Abstract: A semiconductor device, including a first gate, a second gate, a third gate, a first semiconductor layer, a second semiconductor layer, a source, and a drain, is provided. The first semiconductor layer is located between the first gate and the second gate. The second gate is located between the first semiconductor layer and the second semiconductor layer. The second semiconductor layer is located between the second gate and the third gate. The source is electrically connected to the first semiconductor layer and the second semiconductor layer. The drain is electrically connected to the first semiconductor layer and the second semiconductor layer.

Abstract: A semiconductor device and its manufacturing method are provided. The semiconductor device includes a substrate, a semiconductor structure, a gate dielectric layer, and a gate. The semiconductor structure is disposed above the substrate. The semiconductor structure includes two thick portions and a thin portion located between the two thick portions. A thickness of the two thick portions is larger than a thickness of the thin portion. The gate dielectric layer is disposed on the semiconductor structure. The gate is disposed on the gate dielectric layer. A width of the gate is larger than a width of the thin portion, and the gate is overlapped with a part of the two thick portions and the thin portion in a normal direction of a top surface of the substrate. A resistivity of at least a part of the two thick portions gradually increases with proximity to the substrate.

Abstract: A driving method and device for a shift register. In a data refreshing phase, loading an input signal having a pulse level to an input signal end, loading a control clock pulse signal to a control clock signal end, loading a noise reduction clock pulse signal to a noise reduction clock signal end, controlling a cascade signal end of the shift register to output a cascade signal having a pulse level, and controlling a drive signal end of the shift register to output a drive signal having a pulse level; in a data holding phase, loading a fixed voltage signal to the input signal end, loading a first set signal to the control clock signal end, loading a second set signal to the noise reduction clock signal end, controlling the cascade signal end to output a fixed voltage signal having a second level.

Abstract: In one embodiment, a process is performed during controlling Autonomous Driving Vehicle (ADV). Microphone signals sense sounds in an environment of the ADV. The microphone signals are combined and filtered to form an audio signal having the sounds sensed in the environment of the ADV. A neural network is applied to the audio signal to detect a presence of an audio signature of an emergency vehicle siren. If the siren is detected, a change in the audio signature to make a determination as to whether the emergency vehicle siren is a) moving towards the ADV, or b) not moving towards the ADV. The ADV can make a driving decision, such as slowing down, stopping, and/or steering to a side, based on if the emergency vehicle siren is moving towards the ADV.

Abstract: A thin film transistor includes a semiconductor layer, a first gate electrode disposed at one side of the semiconductor layer, a first gate insulating layer disposed between the first gate electrode and the semiconductor layer, a second gate electrode and a third gate electrode disposed at another side of the semiconductor layer, and a second gate insulating layer. The second gate electrode is separated from the third gate electrode. The second gate insulating layer is disposed between the second and third gate electrodes and the semiconductor layer. An orthogonal projection of the first gate electrode on the semiconductor layer is partially overlapped with an orthogonal projection of the second gate electrode on the semiconductor layer. The orthogonal projection of the first gate electrode on the semiconductor layer is partially overlapped with an orthogonal projection of the third gate electrode on the semiconductor layer.

Abstract: A stretchable electronic device includes a substrate, a plurality of electronic elements, and a conductive wiring. The electronic elements and the conductive wiring are disposed on the substrate, and the conductive wiring is electrically connected to the electronic elements. The conductive wiring is formed by stacking an elastic conductive layer and a non-elastic conductive layer. A fracture strain of the elastic conductive layer is greater than a fracture strain of the non-elastic conductive layer, and the non-elastic conductive layer includes a plurality of first fragments which are separated from one another.

Abstract: A display device, including a flexible substrate, multiple lighting units, and multiple signal lines, is provided. The lighting units and the signal lines are located on the flexible substrate, and the signal lines are respectively electrically connected to the lighting units. Each signal line includes multiple first conductive patterns, at least one second conductive pattern, and at least one third conductive pattern. The first conductive patterns are located on the flexible substrate. The second conductive pattern is located on the first conductive patterns, and two ends of each second conductive pattern are respectively connected to two first conductive patterns. In a stretched state, the two first conductive patterns twist the commonly connected second conductive pattern. The third conductive pattern is superimposed on the second conductive pattern.

Abstract: The present application relates to the field of superalloy, disclosing a method for internal stress regulation in superalloy disk forgings by pre-spinning. The method includes: Step S1, determining a target revolution for regulating internal stress in the disk forgings, and determining a target deformation magnitude of plastic deformation required for regulating the internal stress by the pre-spinning of the disk forgings; and Step S2, performing the pre-spinning of the disk forgings by the target revolution, monitoring a deformation magnitude of the disk forgings, and stopping the pre-spinning when a monitored deformation magnitude of the disk forgings reaches the target deformation magnitude.

Abstract: A stretchable electronic device includes a substrate, a plurality of electronic elements, and a conductive wiring. The electronic elements and the conductive wiring are disposed on the substrate, and the conductive wiring is electrically connected to the electronic elements. The conductive wiring is formed by stacking an elastic conductive layer and a non-elastic conductive layer. A fracture strain of the elastic conductive layer is greater than a fracture strain of the non-elastic conductive layer, and the non-elastic conductive layer includes a plurality of first fragments which are separated from one another.

Abstract: A shift register, a driving method, a driving control circuit and a display device. The method comprises: at a data refresh stage (T10), applying to an input signal end (IP) an input signal having a pulse level, applying a control clock pulse signal to a control clock signal end, and applying a noise reduction clock pulse signal to a noise reduction clock signal end; at a noise reduction holding phase (T21-1), applying a fixed voltage signal to the input signal end (IP), applying a fixed voltage signal to the control clock signal end, and applying a fixed voltage signal to the noise reduction clock signal end; and at a noise reduction enhancement stage (T22-1), applying a fixed voltage signal to the input signal end (IP), applying a fixed voltage signal to the control clock signal end, and applying a clock pulse signal to the noise reduction clock signal end.

