Patents by Inventor Soon-bum Kim
Soon-bum Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20190181067Abstract: A semiconductor package includes a semiconductor substrate, a first conductive pattern on the semiconductor substrate, a top surface of the first conductive pattern including a first inclined surface and a second inclined surface that are inclined with respect to a top surface of the semiconductor substrate, and a distance between the first and second inclined surfaces decreasing away from the top surface of the semiconductor substrate, a second conductive pattern extending along the top surface of the first conductive pattern; and a solder ball disposed on the second conductive pattern.Type: ApplicationFiled: June 6, 2018Publication date: June 13, 2019Inventor: Soon Bum KIM
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Patent number: 9646945Abstract: Provided is a semiconductor device having a high-reliability solder joint. The semiconductor device includes a high-temperature solder formed on a conductive pad. A low-temperature solder having a lower melting point than the high-temperature solder is formed on the high-temperature solder. A barrier layer is formed between the high-temperature solder and the low-temperature solder. An Sn content of the high-temperature solder is higher than that of the low-temperature solder.Type: GrantFiled: April 14, 2015Date of Patent: May 9, 2017Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Soon-Bum Kim, Tae-Eun Kim, Eun-Hye Park
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Publication number: 20160027751Abstract: Provided is a semiconductor device having a high-reliability solder joint. The semiconductor device includes a high-temperature solder formed on a conductive pad. A low-temperature solder having a lower melting point than the high-temperature solder is formed on the high-temperature solder. A barrier layer is formed between the high-temperature solder and the low-temperature solder. An Sn content of the high-temperature solder is higher than that of the low-temperature solder.Type: ApplicationFiled: April 14, 2015Publication date: January 28, 2016Inventors: Soon-Bum KIM, Tae-Eun KIM, Eun-Hye PARK
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Patent number: 7855144Abstract: Provided is a method of forming conductors (e.g., metal lines and/or bumps) for semiconductor devices and conductors formed from the same. First and second seed metal layers may be formed. At least one mask may be formed on a portion on which a conductor is to be formed. An exposed portion may be oxidized. The oxidized portion may be removed. A conductive structure may be formed on an upper surface of a portion which is not oxidized. The conductors may be metal lines and/or bumps. The conductive structures may be solder balls.Type: GrantFiled: October 31, 2006Date of Patent: December 21, 2010Assignee: Samsung Electronics Co., Ltd.Inventors: Soon-bum Kim, Sung-min Sim, Dong-hyeon Jang, Jae-sik Chung, Se-yong Oh
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Patent number: 7732319Abstract: An interconnection structure includes an integrated circuit (IC) chip having internal circuitry and a terminal to electrically connect the internal circuitry to an external circuit, a passivation layer disposed on a top surface of the IC chip, the passivation layer configured to protect the internal circuitry and to expose the terminal, an input/output (I/O) pad, where the I/O pad includes a first portion in contact with the terminal and a second portion that extends over the passivation layer, and an electroless plating layer disposed on the I/O pad.Type: GrantFiled: October 19, 2007Date of Patent: June 8, 2010Assignee: Samsung Electronics Co., Ltd.Inventors: Se-Young Jeong, Sung-Min Sim, Soon-Bum Kim, In-Young Lee, Young-Hee Song
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Patent number: 7524763Abstract: A method of fabricating wafer level chip scale packages may involve forming a hole to penetrate through a chip pad of an IC chip. A base metal layer may be formed on a first face of a wafer to cover inner surfaces of the hole. An electrode metal layer may fill the hole and rise over the chip pad. A second face of the wafer may be grinded such that the electrode metal layer in the hole may be exposed through the second face. By electroplating, a plated bump may be formed on the electrode metal layer exposed through the second face. The base metal layer may be selectively removed to isolate adjacent electrode metal layers. The wafer may be sawed along scribe lanes to separate individual packages from the wafer.Type: GrantFiled: June 7, 2005Date of Patent: April 28, 2009Assignee: Samsung Electronics Co., Ltd.Inventors: Soon-Bum Kim, Ung-Kwang Kim, Keum-Hee Ma, Young-Hee Song, Sung-Min Sim, Se-Yong Oh, Kang-Wook Lee, Se-Young Jeong
