Abstract: An adjustable compound optical microlens apparatus comprises first and second microlenses that are separated from one another along their optical axes. At least one of the microlenses is movable relative to the other. In a preferred embodiment, one microlens is stationary, the other movable. A MEMS controller electrically controls the position of the movable microlens relative to the stationary microlens, or the positions of at least two movable microlenses relative to one another. In a preferred embodiment, one microlens element is stationary, the other movable. A MEMS controller electrically controls the position of the movable microlens relative to the other. In accordance with one embodiment of our invention, an array of such microlens apparatuses is also contemplated, especially for applications such optical switches and routers.

Abstract: A tunable optical lens includes a solid refractive optical lens, a channel adjacent to the solid refractive optical lens, and an extended body of liquid. A portion of the body forms at least part of an aperture stop for the lens. The portion of the body forms a meniscus that protrudes from or into the channel. The liquid is light-absorbing in the visual spectrum and/or in the near-infrared spectrum.

Abstract: A tunable microlens is disclosed that having a substrate with a non-zero radius of curvature in a way such that the microlens is able to achieve a new directional view without manual repositioning. The directional view of the microlens is altered by applying a voltage to at least one of a plurality of electrodes and thereby causing a voltage differential between the at least one of a plurality of electrodes and a conducting droplet of liquid disposed on the substrate with a non-zero radius of curvature. As the droplet moves to a different point along the surface of the substrate having a non-zero radius of curvature, the directional view the microlens changes in a way such that light originating from the new directional view is more advantageously focused into an image on a detector. The field of view of the microlens is limited only by the area on the substrate over which the droplet can move. An array of such microlenses may be used to facilitate a wider field of view.

Abstract: A time-division multiplexed optical signal is routed to several input ports of a MEMS-mirror Optical Cross connect (OXC). Advantageously, a single optical signal can be routed through fiber delay coils of varying lengths to introduce precise delay to an optical pulse such that the optical pulse is fed to the input ports of the OXC at various timeslots. After switching the optical pulses through the OXC, the switched optical pulse at different timeslots is combined (multiplexed) and thereafter detected. The amount of optical energy in the (combined) received (output) enables the calibration or training of the OXC. The circuit may be reconfigured to measure the amount of cross talk (signal leakage), insertion loss, and time delay that the OXC introduces in the system.

Abstract: Sidelobe formation in photolithographic patterns is suppressed by non-rectangular, non-circular contact openings formed in attenuated phase shift photomasks. The contact openings may be diamond-shaped, star-shaped, cross-shaped, or various other shapes which include multiple vertices. The contact opening shapes may include only straight line segments or they may include rounded segments. The contact openings may be arranged in various relative configurations such as in arrays in which the contact openings are sized and spaced by sub-wavelength dimensions. A method for forming contact openings on a photosensitive film uses the attenuated phase shift photomask to form a contact pattern free of pattern defects. A computer readable medium includes instructions for causing a photomask manufacturing tool to generate the attenuated phase-shift photomask.

Abstract: A time-division multiplexed optical signal is routed to several input ports of a MEMS-mirror Optical Cross connect (OXC). Advantageously, a single optical signal can be routed through fiber delay coils of varying lengths to introduce precise delay to an optical pulse such that the optical pulse is fed to the input ports of the OXC at various timeslots. After switching the optical pulses through the OXC, the switched optical pulse at different timeslots is combined (multiplexed) and thereafter detected. The amount of optical energy in the (combined) received (output) enables the calibration or training of the OXC. The circuit may be reconfigured to measure the amount of cross talk (signal leakage), insertion loss, and time delay that the OXC introduces in the system.

Abstract: An algorithm for improving signals between two or more mirrors is described. The algorithm is used to determine the initial voltages for improved signal transmission and is also used to maintain improved transmission. The algorithm utilizes random jump when the signal is too low. The step sizes and bounding boxes for the algorithm can be determined from modeling. One by-product of the algorithm is the determination of the hill shape. This information can be used in a subsequent accelerated retraining procedure. An a priori quadratic approximation of the hill's shape is used to reduce the number of measurements used for retraining.