Abstract: An electronic apparatus and a data transmission method thereof are provided. The data transmission method is adapted to the electronic apparatus including a touch screen, and the data transmission method includes the following steps. An image frame is displayed through the touch screen. A connection with another electronic apparatus placed on the touch screen is established. Position information of said another electronic apparatus on the touch screen is detected through the touch screen, to capture a partial frame from the image frame according to the position information of said another electronic apparatus. Feature information of data to be transmitted is obtained from the partial frame. The data to be transmitted is sent to said another electronic apparatus via the connection according to the feature information.

Abstract: In preparing a built-up object by depositing beads, in a step of dividing into the bead model, a trapezoidal bead model a cross section of which is a trapezoidal shape is applied to a position where the bead is formed in a portion not adjacent to an existing bead, and a parallelogram bead model a cross section of which is a parallelogram is applied to a position where the bead is formed adjacent to a bead that is already formed, in the parallelogram bead model opposite sides in the deposition direction of the bead being parallel to each other, and opposite sides in the bead arrangement direction being parallel to a side of another bead mode that is adjacent.

Abstract: An electronic apparatus and an object information recognition method by using touch data thereof are provided. Touch sensing is performed in the case where no object touches a touch panel to obtain a specific background frame through the touch panel. A current touch sensing frame is obtained through the touch panel. Touch background data of a plurality of first frame cells in the specific background frame is respectively subtracted from touch raw data of a plurality of second frame cells in the current touch sensing frame to obtain a background removal frame including a plurality of cell values. The background removal frame is transformed into a touch sensing image. The touch sensing image is inputted to a trained neural network model to recognize object information of a touch object.

Abstract: A method of delivery of an ultrasound-guided drug-loaded microbubble, an electronic device, and a computer-readable storage medium are provided. The method includes: emitting a first ultrasonic signal by utilizing an array transducer, to break a drug-loaded microbubble in a current breaking region; emitting a second ultrasonic signal by utilizing the array transducer, to obtain an ultrasound image; identifying a contour of a blood vessel of the breaking region based on the ultrasound image; and updating a characteristic parameter of the breaking region based on the contour of the blood vessel. According to the method, the breaking region is updated in real time based on the contour of the blood vessel, so that delivery accuracy of a drug-loaded microbubble is improved, and avoiding unnecessary tissue damage.

Abstract: Disclosed are a composition for ultrasound contrast agent, an ultrasound contrast agent, and a preparation method thereof. The composition for ultrasound contrast agent includes a lipid, a stabilizer and an acoustic-induced deformation material; relative to 100 parts by weight of the lipid, the content of the stabilizer is 20 to 100 parts by weight, and the content of the acoustic-induced deformation material is 1 to 15 parts by weight; and the acoustic-induced deformation material is deformed under a specific acoustic wave, and the characteristic response frequency of the acoustic-induced deformation material is 0.01 MHz to 50 MHz. The microbubble ultrasound contrast agent has better stability, thereby it circulates in vivo for a longer time, and has lower mechanical index, so that the inertial cavitation occurs under a low-energy ultrasonic wave.

Abstract: A display substrate includes a base substrate, a light-emitting structure layer located on the base substrate, an encapsulation structure layer located on the light-emitting structure layer, a reflection layer located on the encapsulation structure layer, a hydrophilic material layer located on the reflection layer, and an optical adhesive layer located on the hydrophilic material layer.

Abstract: Disclosed are a composition for magnetic ultrasound contrast agent, a magnetic ultrasound contrast agent, a magnetic microbubble ultrasound contrast agent, and a preparation method thereof. The composition for magnetic ultrasound contrast agent includes a lipid, a surfactant and a magnetic nanoparticle; the surfactant consists of a surfactant A and a surfactant B, the surfactant A is in a free state, and the surfactant B is in a bonding state and is modified on the surface of the magnetic nanoparticle; the HLB value of the surfactant A is greater than 8. The magnetic microbubble ultrasound contrast agent obtained from the composition for magnetic ultrasound contrast agent has higher stability and may meet requirements for in vivo cyclic targeted delivery, thereby achieving the local high-concentration targeted delivery of a medication.

Abstract: A building time for building an additively-manufactured object is calculated on the basis of the inter-pass time and the welding pass time and is compared with a preset upper limit value, and welding conditions in a depositing plan are repeatedly modified until the building time is equal to or less than the upper limit value. Alternatively, corrections are repeatedly performed until the shape difference between a building shape of built-up object shape data relating to the additively-manufactured object created on the basis of the inter-pass time and the inter-pass temperature, and a building shape of three-dimensional shape data, is smaller than a near net value.

Abstract: An active device substrate includes a substrate, an active device and a barrier layer. The active device is located on the substrate. The barrier layer is located on the active device. The barrier layer includes a first hydrogen atom distribution region and a second hydrogen atom distribution region. The first hydrogen atom distribution region includes silicon nitride and hydrogen atom. The first hydrogen atom distribution region is located between the second hydrogen atom distribution region and the substrate. The second hydrogen atom distribution region includes silicon nitride and hydrogen atom. The concentration of nitrogen atom in the first hydrogen atom distribution region is less than the concentration of nitrogen atom in the second hydrogen atom distribution region. The highest concentration of hydrogen atom in the first hydrogen atom distribution region is greater than the highest concentration of hydrogen atom in the second hydrogen atom distribution region.