Abstract: A method for manufacturing an IGZO thin-film transistor includes: manufacturing a buffer layer, an active layer, a gate electrode layer, and a gate insulator layer in sequence on a substrate, and performing a patterning process; depositing a transparent insulating metal oxide layer on the patterned buffer layer, the active layer, the gate electrode layer, and the gate insulator layer by sputtering, and annealing the transparent insulating metal oxide layer so as to improve electric properties of a thin-film transistor; depositing a dielectric layer on the transparent insulating metal oxide layer, and patterning the dielectric layer and the transparent insulating metal oxide layer by means of a photolithography process and a dry etch process; depositing S/D (source/drain) contact regions on the dielectric layer; and performing a patterning process.

Abstract: Related to is the field of light-emitting panel manufacture, and a light-emitting panel and a method for manufacturing the same are provided, which aim to improve uniformity of light emission of an Organic Light-Emitting Diode (OLED) manufactured by Inkjet Printing (IJP). The light-emitting panel sequentially comprises an ITO substrate, a light-emitting layer, a light-shielding layer, and a cover glass. The method comprises forming a multilayer structure sequentially including an ITO substrate, a light-emitting layer, a light-shielding layer, and a cover glass. According to a size of an edge warp of a light-emitting area of the OLED, a light-shielding layer is designed at a corresponding position of the light-emitting area on the cover glass, and a position of a non-uniform edge is subjected to light-shielding processing, so that the problem of non-uniform light emission caused by the edge warp of the organic light-emitting layer is solved.

Abstract: An organic light emitting diode (OLED) display panel and manufacturing method thereof are provided. The display panel includes a substrate, a thin film transistor layer, and a light emitting structure, wherein the thin film transistor layer includes a polysilicon layer, a gate dielectric layer positioned on the polysilicon layer, a gate metal layer positioned on the gate dielectric layer, a gate buffer layer positioned on the gate dielectric layer, and an interlayer dielectric layer covering the gate dielectric layer, the gate metal layer, and the gate buffer layer.

Abstract: An array substrate is provided, including a substrate, a driver thin film transistor and a switch thin film transistor disposed on the substrate, the driver thin film transistor and the switch thin film transistor both include a gate, a gate insulating layer, an active layer, a source, and a drain. A barrier layer is disposed between the gate and the gate insulating layer of the driver thin film transistor. A manufacturing method thereof includes forming a barrier layer on the gate of the driver thin film transistor. Compared with existing arts, forming a barrier layer between the gate and the gate insulating layer of the driver thin film transistor to prevent its active layer from water and active oxygen ions affections can improve the electrical property and reliability of the thin film transistor, and ensure the normal operation for driving the driver thin film transistor of organic light emitting diode.

Abstract: An organic light emitting diode (OLED) display and a method of manufacturing thereof are provided. The OLED display panel includes a substrate; a thin film transistor (TFT) layer on the substrate; a pixel defining layer above the TFT layer, the pixel defining layer having a via hole; a light emitting unit located in the via hole of the pixel defining layer, the light emitting unit includes an anode located at a bottom of the via hole, an organic light emitting material above the anode, a cathode located above the organic light emitting material, and a first reflective metal layer between the organic light emitting material and the pixel defining layer.

Abstract: The disclosure provides an N-type thin film transistor, including a poly-silicon layer, a gate layer, a source and a drain. The poly-silicon layer includes a channel region, a source region and a drain region at two side of the channel region. The gate layer is on the channel region, a projection of the gate layer on the poly-silicon layer partially overlaps the source region and the drain region, and a thickness of the gate layer on the source region and the drain region are smaller than a thickness of the gate layer on the channel region. The source region and the drain region both include a heavily-doping region and a lightly-doping region connected to the heavily-doping region, the source and the drain are respectively on the heavily-doping region of the source region and the drain, and respectively electrically connects to the heavily-doping region of the source region and the drain.

Abstract: A flexible AMOLED substrate and a manufacturing method thereof are provided. The method includes: forming a flexible backing, which includes a display section and a bending section disposed on an outer circumference of the display section; forming a buffer layer on the flexible backing, removing a portion of the buffer layer that is disposed on the bending section and preserving a portion of the buffer layer that is disposed on the display section so that an inorganic insulation layer on the bending section has a reduced thickness to improve bending resistance of the bending section of the flexible AMOLED substrate and thus improving production yield. The flexible AMOLED substrate is manufactured with the above method, in which an inorganic insulation layer included in a bending section has a reduced thickness so that the bending section of the flexible AMOLED substrate shows better resistance against bending and provides high production yield.

