Patents by Inventor Stanley A. Williams

Stanley A. Williams has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MEMRISTOR STRUCTURE WITH A DOPANT SOURCE
    Publication number: 20140145142
    Abstract: A memristor including a dopant source is disclosed. The structure includes an electrode, a conductive alloy including a conducting material, a dopant source material, and a dopant, and a switching layer positioned between the electrode and the conductive alloy, wherein the switching layer includes an electronically semiconducting or nominally insulating and weak ionic switching material. A method for fabricating the memristor including a dopant source is also disclosed.
    Type: Application
    Filed: July 20, 2011
    Publication date: May 29, 2014
    Inventors: Minxian Max Zhang, Jianhua Yang, R. Stanley Williams
  • Ionic devices with interacting species
    Patent number: 8735858
    Abstract: An ionic device includes a layer of an ionic conductor containing first and second species of impurities. The first species of impurity in the layer is mobile in the ionic conductor, and a concentration profile of the first species determines a functional characteristic of the device. The second species of impurity in the layer interacts with the first species within the layer to create a structure that limits mobility of the first species in the layer.
    Type: Grant
    Filed: April 30, 2010
    Date of Patent: May 27, 2014
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Dmitri B. Strukov, Alexandre M. Bratkovski, R. Stanley Williams, Zhiyong Li
  • Multilayer structure based on a negative differential resistance material
    Patent number: 8729518
    Abstract: A multilayer structure is disclosed that includes a conductive layer, a layer of a negative differential resistance (NDR) material disposed above the conductive layer, a layer M2 disposed above the NDR material, a second layer of NDR material disposed above layer M2, and a conductive layer disposed above the second NDR layer. Layer M2 can include a conductive material interspersed with regions of a dielectric material or a layer of the dielectric material and regions of the conductive material disposed above and below the dielectric material.
    Type: Grant
    Filed: October 25, 2011
    Date of Patent: May 20, 2014
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Matthew D. Pickett, R. Stanley Williams, Gilberto M. Ribeiro, Warren Jackson
  • Asymmetric switching rectifier
    Patent number: 8711594
    Abstract: An asymmetric switching rectifier includes a first switching device to allow electric current to flow while in a first state and inhibit electric current in a second state and a second switching device connected in a head-to-head formation to said first switching device, said second switching to allow electric current to flow while in a first state and inhibit electric current in a second state. A first electric current to turn said switching devices to said first state is different than a second electric current to turn said switching devices to said second state. The rectifier further includes a bypass segment to draw a bypass electric current from a center electrode between said first switching device and said second switching device.
    Type: Grant
    Filed: August 18, 2011
    Date of Patent: April 29, 2014
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Minxian Max Zhang, Jianhua Yang, R. Stanley Williams
  • Field-programmable analog array with memristors
    Patent number: 8710865
    Abstract: A field-programmable analog array (FPAA) includes a digital signal routing network, an analog signal routing network, switch elements to interconnect the digital signal routing network with the analog signal routing network, and a configurable analog block (CAB) connected to the analog signal routing network and having a programmable resistor array. The switch elements are implemented via digital memristors, the programmable resistor array is implemented via analog memristors, and/or antifuses within one or more of the digital signal routing network and the analog signal routing network are implemented via digital memristors.
    Type: Grant
    Filed: October 26, 2011
    Date of Patent: April 29, 2014
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Jianhua Yang, Muhammad Shakeel Qureshi, Gilberto Medeiros Ribeiro, R Stanley Williams
  • HIGH-RELIABILITY HIGH-SPEED MEMRISTOR
    Publication number: 20140112059
    Abstract: A memristor has a first electrode, a second electrode parallel to the first electrode, and a switching layer disposing between the first and second electrodes. The switching layer contains a conduction channel and a reservoir zone. The conduction channel has a Fermi glass material with a variable concentration of mobile ions. The reservoir zone is laterally disposed relative to the conduction channel, and functions as a source/sink of mobile ions for the conduction channel In the switching operation, under the cooperative driving force of both electric field and thermal effects, the mobile ions are moved into or out of the laterally disposed reservoir zone to vary the concentration of the mobile ions in the conduction channel to change the conductivity of the Fermi glass material.
    Type: Application
    Filed: June 24, 2011
    Publication date: April 24, 2014
    Inventors: Feng Miao, Jianhua Yang, John Paul Strachan, Wei Yi, Gilberto Medeiros Ribeiro, R. Stanley Williams
  • Ionic devices containing a membrane between layers
    Patent number: 8705265
    Abstract: A device contains a first layer, a second layer; and a membrane between the first and second layers. Mobile ions are in at least one of the first and second layers, and the membrane is permeable to the ions. Interfaces of the conductive membrane with the first layer and the second layer are such that charge of a polarity of the ions collects at the interfaces.
