Abstract: A semiconductor device includes a substrate, a gate electrode on the substrate, a gate spacer on a sidewall of the gate electrode, an active pattern penetrating the gate electrode and the gate spacer, and an epitaxial pattern contacting the active pattern and the gate spacer. The gate electrode extends in a first direction. The gate spacer includes a semiconductor material layer. The active pattern extends in a second direction crossing the first direction.

Abstract: A semiconductor device including: a plurality of fin-shaped patterns spaced apart from each other in a first direction and extending in a second direction on a substrate; a field insulating layer covering sidewalls of the plurality of fin-shaped patterns and disposed between the fin-shaped patterns; a source/drain pattern connected to the plurality of fin-shaped patterns on the field insulating layer, the source/drain pattern including bottom surfaces respectively connected to the fin-shaped patterns, and at least one connection surface connecting the bottom surfaces to each other; and a sealing insulating pattern extending along the connection surface of the source/drain pattern and an upper surface of the field insulating layer, wherein the source/drain pattern includes a silicon-germanium pattern doped with a p-type impurity.

Abstract: A semiconductor device including first fin-shaped patterns in a first region of a substrate and spaced apart from each other in a first direction, second fin-shaped patterns in a second region of the substrate and spaced apart from each other in a second direction, a first field insulating film on the substrate and covering sidewalls of the first fin-shaped patterns, a second field insulating film on the substrate and covering sidewalls of the second fin-shaped patterns, a first source/drain pattern on the first field insulating film, connected to the first fin-shaped patterns, and including a first silicon-germanium pattern, and a second source/drain pattern on the second field insulating film, connected to the second fin-shaped patterns, and including a second silicon-germanium pattern, the second source/drain pattern and the second field insulating film defining one or more first air gaps therebetween may be provided.

Abstract: A semiconductor device includes a substrate including a first region and a second region, a first active pattern on the first region, a first gate structure having a first width in the first direction, on the first active pattern, a first epitaxial pattern disposed in the first active pattern on a side surface of the first gate structure, a second active pattern on the second region, a second gate structure having a second width greater than the first width in the first direction, on the second active pattern and a second epitaxial pattern disposed in the second active pattern on a side surface of the second gate structure. Each of the first epitaxial pattern and the second epitaxial pattern includes silicon germanium (SiGe), and a first Ge concentration of the first epitaxial pattern is lower than a second Ge concentration of the second epitaxial pattern.

Abstract: Animal bedding, such as for a guinea pig, is disclosed. The animal bedding comprises a main section and a pocket. The main section includes a top layer, a middle layer, and a bottom layer. The top layer is hydrophobic, the middle layer is hydrophilic and at least a part of the bottom layer is hydrophobic. The top layer, the middle layer and the bottom layer are attached to one another, such as via stitching along a perimeter of the main section. Separately, the top layer and the middle layer are attached to one another, such as in an interior of the main section, to form quilting in the main section. The pocket, which is attached to the main section, allows the guinea pig to burrow therein.

Abstract: The present invention relates to an antibody against delta-like 1 homolog (Drosophila) (DLK1) or an antigen-binding fragment thereof, a nucleic acid encoding the same, a vector comprising the nucleic acid, a cell transformed with the vector, a method for producing the antibody or an antigen-binding fragment thereof, an antibody drug conjugate (ADC) comprising the same, a pharmaceutical composition for treating cancer, a composition for diagnosing cancer, and a chimeric antigen receptor (CAR) and a T-cell engager comprising the same.

Abstract: Disclosed are an antibody to human programmed cell death 1 (PD-1) or an antigen-binding fragment thereof, a nucleic acid encoding the same, a vector including the nucleic acid, an isolated cell transformed with the vector, a method for producing the antibody or an antigen-binding fragment thereof, and a composition for preventing or treating cancer containing the same. The novel antibody binding to PD-1 or an antigen-binding fragment thereof can bind to PD-1 and inhibit the activity of PD-1, thus being useful for the development of immunotherapeutic agents for various diseases associated with PD-1.

Abstract: Animal bedding, such as for a guinea pig, is disclosed. The animal bedding comprises a main section and a pocket. The main section includes a top layer, a middle layer, and a bottom layer. The top layer is hydrophobic, the middle layer is hydrophilic and at least a part of the bottom layer is hydrophobic. The top layer, the middle layer and the bottom layer are attached to one another, such as via stitching along a perimeter of the main section. Separately, the top layer and the middle layer are attached to one another, such as in an interior of the main section, to form quilting in the main section. The pocket, which is attached to the main section, allows the guinea pig to burrow therein.

