Abstract: A semiconductor device includes a substrate, a gate electrode on the substrate, a gate spacer on a sidewall of the gate electrode, an active pattern penetrating the gate electrode and the gate spacer, and an epitaxial pattern contacting the active pattern and the gate spacer. The gate electrode extends in a first direction. The gate spacer includes a semiconductor material layer. The active pattern extends in a second direction crossing the first direction.

Abstract: A simulation method and system which can determine a predictable epitaxy time by accurately reflecting layout characteristics of a chip and characteristics of a source/drain formation process are provided.

Abstract: Disclosed is a relay device including a stator having first and second stationary contact points spaced apart from each other; a movable element provided so as to be movable in a first direction toward the stator and in a second direction away from the stator, the movable element being electrically connected with the stator by making contact with the first and second stationary contact points; and an actuator for moving the movable element in the first or second direction, wherein the movable element includes: a first movable part having a first contact surface formed thereon, which can make contact with the first stationary contact point; and a second movable part having second and third contact surfaces formed thereon, which can make contact with the second stationary contact point, wherein the second and third contact surfaces make contact with the second stationary contact point at different positions.

Abstract: Animal bedding, such as for a guinea pig, is disclosed. The animal bedding comprises a main section and a pocket. The main section includes a top layer, a middle layer and a bottom layer. The top layer is hydrophobic, the middle layer is hydrophilic and at least a part of the bottom layer is hydrophobic. The top layer, the middle layer and the bottom layer are attached to one another, such as via stitching along a perimeter of the main section. Separately, the top layer and the middle layer are attached to one another, such as in an interior of the main section, to form quilting in the main section. The pocket, which is attached to the main section, allows the guinea pig to burrow therein.

Abstract: A semiconductor device includes a plurality of active fins on a substrate, a gate electrode intersecting the plurality of active fins, and a source/drain region on the plurality of active fins, extending on a first side and a second side of the gate electrode. The source/drain region includes lower epitaxial layers on ones of the plurality of active fins. The lower epitaxial layers include germanium (Ge) having a first concentration. An upper epitaxial layer is on the lower epitaxial layers, and includes germanium (Ge) having a second concentration that is higher than the first concentration. The lower epitaxial layers have convex upper surfaces, and are connected to each other between the active fins.

Abstract: A semiconductor device includes a plurality of active fins on a substrate, a gate electrode intersecting the plurality of active fins, and a source/drain region on the plurality of active fins, extending on a first side and a second side of the gate electrode. The source/drain region includes lower epitaxial layers on ones of the plurality of active fins. The lower epitaxial layers include germanium (Ge) having a first concentration. An upper epitaxial layer is on the lower epitaxial layers, and includes germanium (Ge) having a second concentration that is higher than the first concentration. The lower epitaxial layers have convex upper surfaces, and are connected to each other between the active fins.

Abstract: Disclosed are an antibody to human programmed cell death-ligand 1 (PD-L1) or an antigen-binding fragment thereof, a nucleic acid encoding the same, a vector including the nucleic acid, a cell transformed with the vector, a method for producing the antibody or an antigen-binding fragment thereof, and a composition for preventing or treating cancer or infectious diseases containing the same.

Abstract: Disclosed are an antibody to human programmed cell death 1 (PD-1) or an antigen-binding fragment thereof, a nucleic acid encoding the same, a vector including the nucleic acid, an isolated cell transformed with the vector, a method for producing the antibody or an antigen-binding fragment thereof, and a composition for preventing or treating cancer containing the same. The novel antibody binding to PD-1 or an antigen-binding fragment thereof can bind to PD-1 and inhibit the activity of PD-1, thus being useful for the development of immunotherapeutic agents for various diseases associated with PD-1.

Abstract: A semiconductor device includes a substrate, a gate electrode on the substrate, a gate spacer on a sidewall of the gate electrode, an active pattern penetrating the gate electrode and the gate spacer, and an epitaxial pattern contacting the active pattern and the gate spacer. The gate electrode extends in a first direction. The gate spacer includes a semiconductor material layer. The active pattern extends in a second direction crossing the first direction.

Abstract: A motor drive system for controlling operation of an electric machine is described. An inverter includes paired power transistors that are electrically connected to the electric machine, wherein the inverter is electrically connected to a DC power source via a high-voltage electrical power bus. A motor controller includes a first controller and an acoustic signal generator, wherein the first controller is disposed to control the paired power transistors of the inverter. The first controller determines an initial output voltage based upon a torque command and the acoustic signal generator is disposed to generate a sound injection voltage. The motor controller combines the initial output voltage and the sound injection voltage. The motor controller generates PWM commands to control the paired power transistors of the inverter, wherein the PWM commands are determined based upon the initial output voltage and the sound injection voltage.

