Abstract: Methods comprising depositing a film material to form an initial film in a trench in a substrate surface are described. The film is treated to expand the film to grow beyond the substrate surface.

Abstract: Methods for depositing a metal layer in a feature definition of a semiconductor device are provided. In one implementation, a method for depositing a metal layer for forming a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a metal layer on a substrate and annealing the metal layer disposed on the substrate. The cyclic metal deposition process comprises exposing the substrate to a deposition precursor gas mixture to deposit a portion of the metal layer on the substrate, exposing the portion of the metal layer to either a plasma treatment process or hydrogen annealing process and repeating the exposing the substrate to a deposition precursor gas mixture and exposing the portion of the metal layer to either a plasma treatment process or hydrogen annealing process until a predetermined thickness of the metal layer is achieved.

Abstract: In one embodiment, a method of forming a barrier layer is provided. The method includes positioning a substrate in a processing chamber, forming a barrier layer over the substrate and in contact with the underlayer, and annealing the substrate. The substrate comprises at least one underlayer having cobalt, tungsten, or copper. The barrier layer has a thickness of less than 70 angstroms.

Abstract: Processing methods to form self-aligned high aspect ratio features are described. The methods comprise depositing a metal film on a structured substrate, volumetrically expanding the metal film, depositing a second film between the expanded pillars and optionally recessing the pillars and repeating the process to form the high aspect ratio features.

Abstract: Embodiments described herein relate to magnetic and electromagnetic systems and a method for controlling the density profile of plasma generated in a process volume of a PECVD chamber to affect deposition profile of a film. In one embodiment, a plurality of retaining brackets is disposed in a rotational magnetic housing of the magnetic housing systems. Each retaining bracket of the plurality of retaining brackets is disposed in the rotational magnetic housing with a distance d between each retaining bracket. The plurality of retaining brackets has a plurality of magnets removably disposed therein. The plurality of magnets is configured to travel in a circular path when the rotational magnetic housing is rotated around the round central opening.

Abstract: Embodiments described herein generally relate to methods of depositing thin films and, more particularly, to depositing metal thin films. The methods herein provide a nucleation free conversion (NFC) approach which involves forming an amorphous silicon layer over the dielectric layer, and performing an NFC process which acts to convert the amorphous silicon layer into a thin metal film. In some embodiments, the NFC process is performed multiple times until the resulting thin metal film is continuous. A bulk metal is formed over the thin metal film.

Abstract: Methods comprising depositing a film material to form an initial film in a trench in a substrate surface are described. The film is treated to expand the film to grow beyond the substrate surface.

Abstract: Aspects of the disclosure include methods of processing a substrate. The method includes depositing a conformal layer on a substrate which contains seams. The substrate is treated using a high pressure anneal in the presence of an oxidizer.

Abstract: Processing methods to etch metal oxide films with less etch residue are described. The methods comprise etching a metal oxide film with a metal halide etchant, and exposing the etch residue to a reductant to remove the etch residue. Some embodiments relate to etching tungsten oxide films. Some embodiments utilize tungsten halides to etch metal oxide films. Some embodiments utilize hydrogen gas as a reductant to remove etch residues.

Abstract: In one embodiment, a method of forming a barrier layer is provided. The method includes positioning a substrate in a processing chamber, forming a barrier layer over the substrate and in contact with the underlayer, and annealing the substrate. The substrate comprises at least one underlayer having cobalt, tungsten, or copper. The barrier layer has a thickness of less than 70 angstroms.

Abstract: Embodiments described herein relate to methods and materials for fabricating semiconductor device structures. In one example, a metal film stack includes a plurality of metal containing films and a plurality of metal derived films arranged in an alternating manner. In another example, a metal film stack includes a plurality of metal containing films which are modified into metal derived films. In certain embodiments, the metal film stacks are used in oxide/metal/oxide/metal (OMOM) structures for memory devices.

Abstract: A method of forming a memory device including a plurality of nonvolatile memory cells is provided. The method includes forming a hole in a stack of alternating insulator layers and memory cell layers. The stack extends from a bottom to a top, and the stack includes a plurality of insulator layers and plurality of memory cell layers. The method further includes depositing a first portion of a silicon channel layer. The first portion of the silicon channel layer extends from the bottom of the stack to the top of the stack. The method further includes adding a dopant layer over the first portion of the silicon channel layer. The dopant layer includes a first dopant. The method further includes depositing a second portion of the silicon channel layer. The second portion of the silicon channel layer extends from the bottom of the stack to the top of the stack.

Abstract: A graphene barrier layer is disclosed. Some embodiments relate to a graphene barrier layer capable of preventing diffusion from a fill layer into a substrate surface and/or vice versa. Some embodiments relate to a graphene barrier layer that prevents diffusion of fluorine from a tungsten layer into the underlying substrate. Additional embodiments relate to electronic devices which contain a graphene barrier layer.

Abstract: Methods for filling a substrate feature with a seamless tungsten fill are described. The methods include depositing a tungsten film, oxidizing the tungsten film to a tungsten oxide pillar, reducing the tungsten oxide film to a seamless tungsten gapfill and optionally depositing additional tungsten on the tungsten gapfill.

Abstract: A method of forming conformal amorphous metal films is disclosed. A method of forming crystalline metal films with a predetermined orientation is also disclosed. An amorphous nucleation layer is formed on a substrate surface. An amorphous metal layer is formed from the nucleation layer by atomic substitution. A crystalline metal layer is deposited on the amorphous metal layer by atomic layer deposition.

Abstract: A microelectronic device on a semiconductor substrate comprises: a gate electrode; and a spacer adjacent to the gate electrode, the spacer comprising: a the low-k dielectric film comprising one or more species of vanadium oxide, which is optionally doped, and an optional silicon nitride or oxide film. Methods comprise depositing a low-k dielectric film optionally sandwiched by a silicon nitride or oxide film to form a spacer adjacent to a gate electrode of a microelectronic device on a semiconductor substrate, wherein the low-k dielectric film comprises a vanadium-containing film.

Abstract: Methods of dep-etch in semiconductor devices (e.g. V-NAND) are described. A metal layer is deposited in a feature. The metal layer is removed by low temperature atomic layer etching by oxidizing the surface of the metal layer and etching the oxide in a layer-by-layer fashion. After removal of the metal layer, the features are filled with a metal.

Abstract: Methods for depositing a metal film without the use of a barrier layer are disclosed. Some embodiments comprise forming an amorphous nucleation layer comprising one or more of silicon or boron and forming a metal layer on the nucleation layer.

Abstract: Methods and apparatuses for substrate fabrication are provided herein.

Abstract: Implementations described herein generally relate to a method for forming a metal layer and to a method for forming an oxide layer on the metal layer. In one implementation, the metal layer is formed on a seed layer, and the seed layer helps the metal in the metal layer nucleate with small grain size without affecting the conductivity of the metal layer. The metal layer may be formed using plasma enhanced chemical vapor deposition (PECVD) and nitrogen gas may be flowed into the processing chamber along with the precursor gases. In another implementation, a barrier layer is formed on the metal layer in order to prevent the metal layer from being oxidized during subsequent oxide layer deposition process. In another implementation, the metal layer is treated prior to the deposition of the oxide layer in order to prevent the metal layer from being oxidized.