    Type: Grant
    Filed: April 30, 2010
    Date of Patent: April 22, 2014
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Dmitri B. Strukov, Alexandre M. Bratkovski, R. Stanley Williams, Michael R. T. Tan
  • LOW ENERGY MEMRISTORS WITH ENGINEERED SWITCHING CHANNEL MATERIALS
    Publication number: 20140091270
    Abstract: Low energy memristors with engineered switching channel materials include: a first electrode; a second electrode; and a switching layer positioned between the first electrode and the second electrode, wherein the switching layer includes a first phase comprising an insulating matrix in which is dispersed a second phase comprising an electrically conducting compound material for forming a switching channel.
    Type: Application
    Filed: September 28, 2012
    Publication date: April 3, 2014
    Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
    Inventors: Jianhua Yang, Minxian Max Zhang, Gilberto Medeiros Ribeiro, R. Stanley Williams
  • MOULD ASSEMBLY
    Publication number: 20140053609
    Abstract: A method of forming a mould assembly (10) is provided. The method includes providing a mould body (12) defining a mould insert receiving zone (14). The method includes providing a mould insert (16), defining opposed sides (18, 20). One side (18) defines a mould cavity surface (21), against which an article is to be moulded, and the opposed side (20) defines a mould body seating arrangement (22) for seating the mould insert (16) in the mould insert receiving zone (14). The method further includes positioning the mould insert 16 in the mould insert receiving zone (14) of the mould body (12).
    Type: Application
    Filed: February 21, 2012
    Publication date: February 27, 2014
    Applicant: GRAIL INVENTIONS (PTY) LTD
    Inventor: Stanley William Bennett
  • Image-rotation prisms and optical interconnects employing the same
    Patent number: 8660432
    Abstract: Embodiments of the present invention relate to a family of image-rotation prisms. Each image-rotation prism has the property that as an image-rotation prism is rotated, an image passing through the image-rotation prism rotates at twice the angular rate of the image-rotation prism. Embodiments of the present invention include optical systems that can be used for board-to-board communications and employ the image-rotation prisms to compensate for arbitrary axial rotations and misalignment of optical signals and can be used to direct optical signals output from transmitters on one board to particular detectors of a detector arrangement located on an adjacent board.
    Type: Grant
    Filed: April 2, 2008
    Date of Patent: February 25, 2014
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Huei Pei Kuo, Robert G. Walmsley, Shih-Yuan Wang, Michael Renne Ty Tan, R. Stanley Williams
  • ELECTRONIC AND PLASMONIC ENHANCEMENT FOR SURFACE ENHANCED RAMAN SPECTROSCOPY
    Publication number: 20140036262
    Abstract: An apparatus for surface enhanced Raman spectroscopy includes a substrate, a nanostructure and a plasmonic material. The nanostructure and the plasmonic material are integrated together to provide electronic and plasmonic enhancement to a Raman signal produced by electromagnetic radiation scattering from an analyte.
    Type: Application
    Filed: July 31, 2012
    Publication date: February 6, 2014
    Inventors: Shih-Yuan Wang, Gary Gibson, Zhiyong Li, Alexandre M. Bratkovski, Huei Pei Kuo, Zhang-Lin Zhou, R Stanley Williams
  • IMPLEMENTING LOGIC CIRCUITS WITH MEMRISTORS
    Publication number: 20140028347
    Abstract: Implementing logic with memristors may include circuitry with at least three memristors and a bias resistor in a logic cell. One of the at least three memristors is an output memristor within the logic cell and the other memristors of the at least three memristors are input memristors. Each of the at least three memristors and the bias resistor are electrically connected to voltage sources wherein each voltage applied to each of the at least three memristors and the bias resistor and resistance states of the at least three memristors determine a resistance state of the output memristor.
    Type: Application
    Filed: July 30, 2012
    Publication date: January 30, 2014
    Inventors: Warren Robinett, R. Stanley Williams
  • MEMRISTOR CELL STRUCTURES FOR HIGH DENSITY ARRAYS
    Publication number: 20140027705
    Abstract: A memristor array includes a lower layer of crossbars, upper layer of crossbars intersecting the lower layer of crossbars, memristor cells interposed between intersecting crossbars, and pores separating adjacent memristor cells. A method forming a memristor array is also provided.
    Type: Application
    Filed: July 27, 2012
    Publication date: January 30, 2014
    Inventors: Jianhua Yang, Minxian Max Zhang, Gilberto Medeiros Ribeiro, R. Stanley Williams
  • ADJUSTABLE INTERSURFACE SPACING FOR SURFACE ENHANCED RAMAN SPECTROSCOPY
    Publication number: 20140029002
    Abstract: A sensor for surface enhanced Raman spectroscopy (SERS) sensor includes surfaces and an actuator to adjust an intersurface spacing between the surfaces to contain an analyte and allow the analyte to be released from containment.