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Publication number: 20080076248Abstract: Provided is a method of forming conductors (e.g., metal lines and/or bumps) for semiconductor devices and conductors formed from the same. First and second seed metal layers may be formed. At least one mask may be formed on a portion on which a conductor is to be formed. An exposed portion may be oxidized. The oxidized portion may be removed. A conductive structure may be formed on an upper surface of a portion which is not oxidized. The conductors may be metal lines and/or bumps. The conductive structures may be solder balls.Type: ApplicationFiled: October 31, 2006Publication date: March 27, 2008Inventors: Soon-bum Kim, Sung-min Sim, Dong-hyeon Jang, Jae-sik Chung, Se-yong Oh
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Publication number: 20080036081Abstract: An interconnection structure includes an integrated circuit (IC) chip having internal circuitry and a terminal to electrically connect the internal circuitry to an external circuit, a passivation layer disposed on a top surface of the IC chip, the passivation layer configured to protect the internal circuitry and to expose the terminal, an input/output (I/O) pad, where the I/O pad includes a first portion in contact with the terminal and a second portion that extends over the passivation layer, and an electroless plating layer disposed on the I/O pad.Type: ApplicationFiled: October 19, 2007Publication date: February 14, 2008Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Se-Young JEONG, Sung-Min SIM, Soon-Bum KIM, In-Young LEE, Young-Hee SONG
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Patent number: 7307342Abstract: An interconnection structure includes an integrated circuit (IC) chip having internal circuitry and a terminal to electrically connect the internal circuitry to an external circuit, a passivation layer disposed on a top surface of the IC chip, the passivation layer configured to protect the internal circuitry and to expose the terminal, an input/output (I/O) pad, where the I/O pad includes a first portion in contact with the terminal and a second portion that extends over the passivation layer, and an electroless plating layer disposed on the I/O pad.Type: GrantFiled: August 1, 2005Date of Patent: December 11, 2007Assignee: Samsung Electronics Co., Ltd.Inventors: Se-Young Jeong, Sung-Min Sim, Soon-Bum Kim, In-Young Lee, Young-Hee Song
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Patent number: 7271084Abstract: A reinforced solder bump connector structure is formed between a contact pad arranged on a semiconductor chip and a ball pad arranged on a mounting substrate. The semiconductor chip includes at least one reinforcing protrusion extending upwardly from a surface of an intermediate layer. The mounting substrate includes at least one reinforcing protrusion extending upwardly from a ball pad, the protrusions from both the chip and the substrate being embedded within the solder bump connector. In some configurations, the reinforcing protrusions from the contact pad and the ball pad are sized and arranged to have overlapping upper portions. These overlapping portions may assume a wide variety of configurations that allow the protrusions to overlap without contacting each other including pin arrays and combinations of surrounding and surrounded elements. In each configuration, the reinforcing protrusions will tend to suppress crack formation and/or crack propagation thereby improving reliability.Type: GrantFiled: January 12, 2006Date of Patent: September 18, 2007Assignee: Samsung Electronics Co., Ltd.Inventors: Se-young Jeong, Nam-seog Kim, Oh-se Yong, Soon-bum Kim, Sun-young Park, Ju-hyun Lyu, In-young Lee
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Publication number: 20070200251Abstract: Provided is a method of fabricating an ultra thin flip-chip package. In the above method, an under barrier metal film is formed on a bond pad of a semiconductor chip. Three-dimensional structured solder bumps are formed on the under barrier metal film. each of the solder bumps including a bar portion and a ball portion disposed at an end of the bar portion. The semiconductor chip including the three-dimensional structured solder bumps is bonded to a solder layer on a printed circuit board to complete a flip-chip package. According to the present invention, by employing the three-dimensional structured solder bumps, it is possible to lower the height of the solder bumps, thereby improving the reliability of an ultra thin flip-chip package.Type: ApplicationFiled: March 26, 2007Publication date: August 30, 2007Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Soon-Bum KIM, Se-Young JEONG, Se-Yong OH, Nam-Seog KIM
