Abstract: Disclosed is a semiconductor light emitting device including: multiple semiconductor layers including a first semiconductor layer, a second semiconductor layer, and an active layer; an electrode electrically connected with the multiple semiconductor layers; a light absorption barrier disposed about at least the electrode; and a non-conductive reflective film adapted to cover the multiple semiconductor layers, the light absorption barrier and the electrode and to reflect light from the active layer, wherein the non-conductive reflective film has an abnormal region of a lower reflectivity around the electrode due to a height difference between the light absorption barrier and the electrode, wherein a portion of the non-conductive reflective film exposed from the electrode is made longer than the abnormal region as seen in a cross-sectional view of the electrode.

Abstract: Disclosed is a semiconductor light emitting device including: a plurality of semiconductor layers; a non-conductive reflective film which is formed on the plurality of semiconductor layers; and first and second electrodes formed on the non-conductive reflective film, wherein a spacing between the first electrode and the second electrode is 80 ?m or greater, and a ratio of a combined area of the first and second electrodes to a planform area of the semiconductor light emitting device as seen on a top view is 0.7:1 or less.

Abstract: Disclosed is a semiconductor light emitting device, including: a body, which has a bottom part with at least one hole formed therein, a side wall, and a cavity defined by the bottom part and the side wall; a semiconductor light emitting chip, which is placed in each hole and includes plural semiconductor layers adapted to generate light by electron-hole recombination and electrodes electrically connected to the plural semiconductor layers; and an encapsulating member provided at least to the cavity to cover the semiconductor light emitting chip, in which the electrodes of the semiconductor light emitting chip are exposed towards the lower face of the bottom part of the body.

Abstract: Disclosed is a semiconductor light emitting device including: a plurality of semiconductor layers; a first non-conductive reflective film formed on the plurality of semiconductor layer to reflect light from the active layer, wherein the first non-conductive reflective film includes multiple layers and has a first incident angle as the Brewster angle; a second non-conductive reflective film formed on the first non-conductive reflective film to reflect light transmitted through the first non-conductive reflective film, wherein the second non-conductive reflective film includes multiple layers, with part of which being made of a different material from the first non-conductive reflective film, and has a second incident angle as the Brewster angle, different from the first incident angle; and an electrode electrically connected to the plurality of semiconductor layers.

Abstract: The present disclosure relates to a semiconductor light emitting device and a method for manufacturing the same, in which the semiconductor light emitting device includes a semiconductor light emitting chip having a semiconductor light emitting part for generating light by electron-hole recombination, and at least one electrode electrically connected to the semiconductor light emitting part; a wall placed on a lateral side of the semiconductor light emitting part, with the wall having an elevated upper end caused by surface tension effects; and an encapsulant arranged in a bowl that is defined by the upper end of the wall and the semiconductor light emitting part, with the encapsulant for transmitting therethrough a light from the semiconductor light emitting part.

Abstract: Disclosed is a method for manufacturing a semiconductor light emitting device, the method including: providing a mask having a plurality of openings on a base; placing semiconductor light emitting chips on exposed portions of the base through the openings, respectively, by a device carrier which recognizes a shape of the mask and calibrates position for a semiconductor light emitting chip to be seated; and supplying an encapsulant to each of the openings, with the mask serving as a dam.

Abstract: Disclosed is a semiconductor light emitting device including: a plurality of semiconductor layers; and a first electrode which is formed on an exposed region of the first semiconductor layer created by mesa etching portions of the second semiconductor layer, the active layer and the first semiconductor layer, and includes a contact layer in contact with the first semiconductor layer, a reflective layer formed on the contact layer, while facing an exposed region of the active layer created by mesa etching and reflecting light, and an anti-rupture layer formed on the reflective layer.

