Patents by Inventor Sony Varghese

Sony Varghese has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250107068
    Abstract: The present technology includes vertical cell array transistor (VCAT) with improved gate induced leakage current. The arrays one or more bit lines arranged in a first horizontal direction and one or more word lines arranged in a second horizontal direction. The arrays include one or more channels extending in a vertical direction generally orthogonal to the first direction and the second horizontal direction, such that the bit lines intersect with a source/drain region of the plurality of channels, and the word lines intersect with gate regions of the plurality of channels. Arrays include where at least one word includes a first section adjacent to the source/drain region and a second section adjacent to the gate region, where the second section contains a high work function material and the first section contains a low work function material.
    Type: Application
    Filed: September 16, 2024
    Publication date: March 27, 2025
    Applicant: Applied Materials, Inc.
    Inventors: Tong LIU, Sony VARGHESE, Zhijun CHEN, Fredrick FISHBURN, Balasubramanian PRANATHARTHIHARAN
  • Publication number: 20250098142
    Abstract: A memory cell array includes a plurality of memory levels stacked in a first direction, each of the plurality of memory levels including a cell transistor having a source region electrically connected to a bit line extending in the first direction, a drain region, a word line layer, a lower channel layer electrically connected to the source region and the drain region and disposed below the word line layer in the first direction, and an upper channel layer electrically connected to the source region and the drain region and disposed above the word line layer in the first direction, and a cell capacitor electrically connected to the drain region, and a plurality of inter-level isolation layers, each separating adjacent memory levels of the plurality of memory levels.
    Type: Application
    Filed: August 22, 2024
    Publication date: March 20, 2025
    Inventors: Tong LIU, Sony VARGHESE
  • Publication number: 20250098149
    Abstract: The present technology includes vertical cell array transistor (VCAT) that include a bit line arranged in a first horizontal direction and a word line arranged in a second horizontal direction. The arrays include a channel extending in a vertical direction generally orthogonal to the first direction and the second horizontal direction, such that the bit line intersects with a source/drain region of the plurality of channels, and the word lines intersect with gate regions of the plurality of channels. Arrays include where the channels have at least one source/drain region and a channel body disposed between the first end and the second end. Arrays include where the channel body has a thickness that is greater than or about 5% less than a thickness of at least a portion of the at least one source/drain region.
    Type: Application
    Filed: September 13, 2024
    Publication date: March 20, 2025
    Applicant: Applied Materials, Inc.
    Inventors: Tong LIU, Sony VARGHESE
  • Publication number: 20250081432
    Abstract: Vertical cell dynamic random-access memory (DRAM) arrays and methods of forming arrays with improved stability and word line resistivity are provided. The arrays include a plurality of bit lines arranged in a first horizontal direction and a plurality of word lines arranged in a second horizontal direction. The arrays include a plurality of channels extending in a vertical direction generally orthogonal to the first direction and the second horizontal direction, such that the plurality of bit lines intersect with a source/drain region of the plurality of channels. In addition, arrays include a bridge extending between a first channel of the plurality of channels and a second channel of the plurality of channels, where the first channel is spaced apart from the second channel in a row extending in the second horizontal direction. Arrays include a gate formed around at least a portion of the plurality of channels and the bridge.
    Type: Application
    Filed: August 27, 2024
    Publication date: March 6, 2025
    Applicant: Applied Materials, Inc.
    Inventors: Zhijun CHEN, Fredrick FISHBURN, Tong LIU, Sony VARGHESE, Balasubramanian PRANATHARTHIHARAN
  • Patent number: 12217974
    Abstract: Embodiments herein are directed to localized stress modulation by implanting a first side of a substrate to reduce in-plane distortion along a second side of the substrate. In some embodiments, a method may include providing a substrate, the substrate comprising a first main side opposite a second main side, wherein a plurality of features are disposed on the first main side, performing a metrology scan to the first main side to determine an amount of distortion to the substrate due to the formation of the plurality of features, and depositing a stress compensation film along the second main side of the substrate, wherein a stress and a thickness of the stress compensation film is determined based on the amount of distortion to the substrate. The method may further include directing ions to the stress compensation film in an ion implant procedure.