    Type: Application
    Filed: July 30, 2012
    Publication date: January 30, 2014
    Inventors: Shih-Yuan Wang, Zhiyong Li, Alexandre M. Bratkovski, Gary Gibson, Huei Pei Kuo, Zhang-Lin Zhou, Steven J. Barcelo, Ansoon Kim, R Stanley Williams
  • INTEGRATED SENSORS
    Publication number: 20140028995
    Abstract: Examples of integrated sensors are disclosed herein. An example of an integrated sensor includes a flexible substrate, and an array of spaced apart sensing members formed on a surface of the flexible substrate. Each of the spaced apart sensing members includes a plurality of polygon assemblies. The polygon assemblies are arranged in a controlled pattern on the surface of the flexible substrate such that each of the plurality of polygon assemblies is a predetermined distance from each other of the plurality of polygon assemblies, and each of the plurality of polygon assemblies including collapsible signal amplifying structures controllably positioned in a predetermined geometric shape.
    Type: Application
    Filed: April 20, 2012
    Publication date: January 30, 2014
    Inventors: Alexandre M. Bratkovski, R. Stanley Williams, Zhiyong Li
  • MEMRISTIVE ELEMENTS THAT EXHIBIT MINIMAL SNEAK PATH CURRENT
    Publication number: 20130334485
    Abstract: Memristive elements are provided that include an active region disposed between a first electrode and a second electrode, the active region including two switching layers formed of a switching material capable of carrying a species of dopants and a conductive layer formed of a dopant source material. Memristive elements also are provided that include two active regions disposed between a first electrode and a second electrode, and a third electrode being disposed between and in electrical contact with both of the active regions. Each of the active regions include a switching layer formed of a switching material capable of carrying a species of dopants and a conductive layer formed of a dopant source material. Multilayer structures including the memristive elements also are provided.
    Type: Application
    Filed: February 28, 2011
    Publication date: December 19, 2013
    Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
    Inventors: Jianhua Yang, Minxian Max Zhang, R. Stanley Williams
  • Stateful negative differential resistance devices
    Patent number: 8611133
    Abstract: A stateful negative differential resistance device includes a first conductive electrode and a second conductive electrode. The device also includes a first material with a reversible, nonvolatile resistance that changes based on applied electrical energy and a second material comprising a differential resistance that is negative in a locally active region. The first material and second material are sandwiched between the first conductive electrode and second conductive electrode. A method for using a stateful NDR device includes applying programming energy to the stateful NDR device to set a state of the stateful NDR device to a predetermined state and removing electrical power from the stateful NDR device. Power-up energy is applied to the stateful NDR device such that the stateful NDR device returns to the predetermined state.
    Type: Grant
    Filed: January 9, 2012
    Date of Patent: December 17, 2013
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Matthew D. Pickett, Frederick A. Perner, R. Stanley Williams
  • Capacitive crossbar arrays
    Patent number: 8605488
    Abstract: A capacitive crossbar array includes a first set of conductors and a second set of conductors which intersect to form crosspoints. A nonlinear capacitive device is interposed between a first conductor within the first set and a second conductor within the second set at a crosspoint. The nonlinear capacitive device is configured to store information which is accessible through said first conductor and said second conductor. A method for utilizing a capacitive crossbar array is also provided.
    Type: Grant
    Filed: June 12, 2009
    Date of Patent: December 10, 2013
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Dmitri Borisovich Strukov, Gregory S. Snider, R. Stanley Williams
  • Memristive device and methods of making and using the same
    Patent number: 8605483
    Abstract: A memristive device is disclosed herein. The device includes a first electrode, a second electrode, and an active region disposed between the first and second electrodes. At least two mobile species are present in the active region. Each of the at least two mobile species is configured to define a separate state variable of the memristive device.
    Type: Grant
    Filed: December 23, 2008
    Date of Patent: December 10, 2013
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: R. Stanley Williams, Dmitri Borisovich Strukov, Alexandre M. Bratkovski
  • NEGATIVE DIFFERENTIAL RESISTANCE DEVICE
    Publication number: 20130307662
    Abstract: Apparatus and methods related to negative differential resistance (NDR) are provided. An NDR device includes a spaced pair of electrodes and at least two different materials disposed there between. One of the two materials is characterized by negative thermal expansion, while the other material is characterized by positive thermal expansion. The two materials are further characterized by distinct electrical resistivities. The NDR device is characterized by a non-linear electrical resistance curve that includes a negative differential resistance range. The NDR device operates along the curve in accordance with an applied voltage across the pair of electrodes.
    Type: Application
    Filed: February 1, 2011
    Publication date: November 21, 2013
    Inventors: Minxian Max Yang, R. Stanley Williams