiconductor substrate which inhibits the generation of a crack or a warp and is preferable for a normally-off type high breakdown voltage device, arranged that a multilayer buffer layer 2 in which AlxGa1-xN single crystal layers (0.6?X?1.0) 21 containing carbon from 1×1018 atoms/cm3 to 1×1021 atoms/cm3 and AlyGa1-yN single crystal layers (0.1?y?0.5) 22 containing carbon from 1×1017 atoms/cm3 to 1×1021 atoms/cm3 are alternately and repeatedly stacked in order, and a nitride active layer 3 provided with an electron transport layer 31 having a carbon concentration of 5×1017 atoms/cm3 or less and an electron supply layer 32 are deposited on a Si single crystal substrate 1 in order. The carbon concentrations of the AlxGa1-xN single crystal layers 21 and that of the AlyGa1-yN single crystal layers 22 respectively decrease from the substrate 1 side towards the above-mentioned active layer 3 side. In this way, the compound semiconductor substrate is produced.
    Type: Application
    Filed: September 10, 2010
    Publication date: March 17, 2011
    Applicant: COVALENT MATERIALS CORPORATION
    Inventors: Jun KOMIYAMA, Kenichi Eriguchi, Hiroshi Oishi, Yoshihisa Abe, Akira Yoshida, Shunichi Suzuki
  • Publication number: 20100330622
    Abstract: A method for manufacturing a product of a reaction catalyzed by a protein having 2-oxoglutarate-dependent enzyme activity such as (2S,3R,4S)-4-hydroxy-L-isoleucine or a salt thereof using a bacterium transformed with a DNA fragment containing a gene coding for a protein having 2-oxoglutarate-dependent enzyme activity such as L-isoleucine dioxygenase activity; and wherein said bacterium has the ability to produce a product such as (2S,3R,4S)-4-hydroxy-L-isoleucine.
    Type: Application
    Filed: June 21, 2010
    Publication date: December 30, 2010
    Inventors: Sergey Vasilievich Smirnov, Natalia Nikolaevna Samsonova, Veronika Aleksandrovna Kotliarova, Natalia Yurievna Rushkevich, Olga Sergeevna Beznoschenko, Tatyana Aleksandrovna Bachina, Yuki Imabayashi, Masakazu Sugiyama, Shunichi Suzuki
  • Patent number: 7858348
    Abstract: The present invention provides genes that encode the N-acetyl-(R,S)-?-amino acid acylases. The N-acetyl-(R,S)-?-amino acid acylases were isolated and purified from bacterial cells and the nucleotide sequences were determined. A host, such as Escherichia coli, was used to construct a high-expression system for these genes. The N-acetyl-(R)-?-amino acid acylase produced by Burkholderia sp. AJ110349 (FERM BP-10366) includes, for example, the protein having the amino acid sequence shown in SEQ. ID. NO. 8. The gene encoding this enzyme includes, for example, the DNA having the nucleotide sequence as shown in SEQ. ID. NO. 7. The N-acetyl-(S)-?-amino acid acylase produced by Burkholderia sp. AJ110349 (FERM BP-10366) includes, for example, the protein having the amino acid sequence shown in SEQ. ID. NO. 10. The gene encoding this enzyme includes, for example, the DNA having the nucleotide sequence shown inshown in SEQ. ID. NO. 9. The N-acetyl-(R)-?-amino acid acylase produced by Variovorax sp.
    Type: Grant
    Filed: July 24, 2007
    Date of Patent: December 28, 2010
    Assignee: Ajinomoto Co., Inc.
