Patents by Inventor Srinivas Gandikota
Srinivas Gandikota has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12288717Abstract: A method of forming an electronic device is disclosed. The method comprises forming depositing a metal on a substrate, the metal comprising one or more of copper (Cu), titanium (Ti), or tantalum (Ta). A metal cap is deposited on the metal. The metal cap comprises one or more of molybdenum (Mo), ruthenium (Ru), iridium (Ir), rhodium (Rh), palladium (Pd), silver (Ag), osmium (Os), platinum (Pt), or gold (Au). The substrate is then exposed to an anneal process, e.g., a hydrogen high-pressure anneal. The formation of the metal cap on the metal minimizes parasitic adsorption of hydrogen by the underlying metal.Type: GrantFiled: February 20, 2024Date of Patent: April 29, 2025Assignee: Applied Materials, Inc.Inventors: Srinivas Gandikota, Steven C. H. Hung, Srinivas D. Nemani, Yixiong Yang, Susmit Singha Roy, Nikolaos Bekiaris
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Publication number: 20250126867Abstract: Methods of scaling the thickness of the interfacial layer in electronic devices, such as NMOS transistors and PMOS transistors are described. Some embodiments provide a metal film or a metal nitride film that reduces the thickness of the interfacial layer by scavenging unbound oxygen from the interfacial layer (e.g., silicon oxide (SiOx)) and the high-? dielectric layer (e.g., hafnium oxide (HfOx)). Some embodiments advantageously include annealing the semiconductor substrate to promote or accelerate the scavenging.Type: ApplicationFiled: October 13, 2023Publication date: April 17, 2025Applicant: Applied Materials, Inc.Inventors: Srinivas Gandikota, Yixiong Yang, Seshadri Ganguli, Geetika Bajaj, Debaditya Chatterjee, Hsin-Jung Yu, Tuerxun Ailihumaer, Tengzhou Ma, Lin Sun
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Publication number: 20250081593Abstract: Methods of manufacturing electronic devices, such as transistors (negative metal-oxide-semiconductor (NMOS) transistors (e.g., an N-metal stack) and positive metal-oxide-semiconductor (PMOS) transistors (e.g., a P-metal stack)) are described. Embodiments of the disclosure are directed to methods of improving PMOS transistor performance by inhibiting N-metal layer growth. The present disclosure provides two types of processes to reduce or inhibit N-metal layer growth. The disclosure provides methods which include forming a self-assembled monolayer (SAM) on the metal surface (e.g., titanium nitride (TiN)) of the PMOS, and methods which include forming a silicon-containing layer such as silicon oxide (SiOx) on the TiN surface. These two types of processes significantly reduce or inhibit the subsequent growth of an N-metal layer, such as titanium aluminum carbide (TiAlC), on the TiN surface of the PMOS.Type: ApplicationFiled: September 1, 2023Publication date: March 6, 2025Applicant: Applied Materials ,IncInventors: Yongjing Lin, Zhihui Liu, Sourav Garg, Lu Li, Haoming Yan, Haoyan Sha, Bhaskar Jyoti Bhuyan, Shih Chung Chen, Janardhan Devrajan, Srinivas Gandikota
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Patent number: 12230688Abstract: A metal gate stack on a substrate comprises: an interfacial layer on the substrate; a high-? metal oxide layer on the interfacial layer, the high-? metal oxide layer comprising a dipole region adjacent to the interfacial layer, the dipole region comprising niobium (Nb); a high-? metal oxide capping layer on the high-? metal oxide layer; a positive metal-oxide-semiconductor (PMOS) work function material above the high-? metal oxide capping layer; and a gate electrode above the PMOS work function material. The dipole region is formed by driving Nb species of a Nb-based film into the high-? metal oxide layer to form a dipole region.Type: GrantFiled: February 8, 2022Date of Patent: February 18, 2025Assignee: Applied Materials, Inc.Inventors: Yong Yang, Srinivas Gandikota, Steven C. H. Hung, Mandyam Sriram, Jacqueline S. Wrench, Yixiong Yang
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Publication number: 20250048683Abstract: Embodiments of the disclosure provide methods of manufacturing electronic devices that meet compressive stress requirements for PMOS transistors and tensile stress requirements for NMOS transistors. Each P-metal stack and P-metal stack: is formed on a top surface of a channel located between a source and a drain on a semiconductor substrate, and comprises nanosheet channel layers and trenches between each nanosheet channel layer, and has at least one side defining a gate trench. Some embodiments include forming a work function layer in the channel and inducing a work function layer strain in the channel. Some embodiments include forming a gate metal fill layer on each of the P-metal stack and the N-metal stack and inducing a gate metal fill layer strain in the channel. The gate metal fill layer covers the at least one side of each of the P-metal stack and the N-metal stack and fills the gate trench.Type: ApplicationFiled: July 30, 2024Publication date: February 6, 2025Applicant: Applied Materials, Inc.Inventors: Srinivas Gandikota, Yogesh Sharma, Tuerxun Ailihumaer, Yixiong Yang
