Abstract: An electronic arrangement comprising: a carrier; at least one connecting area on the carrier; at least one electronic component, which is fixed at least on the connecting area by a contact material; a covering area, which surrounds the connecting area on the carrier; and at least one covered region covered by a covering material; wherein the covering area is highly reflective with a reflectivity of greater than 70%, exposed regions on the connecting area and on the contact material are covered with the covering material, and the covering material is colored by titanium dioxide particles in such a way that the titanium dioxide particles are provided in the covering material in a proportion between 25 percent and 70 percent by weight, such that the covering material is highly reflective with a reflectivity of greater than 70% to minimize optical contrast between the covering area and the covered region.

Abstract: An electronic arrangement (1) comprising a carrier (2), on which at least one connecting area (6) is arranged. At least one electronic component (3a, 3b, 3c) is fixed on the connecting area (6) by means of a contact material (4). A covering area (5) surrounds the connecting area (6) on the carrier (2). At least one covered region (15, 16, 17, 18, 19) is covered by a covering material (10). The covering material (10) is designed in such a way that an optical contrast between the covering area (5) and the covered region (15, 16, 17, 18, 19) is minimized.

Abstract: A method of producing a semiconductor component includes providing an optoelectronic semiconductor chip; applying a molding compound for an optical element, wherein the molding compound is based on a highly refractive polymer material; precuring the molding compound at a temperature of at most 50° C.; and curing the molding compound.

Abstract: A method for producing a plurality of optoelectronic semiconductor devices is provided. A number of semiconductor chips are fastened on an auxiliary support. The semiconductor chips are spaced apart from one another in a lateral direction. A reflective layer is formed, at least in regions between the semiconductor chips. A composite package body is formed at least in certain regions between the semiconductor chips. The auxiliary support is removed and the composite housing body is separated into a number of optoelectronic semiconductor devices. Each optoelectronic semiconductor device has at least one semiconductor chip, part of the reflective layer and part of the composite package body as a package body.

Abstract: The invention relates to an optoelectronic semiconductor chip (10) comprising a carrier (2) and a semiconductor body (1) having an active layer (13) provided for generating electromagnetic radiation. Said carrier (2) has a first main surface (2A) facing the semiconductor body, a second main surface (2B) facing away from the semiconductor body, and a sidewall (2C) arranged between the first main surface and the second main surface. The carrier (2) has a structured region (21, 22, 23, 2C) for enlarging the total surface area of the sidewall, wherein the structured region has singulation traces. The invention also relates to an optoelectronic component (100) comprising such a semiconductor chip and a method for producing a plurality of such semiconductor chips are specified.

Abstract: A method of producing a semiconductor component includes providing an optoelectronic semiconductor chip; applying a molding compound for an optical element, wherein the molding compound is based on a highly refractive polymer material; precuring the molding compound at a temperature of at most 50° C.; and curing the molding compound.

Abstract: A method for producing an optoelectronic component is disclosed. In various embodiments, the method includes arranging a plurality of optoelectronic semiconductor chips on a carrier and commonly compressing separate molding compounds in areas of the optoelectronic semiconductor chips, wherein separate molded bodies are formed in the areas of the optoelectronic semiconductor chips.

Abstract: A method of producing a converter element for an optoelectronic component includes arranging a plurality of converter laminae on a carrier, forming a molded body, wherein the converter laminae are embedded into the molded body, and top sides and undersides of the converter laminae remain at least partly not covered by the molded body; and dividing the molded body to obtain a converter element.

Abstract: An optoelectronic component includes a substrate, on which a semiconductor chip and a wettable attractor element are arranged. A medium including pigments at least regionally covers the exposed region of the substrate that is not covered by the semiconductor chip and the attractor element. The medium at least partly wets the semiconductor chip and the attractor element.

Abstract: A semiconductor component includes an optoelectronic semiconductor chip and an optical element arranged on a radiation passage area of the semiconductor chip, wherein the optical element is based on a highly refractive polymer material.

Abstract: Optoelectronic semiconductor devices and methods for producing optoelectronic semiconductor devices are disclosed. In an embodiment the method includes applying a plurality of arrangements of electrically conductive first and second contact elements on an auxiliary carrier, applying an optoelectronic semiconductor chip on the second contact element of each arrangement and electrically conductively connecting the optoelectronic semiconductor chip to the first contact element for each arrangement. The method further includes encapsulating the first contact elements and the second contact elements with an encapsulation material to form an encapsulation body and singulating the encapsulation body into a plurality of optoelectronic semiconductor devices, wherein the encapsulation material finishes flush with an underside, facing the auxiliary carrier, of each first contact element, and wherein the encapsulation material finishes flush with an underside, facing the auxiliary carrier, of each second contact element.