Abstract: Disclosed is a semiconductor light emitting device, including: a plurality of semiconductor layers grown sequentially on a growth substrate; a first electrode part, which is in electrical communication with the first semiconductor layer and supplies one of electrons or holes thereto; a second electrode part, which is in electrical communication with the second semiconductor layer and supplies the other one of electrons or holes thereto; and a non-conductive reflective film, which is formed on the plurality of semiconductor layers for reflecting the light generated in the active layer towards the growth substrate and has an opening formed therein, wherein at least one of the first and second electrode parts includes a lower electrode exposed at least partly through the opening; an upper electrode provided on the non-conductive reflective film; and an electrical connection, which comes into contact with the lower electrode by passing through the opening and is in electrical communication with the upper electrod

Abstract: Disclosed is a semiconductor light emitting device including: a plurality of semiconductor layers; a non-conductive reflective film which is formed on the plurality of semiconductor layers; and first and second electrodes formed on the non-conductive reflective film, wherein a spacing between the first electrode and the second electrode is 80 ?m or greater, and a ratio of a combined area of the first and second electrodes to a planform area of the semiconductor light emitting device as seen on a top view is 0.7:1 or less.

Abstract: A semiconductor light-emitting device of the present disclosure includes a plurality of semiconductor layers; a first inclined face having a first slope inside the plurality of semiconductor layers, which connects an etched-exposed surface of the first semiconductor layer with the surface of the second semiconductor layer and reflects the light from the active layer towards the first semiconductor layer; a second inclined face having a second slope greater than the first slope, which is provided around the plurality of semiconductor layers and reflects the light from the active layer towards the first semiconductor layer; a non-conductive reflective film formed on the second semiconductor layer, for reflecting the light from the active layer towards the first semiconductor layer.

Abstract: Disclosed is a semiconductor light emitting device, including: a plurality of semiconductor layers; a non-conductive reflective film coupled to the plurality of the semiconductor layers; and one or more electrodes formed on the non-conductive reflective film and electrically connected to the plurality of semiconductor layers, in which the one or more electrodes respectively include a lower electrode layer for reflecting light generated in the active layer and then passed the non-conductive reflective film, and an upper electrode layer arranged on the lower electrode layer for preventing a foreign material from penetrating into the lower electrode layer.

Abstract: Disclosed is a frame for a semiconductor light emitting device to receive a semiconductor light emitting chip, the frame including: a side wall; and a bottom part, which is connected to the side wall and has at least one hole for receiving a semiconductor light emitting chip.

Abstract: Disclosed is a semiconductor light emitting device including: multiple semiconductor layers including a first semiconductor layer, a second semiconductor layer, and an active layer; an electrode electrically connected with the multiple semiconductor layers; a light absorption barrier disposed about at least the electrode; and a non-conductive reflective film adapted to cover the multiple semiconductor layers, the light absorption barrier and the electrode and to reflect light from the active layer, wherein the non-conductive reflective film has an abnormal region of a lower reflectivity around the electrode due to a height difference between the light absorption barrier and the electrode, wherein a portion of the non-conductive reflective film exposed from the electrode is made longer than the abnormal region as seen in a cross-sectional view of the electrode.

Abstract: Disclosed is a semiconductor light emitting device, including: a body, which has a bottom part with at least one hole formed therein, a side wall, and a cavity defined by the bottom part and the side wall; a semiconductor light emitting chip, which is placed in each hole and includes plural semiconductor layers adapted to generate light by electron-hole recombination and electrodes electrically connected to the plural semiconductor layers; and an encapsulating member provided at least to the cavity to cover the semiconductor light emitting chip, in which the electrodes of the semiconductor light emitting chip are exposed towards the lower face of the bottom part of the body.

Abstract: The present disclosure relates to a semiconductor light emitting device, comprising: a plurality of semiconductor layers, including an active layer, generating light via electron-hole recombination; a first electrode; a non-conductive distributed bragg reflector coupled to the plurality of semiconductor layers, reflecting the light from the active layer; and a first light-transmitting film coupled to the distributed bragg reflector from a side opposite to the plurality of semiconductor layers with respect to the non-conductive distributed bragg reflector, with the first light-transmitting film having a refractive index lower than an effective refractive index of the distributed bragg reflector.

Abstract: Disclosed is a semiconductor light emitting device including: a plurality of semiconductor layers; and a first electrode which is formed on an exposed region of the first semiconductor layer created by mesa etching portions of the second semiconductor layer, the active layer and the first semiconductor layer, and includes a contact layer in contact with the first semiconductor layer, a reflective layer formed on the contact layer, while facing an exposed region of the active layer created by mesa etching and reflecting light, and an anti-rupture layer formed on the reflective layer.