    Inventors: Shunichi Suzuki, Yuki Imabayashi, Kunihiko Watanabe, Hisashi Kawasaki, Tsuyoshi Nakamatsu
  • Publication number: 20100317068
    Abstract: The present invention describes a method for generating a serine derivative and an optically active isomer thereof by a convenient technique, and an enzyme and the like useful in the method. In the presence of the following protein (A) and/or (B) having an enzymatic activity, an ?-amino acid is reacted with an aldehyde to form a serine derivative: (A) a protein comprising the amino acid sequence of SEQ ID NO:5, and (B) a protein comprising an amino acid sequence of SEQ ID NO: 5, but which includes substitution, deletion, insertion and addition of one or more amino acids and is able to catalyze the reaction to form the serine derivative.
    Type: Application
    Filed: July 15, 2010
    Publication date: December 16, 2010
    Inventors: Shinji Kuroda, Masakazu Sugiyama, Kunihiko Watanabe, Shunichi Suzuki, Kenzo Yokozeki, Tatsuki Kashiwagi
  • Patent number: 7851610
    Abstract: A novel protein which has an activity to transport hydantoin compounds is described, as well as a recombinant expressing this transporter protein. From Microbacterium liquefaciens strain AJ3912, a novel gene was discovered to encode a protein which is able to transport hydantoin compounds. A recombinant with an excellent ability to uptake hydantoin compounds is obtained by introducing and expressing the novel gene, called mhp, using gene recombination techniques.
    Type: Grant
    Filed: November 28, 2007
    Date of Patent: December 14, 2010
    Assignee: Ajinomoto Co., Ltd.
    Inventors: Shunichi Suzuki, Kenzo Yokozeki, Peter Henderson
  • Publication number: 20100244100
    Abstract: The present invention provides a compound semiconductor substrate, including: a single-crystal silicon substrate having a crystal face with (111) orientation; a first buffer layer which is formed on the single-crystal silicon substrate and is constituted of an AlxGa1-xN single crystal (0<x?1); a second buffer layer which is formed on the first buffer layer and is composed of a plurality of first unit layers each having a thickness of from 250 nm to 350 nm and constituted of an AlyGa1-yN single crystal (0?y<0.1) and a plurality of second unit layers each having a thickness of from 5 nm to 20 nm and constituted of an AlzGa1-zN single crystal (0.9<z?1), said pluralities of first and second unit layers having been alternately superposed; and a semiconductor device formation region which is formed on the second buffer layer and includes at least one nitride-based semiconductor single-crystal layer.
    Type: Application
    Filed: March 25, 2010
    Publication date: September 30, 2010
    Applicant: COVALENT MATERIALS CORPORATION
    Inventors: Hiroshi Oishi, Jun Komiyama, Kenichi Eriguchi, Yoshihisa Abe, Akira Yoshida, Shunichi Suzuki
  • Publication number: 20100221795
    Abstract: It is an object of the present invention to provide a procedure for realizing inexpensive and simple production of 3-indole-pyruvic acid. A transformant is made using a polynucleotide having a specific nucleotide sequence encoding a protein having an oxidase activity, and oxidase is generated by culturing the transformant in a medium to accumulate the oxidase in the medium and/or the transformant. Further, tryptophan is converted into 3-indole-pyruvic acid in the presence of the transformant and/or a culture thereof to produce 3-indole-pyruvic acid.
    Type: Application
    Filed: February 24, 2010
    Publication date: September 2, 2010
    Applicant: AJINOMOTO CO. INC
    Inventors: YASUAKI TAKAKURA, SEIICHI HARA, TOSHIKI TABA, SHUNICHI SUZUKI, MASAKAZU SUGIYAMA, KUNIHIKO WATANABE, KENZO YOKOZEKI
  • Publication number: 20090253168
    Abstract: A novel protein which has an activity to transport hydantoin compounds is described, as well as a recombinant expressing this transporter protein. From Microbacterium liquefaciens strain AJ3912, a novel gene was discovered to encode a protein which is able to transport hydantoin compounds. A recombinant with an excellent ability to uptake hydantoin compounds is obtained by introducing and expressing the novel gene, called mhp, using gene recombination techniques.
