Abstract: A device for patterning structures on a substrate includes an imaging device having a scanning tip, a light emitting device, and a space around the scanning tip. The space comprises a vapour of a material which is suitable for Chemical Vapour Deposition onto the substrate when decomposed. The light emitting device is adapted to emit a light beam, which has an intensity not capable to decompose the vapour, onto the scanning tip in such a way that an electromagnetic field induced by the light beam near the scanning tip is high enough to decompose the vapour.

Abstract: A MOS device includes first and second source/drains spaced apart relative to one another. A channel is formed in the device between the first and second source/drains. A gate is formed in the device between the first and second source/drains and proximate the channel, the gate being electrically isolated from the first and second source/drains and the channel. The gate is configured to control a conduction of the channel as a function of a potential applied to the gate. The MOS device further includes an energy filter formed between the first source/drain and the channel. The energy filter includes an impurity band operative to control an injection of carriers from the first source/drain into the channel.

Abstract: A MOS device includes first and second source/drains spaced apart relative to one another. A channel is formed in the device between the first and second source/drains. A gate is formed in the device between the first and second source/drains and proximate the channel, the gate being electrically isolated from the first and second source/drains and the channel. The gate is configured to control a conduction of the channel as a function of a potential applied to the gate. The MOS device further includes an energy filter formed between the first source/drain and the channel. The energy filter includes a superlattice structure wherein a mini-band is formed. The energy filter is operative to control an injection of carriers from the first source/drain into the channel. The energy filter, in combination with the first source/drain, is configured to produce an effective zero-Kelvin first source/drain.

Abstract: A nonvolatile programmable resistance memory cell comprising a high-mobility ion conductor and a method for fabricating the same are provides. The memory cell comprises of a first and second electrode and a reversible and persistent programmable resistance structure connecting the first and second electrode. The resistance is modifiable by altering the ionic distribution of a high-mobility oxygen ion conductor region. As an alternate embodiment, the memory cell further includes a transition-metal oxide region.

Abstract: A multi-terminal programmable element. The programmable element includes a source electrode and a drain electrode on a base. The programmable element includes reference voltage contact that is not in contact with the source or drain electrode. The base includes a transition-metal oxide with oxygen vacancies for drifting under an applied electric field. Further, materials of the source electrode and the base are selected such that an interface of a source and/or drain electrode material and the transition metal oxide base material forms an energy barrier for electron injection from the electrode into the base material. The energy barrier has a height that depends on an oxygen vacancy concentration of the base material. Four non-volatile states are programmable into the programmable element.

Abstract: A field effect device includes a source electrode, a drain electrode spaced laterally apart from the source electrode, a channel formed between the source electrode and the drain electrode, and a gate electrode separated from the channel by an insulating layer. The channel includes a switching material that is reversibly switchable between a lower conductivity state and a higher conductivity state by at least one of: (i) application of a predetermined voltage between the source electrode and the drain electrode or between the gate electrode and at least one of the source electrode and the drain electrode, (ii) application of a voltage or a current to the switching material in the channel, and (iii) application of at least one of heat and light. Each of the conductivity states is persistent without the need for a sustaining excitation signal including an electrical field, heat and/or light applied to the device.

Abstract: A field effect device includes a source electrode, a drain electrode, a channel formed between the source electrode and the drain electrode, and a gate electrode formed directly on the channel and arranged in a gap between the source electrode and the drain electrode. The channel includes a switching material that is reversibly switchable between a lower conductivity state and a higher conductivity state. The first conductivity state has an electrical conductivity which is lower than an electrical conductivity of the second conductivity state. Each of the conductivity states is persistent without the need for a sustaining excitation signal including an electrical field, heat and/or light applied to the device.

Abstract: The present invention provides methods and apparatus for melt-based patterning for electronic devices. It employs and provides processes and apparatus for fabricating an electronic device having a pattern formed on a surface by a deposition material. Further, the invention a process for fabricating semiconductors, organic light-emitting devices (OLEDs), field-effect transistors, and in particular high-resolution patterning for RGB displays. A process for fabricating an organic electronic device includes the steps of heating and applying a pressure to the deposition material to form a melt, and depositing the melted deposition material on the surface with a phase-change printing technique or a spray technique. The melted deposition material solidifies on the surface.

Abstract: A memory cell (10) comprising at least a source electrode (MS) formed on a substrate (6); at least a drain electrode (MD) formed on the substrate (6); at least a coupling layer (1) formed between the source electrode (MS) and the drain electrode (MD), and at least a gate electrode (MG) formed on the substrate (6), wherein the coupling layer (1) comprises a transition-metal oxide exhibiting a filling-controlled metal-insulator transition property; the gate electrode (MG) comprises an oxygen ion conductor layer (2), and the gate electrode (MG) is arranged relative to the coupling layer (1) such that application of an electrical signal to the gate electrode (MG) causes alteration of the oxygen vacancy (3) concentration in the coupling layer (1).

