Abstract: A projection lens of an EUV-lithographic projection exposure system with at least two reflective optical elements each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light, wherein the bodies of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures, and wherein the absolute value of the difference between the zero cross temperatures is more than 6K.

Abstract: An optical imaging arrangement includes an optical element unit, and an actuator device connected to the optical element unit and is configured to be connected to a support structure for supporting the optical unit. The actuator device is configured to: actively adjust, in an adjustment state, a position and/or an orientation of the optical unit with respect to the support structure in N degrees of freedom; and support the optical element unit in a statically overdetermined manner in at least one of the N degrees of freedom via a plurality of active first and second actuator components such that, in a holding state following the adjustment state, the first and second actuator components cause a parasitic residual load introduced into the optical element unit in the at least one of the N degrees of freedom.

Abstract: A projection lens of an EUV-lithographic projection exposure system with at least two reflective optical elements each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light, wherein the bodies of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures, and wherein the absolute value of the difference between the zero cross temperatures is more than 6K.

Abstract: An optical imaging arrangement includes an optical projection system, a support structure system and a control device. The optical projection system includes a group of optical elements supported by the support structure system and configured to transfer, in an exposure process using exposure light along an exposure light path, an image of a pattern of a mask onto a substrate. The group of optical elements includes a first optical element and a second optical element and the control device includes a sensor device and an active device. The sensor device is functionally associated to the first optical element and is configured to capture mechanical disturbance information representative of a mechanical disturbance acting on the first optical element in at least one degree of freedom up to all six degrees of freedom.

Abstract: A projection lens of an EUV-lithographic projection exposure system with at least two reflective optical elements each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light, wherein the bodies of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures, and wherein the absolute value of the difference between the zero cross temperatures is more than 6K.

Abstract: An optical imaging device, in particular for use in microlithography, includes a mask device for receiving a mask having a projection pattern, a projection device with an optical element group, a substrate device for receiving a substrate and an immersion zone. The optical element group is adapted to project the projection pattern onto the substrate and includes a plurality of optical elements with an immersion element to which the substrate is at least temporarily located adjacent to during operation. During operation, the immersion zone is located between the immersion element and the substrate and is at least temporarily filled with an immersion medium. A thermal attenuation device is provided, the thermal attenuation device being adapted to reduce fluctuations within the temperature distribution of the immersion element induced by the immersion medium.

Abstract: An EUV imaging apparatus is provided, which includes a reference structure and a first optical element, which is actuatable relative to the reference structure with the aid of a first actuator. The first actuator is a self-holding actuator. The apparatus includes a second optical element, which is actuatable relative to the reference structure a second actuator. The second actuator is a non-self-holding actuator.

Abstract: There is provided an optical imaging device, in particular for microlithography, comprising at least one optical element and at least one holding device associated to the optical element (109), wherein the holding device holds the optical element and a first part (109.1) of the optical element contacts a first atmosphere and a second part (109.2) of the optical element at least temporarily contacts a second atmosphere. There is provided a reduction device at least reducing dynamic fluctuations in the pressure difference between the first atmosphere and the second atmosphere.

Abstract: An optical imaging device, in particular for use in microlithography, includes a mask device for receiving a mask having a projection pattern, a projection device with an optical element group, a substrate device for receiving a substrate and an immersion zone. The optical element group is adapted to project the projection pattern onto the substrate and includes a plurality of optical elements with an immersion element to which the substrate is at least temporarily located adjacent to during operation. During operation, the immersion zone is located between the immersion element and the substrate and is at least temporarily filled with an immersion medium. A thermal attenuation device is provided, the thermal attenuation device being adapted to reduce fluctuations within the temperature distribution of the immersion element induced by the immersion medium.

Abstract: A projection lens of an EUV-lithographic projection exposure system with at least two reflective optical elements each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light, wherein the bodies of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures, and wherein the absolute value of the difference between the zero cross temperatures is more than 6K.

Abstract: An actuator includes a housing, a movable part, and an advancing unit that is at least temporarily connected to the movable part. The advancing unit includes a deformation unit and a deformer configured to deform the deformation unit with a vector component perpendicular to an effective direction of the actuator so that a total length of the deformation unit changes in the effective direction of the actuator as a result of the deformation. The movable part is configured to move in the effective direction of the actuator upon a removal of the vector component on the deformation unit and the deformation unit is disposed along the effective direction of the actuator upon the removal of the vector component on the deformation unit.

Abstract: A projection lens of an EUV-lithographic projection exposure system with at least two reflective optical elements each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light, wherein the bodies of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures, and wherein the absolute value of the difference between the zero cross temperatures is more than 6K.

Abstract: A device for adjustably positioning an optical component includes a holding unit, which is which at least partly composed of a magnetostrictive material, and a mechanism for generating a magnetic field having a predetermined directional and amplitude distribution in the region of the holding unit. The holding unit has, in a predefined direction, an expansion which can be varied by a specific absolute value by the effect of the magnetic field.

Abstract: A projection lens of an EUV-lithographic projection exposure system with at least two reflective optical elements each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light, wherein the bodies of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures, and wherein the absolute value of the difference between the zero cross temperatures is more than 6K.

Abstract: There is provided an optical imaging device, in particular for microlithography, comprising at least one optical element and at least one holding device associated to the optical element (109), wherein the holding device holds the optical element and a first part (109.1) of the optical element contacts a first atmosphere and a second part (109.2) of the optical element at least temporarily contacts a second atmosphere. There is provided a reduction device at least reducing dynamic fluctuations in the pressure difference between the first atmosphere and the second atmosphere.

Abstract: A projection lens of an EUV-lithographic projection exposure system with at least two reflective optical elements each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light, wherein the bodies of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures, and wherein the absolute value of the difference between the zero cross temperatures is more than 6K.

Abstract: An EUV imaging apparatus is provided, which includes a reference structure and a first optical element, which is actuatable relative to the reference structure with the aid of a first actuator. The first actuator is a self-holding actuator. The apparatus includes a second optical element, which is actuatable relative to the reference structure a second actuator. The second actuator is a non-self-holding actuator.

Abstract: The disclosure relates to optical arrangements in a microlithographic projection exposure apparatus. In accordance with one aspect, an optical arrangement has at least one mirror segment arrangement including a plurality of separate mirror segments. The mirror segments are connected to a carrying structure of the projection exposure apparatus via mounting elements. At least one of the mounting elements, which is assigned to a first one of the mirror segments, extends, on the opposite side to the optically active surface of the mirror segment arrangement, at least partly into the region of a second mirror segment of the mirror segment arrangement. The second mirror segment is adjacent to the first mirror segment.

Abstract: An actuator includes a housing, a movable part, and an advancing unit that is at least temporarily connected to the movable part. The advancing unit includes a deformation unit and a deformer configured to deform the deformation unit with a vector component perpendicular to an effective direction of the actuator so that a total length of the deformation unit changes in the effective direction of the actuator as a result of the deformation. The movable part is configured to move in the effective direction of the actuator upon a removal of the vector component on the deformation unit and the deformation unit is disposed along the effective direction of the actuator upon the removal of the vector component on the deformation unit.

Abstract: An optical module, in particular for microlithography, with an optical element unit, a support device, a deformation device and a measuring device is disclosed. The support device is supported on the optical element unit, whereas for deforming an optical surface of the optical element unit, the deformation device engages a deformation section of the optical element unit comprising the optical surface. For determining the position and/or the orientation of the optical element unit with respect to an external reference in at least one degree of freedom, the measuring device comprises at least one measuring element, wherein the measuring element is arranged on a reference section of the optical element unit.