    Type: Grant
    Filed: August 6, 2021
    Date of Patent: February 4, 2025
    Assignee: Applied Materials, Inc.
    Inventors: Sony Varghese, Pradeep Subrahmanyan, Dennis Rodier, Kyuha Shim
  • Patent number: 12131948
    Abstract: Embodiments herein include void-free material depositions on a substrate (e.g., in a void-free trench-filled (VFTF) component) obtained using directional etching to remove predetermined portions of a seed layer covering the substrate. In several embodiments, directional etching followed by selective deposition can enable fill material (e.g., metal) patterning in tight spaces without any voids or seams. Void-free material depositions may be used in a variety of semiconductor devices, such as transistors, dual work function stacks, dynamic random-access memory (DRAM), non-volatile memory, and the like.
    Type: Grant
    Filed: July 21, 2023
    Date of Patent: October 29, 2024
    Assignee: Applied Materials, Inc.
    Inventors: M. Arif Zeeshan, Kelvin Chan, Shantanu Kallakuri, Sony Varghese, John Hautala
  • Publication number: 20240341090
    Abstract: A semiconductor structure includes a first active region and a second active region on a substrate, a metal plug electrically connected to the first active region via a contact layer and an interface layer, a bit line electrically connected to the second active region via a bit line contact plug, and a bit line spacer encapsulating the bit line, wherein the first active region and the second active region are lightly n-type doped, the substrate is p-type doped, and the contact layer is epitaxially grown and n-type doped with a graded doping profile that increases from an interface with the first active region to an interface with the interface layer.
    Type: Application
    Filed: March 18, 2024
    Publication date: October 10, 2024
    Inventors: Sony VARGHESE, Tong LIU, Zhijun CHEN, Balasubramanian PRANATHARTHIHARAN
  • Publication number: 20240334683
    Abstract: Memory devices and methods of manufacturing memory devices are described herein. The memory devices include a bitline metal stack on a surface comprising a matrix of conductive bitline contacts (e.g., polysilicon) and insulating dielectric islands (e.g., silicon nitride (SiN)). The bitline metal stack comprises one or more of titanium (Ti), tungsten (W), tungsten nitride (WN), tungsten silicide (WS), or tungsten silicon nitride (WSiN). The memory devices include a bitline metal layer (e.g., tungsten (W)) on a top surface of the insulating dielectric islands and on the bitline metal stack.
    Type: Application
    Filed: March 22, 2024
    Publication date: October 3, 2024
    Applicant: Applied Materials, Inc.
    Inventors: Tong Liu, Sony Varghese, Zhijun Chen, Balasubramanian Pranatharthiharan, Anand N. Iyer
  • Publication number: 20240297068
    Abstract: Some embodiments include a construction having a horizontally-extending layer of fluorocarbon material over a semiconductor construction. Some embodiments include methods of filling openings that extend into a semiconductor construction. The methods may include, for example, printing the material into the openings or pressing the material into the openings. The construction may be treated so that surfaces within the openings adhere the material provided within the openings while surfaces external of the openings do not adhere the material. In some embodiments, the surfaces external of the openings are treated to reduce adhesion of the material.
    Type: Application
    Filed: May 14, 2024
    Publication date: September 5, 2024
    Applicant: Micron Technology, Inc.
    Inventors: Gurtej S. Sandhu, Sony Varghese, John A. Smythe, Hyun Sik Kim
  • Patent number: 12020979
    Abstract: Some embodiments include a construction having a horizontally-extending layer of fluorocarbon material over a semiconductor construction. Some embodiments include methods of filling openings that extend into a semiconductor construction. The methods may include, for example, printing the material into the openings or pressing the material into the openings. The construction may be treated so that surfaces within the openings adhere the material provided within the openings while surfaces external of the openings do not adhere the material. In some embodiments, the surfaces external of the openings are treated to reduce adhesion of the material.
    Type: Grant
    Filed: April 6, 2021
    Date of Patent: June 25, 2024
    Assignee: Micron Technology, Inc.
