Abstract: An exemplary sensing circuit comprises a first transistor connected to a first node, where a target memory cell has a drain capable of being connected to the first node through a selection circuit during a read operation involving the target memory cell. The sensing circuit further comprises a decouple circuit which is connected to the first transistor. The decouple circuit includes a second transistor having a gate coupled to a gate of the first transistor. The decouple circuit further has a decouple coefficient (N) greater than 1. The drain of the second transistor is connected at a second node to a reference voltage through a bias resistor. With the arrangement, the drain of the second transistor generates a sense amp input voltage at the second node such that the sense amp input voltage is decoupled from the first node.

Abstract: A capacitor structure for characterizing polysilicon gate depletion effects of a particular semiconductor fabrication process. In one embodiment, an N-Gate/N-Substrate capacitor is fabricated with the semiconductor fabrication process which is being evaluated for its polysilicon gate depletion effects. The N-gate of capacitor structure is driven to depletion while the N-substrate is simultaneously driven to accumulation. Capacitance-voltage measurements are taken. Based on these CV measurements, the polysilicon depletion effects are then obtained for that particular semiconductor fabrication process. In another embodiment, a P-Gate/P-Substrate capacitor is fabricated with the semiconductor fabrication process. The gate of the P-Gate/P-Substrate capacitor is driven to depletion while the substrate is simultaneously driven to accumulation.

Abstract: A method and system for improving short channel effect on a floating gate device is disclosed. In one embodiment, a p-type implant is applied to a source side of the floating gate device. In addition, the present embodiment applies a p-type implant to a drain side of the floating gate device. The p-type implant to the drain side is performed at a different angle than the p-type implant to the source side. The p-type implant to the drain side is implanted to a greater depth than that of the p-type implant to the source side.

Abstract: A method of manufacturing a metal oxide semiconductor. A gate structure of the metal oxide semiconductor is etched. A nitrogen-comprising gas, which may be NO or N2O, is made to flow over the metal oxide semiconductor. A pre-implant film is grown over the edges of the gate structure. The pre-implant film may repair damage to a gate stack edge caused by an etching process. The film may be substantially silicon nitride. Beneficially, such a film may be thinner than a conventional silica oxide film. A thinner film does not deleteriously contribute to non-uniformities in a tunnel oxide. A non-uniform tunnel oxide may result in a non-uniform field between a gate and a channel. Non-uniform fields may have numerous deleterious effects. Advantageously, embodiments of the present invention overcome prior art deficiencies in repairing gate stack edge defects.

Abstract: Methods of forming flash memory EEPROM devices having lightly doped source region near the critical gate region and a heavily doped source region away from the critical gate region. In a first embodiment a first source mask is formed exposing source regions and portions of the gates and implanting n dopant ions, replacing the first source mask with a second source mask that exposes a portion of the source regions and implanting n+ dopant ions. In a second embodiment a source mask is formed exposing a portion of the source regions and implanting n+ dopant ions.

Abstract: The present invention is a method for fabricating a memory device. In one embodiment, a first impurity concentration is deposited in a channel region of a memory device. A second impurity concentration, which overlies the first impurity concentration, is then created in the channel region. Finally, a memory array is fabricated upon the channel region. The memory array overlies the first impurity concentration and the second impurity concentration.

Abstract: According to one exemplary embodiment, a memory array comprises first and second isolation regions situated in a substrate, where the first and second isolation regions are separated by a separation distance. The memory array further comprises a trench situated between the first and second isolation regions, where the trench defines trench sidewalls and a trench bottom in the substrate. The memory array further comprises a tunnel oxide layer situated between the first and second isolation regions, where the tunnel oxide layer is situated on the trench sidewalls and the trench bottom. According to this embodiment, the memory array further comprises a channel region situated underneath the tunnel oxide layer and extending along the trench sidewalls and the trench bottom, where the channel region has an effective channel width, where the effective channel width increases as a height of the trench sidewalls increases.

Abstract: A friction transmission mechanism for a motor-driven blind is constructed to include a driving unit, and at least one cord roll-up unit controlled to the driving unit to lift/lower or tilt the slats of the motor-driven Venetian blind. Each cord roll-up unit includes an amplitude modulation wheel controlled by the driving unit to lift/lower the slats and bottom rail of the Venetian blind, a frequency modulation wheel for rotation with the amplitude modulation set to tilt the slats of the Venetian blind, spring means, which forces the frequency modulation wheel into friction-engagement with the amplitude modulation wheel, and a support supporting the amplitude modulation wheel, the support having a shoulder adapted to act with a protruding block of the frequency modulation wheel and to further limit angle of rotation of the frequency modulation wheel.

Abstract: An electromagnetic clutch-controlled electric blind is constructed to include a blind body formed of a headrail defining a receiving chamber, a set of slats, and a bottom rail, a power drive, the power drive including a reversible motor and electromagnetic clutch apparatus connectable to the motor, an amplitude modulation set coupled to the motor for rotation with the motor to lift/lower the slats to the desired elevation, a frequency modulation set coupled to the motor through the electromagnetic clutch apparatus and adapted for controlling tilting angle of the slats.

Abstract: A window blind includes a transmission mechanism for lifting and lowering and/or tilting the slats of a Venetian blind. The mechanism includes a manually operated or motorized driving unit, and at least one cord roll-up unit. In the manually operated configuration, a single independent operating device is connectable to one or more driving force inputs of the mechanism. Also disclosed is a method for controlling a blind.

Abstract: According to one exemplary embodiment, a method for fabricating a floating gate memory array comprises a step of removing a dielectric material from an isolation region situated in a substrate to expose a trench, where the trench is situated between a first source region and a second source region, where the trench defines sidewalls in the substrate. The method further comprises implanting an N type dopant in the first source region, the second source region, and the sidewalls of the trench, where the N type dopant forms an N+ type region. The method further comprises implanting a P type dopant in the first source region, the second source region, and the sidewalls of the trench, where the P type dopant forms a P type region, and where the P type region is situated underneath the N+ type region.

