Abstract: The present invention relates to a stapler apparatus, comprising a stapler having a proximal end, a distal end and a longitudinal axis, the stapler further comprising a trigger, an anvil docking pin aligned substantially parallel with the longitudinal axis of the stapler, and a stapling means, the anvil docking pin and stapling means being at the distal end of the stapler, and a detachable anvil, comprising an anvil head and an anvil shaft, wherein the anvil shaft is adapted to receive the anvil docking pin and operation of the trigger causes the stapling means to be actuated, characterised in that the length of the anvil shaft is at least 4 cm. The present invention also relates to a method of forming an anastomosis between two surfaces using the stapler apparatus of the invention and a method of forming a stoma trephine in a subject using the stapler apparatus of the invention.

Abstract: A circuit component that exhibits a region of negative differential resistance includes: a first layer of material; and a second layer of material in contact with the first layer of material, the contact forming a first self-heating interface. The first self-heating interface is structured such that an electrical current flowing from the first layer of material to the second layer of material encounters an electrical impedance occurring at the first interface that is greater than any electrical impedance occurring in the first and second layers of material, wherein heating occurring at the first interface is dominated by Joule heating caused by the electrical impedance occurring at the first interface, and wherein the electrical impedance occurring at the first interface decreases with increasing temperature to induce a region of negative differential resistance.

Abstract: A system for re-initializing a memory array is described. The system includes a processor and a memory array communicatively coupled to the processor. The system also includes a memory manager. The memory manager includes an establish module to establish a reference state for the memory array. The reference state includes a number of target resistance values for the memory array. The memory manager includes a write module to write data to the memory array. The memory manager includes a re-initialize module to re-initialize the memory array to the established reference state.

Abstract: A nonlinear dielectric stack circuit element includes a first layer of material having a first dielectric constant; a second layer of material having a second dielectric constant; and a third layer of material sandwiched between the first layer of material and the second layer of material and having a third dielectric constant. The third dielectric constant has a value less than the first dielectric constant and the second dielectric constant.

Abstract: A non-volatile memory device with multiple latency tiers includes at least two crossbar memory arrays, each crossbar memory array comprising a number of memory cells, each memory cell connected to a word line and a bit line at a cross point. The crossbar memory arrays each have a different latency. The crossbar memory arrays are formed on a single die.

Abstract: In an example, an apparatus includes an electrically conductive component having a first side and a second side, a first switching material formed on the first side of the electrically conductive component, and a second switching material formed on the second side of the electrically conductive component. The second switching material may include a different material than the first switching material and resistance states of each of the first switching material and the second switching material are to be modified through application of electric fields through the first switching material and the second switching material. The apparatus may also include an electrode in contact with one of the first switching material and the second switching material.

Abstract: A memristor has a first electrode, a second electrode parallel to the first electrode, and a switching layer disposing between the first and second electrodes. The switching layer contains a conduction channel and a reservoir zone. The conduction channel has a Fermi glass material with a variable concentration of mobile ions. The reservoir zone is laterally disposed relative to the conduction channel, and functions as a source/sink of mobile ions for the conduction channel. In the switching operation, under the cooperative driving force of both electric field and thermal effects, the mobile ions are moved into or out of the laterally disposed reservoir zone to vary the concentration of the mobile ions in the conduction channel to change the conductivity of the Fermi glass material.

Abstract: Examples of integrated sensors are disclosed herein. An example of an integrated sensor includes a flexible substrate, and an array of spaced apart sensing members formed on a surface of the flexible substrate. Each of the spaced apart sensing members includes a plurality of polygon assemblies. The polygon assemblies are arranged in a controlled pattern on the surface of the flexible substrate such that each of the plurality of polygon assemblies is a predetermined distance from each other of the plurality of polygon assemblies, and each of the plurality of polygon assemblies including collapsible signal amplifying structures controllably positioned in a predetermined geometric shape.

Abstract: A nonlinear memristor device with a three-layer selector includes a memristor in electrical series with a three-layer selector. The memristor comprises at least one electrically conducting layer and at least one electrically insulating layer. The three-layer selector comprises a three-layer structure selected from the group consisting of XN—XO—XN; XN—YO—ZN: XN—YO—XN; XO—XN—XO; XO—YN—XO; XO—YN—ZO; XO—YO—XO; XO—YO—ZO; XN—YN—ZN; and XN—YN—XN, X represents a compound-forming metal different from Y and Z.

Abstract: A switching resistance memory device with an interfacial channel includes a stack made of a layer of a first material and a layer of a second material. The layers form an interface, with the interface comprising the interfacial channel along which charged species can travel. A first electrode contacts a first edge of the stack, and a second electrode contacts a second edge of the stack.

