Abstract: A coil substrate for wireless power transmission includes: an insulating substrate including a first surface and a second surface; a first wiring portion disposed on the first surface, wherein the first wiring portion includes first spiral patterns and a section in which opposing ends of each of the first spiral patterns are disposed parallel to each other; a second wiring portion disposed on the second surface and including second spiral patterns, wherein opposing ends of each of the second spiral patterns are spaced apart from each other; and conductive vias alternately connecting the first spiral patterns and the second spiral patterns to each other to form coil turns.

Abstract: Provided are a network backup device and a network system. The network backup device includes a first connector configured to connect with one or more ports of a first network equipment, a second connector configured to connect with one or more second network equipment, a third connector configured to connect with a third network equipment, a switching module configured to aggregate data transmitted from the second connector, transfer the aggregated data to the third connector, and distribute data transmitted from the third connector to the second connector, and a switch configured to, in response to a fault occurring in a port of the first network equipment, switch from a connection between the second connector and the faulty port of the first network equipment to a connection between the second connector and the switching module.

Abstract: A wireless power receiver and a method for manufacturing the same is disclosed, The wireless power receiver includes a substrate; an antenna configured to transmit a control signal, a coil configured to receive power, and a control unit configured to generate the control signal for wireless receiving power, to convert a received power, and to output a converted power to a load, wherein the antenna, the coil, and the control unit are mounted on the substrate.

Abstract: A semiconductor device and a method of fabricating the same are provided. The semiconductor device comprises a first multi-channel active pattern which is defined by a field insulating layer, extends along a first direction, and includes a first portion and a second portion; a gate electrode which extends along a second direction different from the first direction and is formed on the first portion; and a first source/drain region which is formed around the second portion protruding further upward than a top surface of the field insulating layer and contacts the field insulating layer, wherein the second portion is disposed on both sides of the first portion in the first direction and is more recessed than the first portion, a top surface of the first portion and a top surface of the second portion protrude further upward than the top surface of the field insulating layer, and a profile of sidewalls of the second portion is continuous.

Abstract: A wireless power transmitting method performed in a wireless power transmitting apparatus includes transmitting a long beacon signal via a transmitting coil; determining whether or not a response signal to the long beacon signal has been received at a wireless communicator; determining whether or not a degree of change in a level of impedance of the transmitting coil is within a reference range responsive to the determination that the response signal is not received; and wirelessly transmitting the power responsive to the determination: that the response signal has been received or that the degree of change is within the reference range.

Abstract: A semiconductor device includes a first multi-channel active pattern defined by a field insulating layer and extending along a first direction, the first multi-channel active pattern including a first portion having a top surface protruding further in an upward direction than a top surface of the field insulating layer and a second portion on both sides of the first portion, the second portion having sidewalls with a continuous profile and a top surface protruding further in the upward direction than the top surface of the field insulating layer and protruding in the upward direction less than the top surface of the first portion, a gate electrode on the first portion of the first multi-channel active pattern and extending along a second direction different from the first direction, and a first source/drain region on the second portion of the first multi-channel active pattern and contacting the field insulating layer.

Abstract: An input driver includes a power converting unit and a level adjusting unit. The power converting unit is configured to generate a first power and a second power having an anti-phase relationship based on input power, and process the first power and the second power as differential inputs to output a third power. The level adjusting unit is configured to adjust a voltage level of the third power and output the adjusted power as an input to a power amplifier.

Abstract: A wireless power transmitter includes a controller configured to output a control signal in response to detected light, and a power transmitting circuit which is configured to wirelessly radiate power in response to the control signal.

Abstract: Semiconductor devices and methods for fabricating the same are provided. The semiconductor devices include a fin active pattern formed to project from a substrate, a gate electrode formed to cross the fin active pattern on the substrate, a gate spacer formed on a side wall of the gate electrode and having a low dielectric constant and an elevated source/drain formed on both sides of the gate electrode on the fin active pattern. The gate spacer includes first, second and third spacers that sequentially come in contact with each other in a direction in which the gate spacer goes out from the gate electrode, and a carbon concentration of the second spacer is lower than carbon concentrations of the first and third spacers.

Abstract: A gas concentration apparatus and a method of operating the gas concentration apparatus are provided. The gas concentration apparatus includes a gas concentration module. The gas concentration module includes a base component having a chamber configured to accommodate carbon foam, a gas inlet connected to one side of the chamber, a gas outlet connected to the other side of the chamber, and a heating device disposed on at least one side of the substrate.