Abstract: The present invention discloses an organic electroluminescent display panel, including a substrate; a thin film transistor formed on the substrate; a bottom electrode formed on a drain of the thin film transistor; a light-blocking layer formed on the bottom electrode, the light-blocking layer has a first through hole that exposes the bottom electrode; a pixel define layer formed on the thin film transistor, the bottom electrode, and the light-blocking layer, the pixel define layer has a second through hole, the second through hole completely exposes the first through hole; an organic electroluminescent device formed on the bottom electrode, an edge of the organic electroluminescent device is formed on the light-blocking layer; and a top electrode formed on the organic electroluminescent device. The present invention uses the light-blocking layer to block the edge of the organic electroluminescent device, thereby eliminating the non-uniform brightness of the edge of the organic electroluminescent device.

Abstract: An AMOLED panel is disclosed. The panel includes, from bottom up in sequence, a substrate, a first electrode layer, an opaque insulation layer, and pixel defined layers among which pixel regions are arranged. The opaque insulation layer extends to the pixel region in which an organic light emitting layer is arranged. The organic light emitting layer has a film thickness non-uniform region at a position near to an inclined surface of a pixel defined layer facing the pixel region. When observed along a normal line direction of the substrate, a projection of the film thickness non-uniform region on the opaque insulation layer is inside the opaque insulation layer. In the panel, the non-uniform light resulted by the film thickness non-uniform region can be completely shaded by the opaque insulation layer. In this manner, only light with a uniform brightness that is emitted by a film thickness uniform region can transmit through the substrate, and thus the pixel region can have a uniform brightness.

Abstract: A solid phase crystallization method of the present invention includes: providing amorphous silicon; heating the amorphous silicon to a first crystallization temperature; continuously heating the amorphous silicon to cause a temperature rise, in a first time period, from the first crystallization temperature to a second crystallization temperature, keeping the amorphous silicon in the second crystallization temperature for a predetermined time interval, causing a temperature drop of the amorphous silicon so as to gradually drop, in a second time period, from the second crystallization temperature to the first crystallization temperature, allowing continuous temperature drop of the amorphous silicon to reach the room temperature to thereby obtain low-temperature poly-silicon.

Abstract: A LTPS TFT (Lower Temperature Polycrystal Silicon thin film transistor) is provided. The LTPS TFT includes substrate, poly-Si layer, gate insulation layer, grid, layer insulation layer, first through hole, second through hole, source and drain. The poly-Si layer includes an undoped layer, a heavily doped layers and a lightly doped layer. The gate insulation layer includes a first layer, a second layer and third layer respectively corresponding to undoped layer, lightly doped layer and third layer. The thickness of second layer is greater than sum of a thickness of first layer and third layer. A manufacture method of LTPS TFT and OLED display device are also provided in invention. The LTPS TFT of this invention has simplify manufacture method and low cost.

Abstract: A LTPS TFT (Lower Temperature Polycrystal Silicon thin film transistor) is provided. The LTPS TFT includes substrate, poly-Si layer, gate insulation layer, grid, layer insulation layer, first through hole, second through hole, source and drain. The poly-Si layer includes an undoped layer, a heavily doped layers and a lightly doped layer. The gate insulation layer includes a first layer, a second layer and third layer respectively corresponding to undoped layer, lightly doped layer and third layer. The thickness of second layer is greater than sum of a thickness of first layer and third layer. A manufacture method of LTPS TFT and OLED display device are also provided in invention. The LTPS TFT of this invention has simplify manufacture method and low cost.

Abstract: The present disclosure relates to a thin film transistor (TFT) substrate, a manufacturing method thereof, and an organic light-emitting (OLED) substrate. The interlayer dielectric layer manufactured by the manufacturing method may be configured in the structure of two silicon oxide layers sandwiching one silicon nitride layer. As such, the bonding force between the interlayer dielectric layer and the gate, and the bonding force between the interlayer dielectric layer, and the source and the drain may be improved. The source and the drain may be prevented from falling off from the interlayer dielectric layer during the annealing process. Production yield of the TFT substrate may be improved. The OLED substrate adopting the manufactured of the OLED substrate of the present disclosure may have a better production yield and quality.

