Abstract: A solar cell includes a substrate layer and a plurality of nanowires grown outwardly from the substrate layer, at least two of the nanowires including a plurality of sub-cells. The solar cell also includes one or more light guiding layers formed of a transparent, light scattering material and filling the area between the plurality of nanowires.

Abstract: The present invention is directed to an organic light emitting device (OLED) including a first electrode, a second electrode, at least one layer of organic material arranged between the first electrode and the second electrode, and a dielectric capping layer arranged on the second electrode opposite to the first electrode, wherein the capping layer comprises an outer surface, opposite to the second electrode, for emission of light generated in the at least one layer of organic material. The capping layer has the effect that a reflectance of external light is reduced whereas outcoupling of the light generated in the at least one layer of organic material through the capping layer is increased.

Abstract: A switchable element. The element includes a source electrode, a drain electrode, a conducting channel between the source electrode and the drain electrode, and a gate with multiferroic material being switchable, by application of an electrical signal to the gate, between a first switching state with a first spontaneous polarization direction and a second switching state with a second spontaneous polarization direction. The conducting channel is magnetoresistive, and a magnetic field strength at the conducting channel in the first switching state is different than a magnetic field strength in the second switching state, whereby a current-voltage characteristic of the conducting channel is dependent on the switching state of the multiferroic material.

Abstract: A MOS device includes first and second source/drains spaced apart relative to one another. A channel is formed in the device between the first and second source/drains. A gate is formed in the device between the first and second source/drains and proximate the channel, the gate being electrically isolated from the first and second source/drains and the channel. The gate is configured to control a conduction of the channel as a function of a potential applied to the gate. The MOS device further includes an energy filter formed between the first source/drain and the channel. The energy filter includes a superlattice structure wherein a mini-band is formed. The energy filter is operative to control an injection of carriers from the first source/drain into the channel. The energy filter, in combination with the first source/drain, is configured to produce an effective zero-Kelvin first source/drain.

Abstract: A device for patterning structures on a substrate includes an imaging device having a scanning tip, a light emitting device, and a space around the scanning tip. The space comprises a vapor of a material which is suitable for Chemical Vapor Deposition onto the substrate when decomposed. The light emitting device is adapted to emit a light beam, which has an intensity not capable to decompose the vapor, onto the scanning tip in such a way that an electromagnetic field induced by the light beam near the scanning tip is high enough to decompose the vapor.

Abstract: A method for manufacturing an organic electronic device including a stack of layers including a release layer, the stack having a lateral structure on a substrate, at least one of the layers being an organic material layer. A method includes with the step of providing a stamp with at least one protrusion of the surface area corresponding to the lateral structure. The stack of layers is deposited with a first face on the surface area of the protrusion of the stamp. A second face of the stack that is opposite to the first face is brought into adhesive contact with the substrate. The stamp is released from the stack.

Abstract: A MOS device includes first and second source/drains spaced apart relative to one another. A channel is formed in the device between the first and second source/drains. A gate is formed in the device between the first and second source/drains and proximate the channel, the gate being electrically isolated from the first and second source/drains and the channel. The gate is configured to control a conduction of the channel as a function of a potential applied to the gate. The MOS device further includes an energy filter formed between the first source/drain and the channel. The energy filter includes an impurity band operative to control an injection of carriers from the first source/drain into the channel.

Abstract: The present invention relates to methods and apparatus for producing an electronic device, such as an organic light-emitting diode (OLED), having an electrode with enhanced injection properties. An example method according to the invention comprises the steps of providing an electrode, depositing a first layer of molecular charge transfer material on the electrode, and cross-linking the molecular charge transfer material. With the method according to the invention, an OLED with higher light efficiency, lower operating voltage, and longer lifetime can be produced. The present invention further relates to an electronic device having an electrode with enhanced injection properties.

Abstract: An indirectly induced tunnel emitter for a tunneling field effect transistor (TFET) structure includes an outer sheath that at least partially surrounds an elongated core element, the elongated core element formed from a first semiconductor material; an insulator layer disposed between the outer sheath and the core element; the outer sheath disposed at a location corresponding to a source region of the TFET structure; and a source contact that shorts the outer sheath to the core element; wherein the outer sheath is configured to introduce a carrier concentration in the source region of the core element sufficient for tunneling into a channel region of the TFET structure during an on state.

Abstract: A memory cell (10) includes a resistive structure (1), and at least two electrodes (2) coupled to the resistive structure (1), wherein: the resistive structure (1) includes hydrogen, and the resistive structure (1) includes a material that exhibits a hydrogen ion mobility value of at least 10?8cm2/Vs.