Abstract: The present invention relates to a memory cell (10) comprising: a resistive structure (1), and at least two electrodes (2) coupled to the resistive structure (1), wherein: the resistive structure (1) comprises hydrogen, and the resistive structure (1) comprises a material that exhibits a hydrogen ion mobility value of at least 10?8 cm2/Vs.

Abstract: The present invention relates to a memory cell comprising: a resistive structure; at least two electrodes coupled to the resistive structure, and at least one hydrogen reservoir structure, wherein the application of an electrical signal to one of the at least two electrodes causes the electrical resistance of the resistive structure to be modified by altering a hydrogen-ion concentration in the resistive structure.

Abstract: A method for manufacturing an organic electronic device including a stack of layers including a release layer, the stack having a lateral structure on a substrate, at least one of the layers being an organic material layer. A method includes with the step of providing a stamp with at least one protrusion of the surface area corresponding to the lateral structure. The stack of layers is deposited with a first face on the surface area of the protrusion of the stamp. A second face of the stack that is opposite to the first face is brought into adhesive contact with the substrate. The stamp is released from the stack.

Abstract: A method for forming a structure of a desired cross-section on a substrate is provided. The method provides a seed structure comprising at least one support layer on the substrate. The support layer has a geometric shape related to the desired cross-section of the structure and is diffusive to a precursor constituent. The method further includes growing the structure by supplying at least one precursor constituent on the substrate. The desired cross-section of the structure is defined by the geometric shape of at least one support layer.

Abstract: The present invention provides a microelectronic device comprising a resistance structure including a plurality of programmable resistance layers and at least one intermediate layer such that an intermediate layer is placed between two programmable resistance layers. The programmable resistance layers can be individually doped or may consist of different materials. Each programmable resistance layer may be optimized for a specific application. The microelectronic device can be used as a programmable resistor or a memory cell as it exhibits switchable electrical resistance and does not require a time-consuming conditioning process.

Abstract: A nonvolatile programmable resistance memory cell comprising a high-mobility ion conductor and a method for fabricating the same are provides. The memory cell comprises of a first and second electrode and a reversible and persistent programmable resistance structure connecting the first and second electrode. The resistance is modifiable by altering the ionic distribution of a high-mobility oxygen ion conductor region. As an alternate embodiment, the memory cell further includes a transition-metal oxide region.

Abstract: A method for manufacturing an organic electronic device including a stack of layers with a lateral structure on a substrate, at least one of the layers being an organic material layer. A method includes with the step of providing a stamp with at least one protrusion of the surface area corresponding to the lateral structure. The stack of layers is deposited with a first face on the surface area of the protrusion of the stamp. A second face of the stack that is opposite to the first face is brought into adhesive contact with the substrate. The stamp is released from the stack.

Abstract: The present invention provides methods and apparatus for melt-based patterning for electronic devices. It employs and provides processes and apparatus for fabricating an electronic device having a pattern formed on a surface by a deposition material. Further, the invention a process for fabricating semiconductors, organic light-emitting devices (OLEDs), field-effect transistors, and in particular high-resolution patterning for RGB displays. A process for fabricating an organic electronic device includes the steps of heating and applying a pressure to the deposition material to form a melt, and depositing the melted deposition material on the surface with a phase-change printing technique or a spray technique. The melted deposition material solidifies on the surface.

Abstract: A field effect device (2) includes a source electrode (14), a drain electrode (16), a channel (24) formed between the source electrode (14) and the drain electrode (16), and a gate electrode (22) separated from the channel (24) by an insulating layer (20), wherein the channel (24) comprises a switching material reversibly switchable between a lower conductivity state and a higher conductivity state, each of the conductivity states being persistent.

Abstract: The present invention discloses an electrode structure for electronic and opto-electronic devices. Such a device comprises a first electrode substantially having a conductive layer (204), a nonmetal layer (206) formed on the conductive layer, a fluorocarbon layer (208) formed on the nonmetal layer, a structure (210) formed on the structure. The electrode may further comprise a buffer layer (205) between the conductive layer and the nonmetal layer.

Abstract: A method of making a light-emitting device comprises forming a first and second components. The first component has a first substrate, a first electrode on the first substrate, an organic layer on the first electrode, and a light-transmissive second electrode on the organic layer. The second component has a light-transmissive second substrate, and a light transmissive, electrically conductive layer on the second substrate. The first and second components are joined with the second electrode of the first component facing the conductive layer of the second component. An electrical contact is formed between the second electrode of the first component and the electrically conductive layer of the second component.