Abstract: Disclosed is a semiconductor light emitting device comprising: a substrate; a first semiconductor layer, which is provided on the substrate and has a first conductivity; an active layer, which is provided on the first semiconductor layer and generates ultraviolet light by electron-hole recombination; a second semiconductor layer, which is provided on the active layer and has a second conductivity different from the first conductivity; a first electrode electrically connected to the first semiconductor layer; a second electrode electrically connected to the second semiconductor layer; a second region that includes a plurality of protruded parts of the active layer and the second semiconductor layer protruded from the first semiconductor layer as seen in cross-sectional view and recesses between the protruded parts; and a first region surrounding the second region.

Abstract: The present disclosure relates to a semiconductor light emitting device comprising: a growth substrate; a first semiconductor layer; a first light emitting part, including an active layer which is provided on the first semiconductor layer and generates ultraviolet light, and a second semiconductor layer; a second light emitting part, including an active layer which is provided on the first semiconductor layer and generates ultraviolet light, and a second semiconductor layer; a connecting part which is provided on the first semiconductor layer and connects the first light emitting part and the second light emitting part; an insulating layer that covers the first semiconductor layer, the first light emitting part, the second light emitting part and the connecting part; a first pad electrode which is formed on the insulating layer; and a second pad electrode which is formed on the insulating layer.

Abstract: The present disclosure relates to a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises: one or more light emitting units, each including a first semiconductor layer, an active layer and a second semiconductor layer sequentially formed on a growth substrate; an electrode unit including a first semiconductor layer having a first conductivity and a metal layer formed on the first semiconductor layer; and one or more bonding layers for electrically connecting to the light emitting units and electrode unit, respectively, wherein each bonding layer has a first region on which the light emitting units and the electrode unit are arranged, and a second region having a larger planar area than that of the first region and being electrically connected to an external substrate.

Abstract: The disclosure relates to a semiconductor light emitting device from which a growth substrate is removed, comprising: a semiconductor light emitting diode including a first semiconductor layer having a first conductivity, an active layer for generating light by electron-hole recombination, and a second semiconductor layer having a second conductivity different from the first conductivity, in which the first semiconductor layer is formed in a direction where the growth substrate is removed; a metal layer formed on the second semiconductor layer; and an insulating layer for covering lateral faces of the semiconductor light emitting diode and lateral faces of the metal layer, and a manufacturing method for such a semiconductor light emitting device.

Abstract: Disclosed is a semiconductor light emitting device characterized by being a flip chip including: a plurality of semiconductor layers, which includes a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity type, and an active layer interpositioned between the first and second semiconductor layers and adapted to generate light by electron-hole recombination; an insulating layer, which is formed on the plurality of semiconductor layers and has openings; and an electrode formed on the insulating layer and electrically connected to the plurality of semiconductor layers through the opening, wherein the electrode has a top face and a bottom face, with the top face having a smaller area than the bottom face.

Abstract: The present disclosure relate to a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises a semiconductor light emitting chip, and first electrodes electrically connected to the semiconductor light emitting chip, with the first electrodes each having a planar area larger than that of the semiconductor light emitting chip, wherein lower surfaces of the first electrodes are exposed externally, and an insulating material is filled in-between inner lateral surfaces of the first electrodes.

Abstract: Disclosed is a semiconductor light emitting device including: a body with a bottom part having at least one hole formed therein; a semiconductor light emitting device chip to be placed in each of the at least one hole, with the semiconductor light emitting device chip being comprised of a plurality of semiconductor layers including an active layer for generating light by electron-hole recombination, and an electrode electrically connected to the plurality of semiconductor layers; and an encapsulating member for covering the semiconductor light emitting device chip, wherein a hole—defining inner face of the bottom part has a plurality of angles of inclination.

Abstract: Disclosed is a method for manufacturing a semiconductor light emitting device, the method including: providing a mask having a plurality of openings on a base; placing semiconductor light emitting chips on exposed portions of the base through the openings, respectively, by a device carrier which recognizes a shape of the mask and calibrates position for a semiconductor light emitting chip to be seated; and supplying an encapsulant to each of the openings, with the mask serving as a dam.

Abstract: Disclosed is a semiconductor light emitting device comprising: a substrate; a first semiconductor layer, which is provided on the substrate and has a first conductivity; an active layer, which is provided on the first semiconductor layer and generates ultraviolet light by electron-hole recombination; a second semiconductor layer, which is provided on the active layer and has a second conductivity different from the first conductivity; a first electrode electrically connected to the first semiconductor layer; a second electrode electrically connected to the second semiconductor layer; a second region that includes a plurality of protruded parts of the active layer and the second semiconductor layer protruded from the first semiconductor layer as seen in cross-sectional view and recesses between the protruded parts; and a first region surrounding the second region.

Abstract: Disclosed is a semiconductor light emitting device characterized by being a flip chip including: a plurality of semiconductor layers, which includes a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity type, and an active layer interpositioned between the first and second semiconductor layers and adapted to generate light by electron-hole recombination; an insulating layer, which is formed on the plurality of semiconductor layers and has openings; and an electrode formed on the insulating layer and electrically connected to the plurality of semiconductor layers through the opening, wherein the electrode has a top face and a bottom face, with the top face having a smaller area than the bottom face.

