Patents by Inventor Soo An Kim

Soo An Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6690718
    Abstract: An asymmetric digital subscriber line transceiver unit-card (ATU-C) and a method of controlling the same. The ATU-C includes: a power supply unit; a plurality of modems to be connected to a plurality of asymmetric digital subscriber line transceiver unit-remote (ATU-R) for subscribers; a plurality of power switches for selectively supplying power generated by the power supply unit to the modems; and a microprocessor for controlling the operation of the power switches depending on the connection status between the subscribers and the modems.
    Type: Grant
    Filed: November 24, 1999
    Date of Patent: February 10, 2004
    Assignee: Samsung Electronics Co. Ltd.
    Inventor: Heung-soo Kim
  • Publication number: 20040022700
    Abstract: Disclosed is a photoelectrocatalytic purifier and a method for purifying fluid such as air by using the photoelectrocatalytic purifier. The photoelectrocatalytic purifier according to the present invention is characterized in that it comprises a discharge plate having anode property, a discharge section being positioned parallel to the discharge plate and having cathode property, a photocalyst being coated on a discharge surface of the discharge plate, ultraviolet lamps being disposed on a rear of the discharge section, and a power supply and booster for supplying a voltage.
    Type: Application
    Filed: July 28, 2003
    Publication date: February 5, 2004
    Inventors: Hak Soo Kim, Yong Gun Shul, Ju Hyeon Lee, Soo Jae Yu
  • Publication number: 20040024191
    Abstract: The invention features an enhancer cassette having the formula [X-Y]n, wherein each X is independently a noradrenergic cell-specific enhancer derived from a DBH gene; Y is absent or is a mono or polynucleotide that has between one and thirty nucleotides; and n is an integer between three and twenty, inclusive.
    Type: Application
    Filed: January 23, 2003
    Publication date: February 5, 2004
    Inventor: Kwang-Soo Kim
  • Publication number: 20040023491
    Abstract: Particular aqueous slurry compositions including fine abrasive particles and polishing methods for polishing insulating films such as silicon dioxide and silicon nitride using such slurry compositions are provided in which the abrasive particles have a mean particle surface area of at least about 100 m2/g and the slurry compositions include the abrasive particles and at least one additive selected from potassium hydroxide, sodium hydroxide, ammonium hydroxide and amine compounds.
    Type: Application
    Filed: March 11, 2003
    Publication date: February 5, 2004
    Inventors: Young-Sam Lim, Gi-Hag Lee, Dong-Jun Lee, Kyoung-Moon Kang, Jae-Hyun So, Nam-Soo Kim
  • Patent number: 6686606
    Abstract: The Mo or MoW composition layer has a low resistivity of less than 15 &mgr;&OHgr;cm and is etched to have a smooth taper angle using an Al alloy enchant or a Cr enchant, and the Mo or MoW layer is used for a wiring of a display or a semiconductor display along with an Al layer or a Cr layer. Since the Mo or MoW layer can be deposited so as to give low stress to the substrate by adjusting the deposition pressure, a single MoW layer can be used as a wiring by itself. When contact holes are formed in the passivation layer or the gate insulating layer, a lateral etch is reduced by using polymer layer, an etch gas system using CF4+O2 can prevent the etch of the Mo or MoW alloy layer, and an etch gas of SF6+HCl (+He) or SF6+Cl2 (+He) can form the edge profile of contact holes to be smoothed.
    Type: Grant
    Filed: March 18, 2003
    Date of Patent: February 3, 2004
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Chang-Oh Jeong, Yang-Sun Kim, Myung-Koo Hur, Young-Jae Tak, Mun-Pyo Hong, Chi-Woo Kim, Jang-Soo Kim, Chua-Gi You
  • Publication number: 20040019736
    Abstract: Disclosed is a portable flash memory with extended memory capacity comprising a main body connected to a host computer and an extended body connected to the main body. The main body comprises a flash memory being a nonvolatile memory for electrically recording or erasing data, an USB interface connected to a USB port of the host computer so as to output data recorded on the flash. memory to the host computer or connect the host computer to the main body to receive data outputted from the host computer and record the data on the flash memory, an extended interface connected to the extended body so as to connect the extended body to the main body, and a microcomputer for controlling data input/output between the flash memory and the host computer and controlling the operation of the extended body.
