Abstract: A circuit component that exhibits a region of negative differential resistance includes: a first layer of material; and a second layer of material in contact with the first layer of material, the contact forming a first self-heating interface. The first self-heating interface is structured such that an electrical current flowing from the first layer of material to the second layer of material encounters an electrical impedance occurring at the first interface that is greater than any electrical impedance occurring in the first and second layers of material, wherein heating occurring at the first interface is dominated by Joule heating caused by the electrical impedance occurring at the first interface, and wherein the electrical impedance occurring at the first interface decreases with increasing temperature to induce a region of negative differential resistance.

Abstract: In some examples, a device includes a nano-scale oscillator that exhibits chaotic oscillation responsive to a control input to the nano-scale oscillator, where the control input including a tunable input parameter.

Abstract: An electrically actuated switch comprises a first electrode, a second electrode, and an active region disposed therebetween. The active region comprises at least one primary active region comprising at least one material that can be doped or undoped to change its electrical conductivity, and a secondary active region comprising at least one material for providing a source/sink of ionic species that act as dopants for the primary active region(s). Methods of operating the switch are also provided.

Abstract: In an example, an apparatus includes an electrically conductive component having a first side and a second side, a first switching material formed on the first side of the electrically conductive component, and a second switching material formed on the second side of the electrically conductive component. The second switching material may include a different material than the first switching material and resistance states of each of the first switching material and the second switching material are to be modified through application of electric fields through the first switching material and the second switching material. The apparatus may also include an electrode in contact with one of the first switching material and the second switching material.

Abstract: A memristor structure may be provided that includes a first electrode, a second electrode, and a buffer layer disposed on the first electrode. The memristor structure may include a switching layer interposed between the second electrode and the buffer layer to form, when a voltage is applied, a filament or path that extends from the second electrode to the buffer layer and to form a Schottky-like contact or a heterojunction between the filament and the buffer layer.

Abstract: A non-volatile memory device with multiple latency tiers includes at least two crossbar memory arrays, each crossbar memory array comprising a number of memory cells, each memory cell connected to a word line and a bit line at a cross point. The crossbar memory arrays each have a different latency. The crossbar memory arrays are formed on a single die.

Abstract: Provided in one example is a nonvolatile memory crossbar array. The array includes a number of junctions formed by a number of row lines intersecting a number of column lines; and a resistive memory element in series with a selector at each of the junctions coupling between one of the row lines and one of the column lines. The selector may be a volatile switch including: a bottom electrode; an oxide layer disposed over the bottom electrode, the oxide layer including Cu2O; and a top electrode disposed over the oxide layer.

Abstract: A resistive memory array includes a plurality of resistive memory devices. A sneak path current in the resistive memory array is reduced when a negative temperature coefficient of resistance material is incorporated in series with a negative differential resistance selector that is in series with a memristor switching material at a junction formed at a cross-point between two conductors of one of the plurality of resistive memory devices.

Abstract: A negative differential resistance (NDR) device for non-volatile memory cells in crossbar arrays is provided. Each non-volatile memory cell is situated at a crosspoint of the array. Each non-volatile memory cell comprises a switching layer in series with an NDR material containing fast diffusive atoms that are electrochemically inactive. The switching layer is positioned between two elec-trodes.

Abstract: An electrically actuated switch comprises a first electrode, a second electrode, and an active region disposed therebetween. The active region comprises at least one primary active region comprising at least one material that can be doped or undoped to change its electrical conductivity, and a secondary active region comprising at least one material for providing a source/sink of ionic species that act as dopants for the primary active region(s). Methods of operating the switch are also provided.

Abstract: A device for generating a representative logic indicator of grouped memristors is described. The device includes a memristor array. The memristor array includes a number of first memristors having a first set of logic indicators and a number of second memristors having a second set of logic indicators. The second set of logic indicators is different than the first set of logic indicators. Each first memristor is grouped with a corresponding second memristor during a memory read operation to generate a representative logic indicator.