Abstract: Disclosed is a method for manufacturing a semiconductor light emitting device, the method including: providing a mask having a plurality of openings on a base; placing semiconductor light emitting chips on exposed portions of the base through the openings, respectively, by a device carrier which recognizes a shape of the mask and calibrates position for a semiconductor light emitting chip to be seated; and supplying an encapsulant to each of the openings, with the mask serving as a dam.

Abstract: The present disclosure relates to a semiconductor light emitting device, comprising: a plurality of semiconductor layers that grows sequentially on a growth substrate, with the plurality of semiconductor layers including a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer, generating a light with a first wavelength via electron-hole recombination; a first electrode, supplying either electrons or holes to the plurality of semiconductor layers; a second electrode, supplying, to the plurality of semiconductor layers, electrons if the holes are supplied by the first electrode, or holes if the electrons are supplied by the first electrode; a phosphor part provided over the first semiconductor layer on the side of the growth substrate, converting the light with the first wavelength generated in the active layer i

Abstract: The present disclosure relates to a semiconductor light emitting device, comprising: a plurality of semiconductor layers that grows sequentially on a growth substrate, with the plurality of semiconductor layers including a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer, generating a light with a first wavelength via electron-hole recombination; a first electrode, supplying either electrons or holes to the plurality of semiconductor layers; a second electrode, supplying, to the plurality of semiconductor layers, electrons if the holes are supplied by the first electrode, or holes if the electrons are supplied by the first electrode; a phosphor part provided over the first semiconductor layer on the side of the growth substrate, converting the light with the first wavelength generated in the active layer i

Abstract: Disclosed is a method for manufacturing a semiconductor light emitting device, the method including: providing a mask having a plurality of openings on a base; placing semiconductor light emitting chips on exposed portions of the base through the openings, respectively, by a device carrier which recognizes a shape of the mask and calibrates position for a semiconductor light emitting chip to be seated; and supplying an encapsulant to each of the openings, with the mask serving as a dam.

Abstract: Disclosed is a method for manufacturing a semiconductor light emitting device, the method including: providing a mask having a plurality of openings on a base; placing semiconductor light emitting chips on exposed portions of the base through the openings, respectively, by a device carrier which recognizes a shape of the mask and calibrates position for a semiconductor light emitting chip to be seated; and supplying an encapsulant to each of the openings, with the mask serving as a dam.

Abstract: The present disclosure relates to a semiconductor light emitting device and a method for manufacturing the same, in which the semiconductor light emitting device includes a semiconductor light emitting chip having a semiconductor light emitting part for generating light by electron-hole recombination, and at least one electrode electrically connected to the semiconductor light emitting part; a wall placed on a lateral side of the semiconductor light emitting part, with the wall having an elevated upper end caused by surface tension effects; and an encapsulant arranged in a bowl that is defined by the upper end of the wall and the semiconductor light emitting part, with the encapsulant for transmitting therethrough a light from the semiconductor light emitting part.

Abstract: Disclosed is a method for manufacturing a semiconductor light emitting device, the method including: providing a mask having a plurality of openings on a base; placing semiconductor light emitting chips on exposed portions of the base through the openings, respectively, by a device carrier which recognizes a shape of the mask and calibrates position for a semiconductor light emitting chip to be seated; and supplying an encapsulant to each of the openings, with the mask serving as a dam.

Abstract: Disclosed is a semiconductor light emitting device including: a body with a bottom part having at least one hole formed therein; a semiconductor light emitting device chip to be placed in each of the at least one hole, with the semiconductor light emitting device chip being comprised of a plurality of semiconductor layers including an active layer for generating light by electron-hole recombination, and an electrode electrically connected to the plurality of semiconductor layers; and an encapsulating member for covering the semiconductor light emitting device chip, wherein a hole—defining inner face of the bottom part has a plurality of angles of inclination.

Abstract: Disclosed is a semiconductor light emitting device, including: a plurality of semiconductor layers; a non-conductive reflective film coupled to the plurality of the semiconductor layers; and one or more electrodes formed on the non-conductive reflective film and electrically connected to the plurality of semiconductor layers, in which the one or more electrodes respectively include a lower electrode layer for reflecting light generated in the active layer and then passed the non-conductive reflective film, and an upper electrode layer arranged on the lower electrode layer for preventing a foreign material from penetrating into the lower electrode layer.

Abstract: Disclosed is a semiconductor light emitting device including: a plurality of semiconductor layers; a first non-conductive reflective film formed on the plurality of semiconductor layer to reflect light from the active layer, wherein the first non-conductive reflective film includes multiple layers and has a first incident angle as the Brewster angle; a second non-conductive reflective film formed on the first non-conductive reflective film to reflect light transmitted through the first non-conductive reflective film, wherein the second non-conductive reflective film includes multiple layers, with part of which being made of a different material from the first non-conductive reflective film, and has a second incident angle as the Brewster angle, different from the first incident angle; and an electrode electrically connected to one of the plurality of semiconductor layers.