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Publication number: 20250006499Abstract: Methods of manufacturing and processing semiconductor devices (i.e., electronic devices) are described. Embodiments of the disclosure advantageously provide electronic devices which comprise an integrated dipole region to meet reduced thickness and lower thermal budget requirements. The electronic devices described herein comprise a source region, a drain region, and a channel separating the source region and the drain region, and a dipole region having an interfacial layer, a metal film substantially free of non-metal atoms on the interfacial layer, and a high-? dielectric layer on the metal film. In some embodiments, the dipole region of the electronic devices comprises an interfacial layer, a high-? dielectric layer on the interfacial layer, and a metal film on the high-? dielectric layer. In some embodiments, the methods comprise annealing the substrate to drive particles of metal from the metal film into one or more of the interfacial layer or the high-? dielectric layer.Type: ApplicationFiled: September 4, 2024Publication date: January 2, 2025Applicant: Applied Materials, Inc.Inventors: Srinivas Gandikota, Yixiong Yang, Steven C.H. Hung, Tianyi Huang, Seshadri Ganguli
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Patent number: 12183798Abstract: A method of forming a gate stack structure includes forming a dipole metal layer on a high-? gate dielectric layer on a semiconductor structure formed on a substrate, annealing the dipole metal layer, and removing the dipole metal layer. The dipole metal layer comprises dopants in the high-? gate dielectric layer.Type: GrantFiled: November 17, 2021Date of Patent: December 31, 2024Assignee: Applied Materials, Inc.Inventors: Steven C. H. Hung, Benjamin Colombeau, Myungsun Kim, Srinivas Gandikota, Yixiong Yang, Jacqueline Samantha Wrench, Yong Yang
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Publication number: 20240371613Abstract: Semiconductor manufacturing processing chambers having an RF isolator between the support ring and the showerhead and/or an RF gasket between the showerhead and the gas funnel are described. A cap insert with a cap housing around the cap insert is on the gas funnel and an RF feed is in contact with the showerhead. A substrate support can be included and may have an RF return path directed through the substrate support.Type: ApplicationFiled: May 3, 2024Publication date: November 7, 2024Applicant: Applied Materials, Inc.Inventors: Muhannad Mustafa, Janisht Golcha, Sanjeev Baluja, Srinivas Gandikota, Yixiong Yang
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Publication number: 20240360557Abstract: Methods for depositing metal films using a metal halide and metal organic precursors are described. The substrate is exposed to a first metal precursor and a second metal precursor to form the metal film. The exposures can be sequential or simultaneous. The metal films are relatively pure with a low carbon content.Type: ApplicationFiled: April 25, 2023Publication date: October 31, 2024Applicant: Applied Materials, Inc.Inventors: Srinivas Gandikota, Yixiong Yang, Tianyi Huang, Geetika Bajaj, Hsin-Jung Yu, Tengzhou Ma, Seshadri Ganguli, Tuerxun Ailihumaer, Yogesh Sharma, Debaditya Chatterjee
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Publication number: 20240363723Abstract: Methods of manufacturing electronic devices are described. Embodiments of the present disclosure advantageously provide methods of manufacturing electronic devices that meet reduced thickness, reduced leakage, lower thermal budget, and Vt requirements (including multi-Vt), and have improved device performance and reliability. The method comprises forming a P-dipole stack and an N-dipole stack on a semiconductor substrate by: depositing an interfacial layer (e.g., silicon oxide (SiOx)) on the top surface of the channel; depositing a hafnium-containing layer comprising hafnium oxide (HfOx) and having a thickness of less than or equal to 5 ? on the interfacial layer; and depositing a dipole layer comprising lanthanum nitride (LaN) on the hafnium-containing layer.Type: ApplicationFiled: April 28, 2023Publication date: October 31, 2024Applicant: Applied Materials, Inc.Inventors: Srinivas Gandikota, Tengzhou Ma, Geetika Bajaj, Debaditya Chatterjee, Hsin-Jung Yu, Pei Hsuan Lin, Yixiong Yang
