Abstract: A computing network comprising a first layer comprising a first set of oscillators and a second layer comprising a second set of oscillators is provided. The computing network further comprises a plurality of adjustable coupling elements between the oscillators of the first set and a plurality of nonlinear elements. The nonlinear elements are configured to couple output signals of the first layer to the second layer. The computing network further comprises an encoding unit configured to receive input signals, convert the input signals into phase-encoded output signals, and provide the phase-encoded output signals to the first layer.

Abstract: The present disclosure is notably directed to a computing network comprising a first layer comprising a first set of oscillators and a second layer comprising a second set of oscillators. The computing network further comprises a plurality of adjustable coupling elements between the oscillators of the first set and a plurality of nonlinear elements. The nonlinear elements are configured to couple output signals of the first layer to the second layer. The computing network further comprises an encoding unit configured to receive input signals, convert the input signals into phase-encoded output signals, and provide the phase-encoded output signals to the first layer.

Abstract: An optical spectrometer contains a photodiode and a straining mechanism for imposing adjustable strain on the photodiode. The spectrometer includes a measurement apparatus for measuring variation of photocurrent with strain at different values of the adjustable strain imposed by the straining mechanism. Adjusting the strain allows adjustment of the band gap Eg of the photosensitive region of the photodiode, and this determines the cut-off energy for absorption of photons. Measuring variation of photocurrent with strain at different values of the adjustable strain imposed by the straining mechanism allows study of photons within a desired energy range of the band gap energy corresponding to each strain value.

Abstract: A synapse for a neuromorphic network is provided. The synapse includes a time-delay portion having a first end and a second end, a first actuator located at the first end and in operational contact with the time-delay portion, and a second actuator located at the second end and in operational contact with the time-delay portion. The time-delay portion is formed from a phase change material wherein a change in the material of the time-delay portion alters a propagation time of a signal transmitted from the first actuator to the second actuator.

Abstract: A thermoelectric element includes a body formed of a single thermoelectric material and extending in a first direction along which a thermal gradient is established in thermoelectric operation, wherein the body has at least first and second adjacent sections in the first direction; at least one of the sections is subject to stress which is applied to that section substantially all around a central axis of the body in the first direction; and the arrangement is such that the stress results in different strain in the first and second sections producing an energy barrier in the body to enhance thermoelectric operation.

Abstract: A method of forming nanowire devices. The method includes forming a stressor layer circumferentially surrounding a semiconductor nanowire. The method is performed such that, due to the stressor layer, the nanowire is subjected to at least one of radial and longitudinal strain to enhance carrier mobility in the nanowire. Radial and longitudinal strain components can be used separately or together and can each be made tensile or compressive, allowing formulation of desired strain characteristics for enhanced conductivity in the nanowire of a given device.

Abstract: A method of forming nanowire devices. The method includes forming a stressor layer circumferentially surrounding a semiconductor nanowire. The method is performed such that, due to the stressor layer, the nanowire is subjected to at least one of radial and longitudinal strain to enhance carrier mobility in the nanowire. Radial and longitudinal strain components can be used separately or together and can each be made tensile or compressive, allowing formulation of desired strain characteristics for enhanced conductivity in the nanowire of a given device.

Abstract: An optical spectrometer contains a photodiode and a straining mechanism for imposing adjustable strain on the photodiode. The spectrometer includes a measurement apparatus for measuring variation of photocurrent with strain at different values of the adjustable strain imposed by the straining mechanism. Adjusting the strain allows adjustment of the band gap Eg of the photosensitive region of the photodiode, and this determines the cut-off energy for absorption of photons. Measuring variation of photocurrent with strain at different values of the adjustable strain imposed by the straining mechanism allows study of photons within a desired energy range of the band gap energy corresponding to each strain value.

Abstract: A method of forming nanowire devices. The method includes forming a stressor layer circumferentially surrounding a semiconductor nanowire. The method is performed such that, due to the stressor layer, the nanowire is subjected to at least one of radial and longitudinal strain to enhance carrier mobility in the nanowire. Radial and longitudinal strain components can be used separately or together and can each be made tensile or compressive, allowing formulation of desired strain characteristics for enhanced conductivity in the nanowire of a given device.

Abstract: A method of forming nanowire devices. The method includes forming a stressor layer circumferentially surrounding a semiconductor nanowire. The method is performed such that, due to the stressor layer, the nanowire is subjected to at least one of radial and longitudinal strain to enhance carrier mobility in the nanowire. Radial and longitudinal strain components can be used separately or together and can each be made tensile or compressive, allowing formulation of desired strain characteristics for enhanced conductivity in the nanowire of a given device.

