Abstract: The present disclosure relates to a III-nitride semiconductor light-emitting device including an n-type nitride semiconductor layer, a p-type nitride semiconductor layer doped with a p-type dopant, an active layer disposed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer and including a quantum well layer to generate light by recombination of electrons and holes, and a diffusion barrier layer disposed between the quantum well layer and the p-type nitride semiconductor layer to be in contact with both layers, having a surface formed to make the interface with the p-type nitride semiconductor layer smooth, and to prevent diffusion of the p-type dopant into the quantum well layer.

Abstract: The present invention relates to a III-nitride semiconductor light-emitting device having high external quantum efficiency, provides a III-nitride compound semiconductor light-emitting device including an active layer generating light by recombination of electrons and holes and containing gallium and nitrogen, an n-type Al(x)ln(y)Ga(1-x-y)N layer epitaxially grown before the active layer is grown, and an n-type electrode electrically contacting with the n-type Al(x)ln(y)Ga(1-x-y)N layer, in which the n-type Al(x)ln(y)Ga(1-x-y)N layer has a surface which is exposed by etching and includes a region for scribing and breaking the device and a region for contact with the n-type electrode, and the surface of the region for scribing and breaking the device is roughened, thereby it is possible to increase external quantum efficiency of the light-emitting device.

Abstract: The present disclosure relates to a III-nitride semiconductor light emitting device, and more particularly, to a III-nitride semiconductor light emitting device which can facilitate current spreading and improve electrostatic discharge characteristic by providing an undoped GaN layer with a thickness over 100 ? in an n-side contact layer.

Abstract: The present disclosure relates to a III-nitride semiconductor light emitting device, and more particularly, to a III-nitride semiconductor light emitting device which can facilitate current spreading and improve electrostatic discharge characteristic by providing an undoped GaN layer with a thickness over 300 ? in an n-side contact layer.

Abstract: The present invention relates to a method for fabricating a gallium nitride(GaN) based nitride layer including a step of forming a silicon carbide buffer layer on a substrate, a step of forming a wetting layer having a composition of In(x1)Ga(y1)N (0<x1?1, 0?y1<1, x1+y1=1) on the silicon carbide buffer layer, and a step of forming a nitride layer containing gallium and nitrogen on the wetting layer, thereby can implement an opto-electronic device of high efficiency and high reliability.

Abstract: The present invention relates to a III-nitride semiconductor light emitting device comprising a plurality of III-nitride semiconductor layers including an active layer emitting light by recombination of electrons and holes, the plurality of III-nitride semiconductor layers having a p-type III-nitride semiconductor layer at the top thereof, a SiaCbNc (a?0,b>0,c?0) layer grown on the p-type III-nitride semiconductor layer, the SiaCbNc layer having an n-type conductivity and a thickness of 5 ? to 500 ? for the holes to be injected into the p-type III-nitride semiconductor layer by tunneling, and a p-side electrode formed on the SiaCbNc layer. According to the present invention, a SiaCbNc (a?0,b>0,c>0) layer which can be doped with a high concentration is intervened between a p-type nitride semiconductor layer and a p-side electrode. Therefore, the present invention can solve the conventional problem.

Abstract: The present invention relates to a HI-nitride semiconductor light-emitting device having high external quantum efficiency, provides a HI-nitride compound semiconductor light-emitting device including an active layer generating light by recombination of electrons and holes and containing gallium and nitrogen, an n-type Al(x)ln(y)Ga(1-x-y)N layer epitaxially grown before the active layer is grown, and an n-type electrode electrically contacting with the n-type Al(x)ln(y)Ga(1x-y)N layer, in which the n-type Al(x)ln(y)Ga(1-x-y)N layer has a surface which is exposed by etching and includes a region for scribing and breaking the device and a region for contact with the n-type electrode, and the surface of the region for scribing and breaking the device is rough-ened, thereby it is possible to increase external quantum efficiency of the light-emitting device.

Abstract: The present invention relates to a III-nitride semiconductor light emitting device comprising a plurality of III-nitride semiconductor layers including an active layer emitting light by recombination of electrons and holes, the plurality of III-nitride semiconductor layers having a p-type III-nitride semiconductor layer at the top thereof, an SiaCbNc (a?0,b>0,c?0,a+c>0) layer grown on the p-type III-nitride semiconductor layer, the SiaCbNc (a?0,b>0,c?0,a+c>0) layer having an n-type conductivity and a thickness of 5 ? to 500 ? for the holes to be injected into the p-type III-nitride semiconductor layer by tunneling, and a p-side electrode formed on the SiaCbNc (a?0,b>0,c?0,a+c>0) layer. Generally, in III-nitride semiconductor light emitting devices, if a p-side electrode is formed directly on a p-type nitride semiconductor, high contact resistance is generated due to a high energy bandgap and low doping efficiency of the p-type nitride semiconductor.

Abstract: Disclosed is a method for fabricating a self-aligned submicron gate electrode using an anisotropic etching process. The method involves the steps of laminating a dummy emitter defining a dummy emitter region over a heterojunction bipolar transistor structure including layers sequentially formed over a semiconductor substrate to define a base region, an emitter region, and an emitter cap region, respectively, defining a line having a width of about 1 micron on the dummy emitter by use of a photoresist while using a contact aligner, selectively anisotropic etching the dummy emitter at a region where the line is defined, to allow the dummy emitter to have an etched portion having a bottom surface with a width less than the width of the line defined by the photoresist, and depositing a contact metal on the etched portion of the dummy emitter, thereby forming a gate.