Abstract: In an example, a memristor apparatus with variable transmission delay may include a first memristor programmable to have one of a plurality of distinct resistance levels, a second memristor, a transistor connected between the first memristor and the second memristor, and a capacitor having a capacitance, in which the capacitor is connected between the first memristor and the transistor. In addition, application of a reading voltage across the second memristor is delayed by a time period equivalent to the programmed resistance level of the first memristor and the capacitance of the capacitor.

Abstract: A method of forming a mould assembly (10) is provided. The method includes providing a mould body (12) defining a mould insert receiving zone (14). The method includes providing a mould insert (16), defining opposed sides (18, 20). One side (18) defines a mould cavity surface (21), against which an article is to be moulded, and the opposed side (20) defines a mould body seating arrangement (22) for seating the mould insert (16) in the mould insert receiving zone (14). The method further includes positioning the mould insert 16 in the mould insert receiving zone (14) of the mould body (12).

Abstract: A method of operating a transceiver may comprise operating in an adaptive mode in which transmissions from the transceiver are halted after detection of interference, performing a clear channel assessment (CCA), as a result of the CCA, detecting energy from an interferer above a predetermined threshold, and switching operation to a non-adaptive mode in which the transceiver is configured to alternate transmission periods and idle periods according to a duty cycle. Then, the method may comprise performing an energy detect, as a result of the energy detect, subsequently detecting the energy from the interferer below the predetermined threshold, and switching operation to the adaptive mode.

Abstract: Examples of integrated sensors are disclosed herein. An example of an integrated sensor includes a substrate and a sensing member formed on a surface of the substrate. The sensing member includes collapsible signal amplifying structures and an area surrounding the collapsible signal amplifying structures that enables self-positioning of droplets exposed thereto toward the collapsible signal amplifying structures.

Abstract: A double-grating surface-enhanced Raman spectrometer. The spectrometer includes a substrate; a plurality of nanofingers carried by the substrate, the nanofingers arranged to define a first optical grating; a light source oriented to project a beam of light toward the first optical grating; a second optical grating oriented to receive a beam of light scattered from the first optical grating; and a detector oriented to receive a beam of light scattered from the second optical grating.

Abstract: Protective elements are provided for non-volatile memory cells in crossbar arrays in which each memristor is situated at a crosspoint of the array. Each memristor is provided with a protective element. The protective element includes a layer of a first oxide that upon heating converts to a second oxide having a higher resistivity than the first oxide.

Abstract: A duct tape and a method of making a duct tape having a customized, printed design on a surface of the duct tape. The method comprises providing a design for printing on the duct tape, digitally printing the design on the surface of the duct tape, and curing the ink printed on the duct tape with ultraviolet light in dual stages. The method further comprises applying on the digitally printed duct tape a material or composition having overcoat properties, release properties, or a combination thereof.

Abstract: A chemical-analysis device integrated with a metallic-nanofinger device for chemical sensing. The chemical-analysis device includes a metallic-nanofinger device, and a platform. The metallic-nanofinger device includes a substrate, and a plurality of nanofingers coupled with the substrate. A nanofinger of the plurality includes a flexible column, and a metallic cap coupled to an apex of the flexible column. At least the nanofinger and a second nanofinger of the plurality of nanofingers are to self-arrange into a close-packed configuration with at least one analyte molecule. A morphology of the metallic cap is to generate a shifted plasmonic-resonance peak associated with amplified luminescence from the analyte molecule. A method for using, and a chemical-analysis apparatus including the chemical-analysis device are also provided.

Abstract: Apparatus and methods related to negative differential resistance (NDR) are provided. An NDR device includes a spaced pair of electrodes and at least two different materials disposed there between. One of the two materials is characterized by negative thermal expansion, while the other material is characterized by positive thermal expansion. The two materials are further characterized by distinct electrical resistivities. The NDR device is characterized by a non-linear electrical resistance curve that includes a negative differential resistance range. The NDR device operates along the curve in accordance with an applied voltage across the pair of electrodes.