    Type: Application
    Filed: November 28, 2007
    Publication date: October 8, 2009
    Inventors: Shunichi Suzuki, Kenzo Yokozeki, Peter Henderson
  • Patent number: 7582454
    Abstract: The present invention relates to a 5-substituted hydantoin racemase, which efficiently catalyzes racemization reactions at a high optimum temperature for racemization reactions, DNA coding for the racemase, and processes for producing optically active amino acids.
    Type: Grant
    Filed: July 12, 2006
    Date of Patent: September 1, 2009
    Assignee: Ajinomoto Co. Inc.
    Inventors: Shunichi Suzuki, Norimasa Onishi, Kenzo Yokozeki
  • Patent number: 7575910
    Abstract: The present invention provides a method for producing L-fuculose and L-fucose which is suitable as an industrial method. L-Fuculose is synthesized from L-fucitol in the presence of a microorganism-derived protein having a dehydrogenase activity which results in production of L-fuculose from L-fucitol. The reaction system preferably contains NADH oxidase. L-Fuculose thus synthesized is then converted into L-fucose.
    Type: Grant
    Filed: September 18, 2006
    Date of Patent: August 18, 2009
    Assignee: Ajinomoto Co., Inc.
    Inventors: Shunichi Suzuki, Kunihiko Watanabe
  • Publication number: 20090065812
    Abstract: Provides is a compound semiconductor substrate about which the thickness of its nitride semiconductor single crystal layer can be made large while the generation of cracks, crystal defects or the like is restrained in the nitride semiconductor single crystal layer. The substrate has a first intermediate layer 110 formed on a Si single crystal substrate 100 having a crystal plane orientation of {111}. In the layer 110, a first metal compound layer 110a made of any one of TiC, TiN, VC and VN, and a second metal compound layer 110b made of any one of compounds which are different from the compound of the first metal compound layer out of TiC, TiN, VC and VN are laminated in this order alternately each other over the Si single crystal.
    Type: Application
    Filed: September 4, 2008
    Publication date: March 12, 2009
    Inventors: Yoshihisa ABE, Jun Komiyama, Shunichi Suzuki, Hiroshi Oishi, Akira Yoshida, Hideo Nakanishi
  • Publication number: 20080308198
    Abstract: There are provided an austenitic stainless steel having high stress corrosion crack resistance, characterized by containing, in percent by weight, 0.030% or less C, 0.1% or less Si, 2.0% or less Mn, 0.03% or less P, 0.002% or less S, 11 to 26% Ni, 17 to 30% Cr, 3% or less Mo, and 0.01% or less N, the balance substantially being Fe and unavoidable impurities; a manufacturing method for an austenitic stainless steel, characterized in that a billet consisting of the said austenitic stainless steel is subjected to solution heat treatment at a temperature of 1000 to 1150° C.; and a pipe and a in-furnace structure for a nuclear reactor to which the said austenitic stainless steel is applied.
    Type: Application
    Filed: January 13, 2005
    Publication date: December 18, 2008
    Applicants: MITSUBISHI HEAVY INDUSTRIES, LTD., THE TOKYO ELECTRIC POWER COMPANY, INC.
    Inventors: Yasuhiro Sakaguchi, Toshihiko Iwamura, Hiroshi Kanasaki, Hidehito Mimaki, Masaki Taneike, Shunichi Suzuki, Kenrou Takamori, Suguru Ooki, Naoki Anahara, Naoki Hiranuma, Toshio Yonezawa
  • Patent number: 7449101
    Abstract: In a method of reducing corrosion of a metal material, a substance such as semiconductor for generating an electric current by thermal excitation is coated or adhered on a metal material surface, to be exposed to a water having a high temperature of 150° C. or more, of a boiler and ducts or pipes, to which hot water heated by the boiler contacts, of a thermal electric power plant or a nuclear reactor structural material or ducts or pipes surrounding the reactor in a nuclear power plant.