    Inventors: Gurtej S. Sandhu, Sony Varghese, John A. Smythe, Hyun Sik Kim
  • Patent number: 11980021
    Abstract: Disclosed are 3-D DRAM devices and methods of forming 3-D DRAM devices. One method may include forming a stack of DRAM device layers, forming a MOS substrate directly atop the stack of alternating DRAM device layers, and forming a trench through the MOS substrate and the stack of DRAM device layers. The method may further include depositing a protection layer over the MOS substrate, wherein the protection layer is deposited at a non-zero angle of inclination relative to a vertical extending from a top surface of the MOS substrate.
    Type: Grant
    Filed: June 1, 2022
    Date of Patent: May 7, 2024
    Assignee: Applied Materials, Inc.
    Inventors: Sony Varghese, Fred Fishburn
  • Patent number: 11974423
    Abstract: Examples herein relate to three-dimensional (3D) dynamic random access memory (DRAM) devices and replacement channel processes for fabricating 3D DRAM devices. In an example, a gate dielectric layer is formed on a sacrificial material, and a gate electrode is formed on the gate dielectric layer. After the gate electrode is formed, the sacrificial material is removed and replaced by a semiconductor material. A channel region of a device (e.g., a transistor) that includes the gate dielectric layer and gate electrode is formed in the semiconductor material. The channel region can be vertical or horizontal with respect to a main surface of a substrate on which the device is formed. A capacitor can be formed, such as before or after the semiconductor material is formed, and is electrically connected to the semiconductor material. The device and the capacitor together can form at least part of a 3D DRAM cell.
    Type: Grant
    Filed: December 15, 2021
    Date of Patent: April 30, 2024
    Assignee: Applied Materials, Inc.
    Inventors: Fredrick Fishburn, Arvind Kumar, Sony Varghese
  • Patent number: 11956978
    Abstract: In one embodiment, a method of selectively forming a deposit may include providing a substrate, the substrate having a plurality of surface features, extending at a non-zero angle of inclination with respect to a perpendicular to a plane of the substrate. The method may include directing a reactive beam to the plurality of surface features, the reactive beam defining a non-zero angle of incidence with respect to a perpendicular to the plane of the substrate, wherein a seed layer is deposited on a first portion of the surface features, and is not deposited on a second portion of the surface features. The method may further include exposing the substrate to a reactive deposition process after the directing the reactive ion beam, wherein a deposit layer selectively grows over the seed layer.
    Type: Grant
    Filed: September 3, 2020
    Date of Patent: April 9, 2024
    Assignee: Applied Materials, Inc.
    Inventors: M. Arif Zeeshan, Kelvin Chan, Shantanu Kallakuri, Sony Varghese
  • Publication number: 20240040808
    Abstract: In one embodiment, a method of selectively forming a deposit may include providing a substrate, the substrate having a plurality of surface features, extending at a non-zero angle of inclination with respect to a perpendicular to a plane of the substrate. The method may include directing a reactive beam to the plurality of surface features, the reactive beam defining a non-zero angle of incidence with respect to a perpendicular to the plane of the substrate, wherein a seed layer is deposited on a first portion of the surface features, and is not deposited on a second portion of the surface features. The method may further include exposing the substrate to a reactive deposition process after the directing the reactive ion beam, wherein a deposit layer selectively grows over the seed layer.
    Type: Application
    Filed: October 13, 2023
    Publication date: February 1, 2024
    Applicant: Applied Materials, Inc.
    Inventors: M. Arif Zeeshan, Kelvin Chan, Shantanu Kallakuri, Sony Varghese
  • Publication number: 20230369112
    Abstract: Embodiments herein include void-free material depositions on a substrate (e.g., in a void-free trench-filled (VFTF) component) obtained using directional etching to remove predetermined portions of a seed layer covering the substrate. In several embodiments, directional etching followed by selective deposition can enable fill material (e.g., metal) patterning in tight spaces without any voids or seams. Void-free material depositions may be used in a variety of semiconductor devices, such as transistors, dual work function stacks, dynamic random-access memory (DRAM), non-volatile memory, and the like.
    Type: Application
    Filed: July 21, 2023
    Publication date: November 16, 2023
    Applicant: Applied Materials, Inc.