Abstract: The present invention relates to an antibody against delta-like 1 homolog (Drosophila) (DLK1) or an antigen-binding fragment thereof, a nucleic acid encoding the same, a vector comprising the nucleic acid, a cell transformed with the vector, a method for producing the antibody or an antigen-binding fragment thereof, an antibody drug conjugate (ADC) comprising the same, a pharmaceutical composition for treating cancer, a composition for diagnosing cancer, and a chimeric antigen receptor (CAR) and a T-cell engager comprising the same.

Abstract: A simulation method includes storing a plurality of structure parameters of transistors for a semiconductor chip, imaging generating a first local layout which includes a first structure parameter extracted from a semiconductor device included in the first local layout, the first structure parameter being an actual parameter determined using the imaging equipment, generating second to n-th local layouts by modifying the first structure parameter included in the first local layout, wherein the second to n-th local layouts respectively have second to n-th structure parameters modified from the first structure parameter, calculating first to n-th effective density factors (EDF) respectively for the first to n-th structure parameters, determining a first effective open silicon density for a first chip using the first to n-th effective density factors and a layout of the first chip, and calculating first to m-th epitaxy times for first to m-th effective open silicon densities.

Abstract: Animal bedding, such as for a guinea pig, is disclosed. The animal bedding comprises a main section and a pocket. The main section includes a top layer, a middle layer and a bottom layer. The top layer is hydrophobic, the middle layer is hydrophilic and at least a part of the bottom layer is hydrophobic. The top layer, the middle layer and the bottom layer are attached to one another, such as via stitching along a perimeter of the main section. Separately, the top layer and the middle layer are attached to one another, such as in an interior of the main section, to form quilting in the main section. The pocket, which is attached to the main section, allows the guinea pig to burrow therein.

Abstract: Disclosed are an antibody to human programmed cell death-ligand 1 (PD-L1) or an antigen-binding fragment thereof, a nucleic acid encoding the same, a vector including the nucleic acid, a cell transformed with the vector, a method for producing the antibody or an antigen-binding fragment thereof, and a composition for preventing or treating cancer or infectious diseases containing the same.

Abstract: A semiconductor device includes a substrate, a gate electrode on the substrate, a gate spacer on a sidewall of the gate electrode, an active pattern penetrating the gate electrode and the gate spacer, and an epitaxial pattern contacting the active pattern and the gate spacer. The gate electrode extends in a first direction. The gate spacer includes a semiconductor material layer. The active pattern extends in a second direction crossing the first direction.

Abstract: A simulation method and system which can determine a predictable epitaxy time by accurately reflecting layout characteristics of a chip and characteristics of a source/drain formation process are provided.

Abstract: Disclosed is a relay device including a stator having first and second stationary contact points spaced apart from each other; a movable element provided so as to be movable in a first direction toward the stator and in a second direction away from the stator, the movable element being electrically connected with the stator by making contact with the first and second stationary contact points; and an actuator for moving the movable element in the first or second direction, wherein the movable element includes: a first movable part having a first contact surface formed thereon, which can make contact with the first stationary contact point; and a second movable part having second and third contact surfaces formed thereon, which can make contact with the second stationary contact point, wherein the second and third contact surfaces make contact with the second stationary contact point at different positions.

Abstract: Animal bedding, such as for a guinea pig, is disclosed. The animal bedding comprises a main section and a pocket. The main section includes a top layer, a middle layer and a bottom layer. The top layer is hydrophobic, the middle layer is hydrophilic and at least a part of the bottom layer is hydrophobic. The top layer, the middle layer and the bottom layer are attached to one another, such as via stitching along a perimeter of the main section. Separately, the top layer and the middle layer are attached to one another, such as in an interior of the main section, to form quilting in the main section. The pocket, which is attached to the main section, allows the guinea pig to burrow therein.

Abstract: A semiconductor device includes a plurality of active fins on a substrate, a gate electrode intersecting the plurality of active fins, and a source/drain region on the plurality of active fins, extending on a first side and a second side of the gate electrode. The source/drain region includes lower epitaxial layers on ones of the plurality of active fins. The lower epitaxial layers include germanium (Ge) having a first concentration. An upper epitaxial layer is on the lower epitaxial layers, and includes germanium (Ge) having a second concentration that is higher than the first concentration. The lower epitaxial layers have convex upper surfaces, and are connected to each other between the active fins.