Abstract: The present application provides a lower temperature polycrystal silicon thin film transistor, including: a substrate; a gate electrode; a gate insulating layer; a polycrystal silicon active layer including a polycrystal silicon bulk layer and a source electrode contact layer and a drain electrode contact layer located at both ends of the polycrystal silicon bulk layer, respectively; an etching stop layer including a first through hole and a second through hole, the first through hole exposing the source electrode contact layer, the second through hole exposing the drain electrode contact layer; a source and a drain electrode disposed on the etching stop layer, the source electrode filling the first through hole to contact with the source electrode contact layer, the drain electrode filling the second through hole to contact with the drain electrode contact layer; and a passivation layer disposed on the source, the drain electrode, and the etching stop layer.

Abstract: Disclosed is a method for manufacturing an IGZO thin-film transistor. The method includes: manufacturing a buffer layer, an active layer, a gate electrode layer, and a gate insulator layer in sequence on a substrate, and performing a patterning process; depositing a transparent insulating metal oxide layer on the patterned buffer layer, the active layer, the gate electrode layer, and the gate insulator layer by sputtering, and annealing the transparent insulating metal oxide layer so as to improve electric properties of a thin-film transistor; and depositing a dielectric layer on the transparent insulating metal oxide layer, and patterning the dielectric layer and the transparent insulating metal oxide layer by means of a photolithography process and a dry etch process. A thin transparent insulating metal oxide layer is deposited by sputtering, followed by an annealing process, and then aluminum is diffused towards a surface of an IGZO oxide semiconductor layer in the subsequence annealing process.

Abstract: Disclosed is a method for manufacturing a thin film transistor, and a thin film transistor, relating to the technical field of liquid crystal display.

Abstract: The present invention discloses a thin film transistor, a method for manufacturing a thin film transistor, and a liquid crystal display panel. The thin film transistor includes a substrate, a gate layer disposed on the substrate, an insulating layer covering the gate layer, a semiconductor layer disposed on the insulating layer; a conductor layer disposed on the semiconductor layer and a source and drain layer provided on the conductor layer and the insulating layer, and a conductor layer or a conductive spacer is provided between the source and drain layer and the semiconductor layer, and the passivation layer is provided on the insulating layer, the source and drain layer, and the semiconductor layer. The leakage current of the thin film transistor of the invention is small, and the quality of the thin film transistor is high.

Abstract: The present disclosure provides a method for manufacturing a TFT substrate and a method for manufacturing a TFT display apparatus, including the steps of: providing a base substrate; forming a source/drain metal layer on the base substrate; depositing a photoresist layer on the source/drain metal layer and patterning the photoresist layer to form a desired pattern of the photoresist layer; using a BCl3 gas to remove metal oxides generated on surface of the source/drain metal layer with air; and using a mixing gas including a Cl2 gas and the BCl3 gas to etch the source/drain metal layer.

Abstract: The present disclosure relates to a thin film transistor (TFT) substrate, a manufacturing method thereof, and an organic light-emitting (OLED) substrate. The interlayer dielectric layer manufactured by the manufacturing method may be configured in the structure of two silicon oxide layers sandwiching one silicon nitride layer. As such, the bonding force between the interlayer dielectric layer and the gate, and the bonding force between the interlayer dielectric layer, and the source and the drain may be improved. The source and the drain may be prevented from falling off from the interlayer dielectric layer during the annealing process. Production yield of the TFT substrate may be improved. The OLED substrate adopting the manufactured of the OLED substrate of the present disclosure may have a better production yield and quality.

Abstract: The present application discloses a thin film transistor, a method for manufacturing a thin film transistor and a liquid crystal display panel, and relates to a display technology field. The thin film transistor includes a substrate, a gate electrode layer and an insulating layer, the gate electrode layer is formed on the substrate, the insulating layer is covered on the gate layer; a semiconductor layer is formed on the insulating layer; a conductor layer is formed on the semiconductor layer; an insulating spacer layer is formed on the insulating layer; a source-drain electrode layer is formed on the conductor layer and the insulating spacer layer; a passivation layer formed on the source-drain electrode layer and the semiconductor layer; wherein the insulating spacer layer is located between the source-drain electrode layer and the semiconductor layer to solve the leakage current too large problem of the thin film transistor.