Abstract: In a general aspect, a chip-on-lead semiconductor device package can include a leadframe having a plurality of signal leads. The plurality of signal leads can include at least two signal leads each having a first face with a first surface area and, opposite the first face, a second face with a second surface area, the second faces of the at least two signal leads being exposed on a surface of the chip-on-lead device package. The plurality of signal lead can also include at least one signal lead having a first face with a third surface area and, opposite the first face of the at least one signal lead, a second face with the second surface area, the second face of the at least one signal lead being exposed on the surface of the chip-on-lead semiconductor device package.

Abstract: In a general aspect, a multi-chip semiconductor device package assembly can include a leadframe having a first die pad and a second die pad. The assembly can further include a first semiconductor die coupled to the first die pad and a second semiconductor die coupled to the second die pad. The assembly can also include a blank having a first portion coupled to the first die pad and a second portion coupled to the second die pad, such that the blank forms a bridge between the first die pad and the second die pad.

Abstract: A multi-chip module (MCM) includes a molded body portion having a first outer surface and a second outer surface. A conductive layer defines at least a portion of the first outer surface A conductive connection layer portion is disposed outside of the second outer surface of the molded body portion. A first semiconductor die and a second semiconductor die are disposed between the conductive layer and the conductive connection layer, and first molding portion is disposed between the first semiconductor die and the second semiconductor die. The first molding portion extends between the first outer surface and the second outer surface of the molded body portion. A conductive pillar is electrically coupled to the conductive layer defining at least a portion of the first outer surface and the conductive connection layer portion disposed outside of the second outer surface.

Abstract: In a general aspect, a multi-chip semiconductor device package assembly can include a leadframe having a first die pad and a second die pad. The assembly can further include a first semiconductor die coupled to the first die pad and a second semiconductor die coupled to the second die pad. The assembly can also include a blank having a first portion coupled to the first die pad and a second portion coupled to the second die pad, such that the blank forms a bridge between the first die pad and the second die pad.

Abstract: A method for fabricating a chip scale package, comprising: providing a wafer; applying a polymer resin on at least part of a first surface of the wafer and to one or more sides of the wafer; and applying a compression mold on at least part of a second surface of the wafer and to one or more sides of the wafer, said first and second surfaces opposing each other.

Abstract: A method for fabricating a chip scale package, comprising: providing a wafer; applying a polymer resin on at least part of a first surface of the wafer and to one or more sides of the wafer; and applying a compression mold on at least part of a second surface of the wafer and to one or more sides of the wafer, said first and second surfaces opposing each other.

Abstract: A leadframe includes a frame, a die pad, a contact including a flank adjacent to the frame, a first tie bar between the frame and die pad, and a second tie bar between the die pad and contact. The leadframe is disposed over a carrier. A semiconductor die is disposed over the die pad. An encapsulant is deposited over the leadframe and semiconductor die including between the carrier and half-etched portions of the leadframe. A first trench is formed in the encapsulant to remove a portion of the frame and expose the flank of the contact. A conductive layer is formed over the flank by electroplating. A second trench is formed in the encapsulant through the second tie bar after forming the conductive layer.

Abstract: Implementations of semiconductor packages may include a die including a first side and a second side opposing the first side, the second side of the die coupled to a layer, a first end of a plurality of wires each bonded to the first side of the die, a mold compound encapsulating the die and the plurality of wires, and a second end of the plurality of wires each directly bonded to one of a plurality of bumps, wherein a surface of the layer is exposed through the mold compound.

Abstract: Implementations of semiconductor packages may include a die including a first side and a second side opposing the first side, the second side of the die coupled to a layer, a first end of a plurality of wires each bonded to the first side of the die, a mold compound encapsulating the die and the plurality of wires, and a second end of the plurality of wires each directly bonded to one of a plurality of bumps, wherein a surface of the layer is exposed through the mold compound.

Abstract: In a general aspect, an apparatus can include a metal layer, a first semiconductor die, a second semiconductor die, a molding compound, a first electrical contact and a second electrical contact. The first semiconductor die can have a first side disposed on the metal layer. The second semiconductor die can have a first side disposed on the metal layer. The metal layer can electrically couple the first side of the first semiconductor die with the first side of the second semiconductor die. The molding compound can at least partially encapsulate the metal layer, the first semiconductor die and the second semiconductor die. The first electrical contact can be to a second side of the first semiconductor die and disposed on a surface of the apparatus. The second electrical contact can be to a second side of the second semiconductor die and disposed on the surface of the apparatus.

