Abstract: A semiconductor device includes a plurality of active fins on a substrate, a gate electrode intersecting the plurality of active fins, and a source/drain region on the plurality of active fins, extending on a first side and a second side of the gate electrode. The source/drain region includes lower epitaxial layers on ones of the plurality of active fins. The lower epitaxial layers include germanium (Ge) having a first concentration. An upper epitaxial layer is on the lower epitaxial layers, and includes germanium (Ge) having a second concentration that is higher than the first concentration. The lower epitaxial layers have convex upper surfaces, and are connected to each other between the active fins.

Abstract: Disclosed are an antibody to human programmed cell death-ligand 1 (PD-L1) or an antigen-binding fragment thereof, a nucleic acid encoding the same, a vector including the nucleic acid, a cell transformed with the vector, a method for producing the antibody or an antigen-binding fragment thereof, and a composition for preventing or treating cancer or infectious diseases containing the same.

Abstract: Disclosed are an antibody to human programmed cell death 1 (PD-1) or an antigen-binding fragment thereof, a nucleic acid encoding the same, a vector including the nucleic acid, an isolated cell transformed with the vector, a method for producing the antibody or an antigen-binding fragment thereof, and a composition for preventing or treating cancer containing the same. The novel antibody binding to PD-1 or an antigen-binding fragment thereof can bind to PD-1 and inhibit the activity of PD-1, thus being useful for the development of immunotherapeutic agents for various diseases associated with PD-1.

Abstract: A semiconductor device includes a substrate, a gate electrode on the substrate, a gate spacer on a sidewall of the gate electrode, an active pattern penetrating the gate electrode and the gate spacer, and an epitaxial pattern contacting the active pattern and the gate spacer. The gate electrode extends in a first direction. The gate spacer includes a semiconductor material layer. The active pattern extends in a second direction crossing the first direction.

Abstract: A motor drive system for controlling operation of an electric machine is described. An inverter includes paired power transistors that are electrically connected to the electric machine, wherein the inverter is electrically connected to a DC power source via a high-voltage electrical power bus. A motor controller includes a first controller and an acoustic signal generator, wherein the first controller is disposed to control the paired power transistors of the inverter. The first controller determines an initial output voltage based upon a torque command and the acoustic signal generator is disposed to generate a sound injection voltage. The motor controller combines the initial output voltage and the sound injection voltage. The motor controller generates PWM commands to control the paired power transistors of the inverter, wherein the PWM commands are determined based upon the initial output voltage and the sound injection voltage.

Abstract: Disclosed is a relay device including a stator having first and second stationary contact points spaced apart from each other; a movable element provided so as to be movable in a first direction toward the stator and in a second direction away from the stator, the movable element being electrically connected with the stator by making contact with the first and second stationary contact points; and an actuator for moving the movable element in the first or second direction, wherein the movable element includes: a first movable part having a first contact surface formed thereon, which can make contact with the first stationary contact point; and a second movable part having second and third contact surfaces formed thereon, which can make contact with the second stationary contact point, wherein the second and third contact surfaces make contact with the second stationary contact point at different positions.

Abstract: A motor drive system for controlling operation of an electric machine is described. An inverter includes paired power transistors that are electrically connected to the electric machine, wherein the inverter is electrically connected to a DC power source via a high-voltage electrical power bus. A motor controller includes a first controller and an acoustic signal generator, wherein the first controller is disposed to control the paired power transistors of the inverter. The first controller determines an initial output voltage based upon a torque command and the acoustic signal generator is disposed to generate a sound injection voltage. The motor controller combines the initial output voltage and the sound injection voltage. The motor controller generates PWM commands to control the paired power transistors of the inverter, wherein the PWM commands are determined based upon the initial output voltage and the sound injection voltage.

Abstract: A semiconductor device and a method of fabricating the same are provided. The semiconductor device comprises a first multi-channel active pattern which is defined by a field insulating layer, extends along a first direction, and includes a first portion and a second portion; a gate electrode which extends along a second direction different from the first direction and is formed on the first portion; and a first source/drain region which is formed around the second portion protruding further upward than a top surface of the field insulating layer and contacts the field insulating layer, wherein the second portion is disposed on both sides of the first portion in the first direction and is more recessed than the first portion, a top surface of the first portion and a top surface of the second portion protrude further upward than the top surface of the field insulating layer, and a profile of sidewalls of the second portion is continuous.

Abstract: Provided are a network backup device and a network system. The network backup device includes a first connector configured to connect with one or more ports of a first network equipment, a second connector configured to connect with one or more second network equipment, a third connector configured to connect with a third network equipment, a switching module configured to aggregate data transmitted from the second connector, transfer the aggregated data to the third connector, and distribute data transmitted from the third connector to the second connector, and a switch configured to, in response to a fault occurring in a port of the first network equipment, switch from a connection between the second connector and the faulty port of the first network equipment to a connection between the second connector and the switching module.

Abstract: A semiconductor device and a method of fabricating the same are provided. The semiconductor device comprises a first multi-channel active pattern which is defined by a field insulating layer, extends along a first direction, and includes a first portion and a second portion; a gate electrode which extends along a second direction different from the first direction and is formed on the first portion; and a first source/drain region which is formed around the second portion protruding further upward than a top surface of the field insulating layer and contacts the field insulating layer, wherein the second portion is disposed on both sides of the first portion in the first direction and is more recessed than the first portion, a top surface of the first portion and a top surface of the second portion protrude further upward than the top surface of the field insulating layer, and a profile of sidewalls of the second portion is continuous.