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Patent number: 12114488Abstract: Methods of forming memory devices are described. A molybdenum silicide nucleation layer is formed, and the substrate is soaked in a titanium precursor prior to a bulk molybdenum gap fill process. In other embodiments, a molybdenum silicide film is formed in a first process cycle and a second process cycle is performed where the substrate is exposed to a titanium precursor. In further embodiments, a substrate having at least one feature thereon is exposed to a first titanium precursor and a nitrogen-containing reactant. The substrate is then soaked in a second titanium precursor, and then is exposed to a first molybdenum precursor followed by exposure to a silane to form a molybdenum silicide layer on a surface of the substrate.Type: GrantFiled: May 5, 2021Date of Patent: October 8, 2024Assignee: Applied Materials, Inc.Inventors: Yong Yang, Kunal Bhatnagar, Srinivas Gandikota, Seshadri Ganguli, Jose Alexandro Romero, Mandyam Sriram, Mohith Verghese, Jacqueline S. Wrench, Yixiong Yang
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Patent number: 12112951Abstract: Methods of manufacturing and processing semiconductor devices (i.e., electronic devices) are described. Embodiments of the disclosure advantageously provide electronic devices which comprise an integrated dipole region to meet reduced thickness and lower thermal budget requirements. The electronic devices described herein comprise a source region, a drain region, and a channel separating the source region and the drain region, and a dipole region having an interfacial layer, a metal film substantially free of non-metal atoms on the interfacial layer, and a high-? dielectric layer on the metal film. In some embodiments, the dipole region of the electronic devices comprises an interfacial layer, a high-? dielectric layer on the interfacial layer, and a metal film on the high-? dielectric layer. In some embodiments, the methods comprise annealing the substrate to drive particles of metal from the metal film into one or more of the interfacial layer or the high-? dielectric layer.Type: GrantFiled: February 17, 2022Date of Patent: October 8, 2024Assignee: Applied Materials, Inc.Inventors: Srinivas Gandikota, Yixiong Yang, Steven C. H. Hung, Tianyi Huang, Seshadri Ganguli
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Publication number: 20240332008Abstract: Methods of manufacturing and processing semiconductor devices (i.e., electronic devices) are described. Embodiments of the disclosure advantageously provide electronic devices which meet reduced thickness, lower thermal budget, and Vt requirements, and have improved device performance and reliability. The electronic devices described herein comprise a source region, a drain region, and a channel separating the source region and the drain region, an interfacial layer on a top surface of the channel, a high-? dielectric layer on the interfacial layer, a dipole layer on the high-? dielectric layer, and a capping layer on the dipole layer. In some embodiments, the dipole layer comprises a metal oxynitride (MON), such as aluminum oxynitride (AlON). In some embodiments, the methods comprise annealing the substrate to drive atoms from the dipole layer into one or more of the interfacial layer or the high-? dielectric layer.Type: ApplicationFiled: March 27, 2023Publication date: October 3, 2024Applicant: Applied Materials, Inc.Inventors: Geetika Bajaj, Tianyi Huang, Hsin-Jung Yu, Yixiong Yang, Srinivas Gandikota, Chi-Chou Lin, Pei Hsuan Lin
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Patent number: 12104243Abstract: Methods and apparatus for processing a substrate is provided herein. For example, a method for processing a substrate comprises depositing a silicide layer within a feature defined in a layer on a substrate, forming one of a metal liner layer or a metal seed layer atop the silicide layer within the feature via depositing at least one of molybdenum (Mo) or tungsten (W) using physical vapor deposition, and depositing Mo using at least one of chemical vapor deposition or atomic layer deposition atop the at least one of the metal liner layer or the metal seed layer, without vacuum break.Type: GrantFiled: June 16, 2021Date of Patent: October 1, 2024Assignee: APPLIED MATERIALS, INC.Inventors: Annamalai Lakshmanan, Jacqueline S. Wrench, Feihu Wang, Yixiong Yang, Joung Joo Lee, Srinivas Gandikota, Sang-heum Kim, Zhebo Chen, Gang Shen
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Patent number: 12100595Abstract: A sacrificial sealing layer is formed on a high-? metal gate (HKMG) stack to suppress oxidants, e.g., oxygen and water, from impacting the metal gate stack, thus preserving the device EOT. The method integrated processes that include forming an interfacial layer on the substrate; forming a high-? metal oxide layer on the interfacial layer, the high-? metal oxide layer comprising a dipole region adjacent to the interfacial layer, the dipole region; depositing a capping layer on the high-? metal oxide layer; and forming a sacrificial sealing layer on the capping layer. The dipole region is formed by driving a dopant species, e.g., zinc (Zn), vanadium (V), tungsten (W), molybdenum (Mo), ruthenium (Ru), titanium (Ti), tantalum (Ta), zirconium (Zr), aluminum (Al), niobium (Nb), or mixtures thereof, of a dipole film into the high-? metal oxide layer to form a dipole region.Type: GrantFiled: June 15, 2021Date of Patent: September 24, 2024Assignee: Applied Materials, Inc.Inventors: Yong Yang, Jacqueline S. Wrench, Yixiong Yang, Jianqiu Guo, Seshadri Ganguli, Steven C. H. Hung, Srinivas Gandikota