Abstract: A method of manufacturing a metal oxide semiconductor. A gate structure of the metal oxide semiconductor is etched. A nitrogen-comprising gas, which may be NO or N2O, is made to flow over the metal oxide semiconductor. A pre-implant film is grown over the edges of the gate structure. The pre-implant film may repair damage to a gate stack edge caused by an etching process. The film may be substantially silicon nitride. Beneficially, such a film may be thinner than a conventional silica oxide film. A thinner film does not deleteriously contribute to non-uniformities in a tunnel oxide. A non-unifonn tunnel oxide may result in a non-uniform field between a gate and a channel. Non-uniform fields may have numerous deleterious effects. Advantageously, embodiments of the present invention overcome prior art deficiencies in repairing gate stack edge defects.

Abstract: In a method of fabricating a semiconductor device, a gate oxide layer is provided on a silicon substrate. A first polysilicon layer is provided on the gate oxide layer, a dielectric layer is provided on the first polysilicon layer, and a second polysilicon layer is provided on the dielectric layer. Upon appropriate masking, an etch step is undertaken, etching the second polysilicon layer, dielectric layer, first polysilicon layer, and gate oxide layer to remove portions thereof to expose the silicon substrate and to form a stacked gate structure on the silicon substrate. A rapid thermal anneal is undertaken for a short period of time, i.e., for example 10-20 seconds, to grow a thin oxide layer on the stacked gate structure. Then, another oxide layer is deposited over the oxide layer which was formed by rapid thermal anneal.

Abstract: One aspect of the invention relates to a virtual ground array floating gate flash memory device with salicided buried bit lines. The bit lines are implanted and salicided after formation of memory cell stacks, but before formation of word lines. The salicide can form over control gates for the memory cells and can contact a third poly layer from which the word lines are patterned. According to another aspect of the invention, an interpoly dielectric coats the sides of the floating gates and significantly improves the capacitance between the floating gate and the memory cell channel. The present invention provides very compact and reliable non-volatile memory.

Abstract: In a memory array, a plurality of sectors are included. Each sector includes a plurality of parallel bit lines which lie in a plane. Sector connecting lines connect the sectors. These sector connecting lines are parallel to each other and to the bit lines. The sector connecting lines include a first set of sector connecting lines which lie in a plane parallel to and adjacent and spaced from the plane of the bit lines, and a second set of sector connecting lines which lie in a plane parallel to and adjacent and spaced from the plane of the first set of sector connecting lines. When viewed across the sector, consecutive sector connecting lines lie in the two different planes thereof in alternating manner, i.e., the sector connecting lines are in a staggered relation.

Abstract: A screw transmission mechanism for a motor-driven blind is constructed to include a driving unit, and at least one cord roll-up unit controlled by the driving unit to lift/lower or tilt the slats of the motor-driven Venetian blind. Each cord roll-up unit includes an amplitude modulation set controlled by the driving unit to lift/lower the slats and bottom rail of the Venetian blind, a frequency modulation set for rotation with the amplitude modulation set to tilt the slats of the Venetian blind, and a linkage adapted to control connection between the frequency modulation set and the amplitude modulation set.

Abstract: A friction transmission mechanism for a motor-driven blind is constructed to include a driving unit, and at least one cord roll-up unit controlled to the driving unit to lift/lower or tilt the slats of the motor-driven Venetian blind. Each cord roll-up unit includes an amplitude modulation wheel controlled by the driving unit to lift/lower the slats and bottom rail of the Venetian blind, a frequency modulation wheel for rotation with the amplitude modulation set to tilt the slats of the Venetian blind, spring elements, which forces the frequency modulation wheel into friction-engagement with the amplitude modulation wheel, and a support supporting the amplitude modulation wheel, the support having a shoulder adapted to act with a protruding block of the frequency modulation wheel and to further limit angle of rotation of the frequency modulation wheel.

Abstract: One aspect of the present invention relates to a method of making a flash memory cell, involving the steps of providing a substrate having a flash memory cell thereon; forming a self-aligned source mask over the substrate, the self aligned source mask having openings corresponding to source lines; implanting a source dopant of a first type in the substrate through the openings in the self-aligned source mask corresponding to source lines; removing the self-aligned source mask from the substrate; forming a MDD mask over the substrate, the MDD mask covering the source lines and having openings corresponding to drain lines; and implanting a medium dosage drain implant of a second type to form a drain region in the substrate adjacent the flash memory cell.

Abstract: A method and system for eliminating post etch residues is disclosed. In one method embodiment, the present invention recites disposing a surface, having post etch residues adhered thereto, proximate to an electron beam source which generates electrons. The present method embodiment then recites bombarding the post etch residues with the electrons such that the post etch residues are removed from the surface to which the post etch residues were adhered.

Abstract: A plug-in transmission mechanism for a motor-driven blind is constructed to include a driving unit, two cord roll-up units controlled by the driving unit to lift/lower or tilt the slats of the motor-driven Venetian blind. Each cord roll-up unit includes an amplitude modulation wheel rotated by the driving unit to lift/lower the slats and bottom rail of the Venetian blind, a frequency modulation wheel for rotation with the amplitude modulation wheel to tilt the slats of the Venetian blind, a stop block adapted to limit the angle of rotation of the frequency modulation wheel, and a link supported on a spring in a longitudinal groove of the amplitude modulation wheel and detachably engaged into a notch of the frequency modulation wheel to control linkage between the amplitude modulation wheel and the frequency modulation wheel.