Abstract: A method of forming nanowire devices. The method includes forming a stressor layer circumferentially surrounding a semiconductor nanowire. The method is performed such that, due to the stressor layer, the nanowire is subjected to at least one of radial and longitudinal strain to enhance carrier mobility in the nanowire. Radial and longitudinal strain components can be used separately or together and can each be made tensile or compressive, allowing formulation of desired strain characteristics for enhanced conductivity in the nanowire of a given device.

Abstract: A thermoelectric element includes a body formed of a single thermoelectric material and extending in a first direction along which a thermal gradient is established in thermoelectric operation, wherein the body has at least first and second adjacent sections in the first direction; at least one of the sections is subject to stress which is applied to that section substantially all around a central axis of the body in the first direction; and the arrangement is such that the stress results in different strain in the first and second sections producing an energy barrier in the body to enhance thermoelectric operation.

Abstract: The present invention relates to a semiconductor device (1) comprising: at least a nanowire (2) configured to comprise: at least a source region (3) comprising a corresponding source semiconductor material, at least a drain region (4) comprising a corresponding drain semiconductor material and at least a channel region (5) comprising a corresponding channel semiconductor material, the channel region (5) being arranged between the source region (3) and the drain region (4), at least a gate electrode (6) that is arranged relative to the nanowire (2) to circumferentially surround at least a part of the channel region (5), and at least a strain gate (7) that is arranged relative to the nanowire (2) to circumferentially surround at least a part of a segment of the nanowire (2), the strain gate (7) being configured to apply a strain to the nanowire segment (8), thereby to facilitate at least an alteration of the energy bands corresponding to the source region (3) relative to the energy bands corresponding to the ch

Abstract: A solar cell includes a substrate layer and a plurality of nanowires grown outwardly from the substrate layer, at least two of the nanowires including a plurality of sub-cells. The solar cell also includes one or more light guiding layers formed of a transparent, light scattering material and filling the area between the plurality of nanowires.

Abstract: A method of forming nanowire devices. The method includes forming a stressor layer circumferentially surrounding a semiconductor nanowire. The method is performed such that, due to the stressor layer, the nanowire is subjected to at least one of radial and longitudinal strain to enhance carrier mobility in the nanowire. Radial and longitudinal strain components can be used separately or together and can each be made tensile or compressive, allowing formulation of desired strain characteristics for enhanced conductivity in the nanowire of a given device.

Abstract: A multi-terminal programmable element. The programmable element includes a source electrode and a drain electrode on a base. The programmable element includes reference voltage contact that is not in contact with the source or drain electrode. The base includes a transition-metal oxide with oxygen vacancies for drifting under an applied electric field. Further, materials of the source electrode and the base are selected such that an interface of a source and/or drain electrode material and the transition metal oxide base material forms an energy barrier for electron injection from the electrode into the base material. The energy barrier has a height that depends on an oxygen vacancy concentration of the base material. Four non-volatile states are programmable into the programmable element.

Abstract: An electronic device having an electrode with enhanced injection properties comprising a first electrode and a first layer of cross-linked molecular charge transfer material on the first electrode. The cross-linked molecular charge transfer material may be an acceptor, which may consist of at least one of: TNF, TN9(CN)2F, TeNF, TCNB, DCNQ, and TCAQ. The cross-linked molecular charge transfer material may also be a donor, which may consist of at least one of: Terpy, Ru(terpy)2 TTN, and crystal violet.

Abstract: A solar cell includes a substrate layer and a plurality of nanowires grown outwardly from the substrate layer, at least two of the nanowires including a plurality of sub-cells. The solar cell also includes one or more light guiding layers formed of a transparent, light scattering material and filling the area between the plurality of nanowires.

Abstract: An indirectly induced tunnel emitter for a tunneling field effect transistor (TFET) structure includes an outer sheath that at least partially surrounds an elongated core element, the elongated core element formed from a first semiconductor material; an insulator layer disposed between the outer sheath and the core element; the outer sheath disposed at a location corresponding to a source region of the TFET structure; and a source contact that shorts the outer sheath to the core element; wherein the outer sheath is configured to introduce a carrier concentration in the source region of the core element sufficient for tunneling into a channel region of the TFET structure during an on state.

Abstract: An electronic device having an electrode with enhanced injection properties comprising a first electrode and a first layer of cross-linked molecular charge transfer material on the first electrode. The cross-linked molecular charge transfer material may be an acceptor, which may consist of at least one of: TNF, TN9(CN)2F, TeNF, TeCIBQ, TCNB, DCNQ, and TCAQ. The cross-linked molecular charge transfer material may also be a donor, which may consist of at least one of: Terpy, Ru(terpy)2 TTN, and crystal violet.