Abstract: An optoelectronic device includes a substrate carrier and a light source arranged thereon, which has a main radiation direction. A cap with an optical element is arranged above the light source and connected to the substrate carrier. This is arranged in the main radiation direction of the light source. Furthermore, a sensor device is provided, which is designed to emit a wireless signal between the cap and the substrate carrier for detecting damage to the cap. For this purpose, the cap is designed to interact with the emitted wireless signal.

Abstract: In an embodiment an optoelectronic component includes a radiation emitting semiconductor chip configured to emit primary electromagnetic radiation from a radiation emission surface, a conversion element configured to convert the primary electromagnetic radiation into electromagnetic secondary radiation, a first potting covering at least one side surface of the semiconductor chip, a second potting arranged on the first potting and an adhesion promoter with which the conversion element is fixed on the radiation emission surface of the semiconductor chip, wherein the adhesion promoter is arranged on a top surface of the first potting, wherein the first potting includes first filler particles, wherein the second potting includes second filler particles, and wherein a mass fraction of the first filler particles is greater than a mass fraction of the second filler particles per volume element.

Abstract: The Invention relates to a housing for an optoelectronic semiconductor component, comprising: a housing main body, which has a chip mounting side, at least two electrical conducting structures in and/or on the housing main body, and a plurality of drainage structures on the chip mounting side. The electrical conducting structures form, on the chip mounting side, electrical contact surfaces for at least one optoelectronic semiconductor chip and the drainage structure are designed as means for feeding a liquid potting material to the electrical contact surfaces.

Abstract: The invention relates to a housing for a radiation-emitting component, having the following features: —at least one electric contact point which is arranged on a first main surface of the housing and—at least one depression in the first main surface of the housing, said depression being arranged adjacently to the electric contact point. The invention additionally relates to a method for producing a radiation-emitting component and to a radiation-emitting component.

Abstract: In an embodiment a method for manufacturing at least one electronic component includes providing a second surface area of the component adjacent to a first surface area, wherein the second surface area is repulsive to a first fluid to be applied, applying the first fluid without additional pressurization to the first and/or second surface area, wherein the first surface area is wetted by the first fluid and the first fluid is repelled from the second surface area and applying a second fluid to the first surface area, to the second surface area and/or to a surface area of the solidified first fluid, after solidification of the first fluid applied to the first surface area, wherein applying the second fluid includes applying a positive pressure, a plasma action and/or a compression molding, and wherein the second fluid wets the second surface area.

Abstract: A method for producing optoelectronic semiconductor components is disclosed.

Abstract: In an embodiment an optoelectronic lighting device includes a carrier, exactly one light-emitting optoelectronic semiconductor component, wherein the semiconductor component has a light emission area on at least one surface side, and wherein the semiconductor component is arranged on an upper side of the carrier, at least one functional layer arranged above the light emission area and/or adjacent to the light emission area and an edging for the functional layer, wherein the edging surrounds the functional layer when viewed in a circumferential direction, the circumferential direction being parallel to the upper side of the carrier around the functional layer, and wherein the edging is formed of a transparent material.

Abstract: A method and device for slurrying a suspension, the device including a mixing container with an inlet opening configured to introduce the suspension into the mixing container, a distributor element having a collecting container and an outlet arm fastened to the collecting container, and a shaft with a longitudinal axis, with the shaft and the distributor element arranged inside the mixing container, and the distributor element rotatable around the shaft. The collecting container has a collecting opening that permits passage of the suspension from the inlet opening into the distributor element, the outlet arm has an outflow opening that lets the suspension leave the distributor element, and the outlet arm permitting the suspension to flow out of the distributor element, with a flow of the suspension causing a torque on the distributor element so that the torque supports a rotation around the shaft.

Abstract: An arrangement includes a carrier; an optoelectronic component arranged on the carrier; and a material arranged on the carrier, wherein the carrier includes at least one structural element that hinders flow of the material in a flow direction, the structural element extends transversely to the flow direction, and the structural element has a rounding radius in a plane perpendicular to the transverse extent of the structural element less than 20 ?m.

Abstract: A method for producing optoelectronic semiconductor components is disclosed.

Abstract: A device for slurrying a suspension and a method for operating such a device are disclosed.

Abstract: An arrangement includes a carrier; an optoelectronic component arranged on the carrier; and a material arranged on the carrier, wherein the carrier includes at least one structural element that hinders flow of the material in a flow direction, the structural element extends transversely to the flow direction, and the structural element has a rounding radius in a plane perpendicular to the transverse extent of the structural element less than 20 ?m.