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Publication number: 20070200216Abstract: Provided is a chip stack package that may include a lower semiconductor chip, an upper semiconductor chip stacked on the lower semiconductor chip, and at least one adhesive formed in space between the lower semiconductor chip and the upper semiconductor chip. The at least one adhesive may include a first adhesive and a second adhesive. The first adhesive may be formed in a portion of the space, and the second adhesive may be formed in the space except for a region in which the first adhesive is provided. The space between adjacent semiconductor chips may be completely filled with the at least one adhesive. Therefore, a chip stack package according to the exemplary embodiments of the present invention may exhibit improved mechanical stability and reliability.Type: ApplicationFiled: December 19, 2006Publication date: August 30, 2007Inventors: Soon-Bum Kim, Ung-Kwang Kim, Kang-Wook Lee, Se-Young Jeong, Young-Hee Song, Sung-Min Sim
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Patent number: 7214604Abstract: Provided is a method of fabricating an ultra thin flip-chip package. In the above method, an under barrier metal film is formed on a bond pad of a semiconductor chip. Three-dimensional structured solder bumps are formed on the under barrier metal film, each of the solder bumps including a bar portion and a ball portion disposed at an end of the bar portion. The semiconductor chip including the three-dimensional structured solder bumps is bonded to a solder layer on a printed circuit board to complete a flip-chip package. According to the present invention, by employing the three-dimensional structured solder bumps, it is possible to lower the height of the solder bumps, thereby improving the reliability of an ultra thin flip-chip package.Type: GrantFiled: October 25, 2004Date of Patent: May 8, 2007Assignee: Samsung Electronics Co., Ltd.Inventors: Soon-Bum Kim, Se-Young Jeong, Se-Yong Oh, Nam-Seog Kim
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Patent number: 7151009Abstract: Provided is a method for manufacturing WLCSP devices that includes preparing at least two wafers, each wafer having a plurality of corresponding semiconductor chips, each semiconductor chip having through electrodes formed in the peripheral surface region, forming or applying a solid adhesive region to a central surface region, stacking a plurality of wafers and attaching corresponding chips provided on adjacent wafers with the solid adhesive region and connecting corresponding through electrodes of adjacent semiconductor chips, dividing the stacked wafers into individual chip stack packages, and injecting a liquid adhesive into a space remaining between adjacent semiconductor chips incorporated in the resulting chip stack package. By reducing the likelihood of void regions between adjacent semiconductor chips, it is expected that a method according to the exemplary embodiments of the present invention exhibit improved mechanical stability and reliability.Type: GrantFiled: January 21, 2005Date of Patent: December 19, 2006Assignee: Samsung Electronics Co., Ltd.Inventors: Soon-Bum Kim, Ung-Kwang Kim, Kang-Wook Lee, Se-Young Jeong, Young-Hee Song, Sung-min Sim
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Publication number: 20060113681Abstract: A reinforced solder bump connector structure is formed between a contact pad arranged on a semiconductor chip and a ball pad arranged on a mounting substrate. The semiconductor chip includes at least one reinforcing protrusion extending upwardly from a surface of an intermediate layer. The mounting substrate includes at least one reinforcing protrusion extending upwardly from a ball pad, the protrusions from both the chip and the substrate being embedded within the solder bump connector. In some configurations, the reinforcing protrusions from the contact pad and the ball pad are sized and arranged to have overlapping upper portions. These overlapping portions may assume a wide variety of configurations that allow the protrusions to overlap without contacting each other including pin arrays and combinations of surrounding and surrounded elements. In each configuration, the reinforcing protrusions will tend to suppress crack formation and/or crack propagation thereby improving reliability.Type: ApplicationFiled: January 12, 2006Publication date: June 1, 2006Inventors: Se-young Jeong, Nam-seog Kim, Oh-se Yong, Soon-bum Kim, Sun-young Park, Ju-hyun Lyu, In-young Lee
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Publication number: 20060060970Abstract: An interconnection structure includes an integrated circuit (IC) chip having internal circuitry and a terminal to electrically connect the internal circuitry to an external circuit, a passivation layer disposed on a top surface of the IC chip, the passivation layer configured to protect the internal circuitry and to expose the terminal, an input/output (I/O) pad, where the I/O pad includes a first portion in contact with the terminal and a second portion that extends over the passivation layer, and an electroless plating layer disposed on the I/O pad.Type: ApplicationFiled: August 1, 2005Publication date: March 23, 2006Applicant: Samsung Electronics Co., Ltd.Inventors: Se-Young Jeong, Sung-Min Sim, Soon-Bum Kim, In-Young Lee, Young-Hee Song