Abstract: A method of calibrating a crossconnect including a MEMS device and another optical device, each of which further include a plurality of elements, the method including determining a relationship between an applied voltage and an angle response for a number of the elements of the MEMS device, determining a function of beam position and element position for the number of the elements of the MEMS device, assembling the MEMS device and the another optical device to produce the crossconnect, applying voltages to make sample connections between the MEMS device and the another optical device based on the relationship and the function, determining a transformation for the sample connections caused by packaging the crossconnect, and redetermining the relationship and the function based on the transformation. The method may be iterated more than once to achieve a more accurate determination.

Abstract: Sidelobe formation in photolithographic patterns is suppressed by nonrectangular, non-circular contact openings formed in attenuated phase shift photomasks. The contact openings may be diamond-shaped, star-shaped, cross-shaped, or various other shapes which include multiple vertices. The contact opening shapes may include only straight line segments or they may include rounded segments. The contact openings may be arranged in various relative configurations such as in arrays in which the contact openings are sized and spaced by sub-wavelength dimensions. A method for forming contact openings on a photosensitive film uses the attenuated phase shift photomask to form a contact pattern free of pattern defects. A computer readable medium includes instructions for causing a photomask manufacturing tool to generate the attenuated phase-shift photomask.

Abstract: An improved lithographic process for fabricating articles comprising photonic band gap materials with micron-scale periodicities is provided, the process readily capable of being performed by current lithographic processes and equipment. The process involves providing a three-dimensional structure made up of a plurality of stacked layers, where each layer contains a substantially planar lattice of shapes of a first material, typically silicon, with interstices between the shapes. Each shape contacts at least one shape of an adjacent layer, the interstices throughout the plurality of layers are interconnected, and the interstices comprise a second material, e.g., silicon dioxide. Typically, the second material is etched from the interconnected interstices to provide a structure of the first material and air, this structure designed to provide a particular photonic band gap.

Abstract: An improved attenuated phase-shifting mask (APSM) for use with an imaging tool for forming a patterned feature on a photoresist layer of a semiconductor wafer. The APSM has a transmissive region for substantially transmitting light therethrough to form a projected image substantially shaped as the patterned feature on the photoresist layer. The APSM also has an attenuating and phase-shifting region, contiguous with the transmissive region, for absorbing a portion of the light incident thereon and for shifting the phase of the incident light by a predetermined number of degrees relative to that of the light transmitted through the transmissive region so as to destructively interfere with the light transmitted through the transmissive region and to project a background image.

Abstract: A lithographic process for making an article such as a semiconductor device or a lithographic mask is disclosed. In the process, articles are fabricated by a sequence of steps in which materials are deposited on a substrate and patterned. These patterned layers are used to form devices on the semiconductor substrate. The desired pattern is formed by introducing an image of a first pattern in a layer of energy sensitive material. The image is then developed to form a first pattern. A layer of energy sensitive material is then formed over the first pattern. An image of a second pattern is then formed in the layer of energy sensitive material formed over the first pattern. The second pattern is then developed. The desired pattern is then developed from the first pattern and the second pattern.

Abstract: A light emitting device made of semiconducting materials. The device has an optical microcavity which supports a resonant mode of predetermined photon energy. Within the cavity is a quantum well of predetermined thickness and energy depth. The quantum well is designed such that it forms bound electron, exciton, lower polariton, and hole energy states of predetermined energy. The energy of an exciton state is set to equal the predetermined photon energy of the microcavity mode such that polariton states are created. A means is provided for resonantly tunneling electrons into a quantum well energy state. In a first embodiment, electrons resonantly tunnel into an electron energy state. In a second embodiment, electrons resonantly tunnel into an exciton energy state, during which tunneling the electrons simultaneously fuse with holes to form excitons.