Abstract: A die bonder and a die bonding method thereof are provided. The die bonder includes a wafer platform, an arranging platform, a conveyer, at least one first pick-up device and a second pick-up device. The wafer platform is for placing a wafer with several dies. The conveyer is for carrying and conveying a substrate. The first pick-up device is for picking up one of the dies and placing each die on the arranging platform. The second pick-up device is for picking up the dies on the arranging platform and placing the dies on the substrate at the same time.

Abstract: A packaging substrate and a method of manufacturing the same are provided. The method includes following steps. First, a first substrate including at least one defected packaging unit and several first packaging units is provided. The defected packaging unit and the first packaging units are arranged in an array on the first substrate. Next, the defected packaging unit is removed from the first substrate to correspondingly form at least one opening in the first substrate. Then, a second substrate including at least one second packaging unit is provided. Later, the second packaging unit is separated from the second substrate. The area of the second packaging unit is less than that of the opening. Subsequently, the second packaging unit is disposed in the opening. The edge of the second packaging unit is placed partially against an inner wall of the opening.

Abstract: A wire-bonding apparatus is used for wire-bonding at least a first chip and a second chip on a substrate at the same time. The wire-bonding apparatus includes at least a first capillary, a second capillary, a driving unit, a processing unit and a database. The driving unit is used for driving the first capillary and the second capillary. The processing unit is used for outputting a command to the driving unit to control the first capillary and the second capillary. The database is used for storing an operating parameter data. The processing unit controls the first capillary and the second capillary according to the operating parameter data.

Abstract: A new method is provided for the application of Chemical Vapor Deposition (CVD) processes. Where conventional CVD processes are performed while maintaining one, constant temperature during the CVD process, from the start of the CVD process up to the point where the CVD process is completed, the invention provides for first raising the temperature to a processing temperature and then gradually reducing the applied temperature within the cycle time that is required for the completion of the CVD process.