    Type: Application
    Filed: March 5, 2003
    Publication date: January 29, 2004
    Inventors: Dug-Soo Kim, Dong-Jin Kim, Seong-Soo Park
  • Publication number: 20040017151
    Abstract: An organic electroluminescent display (ELD) device includes a first substrate having a plurality of pixel regions including a plurality of pixels, a second substrate spaced apart and facing the first substrate, a plurality of switching elements and a plurality of driving elements interconnected on the second substrate, a plurality of connecting electrodes connected to each of the driving elements, a first electrode formed on an inner surface of the first substrate, a plurality of partitions formed on the first electrode, the partitions being formed along boundaries of neighboring pixels, a plurality of organic light-emitting layers disposed on the first electrode, a plurality of second electrodes formed on the organic light-emitting layers, each of the second electrodes are independently formed in each of the pixel regions, are separated by the partitions, and are electrically connected to one of the connecting electrodes, and a plurality of insulating layer patterns formed between the first electrode and the
    Type: Application
    Filed: June 30, 2003
    Publication date: January 29, 2004
    Applicant: LG.Philips LCD Co.
    Inventors: Ock-Hee Kim, Kwan-Soo Kim
  • Patent number: 6683452
    Abstract: A display apparatus of magnetic flux density for detecting an internal crack of a metal or a shape of the metal includes a three-dimensional magnetic flux focusing unit installed near the metal, for concentrating magnetic flux generated by the metal, a magnetic flux density measurement unit installed near the magnetic flux focusing unit, for measuring changes in magnetic flux density concentrated by the magnetic flux focusing unit, and a display unit electrically connected with the magnetic flux measurement unit, for real-time displaying and storing changes in the magnetic flux density.
    Type: Grant
    Filed: November 30, 2001
    Date of Patent: January 27, 2004
    Assignee: Lacomm Co., Ltd.
    Inventors: Jin-yi Lee, Won-ha Choi, Min-soo Kim, Dae-jung Kim, Moon-phil Kang
  • Publication number: 20040014281
    Abstract: The present invention relates to a method of manufacturing a flash memory device. The method comprises the steps of sequentially depositing a pad oxide film and a pad nitride film on a semiconductor substrate, when trenches are formed by etching the pad nitride film, the pad oxide film and the substrate using a mask for forming a device isolation film, forming trenches having a different depth in a cell region and in a peripheral by controlling an etch angle and etch target depending on the width of the trench, depositing trench insulating films on the entire surfaces to bury the trenches with the trench insulating films, performing a chemical mechanical polishing process and a strip process for the trench insulating films to form the trench insulating film upper structures of which are protruded, forming a well region through an ion implantation process, and forming a tunnel oxide film, a floating gate, a dielectric film and a control gate.
    Type: Application
    Filed: December 27, 2002
    Publication date: January 22, 2004
    Applicant: Hynix Semiconductor Inc.
    Inventors: Jum Soo Kim, Sung Mun Jung
  • Publication number: 20040014295
    Abstract: The present invention relates to a method for fabricating a capacitor employing ALD-TiN as an upper electrode and being suitable for preventing a deterioration of a leakage current property which uses an ALD-TiN as an upper electrode. The method for fabricating the capacitor includes: forming a lower electrode on a semiconductor substrate; forming a dielectric layer on the lower electrode; loading the semiconductor substrate containing the dielectric layer into a deposition chamber; nitriding a surface of the dielectric layer while NH3 gas is flowed into the deposition chamber; and forming an upper layer by using a source gas NH3, containing Titanium (Ti) on the nitrated surface of the dielectric layer through an atomic layer deposition (ALD) method.
    Type: Application
    Filed: July 8, 2003
    Publication date: January 22, 2004
    Applicant: HYNIX SEMICONDUCTOR INC.