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Patent number: 7015590Abstract: A reinforced solder bump connector structure is formed between a contact pad arranged on a semiconductor chip and a ball pad arranged on a mounting substrate. The semiconductor chip includes at least one reinforcing protrusion extending upwardly from a surface of an intermediate layer. The mounting substrate includes at least one reinforcing protrusion extending upwardly from a ball pad, the protrusions from both the chip and the substrate being embedded within the solder bump connector. In some configurations, the reinforcing protrusion from the contact pad and the ball pad are sized and arranged to have overlapping under portions. These overlapping portions may assume a wide variety of configurations that allow the protrusions to overlap without contacting each other including pin arrays and combinations of surrounding and surrounded elements. In each configuration, the reinforcing protrusions will tend to suppress crack formation and/or crack propagation thereby improving reliability.Type: GrantFiled: April 16, 2004Date of Patent: March 21, 2006Assignee: Samsung Electronics Co., Ltd.Inventors: Se-young Jeong, Nam-seog Kim, Oh-se Yong, Soon-bum Kim, Sun-young Park, Ju-hyun Lyu, In-young Lee
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Publication number: 20050280160Abstract: Provided is a method for manufacturing WLCSP devices that includes preparing at least two wafers, each wafer having a plurality of corresponding semiconductor chips, each semiconductor chip having through electrodes formed in the peripheral surface region, forming or applying a solid adhesive region to a central surface region, stacking a plurality of wafers and attaching corresponding chips provided on adjacent wafers with the solid adhesive region and connecting corresponding through electrodes of adjacent semiconductor chips, dividing the stacked wafers into individual chip stack packages, and injecting a liquid adhesive into a space remaining between adjacent semiconductor chips incorporated in the resulting chip stack package. By reducing the likelihood of void regions between adjacent semiconductor chips, it is expected that a method according to the exemplary embodiments of the present invention exhibit improved mechanical stability and reliability.Type: ApplicationFiled: January 21, 2005Publication date: December 22, 2005Inventors: Soon-Bum Kim, Ung-Kwang Kim, Kang-Wook Lee, Se-Young Jeong, Young-Hee Song, Sung-Min Sim
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Publication number: 20050277293Abstract: A method of fabricating wafer level chip scale packages may involve forming a hole to penetrate through a chip pad of an IC chip. A base metal layer may be formed on a first face of a wafer to cover inner surfaces of the hole. An electrode metal layer may fill the hole and rise over the chip pad. A second face of the wafer may be grinded such that the electrode metal layer in the hole may be exposed through the second face. By electroplating, a plated bump may be formed on the electrode metal layer exposed through the second face. The base metal layer may be selectively removed to isolate adjacent electrode metal layers. The wafer may be sawed along scribe lanes to separate individual packages from the wafer.Type: ApplicationFiled: June 7, 2005Publication date: December 15, 2005Inventors: Soon-Bum Kim, Ung-Kwang Kim, Keum-Hee Ma, Young-Hee Song, Sung-Min Sim, Se-Yong Oh, Kang-Wook Lee, Se-Young Jeong
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Publication number: 20050104222Abstract: A flip chip device may have a semiconductor chip with an active surface on which chip pads and a protective layer may be provided. Solder bumps may be provided on the active surface and electrically connected to the chip pads. And a solder bar may be provided on a portion of the protective layer. The solder bar may disperse thermal stress produced in the solder bumps. A metal core may be embedded within the solder bar. The flip chip device may be mounted on and flip-chip bonded to a substrate. The substrate may have land pads to which the solder bumps and the solder bar may be mechanically joined. The solder bar increases a joint area between the flip chip device and the substrate and reinforces solder connections therebetween.Type: ApplicationFiled: September 20, 2004Publication date: May 19, 2005Inventors: Se-Young Jeong, Gu-Sung Kim, Nam-Seog Kim, Gi-Hwan Park, Se-Yong Oh, Soon-Bum Kim, In-Young Lee