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Publication number: 20240287678Abstract: Methods of depositing a metal film by exposing a substrate surface to a halide precursor and an organosilane reactant are described. The halide precursor comprises a compound of general formula (I): MQzRm, wherein M is a metal, Q is a halogen selected from Cl, Br, F or I, z is from 1 to 6, R is selected from alkyl, CO, and cyclopentadienyl, and m is from 0 to 6. The aluminum reactant comprises a compound of general formula (II) or general formula (III): wherein R1, R2, R3, R4, R5, R6, R7, R8, Ra, Rb, Rc, Rd, Re, and Rf are independently selected from hydrogen (H), substituted alkyl or unsubstituted alkyl; and X, Y, X?, and Y? are independently selected from nitrogen (N) and carbon (C).Type: ApplicationFiled: April 22, 2024Publication date: August 29, 2024Applicant: Applied Materials, Inc.Inventors: Geetika Bajaj, Darshan Thakare, Prerna Goradia, Robert Jan Visser, Yixiong Yang, Jacqueline S. Wrench, Srinivas Gandikota
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Patent number: 12062545Abstract: Methods of forming metallic tungsten films selectively on a conductive surface relative to a dielectric surface are described. A substrate is exposed to a first process condition to deposit a tungsten-containing film that is substrate free of tungsten metal. The tungsten-containing film is then converted to a metallic tungsten film by exposure to a second process condition.Type: GrantFiled: June 4, 2021Date of Patent: August 13, 2024Assignee: Applied Materials, Inc.Inventors: Ilanit Fisher, Chi-Chou Lin, Kedi Wu, Wen Ting Chen, Shih Chung Chen, Srinivas Gandikota, Mandyam Sriram, Chenfei Shen, Naomi Yoshida, He Ren
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Publication number: 20240266163Abstract: A method of forming a high-? dielectric cap layer on a semiconductor structure formed on a substrate includes depositing the high-? dielectric cap layer on the semiconductor structure, depositing a sacrificial silicon cap layer on the high-? dielectric cap layer, performing a post cap anneal process to harden and densify the as-deposited high-? dielectric cap layer, and removing the sacrificial silicon cap layer.Type: ApplicationFiled: March 15, 2024Publication date: August 8, 2024Inventors: Srinivas GANDIKOTA, Yixiong YANG, Jacqueline Samantha WRENCH, Yong YANG, Steven C. H. HUNG
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Publication number: 20240268108Abstract: A memory device comprises: a stack of alternating silicon oxide layers and wordline layers; each of the wordline layers comprising dipole regions adjacent to the silicon oxide layers, the dipole regions comprising a nitride, a carbide, an oxide, a carbonitride, or combinations thereof of a dipole metal. The dipole regions are formed by driving a dipole film into a gate oxide layer of the wordline layers, and any residual dipole film is removed.Type: ApplicationFiled: April 12, 2024Publication date: August 8, 2024Applicant: Applied Materials, Inc.Inventors: Yong Yang, Jacqueline S. Wrench, Yixiong Yang, Pradeep K. Subrahmanyan, Srinivas Gandikota
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Publication number: 20240266414Abstract: Embodiments of the disclosure advantageously provide methods of manufacturing semiconductor devices having multi-Vt capability in the scaled space between nanosheets in advanced GAA nodes. One or more embodiments provide an integration scheme to advantageously reduce the gate resistance by combining n-/p-dipole and mid-gap metal with low resistance to achieve desired work function and low-resistance metal gate. In one or more embodiments, a mid-gap metal is used to fill nanosheets and act as a liner for subsequent fill by a low resistance metal. After dipole engineering, instead of filling the gate-all-around nanosheet with traditional n or p metal, in one or more embodiments, the nanosheet is advantageously filled with a single work function mid-gap metal to achieve n and p work function. If the work function was shifted in either P-dipole or N-dipole bandedge after dipole engineering, the mid-gap materials can also shift the bandedge the opposite way.Type: ApplicationFiled: March 22, 2023Publication date: August 8, 2024Applicant: Applied Materials, Inc.Inventors: Srinivas Gandikota, Yixiong Yang, Tengzhou Ma, Tianyi Huang, Geetika Bajaj, Hsin-Jung Yu, Seshadri Ganguli