    Inventors: M. Arif Zeeshan, Kelvin Chan, Shantanu Kallakuri, Sony Varghese, John Hautala
  • Patent number: 11749564
    Abstract: Embodiments herein include void-free material depositions on a substrate (e.g., in a void-free trench-filled (VFTF) component) obtained using directional etching to remove predetermined portions of a seed layer covering the substrate. In several embodiments, directional etching followed by selective deposition can enable fill material (e.g., metal) patterning in tight spaces without any voids or seams. Void-free material depositions may be used in a variety of semiconductor devices, such as transistors, dual work function stacks, dynamic random-access memory (DRAM), non-volatile memory, and the like.
    Type: Grant
    Filed: September 22, 2020
    Date of Patent: September 5, 2023
    Assignee: Applied Materials, Inc.
    Inventors: M. Arif Zeeshan, Kelvin Chan, Shantanu Kallakuri, Sony Varghese, John Hautala
  • Patent number: 11700721
    Abstract: Disclosed are DRAM devices and methods of forming DRAM devices. One non-limiting method may include providing a device, the device including a plurality of angled structures formed from a substrate, a bitline and a dielectric between each of the plurality of angled structures, and a drain disposed along each of the plurality of angled structures. The method may further include providing a plurality of mask structures of a patterned masking layer over the plurality of angled structures, the plurality of mask structures being oriented perpendicular to the plurality of angled structures. The method may further include etching the device at a non-zero angle to form a plurality of pillar structures.
    Type: Grant
    Filed: September 17, 2021
    Date of Patent: July 11, 2023
    Assignee: Applied Materials, Inc.
    Inventor: Sony Varghese
  • Publication number: 20230146831
    Abstract: A semiconductor manufacturing process for forming a three-dimensional (3D) memory structure and a semiconductor device having a 3D memory structure is described. The 3D memory structure comprises layers of memory cells with L shaped conductive layers where the L shaped conductive layers of each layer are coupled to metal lines disposed above the top or upper most layer such that the memory cells in each layer can be coupled to control circuitry.
    Type: Application
    Filed: September 4, 2022
    Publication date: May 11, 2023
    Applicant: Applied Materials, Inc.
    Inventors: Chang Seok Kang, Gill Yong Lee, Fred Fishburn, Tomohiko Kitajima, Sung-Kwan Kang, Sony Varghese
  • Publication number: 20230101155
    Abstract: A memory device architecture, and method of fabricating a three dimensional device are provided. The memory device architecture may include a plurality of memory blocks, arranged in an array, wherein a given memory block comprises: a cell region, the cell region comprising a three-dimensional array of memory cells, arranged in a plurality of n memory cell layers; and a staircase region, the staircase region being disposed adjacent to at least a first side of the cell region, the staircase region comprising a signal line assembly that is coupled to the three-dimensional array of memory cells.
    Type: Application
    Filed: July 19, 2022
    Publication date: March 30, 2023
    Applicant: Applied Materials, Inc.
    Inventors: Chang Seok Kang, Fred Fishburn, Tomohiko Kitajima, Sung-Kwan Kang, Sony Varghese, Gill Yong Lee
  • Patent number: 11569242
    Abstract: Disclosed are DRAM devices and methods of forming DRAM devices. One method may include forming a plurality of trenches and angled structures, each angled structure including a first sidewall opposite a second sidewall, wherein the second sidewall extends over an adjacent trench. The method may include forming a spacer along a bottom surface of the trench, along the second sidewall, and along the first sidewall, wherein the spacer has an opening at a bottom portion of the first sidewall. The method may include forming a drain in each of the angled structures by performing an ion implant, which impacts the first sidewall through the opening at the bottom portion of the first sidewall. The method may include removing the spacer from the first sidewall, forming a bitline over the spacer along the bottom surface of each of the trenches, and forming a series of wordlines along the angled structures.
    Type: Grant
    Filed: April 23, 2021
    Date of Patent: January 31, 2023
    Assignee: APPLIED Materials, Inc.
    Inventors: Sony Varghese, Min Gyu Sung