Abstract: Disclosed is a relay device including a stator having first and second stationary contact points spaced apart from each other; a movable element provided so as to be movable in a first direction toward the stator and in a second direction away from the stator, the movable element being electrically connected with the stator by making contact with the first and second stationary contact points; and an actuator for moving the movable element in the first or second direction, wherein the movable element includes: a first movable part having a first contact surface formed thereon, which can make contact with the first stationary contact point; and a second movable part having second and third contact surfaces formed thereon, which can make contact with the second stationary contact point, wherein the second and third contact surfaces make contact with the second stationary contact point at different positions.

Abstract: A motor drive system for controlling operation of an electric machine is described. An inverter includes paired power transistors that are electrically connected to the electric machine, wherein the inverter is electrically connected to a DC power source via a high-voltage electrical power bus. A motor controller includes a first controller and an acoustic signal generator, wherein the first controller is disposed to control the paired power transistors of the inverter. The first controller determines an initial output voltage based upon a torque command and the acoustic signal generator is disposed to generate a sound injection voltage. The motor controller combines the initial output voltage and the sound injection voltage. The motor controller generates PWM commands to control the paired power transistors of the inverter, wherein the PWM commands are determined based upon the initial output voltage and the sound injection voltage.

Abstract: A semiconductor device and a method of fabricating the same are provided. The semiconductor device comprises a first multi-channel active pattern which is defined by a field insulating layer, extends along a first direction, and includes a first portion and a second portion; a gate electrode which extends along a second direction different from the first direction and is formed on the first portion; and a first source/drain region which is formed around the second portion protruding further upward than a top surface of the field insulating layer and contacts the field insulating layer, wherein the second portion is disposed on both sides of the first portion in the first direction and is more recessed than the first portion, a top surface of the first portion and a top surface of the second portion protrude further upward than the top surface of the field insulating layer, and a profile of sidewalls of the second portion is continuous.

Abstract: Provided are a network backup device and a network system. The network backup device includes a first connector configured to connect with one or more ports of a first network equipment, a second connector configured to connect with one or more second network equipment, a third connector configured to connect with a third network equipment, a switching module configured to aggregate data transmitted from the second connector, transfer the aggregated data to the third connector, and distribute data transmitted from the third connector to the second connector, and a switch configured to, in response to a fault occurring in a port of the first network equipment, switch from a connection between the second connector and the faulty port of the first network equipment to a connection between the second connector and the switching module.

Abstract: A semiconductor device and a method of fabricating the same are provided. The semiconductor device comprises a first multi-channel active pattern which is defined by a field insulating layer, extends along a first direction, and includes a first portion and a second portion; a gate electrode which extends along a second direction different from the first direction and is formed on the first portion; and a first source/drain region which is formed around the second portion protruding further upward than a top surface of the field insulating layer and contacts the field insulating layer, wherein the second portion is disposed on both sides of the first portion in the first direction and is more recessed than the first portion, a top surface of the first portion and a top surface of the second portion protrude further upward than the top surface of the field insulating layer, and a profile of sidewalls of the second portion is continuous.

Abstract: A semiconductor device includes a first multi-channel active pattern defined by a field insulating layer and extending along a first direction, the first multi-channel active pattern including a first portion having a top surface protruding further in an upward direction than a top surface of the field insulating layer and a second portion on both sides of the first portion, the second portion having sidewalls with a continuous profile and a top surface protruding further in the upward direction than the top surface of the field insulating layer and protruding in the upward direction less than the top surface of the first portion, a gate electrode on the first portion of the first multi-channel active pattern and extending along a second direction different from the first direction, and a first source/drain region on the second portion of the first multi-channel active pattern and contacting the field insulating layer.

Abstract: Semiconductor devices and methods for fabricating the same are provided. The semiconductor devices include a fin active pattern formed to project from a substrate, a gate electrode formed to cross the fin active pattern on the substrate, a gate spacer formed on a side wall of the gate electrode and having a low dielectric constant and an elevated source/drain formed on both sides of the gate electrode on the fin active pattern. The gate spacer includes first, second and third spacers that sequentially come in contact with each other in a direction in which the gate spacer goes out from the gate electrode, and a carbon concentration of the second spacer is lower than carbon concentrations of the first and third spacers.

Abstract: Integrated circuit devices including Fin field effect transistors (finFETs) and methods of forming those devices are provided. The methods may include forming a fin on a substrate and forming a gate line on the fin. The method may also include forming a first recess in the fin having a first width and a first depth and forming a second recess in the first recess having a second width that is less than the first width and having a second depth that is greater than the first depth. The method may further include forming a source/drain region in the first and second recesses.

Abstract: A semiconductor device includes a first multi-channel active pattern defined by a field insulating layer and extending along a first direction, the first multi-channel active pattern including a first portion having a top surface protruding further in an upward direction than a top surface of the field insulating layer and a second portion on both sides of the first portion, the second portion having sidewalls with a continuous profile and a top surface protruding further in the upward direction than the top surface of the field insulating layer and protruding in the upward direction less than the top surface of the first portion, a gate electrode on the first portion of the first multi-channel active pattern and extending along a second direction different from the first direction, and a first source/drain region on the second portion of the first multi-channel active pattern and contacting the field insulating layer.