Abstract: A coil device may be capable of varying the gap of a coil so that several devices may be wirelessly charged simultaneously or a single device may be wirelessly charged with concentrated power. The coil device may include: a case having a reception space and varying a charging area upon a user's selection; and a coil part, having, in the reception space of the case, a coil body formed of a wound conductor having a predetermined length. A gap of the wound conductor of the coil body varies as the charging area of the case varies.

Abstract: Integrated circuit devices including Fin field effect transistors (finFETs) and methods of forming those devices are provided. The methods may include forming a fin on a substrate and forming a gate line on the fin. The method may also include forming a first recess in the fin having a first width and a first depth and forming a second recess in the first recess having a second width that is less than the first width and having a second depth that is greater than the first depth. The method may further include forming a source/drain region in the first and second recesses.

Abstract: A wireless power transmitter includes a case including a base plate and a structure disposed on the base plate; and a transmitting coil having a three-dimensional spiral shape disposed on a side surface of the structure and configured to generate a magnetic field in a direction perpendicular to the side surface of the structure.

Abstract: Provided are a superhydrophobic/superoleophobic structure and a method of manufacturing the superhydrophobic/superoleophobic structure. The superhydrophobic/superoleophobic structure includes: a roughened primary structure formed on a surface of a metal base; nanopores formed in the roughened primary structure; and a hydrophobic/oleophobic layer formed on a surface of the roughened primary structure. The superhydrophobic/superoleophobic structure makes a large contact angle and a small sliding angle with both aqueous solutions and oily solutions, thereby having a high degree of superhydrophobicity/superoleophobicity. In addition, the superhydrophobic/superoleophobic structure may be formed on large or curved structural objects by the manufacturing method without using a special device.

Abstract: A semiconductor device includes a first multi-channel active pattern defined by a field insulating layer and extending along a first direction, the first multi-channel active pattern including a first portion having a top surface protruding further in an upward direction than a top surface of the field insulating layer and a second portion on both sides of the first portion, the second portion having sidewalls with a continuous profile and a top surface protruding further in the upward direction than the top surface of the field insulating layer and protruding in the upward direction less than the top surface of the first portion, a gate electrode on the first portion of the first multi-channel active pattern and extending along a second direction different from the first direction, and a first source/drain region on the second portion of the first multi-channel active pattern and contacting the field insulating layer.

Abstract: Integrated circuit devices including Fin field effect transistors (finFETs) and methods of forming those devices are provided. The methods may include forming a fin on a substrate and forming a gate line on the fin. The method may also include forming a first recess in the fin having a first width and a first depth and forming a second recess in the first recess having a second width that is less than the first width and having a second depth that is greater than the first depth. The method may further include forming a source/drain region in the first and second recesses.

Abstract: An exercise apparatus with a generator. The exercise apparatus includes a frame, a rotating component, a generator, and a battery. The rotating component is rotatably connected to the frame and the rotating component rotates in response to operation of the exercise apparatus. The generator is connected to the rotating component and the frame. The generator includes a rotor connected to the rotating component and a stator. The rotor rotates in response to rotation of the rotating component. The stator is connected to the frame. The stator interacts with the rotor to produce electric current at an output. In one embodiment, the battery is connected to the output wherein the battery is charged by electric current from the generator.

Abstract: A coil device may be capable of varying the gap of a coil so that several devices may be wirelessly charged simultaneously or a single device may be wirelessly charged with concentrated power. The coil device may include: a case having a reception space and varying a charging area upon a user's selection; and a coil part, having, in the reception space of the case, a coil body formed of a wound conductor having a predetermined length. A gap of the wound conductor of the coil body varies as the charging area of the case varies.

Abstract: An electronic tag may include a wireless power receiving unit receiving power in a wireless power transmission scheme, a battery being charged with the power received from the wireless power receiving unit, a monitoring unit monitoring a power state of the battery, a display unit displaying information on the power state of the battery from the monitoring unit on a screen, and a first wireless communications unit wirelessly transmitting the information on the power state of the battery from the monitoring unit together with tag identification information in a first wireless communications scheme.

Abstract: Integrated circuit devices including Fin field effect transistors (finFETs) and methods of forming those devices are provided. The methods may include forming a fin on a substrate and forming a gate line on the fin. The method may also include forming a first recess in the fin having a first width and a first depth and forming a second recess in the first recess having a second width that is less than the first width and having a second depth that is greater than the first depth. The method may further include forming a source/drain region in the first and second recesses.