    Inventor: Young-Soo Kim
  • Publication number: 20040014251
    Abstract: An organic electroluminescent display device includes first and second substrates facing and spaced apart from each other, the first and second substrates having a plurality of sub-pixel regions, a thin film transistor provided at each of the plurality of sub-pixel regions on an inner surface of the first substrate, a first electrode on an inner surface of the second substrate, an organic electroluminescent layer on the first electrode, a second electrode on the organic electroluminescent layer at each of the plurality of sub-pixel regions, and a connection pattern contacting the thin film transistor and the second electrode, wherein a melting temperature of the connection pattern is lower than a melting temperature of the second electrode.
    Type: Application
    Filed: June 30, 2003
    Publication date: January 22, 2004
    Applicant: LG.Philips LCD Co., Ltd.
    Inventors: Jae-Yong Park, Choong-Keun Yoo, Ock-Hee Kim, Nam-Yang Lee, Kwan-Soo Kim
  • Publication number: 20040013002
    Abstract: The present invention relates to a method of erasing flash memory cells. In the flash memory cell having a substrate, a source, a drain, a tunnel oxide film, a floating gate, a dielectric film and a control gate, the method of erasing the flash memory cell comprises the steps of performing an erase operation for the cell, by applying a negative voltage being an erase voltage to the control gate and a positive voltage being an erase voltage to the substrate, discharging the control gate by making the control gate grounded, discharging the source by making the source grounded, and simultaneously performing a discharge operation and a recovery operation by making the substrate grounded. Therefore, the threshold voltages of the cells can be converted to have a constant voltage even though additional recovery operation is not performed.
    Type: Application
    Filed: December 10, 2002
    Publication date: January 22, 2004
    Applicant: Hynix Semiconductor Inc.
    Inventors: Sung Mun Jung, Jum Soo Kim
  • Publication number: 20040014269
    Abstract: The present invention relates to a method of manufacturing a flash memory device. The method comprises the steps of sequentially depositing a pad oxide film and a pad nitride film on a semiconductor substrate, etching the pad nitride film, the pad oxide film and the substrate using a mask for forming a device isolation film to form a trench in which the top corner of an active region has a dual profile, depositing a trench insulating film on the entire structure to bury the trench, performing a CMP process and a strip process for the trench insulating film to form the trench insulating film the top structure of which has protrusion, forming a well region through an ion implantation process, and forming a tunnel oxide film, a floating gate, a dielectric film and a control gate. Therefore, characteristics of the device can be improved by improving a phenomenon that a tunnel oxide film is made thin.
    Type: Application
    Filed: December 10, 2002
    Publication date: January 22, 2004
    Inventors: Jum Soo Kim, Sung Mun Jung, Jung Ryul Ahn
  • Publication number: 20040013676
    Abstract: The present invention relates to a pharmaceutical composition for immunotherapy of autoimmune disease, which comprises (a) a therapeutically effective dose of maturated dendritic cells and (b) a pharmaceutically acceptable carrier and a method for immunotherapy of autoimmune disease.
    Type: Application
    Filed: December 27, 2002
    Publication date: January 22, 2004
    Inventors: Yong-Soo Bae, Choon-Ju Jeon, Yoon Lee, Ki-Duk Song, Chang-Hyun Kim, Il-Soo Kim, Hyun-Pil Cho, Seon-Gil Do, Hye-Jung Nam
  • Publication number: 20040012772
    Abstract: Provided is a condensation particle counter. The condensation particle counter measures the number of ultra-fine particles by growing the ultra-fine particles through a condensing process. The counter comprises a capillary in which vapor of operating liquid is condensed and the ultra-fine particles grow. An insulating material surrounds the capillary to shut out heat flow between the capillary and the environment. The condensation particle counter according to the present invention can use various operating liquids including alcohol and water, and can be also applied to semiconductor clean rooms.
    Type: Application
    Filed: March 24, 2003
    Publication date: January 22, 2004
    Inventors: Kang-Ho Ahn, Sang-Soo Kim, Hae-Young Jeong
  • Publication number: 20040008292
    Abstract: A liquid crystal display includes an insulating substrate, gate and data lines formed on the substrate to define pixel areas, or collectively a display area. Gate signal interconnection wires are formed at a corner portion of the substrate outside the display area to transmit gate electrical signals, and provided with gate signal interconnection lines and first and second gate signal interconnection pads connected to both ends of the gate signal interconnection lines. A gate insulating layer, and a protective layer are further formed on the substrate, and provided with first and second contact holes exposing the first and second gate signal interconnection pads. Gate and data signal transmission films are attached to the substrate, and provided with first and second gate signal leads and first and second gate signal wires. The first and second gate signal leads are connected to the first and second gate signal interconnection pads through the first and second contact holes.