Abstract: A leadframe includes a frame, a die pad, a contact including a flank adjacent to the frame, a first tie bar between the frame and die pad, and a second tie bar between the die pad and contact. The leadframe is disposed over a carrier. A semiconductor die is disposed over the die pad. An encapsulant is deposited over the leadframe and semiconductor die including between the carrier and half-etched portions of the leadframe. A first trench is formed in the encapsulant to remove a portion of the frame and expose the flank of the contact. A conductive layer is formed over the flank by electroplating. A second trench is formed in the encapsulant through the second tie bar after forming the conductive layer.

Abstract: Implementations of semiconductor packages may include a die including a first side and a second side opposing the first side, the second side of the die coupled to a layer, a first end of a plurality of wires each bonded to the first side of the die, a mold compound encapsulating the die and the plurality of wires, and a second end of the plurality of wires each directly bonded to one of a plurality of bumps, wherein a surface of the layer is exposed through the mold compound.

Abstract: Implementations of semiconductor packages may include: a lead frame having at least one corner lead, the at least one corner lead positioned where two edges of the package meet, and the at least one lead having a half etch on a first portion of the lead and a half etch on a second portion of the lead. The first portion may extend internally into the package to create a mechanical mold compound lock between a mold compound of the package and the lead. The second portion may be located on at least one of the two edges of the package.

Abstract: A method for fabricating a chip scale package, comprising: providing a wafer; applying a polymer resin on at least part of a first surface of the wafer and to one or more sides of the wafer; and applying a compression mold on at least part of a second surface of the wafer and to one or more sides of the wafer, said first and second surfaces opposing each other.

Abstract: A chip package, in some embodiments, comprises: a die flag; one or more die supports; and a die mounted on the die flag and on said one or more die supports, at least one surface of said die having an area larger than an area of at least one surface of the die flag.

Abstract: A leadframe includes a frame, a die pad, a contact including a flank adjacent to the frame, a first tie bar between the frame and die pad, and a second tie bar between the die pad and contact. The leadframe is disposed over a carrier. A semiconductor die is disposed over the die pad. An encapsulant is deposited over the leadframe and semiconductor die including between the carrier and half-etched portions of the leadframe. A first trench is formed in the encapsulant to remove a portion of the frame and expose the flank of the contact. A conductive layer is formed over the flank by electroplating. A second trench is formed in the encapsulant through the second tie bar after forming the conductive layer.

Abstract: A semiconductor device has a semiconductor die containing a base material having an active surface and a back surface opposite the active surface. A portion of the base material is removed by plasma etching to form an alignment recess in the base material. Alternatively, an alignment protrusion is formed over the base material. The alignment recess or alignment protrusion make a non-uniform surface. The semiconductor die is disposed over a substrate with a portion of the substrate, such as a die pad, positioned within the alignment recess. The die pad may be disposed partially or completely within the alignment recess of the base material. The base material may extend beyond the die pad, or the alignment recess or alignment protrusion may extend a length of the base material. A metal layer can be formed in the alignment recess of the base material.

Abstract: A chip scale package (CSP) includes a die and a first lead mechanically and electrically coupled to a first surface of the die at a first surface of the first lead. The first surface of the first lead forms a first plane. A second lead is mechanically coupled to a second surface of the die at a first surface of the second lead. The first surface of the second lead forms a second plane. A mold compound at least partially encapsulates the die, forming a CSP. The first plane and the second plane are oriented substantially perpendicularly to a third plane formed by a motherboard surface when the CSP is coupled to the motherboard surface. The CSP includes no wirebonds and the first lead and second lead are on opposing surfaces of the CSP. The third plane of the motherboard may be a largest planar surface of the motherboard.

Abstract: A semiconductor component and a method for manufacturing the semiconductor component, wherein the semiconductor component includes stacked semiconductor die. In accordance with embodiments, the semiconductor component includes a substrate having a component receiving area and a plurality of bond pads. A semiconductor chip is attached to the component receiving area. An electrical connector is coupled to the semiconductor chip and the substrate. A second semiconductor chip is mounted or attached to one of the ends of the electrical connector such that this end is positioned between the semiconductor chips. A second electrical connector is coupled between the second semiconductor chip and the substrate. A third semiconductor chip is mounted over or attached to the second electrical connector such that a portion is between the second and third semiconductor chips.

Abstract: A connector assembly and a method for manufacturing the connector assembly. In accordance with embodiments, the connector assembly includes an electrical connector having first and second surfaces and first and second ends. A layer of electrically insulating material is formed from or on a portion of the first surface at the first end. Optionally, a layer of electrically insulating material can be formed from or on the second surface.