    Type: Grant
    Filed: February 5, 2003
    Date of Patent: November 11, 2008
    Assignees: Kabushiki Kaisha Toshiba, The Tokyo Electric Power Company, Incorporated, Ishikawajima - Harima Heavy Industries Co., Ltd.
    Inventors: Masato Okamura, Yukio Henmi, Nagayoshi Ichikawa, Tetsuo Oosato, Seiji Yamamoto, Kazuo Murakami, Kenji Yamazaki, Junichi Takagi, Tadasu Yotsuyanagi, Shunichi Suzuki, Kenro Takamori, Mitsuru Sambongi, Yuichi Fukaya, Takasi Hirano
  • Patent number: 7445921
    Abstract: The present invention provides a transglycosylation method and a protein catalyzing a transglycosylation reaction. A reaction of transferring a galactosyl?1?3N-acetylgalactosaminyl group from a sugar donor containing a sugar chain having a galactosyl?1?3N-acetylgalactosaminyl group bound thereto at the ?-position, to a sugar chain acceptor, is carried out in the presence of a protein having an endo-?-N-acetylgalactosaminidase activity and a transglycosylation activity.
    Type: Grant
    Filed: September 23, 2005
    Date of Patent: November 4, 2008
    Assignee: Ajinomoto Co., Inc.
    Inventors: Fusako Oura, Kiyotaka Fujita, Noriko Nagamine, Kenji Yamamoto, Masanori Yamaguchi, Hayato Ozawa, Takane Katayama, Hidehiko Kumagai, Shunichi Suzuki
  • Publication number: 20080241895
    Abstract: The present invention provides genes that encode the N-acetyl-(R,S)-?-amino acid acylases. The N-acetyl-(R,S)-?-amino acid acylases were isolated and purified from bacterial cells and the nucleotide sequences were determined. A host, such as Escherichia coli, was used to construct a high-expression system for these genes. The N-acetyl-(R)-?-amino acid acylase produced by Burkholderia sp. AJ110349 (FERM BP-10366) includes, for example, the protein having the amino acid sequence shown in SEQ. ID. NO. 8. The gene encoding this enzyme includes, for example, the DNA having the nucleotide sequence as shown in SEQ. ID. NO. 7. The N-acetyl-(S)-?-amino acid acylase produced by Burkholderia sp. AJ110349 (FERM BP-10366) includes, for example, the protein having the amino acid sequence shown in SEQ. ID. NO. 10. The gene encoding this enzyme includes, for example, the DNA having the nucleotide sequence shown inshown in SEQ. ID. NO. 9. The N-acetyl-(R)-?-amino acid acylase produced by Variovorax sp.
    Type: Application
    Filed: July 24, 2007
    Publication date: October 2, 2008
    Inventors: Shunichi Suzuki, Yuki Imabayashi, Kunihiko Watanabe, Hisashi Kawasaki, Tsuyoshi Nakamatsu
  • Publication number: 20080224268
    Abstract: To provide a nitride semiconductor single crystal substrate comprising a Si substrate and a nitride semiconductor film which has semi-polar (10-1m) plane (m: natural number) and a thickness of 1 ?m or more, the nitride semiconductor single crystal substrate being suitably used for a light-emitting device, the nitride semiconductor single crystal substrate being suitably used for a light-emitting device, this invention provides a nitride semiconductor single crystal substrate comprising a Si substrate having an off-cut angle of 1 to 35° in the <110> direction from the <100> direction, a buffer layer 2a (2b) made of at least one of SiC or BP formed on the Si substrate, a AlN buffer layer formed on the buffer layers, and a nitride semiconductor single crystal film formed on the AlN buffer layer, the nitride semiconductor single crystal film comprising any one of GaN (10-1m), AlN (10-1m), InN (10-1m) or a GaN (10-1m)/and AlN (10-1m) superlattice film.