Abstract: A semiconductor device includes a first multi-channel active pattern defined by a field insulating layer and extending along a first direction, the first multi-channel active pattern including a first portion having a top surface protruding further in an upward direction than a top surface of the field insulating layer and a second portion on both sides of the first portion, the second portion having sidewalls with a continuous profile and a top surface protruding further in the upward direction than the top surface of the field insulating layer and protruding in the upward direction less than the top surface of the first portion, a gate electrode on the first portion of the first multi-channel active pattern and extending along a second direction different from the first direction, and a first source/drain region on the second portion of the first multi-channel active pattern and contacting the field insulating layer.

Abstract: Semiconductor devices and methods for fabricating the same are provided. The semiconductor devices include a fin active pattern formed to project from a substrate, a gate electrode formed to cross the fin active pattern on the substrate, a gate spacer formed on a side wall of the gate electrode and having a low dielectric constant and an elevated source/drain formed on both sides of the gate electrode on the fin active pattern. The gate spacer includes first, second and third spacers that sequentially come in contact with each other in a direction in which the gate spacer goes out from the gate electrode, and a carbon concentration of the second spacer is lower than carbon concentrations of the first and third spacers.

Abstract: Integrated circuit devices including Fin field effect transistors (finFETs) and methods of forming those devices are provided. The methods may include forming a fin on a substrate and forming a gate line on the fin. The method may also include forming a first recess in the fin having a first width and a first depth and forming a second recess in the first recess having a second width that is less than the first width and having a second depth that is greater than the first depth. The method may further include forming a source/drain region in the first and second recesses.

Abstract: A semiconductor device includes a first multi-channel active pattern defined by a field insulating layer and extending along a first direction, the first multi-channel active pattern including a first portion having a top surface protruding further in an upward direction than a top surface of the field insulating layer and a second portion on both sides of the first portion, the second portion having sidewalls with a continuous profile and a top surface protruding further in the upward direction than the top surface of the field insulating layer and protruding in the upward direction less than the top surface of the first portion, a gate electrode on the first portion of the first multi-channel active pattern and extending along a second direction different from the first direction, and a first source/drain region on the second portion of the first multi-channel active pattern and contacting the field insulating layer.

Abstract: Integrated circuit devices including Fin field effect transistors (finFETs) and methods of forming those devices are provided. The methods may include forming a fin on a substrate and forming a gate line on the fin. The method may also include forming a first recess in the fin having a first width and a first depth and forming a second recess in the first recess having a second width that is less than the first width and having a second depth that is greater than the first depth. The method may further include forming a source/drain region in the first and second recesses.

Abstract: An exercise apparatus with a generator. The exercise apparatus includes a frame, a rotating component, a generator, and a battery. The rotating component is rotatably connected to the frame and the rotating component rotates in response to operation of the exercise apparatus. The generator is connected to the rotating component and the frame. The generator includes a rotor connected to the rotating component and a stator. The rotor rotates in response to rotation of the rotating component. The stator is connected to the frame. The stator interacts with the rotor to produce electric current at an output. In one embodiment, the battery is connected to the output wherein the battery is charged by electric current from the generator.

Abstract: Integrated circuit devices including Fin field effect transistors (finFETs) and methods of forming those devices are provided. The methods may include forming a fin on a substrate and forming a gate line on the fin. The method may also include forming a first recess in the fin having a first width and a first depth and forming a second recess in the first recess having a second width that is less than the first width and having a second depth that is greater than the first depth. The method may further include forming a source/drain region in the first and second recesses.

Abstract: Integrated circuit devices including Fin field effect transistors (finFETs) and methods of forming those devices are provided. The methods may include forming a fin on a substrate and forming a gate line on the fin. The method may also include forming a first recess in the fin having a first width and a first depth and forming a second recess in the first recess having a second width that is less than the first width and having a second depth that is greater than the first depth. The method may further include forming a source/drain region in the first and second recesses.

Abstract: A method of forming a semiconductor device is provided, comprising forming a plurality of hard masks on a substrate by patterning an insulating layer; forming a plurality of trenches in the substrate, each trench having trench walls disposed between two adjacent masks and extending vertically from a bottom portion to an upper portion; forming an insulating layer on the hard masks and the trench walls; forming a conductive layer on the insulating layer; etching the conductive layer to form conductive layer patterns to fill the bottom portions of the trenches; depositing a buffer layer on the conductive layer patterns and the trench walls; and filling the upper portions of the trenches with a capping layer.

Abstract: Provided are a network backup device and a network system. The network backup device includes a first connector configured to connect with one or more ports of a first network equipment, a second connector configured to connect with one or more second network equipment, a third connector configured to connect with a third network equipment, a switching module configured to aggregate data transmitted from the second connector, transfer the aggregated data to the third connector, and distribute data transmitted from the third connector to the second connector, and a switch configured to, in response to a fault occurring in a port of the first network equipment, switch from a connection between the second connector and the faulty port of the first network equipment to a connection between the second connector and the switching module.