    Type: Application
    Filed: January 27, 2003
    Publication date: January 15, 2004
    Inventors: Dong-Gyu Kim, Sang-Soo Kim, Sang-Wook Lee
  • Patent number: 6677616
    Abstract: A method of fabricating a thin film transistor substrate for an X-ray detector reduces the number of steps in etching processes using masks. In the method, a gate line, a gate pad and a gate electrode of a thin film transistor are simultaneously formed on a certain substrate. A gate insulating layer is entirely coated, and then a semiconductor layer of the thin film transistor is formed. A data pad, a data line, source and drain electrodes of the thin film transistor and a ground electrode are simultaneously formed. An electrode for a charging capacitor is formed, and then an insulating film for the charging capacitor is formed. An electrode for preventing an etching of the insulating film for the charging capacitor is formed. A protective film for protecting the thin film transistor is formed. Contact holes are formed in the protective film. Finally, a pixel electrode is provided.
    Type: Grant
    Filed: December 30, 2002
    Date of Patent: January 13, 2004
    Assignee: LG.Philips LCD Co., Ltd.
    Inventor: Ik Soo Kim
  • Publication number: 20040004432
    Abstract: An organic electroluminescent display device includes first and second substrates facing and spaced apart from each other, the first and second substrates having a plurality of pixel regions and a peripheral region surrounding the plurality of pixel regions, a first pad disposed at the peripheral region on an inner surface of the first substrate, a driving thin film transistor disposed at each of the plurality of pixel regions on the inner surface of the first substrate, the driving thin film transistor including an active layer, a gate electrode, and source and drain electrodes, a first connection electrode structure connected to the drain electrode, a second connection electrode structure connected to the first pad, the second connection electrode structure being the same as the first connection electrode structure, a first electrode on an entire inner surface of the second substrate, the first electrode being connected to the second connection electrode structure, an organic emission layer on the first ele
    Type: Application
    Filed: June 30, 2003
    Publication date: January 8, 2004
    Applicant: LG.Philips LCD Co., Ltd.
    Inventors: Jae-Yong Park, Choong-Keun Yoo, Ock-Hee Kim, Nam-Yang Lee, Kwan-Soo Kim
  • Publication number: 20040003168
    Abstract: An interface device and method thereof interfacing between a host processor and a NAND flash memory includes a register file, an internal memory, a flash interface portion, and a finite state machine. The register file receive a command from the host processor to control an operation of the NAND flash memory and an operation information to execute the command and storing the command and the operation information. The flash interface portion controls a control signal to operate the NAND flash memory, outputs the command, the operation information, or the host data, and controls an I/O signal wire through which the flash data is inputted to the NAND flash memory. The finite state machine extracts the command and the operation information from the register file and controls the internal memory and the flash interface portion to execute the command.
    Type: Application
    Filed: May 28, 2003
    Publication date: January 1, 2004
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Jin-soo Kim, Yong-je Kim, Jin-chul Pyo
  • Publication number: 20040000547
    Abstract: A wall-mounted type microwave oven selectively changes a discharging direction of air from a cooking chamber to the outside of a room and to the inside of the room. The microwave oven includes an oven body having a cooking chamber and an electric component compartment, an exhaust flow path which communicates with a lower portion of the oven body and an upper portion of the oven body to exhaust air existing under the oven body to the outside, a ventilation flow path which communicates with the inside of the cooking chamber and a front air outlet to ventilate the cooking chamber, a communicating flow path which is provided in the oven body and allows the exhaust flow path to communicate with the ventilation flow path, and a path-converting device which is provided in the communicating flow path and selectively discharges the air exhausted from the cooking chamber toward either the front air outlet or the exhaust flow path.
    Type: Application
    Filed: October 25, 2002
    Publication date: January 1, 2004
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventor: Gong-Soo Kim