Abstract: Disclosed is a radiation-emitting semi-conductor chip (1) comprising an epitaxial semi-conductor layer sequence (3) which emits electromagnetic radiation in operation. The epitaxial semi-conductor layer sequence (3) is applied on a a transparent substrate (4), wherein the substrate (4) has a first main surface (8) facing the semi-conductor layer sequence (3), a second main surface (9) facing away from the semi-conductor layer sequence (3) and a first lateral flank (10) arranged between the first main surface (8) and the second main surface (9), and the lateral flank (10) has a decoupling structure which is formed in a targeted manner from separating tracks. Also disclosed is a method for producing the semi-conductor chip, and a component comprising such a semi-conductor chip.

Abstract: An optoelectronic semiconductor device includes a carrier having a carrier top side, at least one optoelectronic semiconductor chip arranged at the carrier top side and having a radiation main side remote from the carrier top side, at least one bonding wire, at least one covering body on the radiation main side, and at least one reflective potting compound surrounding the semiconductor chip in a lateral direction and extending from the carrier top side at least as far as the radiation main side, wherein the bonding wire is completely covered by the reflective potting compound or completely covered by the reflective potting compound and the covering body, the bonding wire is fixed to the semiconductor chip in an electrical connection region on the radiation main side, and the electrical connection region is free of the covering body and covered partly or completely by the reflective potting compound.

Abstract: The invention relates to an optoelectronic semiconductor chip (10) comprising a carrier (2) and a semiconductor body (1) having an active layer (13) provided for generating electromagnetic radiation. Said carrier (2) has a first main surface (2A) facing the semiconductor body, a second main surface (2B) facing away from the semiconductor body, and a sidewall (2C) arranged between the first main surface and the second main surface. The carrier (2) has a structured region (21, 22, 23, 2C) for enlarging the total surface area of the sidewall, wherein the structured region has singulation traces. The invention also relates to an optoelectronic component (100) comprising such a semiconductor chip and a method for producing a plurality of such semiconductor chips are specified.

Abstract: Disclosed is a radiation-emitting semi-conductor chip (1) comprising an epitaxial semi-conductor layer sequence (3) which emits electromagnetic radiation in operation. The epitaxial semi-conductor layer sequence (3) is applied on a a transparent substrate (4), wherein the substrate (4) has a first main surface (8) facing the semi-conductor layer sequence (3), a second main surface (9) facing away from the semi-conductor layer sequence (3) and a first lateral flank (10) arranged between the first main surface (8) and the second main surface (9), and the lateral flank (10) has a decoupling structure which is formed in a targeted manner from separating tracks. Also disclosed is a method for producing the semi-conductor chip, and a component comprising such a semi-conductor chip.

Abstract: An electronic arrangement comprising: a carrier; at least one connecting area on the carrier; at least one electronic component, which is fixed at least on the connecting area by a contact material; a covering area, which surrounds the connecting area on the carrier; and at least one covered region covered by a covering material; wherein the covering area is highly reflective with a reflectivity of greater than 70%, exposed regions on the connecting area and on the contact material are covered with the covering material, and the covering material is colored by titanium dioxide particles in such a way that the titanium dioxide particles are provided in the covering material in a proportion between 25 percent and 70 percent by weight, such that the covering material is highly reflective with a reflectivity of greater than 70% to minimize optical contrast between the covering area and the covered region.

Abstract: A method for producing a plurality of optoelectronic semiconductor devices is provided. A number of semiconductor chips are fastened on an auxiliary support. The semiconductor chips are spaced apart from one another in a lateral direction. A reflective layer is formed, at least in regions between the semiconductor chips. A composite package body is formed at least in certain regions between the semiconductor chips. The auxiliary support is removed and the composite housing body is separated into a number of optoelectronic semiconductor devices. Each optoelectronic semiconductor device has at least one semiconductor chip, part of the reflective layer and part of the composite package body as a package body.

Abstract: An optoelectronic semiconductor device includes a carrier having a carrier top side, at least one optoelectronic semiconductor chip arranged at the carrier top side and having a radiation main side remote from the carrier top side, at least one bonding wire, at least one covering body on the radiation main side, and at least one reflective potting compound surrounding the semiconductor chip in a lateral direction and extending from the carrier top side at least as far as the radiation main side, wherein the bonding wire is completely covered by the reflective potting compound or completely covered by the reflective potting compound and the covering body, the bonding wire is fixed to the semiconductor chip in an electrical connection region on the radiation main side, and the electrical connection region is free of the covering body and covered partly or completely by the reflective potting compound.

Abstract: An optoelectronic semiconductor component includes a carrier and at least one optoelectronic semiconductor chip mounted on the carrier top. The semiconductor component includes at least one bonding wire, via which the semiconductor chip is electrically contacted, and at least one covering body mounted on a main radiation side and projects beyond the bonding wire. At least one reflective potting compound encloses the semiconductor chip laterally and extends at least as far as the main radiation side of the semiconductor chip. The bonding wire is covered completely by the reflective potting compound or completely by the reflective potting compound together with the covering body.