Abstract: An optoelectronic component comprising an optoelectronic semiconductor chip (104) having a contact side (106) and a radiation coupling-out side (108) situated opposite; a chip carrier (102), on which the semiconductor chip (104) is applied via its contact side (106); a radiation conversion element (110) applied on the radiation coupling-out side (108); and a reflective potting compound (112), which is applied on the chip carrier (102) and laterally encloses the semiconductor chip (104) and the radiation conversion element (110); wherein the potting compound (112) adjoins an upper edge of the radiation conversion element (110) in a substantially flush fashion, such that a top side of the radiation conversion element (110) is free of the potting compound (112).

Abstract: An optoelectronic component includes a carrier; a semiconductor chip having an active layer that generates radiation and is arranged on a carrier; a dispersed material including a matrix material and particles embedded therein arranged on the semiconductor chip and/or the carrier at least in regions, and is integral therewith; and a separating edge between the dispersed material and matrix material formed at a chip edge of the semiconductor chip.

Abstract: An electrical component includes a closed lead frame with a passage opening at least one electrical component arranged within the passage opening, the electrical component including a first contact pad on one side of the electrical component and a second contact pad on a second side of the electric component, wherein the second side faces the first side and the second contact pad is electrically coupled to the lead frame; and an encapsulation which mechanically couples the electrical component to the lead frame, wherein the lead frame includes a recess on one side, the recess extending from an edge of the lead frame to the passage opening and connecting at least one electrical connecting element from the edge of the lead frame to the component arranged in the passage opening.

Abstract: Optoelectronic semiconductor devices and methods for producing optoelectronic semiconductor devices are disclosed. In an embodiment the method includes applying a plurality of arrangements of electrically conductive first and second contact elements on an auxiliary carrier, applying an optoelectronic semiconductor chip on the second contact element of each arrangement and electrically conductively connecting the optoelectronic semiconductor chip to the first contact element for each arrangement. The method further includes encapsulating the first contact elements and the second contact elements with an encapsulation material to form an encapsulation body and singulating the encapsulation body into a plurality of optoelectronic semiconductor devices, wherein the encapsulation material finishes flush with an underside, facing the auxiliary carrier, of each first contact element, and wherein the encapsulation material finishes flush with an underside, facing the auxiliary carrier, of each second contact element.

Abstract: An electrical component includes a closed lead frame with a passage opening at least one electrical component arranged within the passage opening, the electrical component including a first contact pad on one side of the electrical component and a second contact pad on a second side of the electric component, wherein the second side faces the first side and the second contact pad is electrically coupled to the lead frame; and an encapsulation which mechanically couples the electrical component to the lead frame, wherein the lead frame includes a recess on one side, the recess extending from an edge of the lead frame to the passage opening and connecting at least one electrical connecting element from the edge of the lead frame to the component arranged in the passage opening.

Abstract: An optoelectronic component includes a carrier; a semiconductor chip having an active layer that generates radiation and is arranged on a carrier; a dispersed material including a matrix material and particles embedded therein arranged on the semiconductor chip and/or the carrier at least in regions, and is integral therewith; and a separating edge between the dispersed material and matrix material formed at a chip edge of the semiconductor chip.

Abstract: A method of producing an optoelectronic component includes providing a semiconductor chip having an active layer that generates radiation and is arranged on a carrier, applying a dispersed material including a matrix material and particles embedded therein to the semiconductor chip and/or the carrier at least in regions, wherein before the dispersed material is applied, at least one chip edge of the semiconductor chip facing away from the carrier is modified such that the dispersed material at least partly separates into its constituents during application at the chip edge.

Abstract: An optoelectronic component includes a substrate, a semiconductor chip arranged on the substrate, and a light-transmissive cover, wherein the light-transmissive cover covers at least an area of the semiconductor chip facing away from the substrate, the light-transmissive cover has a hardness greater than that of silicone, and a connecting material is arranged as a potting material between the light-transmissive cover and the substrate such that those areas of the semiconductor chip not covered by the substrate are surrounded by the connecting material, and the connecting material forms a cavity seal.

Abstract: An optoelectronic component includes a substrate, on which a semiconductor chip and a wettable attractor element are arranged. A medium including pigments at least regionally covers the exposed region of the substrate that is not covered by the semiconductor chip and the attractor element. The medium at least partly wets the semiconductor chip and the attractor element.