Abstract: An electronic device having an electrode with enhanced injection properties comprising a first electrode and a first layer of cross-linked molecular charge transfer material on the first electrode. The cross-linked molecular charge transfer material may be an acceptor, which may consist of at least one of: TNF, TN9(CN)2F, TeNF, TeCIBQ, TCNB, DCNQ, and TCAQ. The cross-linked molecular charge transfer material may also be a donor, which may consist of at least one of: Terpy, Ru(terpy)2 TTN, and crystal violet.

Abstract: The present invention relates to a memory cell comprising: a resistive structure; at least two electrodes coupled to the resistive structure, and at least one hydrogen reservoir structure, wherein the application of an electrical signal to one of the at least two electrodes causes the electrical resistance of the resistive structure to be modified by altering a hydrogen-ion concentration in the resistive structure.

Abstract: A switchable element. The element includes a source electrode, a drain electrode, a conducting channel between the source electrode and the drain electrode, and a gate with multiferroic material being switchable, by application of an electrical signal to the gate, between a first switching state with a first spontaneous polarization direction and a second switching state with a second spontaneous polarization direction. The conducting channel is magnetoresistive, and a magnetic field strength at the conducting channel in the first switching state is different than a magnetic field strength in the second switching state, whereby a current-voltage characteristic of the conducting channel is dependent on the switching state of the multiferroic material.

Abstract: A MOS device includes first and second source/drains spaced apart relative to one another. A channel is formed in the device between the first and second source/drains. A gate is formed in the device between the first and second source/drains and proximate the channel, the gate being electrically isolated from the first and second source/drains and the channel. The gate is configured to control a conduction of the channel as a function of a potential applied to the gate. The MOS device further includes an energy filter formed between the first source/drain and the channel. The energy filter includes an impurity band operative to control an injection of carriers from the first source/drain into the channel.

Abstract: A solar cell includes a substrate layer and a plurality of nanowires grown outwardly from the substrate layer, at least two of the nanowires including a plurality of sub-cells. The solar cell also includes one or more light guiding layers formed of a transparent, light scattering material and filling the area between the plurality of nanowires.

Abstract: A memory cell (10) comprising at least a source electrode (MS) formed on a substrate (6); at least a drain electrode (MD) formed on the substrate (6); at least a coupling layer (1) formed between the source electrode (MS) and the drain electrode (MD), and at least a gate electrode (MG) formed on the substrate (6), wherein the coupling layer (1) comprises a transition-metal oxide exhibiting a filling-controlled metal-insulator transition property; the gate electrode (MG) comprises an oxygen ion conductor layer (2), and the gate electrode (MG) is arranged relative to the coupling layer (1) such that application of an electrical signal to the gate electrode (MG) causes alteration of the oxygen vacancy (3) concentration in the coupling layer (1).

Abstract: A method for forming a structure of a desired cross-section on a substrate is provided. The method provides a seed structure comprising at least one support layer on the substrate. The support layer has a geometric shape related to the desired cross-section of the structure and is diffusive to a precursor constituent. The method further includes growing the structure by supplying at least one precursor constituent on the substrate. The desired cross-section of the structure is defined by the geometric shape of at least one support layer.

Abstract: The present invention is directed to an organic light emitting device (OLED) including a first electrode, a second electrode, at least one layer of organic material arranged between the first electrode and the second electrode, and a dielectric capping layer arranged on the second electrode opposite to the first electrode, wherein the capping layer comprises an outer surface, opposite to the second electrode, for emission of light generated in the at least one layer of organic material. The capping layer has the effect that a reflectance of external light is reduced whereas outcoupling of the light generated in the at least one layer of organic material through the capping layer is increased.

Abstract: A method for manufacturing an optoelectronic device including a capping layer for improving out-coupling and optical fine-tuning of emission characteristics includes steps of: producing an optoelectronic member for generating photons of a predefined wavelength; producing a light emitting surface on the optoelectronic member; and producing a capping layer on the light emitting surface.

Abstract: A MOS device includes first and second source/drains spaced apart relative to one another. A channel is formed in the device between the first and second source/drains. A gate is formed in the device between the first and second source/drains and proximate the channel, the gate being electrically isolated from the first and second source/drains and the channel. The gate is configured to control a conduction of the channel as a function of a potential applied to the gate. The MOS device further includes an energy filter formed between the first source/drain and the channel. The energy filter includes an impurity band operative to control an injection of carriers from the first source/drain into the channel.