Abstract: A method for producing a semiconductor device with an electrode structure includes providing a semiconductor body with a first surface, and with a first sacrificial layer extending in a vertical direction of the semiconductor body from the first surface, and forming a first trench extending from the first surface into the semiconductor body. The first trench is formed at least by removing the sacrificial layer in a section adjacent to the first surface. The method further includes forming a second trench by isotropically etching the semiconductor body in the first trench, forming a dielectric layer which covers sidewalls of the second trench, and forming an electrode on the dielectric layer in the second trench, the electrode and the dielectric layer in the second trench forming the electrode structure.

Abstract: A device including an imide layer with non-contact openings and the method for producing the device. One embodiment provides a substrate on a main surface of the substrate, an imide layer on the metallization layer, at least one contact opening through the imide layer and a plurality of non-contact openings in the imide layer. The non-contact openings are dimensioned to provide for an increased surface area of the imide layer or a surface area of the imide layer which is not reduced by more than 10 percent.