Abstract: A memristor structure may be provided that includes a first electrode, a second electrode, and a buffer layer disposed on the first electrode. The memristor structure may include a switching layer interposed between the second electrode and the buffer layer to form, when a voltage is applied, a filament or path that extends from the second electrode to the buffer layer and to form a Schottky-like contact or a heterojunction between the filament and the buffer layer.

Abstract: A method of operating a transceiver may comprise operating in an adaptive mode in which transmissions from the transceiver are halted after detection of interference, performing a clear channel assessment (CCA), as a result of the CCA, detecting energy from an interferer above a predetermined threshold, and switching operation to a non-adaptive mode in which the transceiver is configured to alternate transmission periods and idle periods according to a duty cycle. Then, the method may comprise performing an energy detect, as a result of the energy detect, subsequently detecting the energy from the interferer below the predetermined threshold, and switching operation to the adaptive mode.

Abstract: A sub-wavelength grating device having controlled phase response includes a grating layer having line widths, line thicknesses, line periods, and line spacings selected to produce a first level of control in phase changes of different portions of a beam of light reflected from the grating layer. The device also includes a substrate affixed to the grating layer that produces a second level of control in phase changes of different portions of a beam of light reflected from the grating layer, the second level of control being accomplished abrupt stepping of the substrate in a horizontal dimension, ramping the substrate in a horizontal dimension, or changing the index of refraction in a horizontal dimension.

Abstract: A negative index material (or metamaterial) crossbar includes a first layer of approximately parallel nanowires and a second layer of approximately parallel nanowires that overlay the nanowires in the first layer. The nanowires in the first layer are approximately perpendicular in orientation to the nanowires in the second layer. Each nanowire of the first layer and each nanowire of the second layer has substantially regularly spaced fingers. The crossbar further includes resonant elements at nanowire intersections between the respective layers. Each resonant element includes two fingers of a nanowire in the first layer and two fingers of a nanowire in the second layer.

Abstract: A three dimensional multilayer circuit (600) includes a plurality of crossbar arrays (512) made up of intersecting crossbar segments (410, 420) and programmable crosspoint devices (514) interposed between the intersecting crossbar segments (410, 420). Shift pins (505, 510) are used to shift connection domains (430) of the intersecting crossbar segments (410, 420) between stacked crossbar arrays (512) such that the programmable crosspoint devices (514) are uniquely addressed. The shift pins (505, 510) make electrical connections between crossbar arrays (512) by passing vertically between crossbar segments (410, 510) in the first crossbar array (512) and crossbar segments in a second crossbar array. A method for transforming multilayer circuits is also described.

Abstract: A chemical-analysis device integrated with a metallic-nanofinger device for chemical sensing. The chemical-analysis device includes a metallic-nanofinger device, and a platform. The metallic-nanofinger device includes a substrate, and a plurality of nanofingers coupled with the substrate. A nanofinger of the plurality includes a flexible column, and a metallic cap coupled to an apex of the flexible column. At least the nanofinger and a second nanofinger of the plurality of nanofingers are to self-arrange into a close-packed configuration with at least one analyte molecule. A morphology of the metallic cap is to generate a shifted plasmonic-resonance peak associated with amplified luminescence from the analyte molecule. A method for using, and a chemical-analysis apparatus including the chemical-analysis device are also provided.

Abstract: A metallic-nanofinger device for chemical sensing. The device includes a substrate, and a plurality of nanofingers. A nanofinger includes a flexible column, and a metallic cap coupled to an apex of the flexible column. At least the nanofinger and a second nanofinger are to self-arrange into a close-packed configuration with at least one analyte molecule disposed between at least the metallic cap and a second metallic cap of respective nanofinger and second nanofinger. A morphology of the metallic cap is to generate a shifted plasmonic-resonance peak associated with amplified luminescence from the analyte molecule. A coating encapsulating the metallic cap to respond upon exposure to a liquid, and a chemical-sensing chip including the metallic-nanofinger device are also provided.

Abstract: A memristor with a channel region in thermal equilibrium with a containing region. The channel region has a variable concentration of mobile ions. The containing region, formed of stoichiometric crystalline material, contains and is in thermal equilibrium with the channel region.

Abstract: A memristor with dopant-compensated switching, the memristor having a bottom electrode, a top electrode, and an active region sandwiched between the bottom electrode and the top electrode. The active region is made up of an electrically insulating material and an electrically conducting material. The insulating material includes compensating dopants to partially or fully compensate for native dopants in the insulating material. Methods for making the memristor are also disclosed.

Abstract: A memristor including a dopant source is disclosed. The structure includes an electrode, a conductive alloy including a conducting material, a dopant source material, and a dopant, and a switching layer positioned between the electrode and the conductive alloy, wherein the switching layer includes an electronically semiconducting or nominally insulating and weak ionic switching material. A method for fabricating the memristor including a dopant source is also disclosed.