    Type: Application
    Filed: February 29, 2008
    Publication date: September 18, 2008
    Inventors: Yoshihisa Abe, Jun Komiyama, Shunichi Suzuki, Akira Yoshida, Hideo Nakanishi
  • Publication number: 20080145174
    Abstract: A channel fastener, which is capable of preventing or suppressing the plastic deformation of a leaf spring when the other device such as a fuel assembly and a tool is brought into contact therewith from the upper side, is provided. The channel fastener (6) comprises a leaf spring guard (9) having a leg body (13) formed in a roughly L-shape in horizontal cross section and extending vertically and a flat upper plate (12) connected to the leg body (13) at the upper end of the leg body (13) and extending horizontally, and a leaf spring (8) having an upper plate part (15) fixed to the leaf spring guard flat upper plate (12) and extending along the leaf spring guard flat upper plate (12) and at least two legs (17) connected to the upper plate part (15) and extending downward along the leaf spring guard leg body (13). One or a plurality of projected parts (21) projected upward are formed on the leaf spring guard fiat upper plate (12).
    Type: Application
    Filed: December 20, 2005
    Publication date: June 19, 2008
    Applicant: The Tokyo Electric Power Company, Inc.
    Inventors: Shunichi Suzuki, Yoshio Takagi, Yoshiaki Ishii, Akihiro Miyazaki, Tadashi Teramatsu, Akihiko Fujita, Masatake Taguchi, Shingo Yamaguchi
  • Patent number: 7368757
    Abstract: A back electrode 6 is formed in the back of a Si single crystal substrate 2 of a compound semiconductor in which an n-type 3C-SiC single crystal buffer layer 3 having a thickness of 0.05-2 ?m, a carrier concentration of 1016-1021/cm3, a hexagonal InwGaxAl1-w-xN single crystal buffer layer 4 (0?w<1, 0?x<1, w+x<1) having a thickness of 0.01-0.5 ?m, and an n-type hexagonal InyGazAl1-y-zN single crystal layer 5 (0?y<1, 0<z?1, y+z?1) having a thickness of 0.1-5 ?m and a carrier concentration of 1011-1016/cm3 are stacked in order on an n-type Si single crystal substrate top 2 having a crystal-plane orientation {111}, a carrier concentration of 1016-1021/cm3, and a surface electrode 7 is formed on a surface of a hexagonal InyGazAl1-y-zN single crystal layer 5, so as to provide a compound semiconductor device which causes little energy loss and allows an high efficiency and a high breakdown voltage.
    Type: Grant
    Filed: December 12, 2005
    Date of Patent: May 6, 2008
    Assignee: Covalent Materials Corporation
    Inventors: Jun Komiyama, Yoshihisa Abe, Shunichi Suzuki, Hideo Nakanishi
  • Patent number: 7361490
    Abstract: The present invention provides a method of producing optically active amino acids from 5-substituted hydantoin by isolating a hydantoinase gene and an N-carbamyl-L-amino acid hydrolase gene involved in an ability to convert 5-substituted hydantoin or N-carbamylamino acid into optically active amino acids from a microorganism of the genus Microbacterium having the above ability and by improving gene amplification and transcriptional and translational activities thereby preparing a recombinant wherein the amount of the desired enzymes produced is increased. The hydantoinase gene is, for example, a DNA encoding for a protein having a hydantoinase activity, which has the nucleotide sequence set forth in SEQ ID NO:1 in the Sequence. The N-carbamyl-L-amino acid hydrolase gene is, for example, a DNA encoding for a protein having an N-carbamyl-L-amino acid hydrolase activity, which has the nucleotide sequence set forth in SEQ ID NO:3 in the Sequence.
    Type: Grant
    Filed: June 29, 2006
    Date of Patent: April 22, 2008
    Assignee: AJinomoto Co., Inc.
    Inventors: Yasuhiro Takenaka, Shunichi Suzuki, Norimasa Onishi, Kenzo Yokozeki