Abstract: A method for producing a silicon wafer for an electronic component, having the method step of epitaxially growing of a silicon layer on a carrier substrate and removing the silicon layer as a silicon wafer from the carrier substrate, in which at least one p-dopant and at least one n-dopant are introduced into the silicon layer during the epitaxial growth. The dopants are introduced into the silicon layer such that the silicon layer is formed having an electrically active p-doping and an electrically active n-doping, each greater than 1×1014 cm?3.

Abstract: An apparatus for etching one side of a semiconductor layer, including at least one etching tank for receiving an electrolyte, a first electrode, which is arranged to make electrical contact with the electrolyte located in the etching tank during use, at least a second electrode, which is arranged to make indirect or direct electrical contact with the semiconductor layer, at least one electric current source, which is electrically conductively connected to the first and the second electrode to produce an etching current, and at least one transport apparatus for transporting the semiconductor layer relative to the etching tank in such a way that substantially only an etching side of the semiconductor layer that is to be etched can be wetted by the electrolyte located in the etching tank during use.

Abstract: A method for arranging a plurality of semiconductor seed substrates on a carrier element, in which for applying a semiconductor layer to the seed substrates, the seed substrates are arranged on the carrier element by integral bonding. A carrier element having integrally bonded seed substrates for coating with a semiconductor layer is also provided.

Abstract: An articulated/swivel joint for the articulated connection between a rear section and a front section of a construction machine includes a joint mechanism assigned to a swivel-stop arrangement for limiting the swivel movement of a front joint part in relation to a rear joint part. The swivel-stop arrangement includes a first swivel stop for predetermining a maximum amount of swivel deflection during deflection of the front joint part in relation to the rear joint part in a first swivel-movement direction and a second swivel stop for predetermining a second maximum amount of swivel deflection during deflection of the front joint part in relation to the rear joint part in a second swivel-movement direction. When an articulated movement is performed, the maximum swivel-deflection range decreases as the amount of articulated deflection increases, starting from a neutral position of articulation of the front joint part in relation to the rear joint part.

Abstract: The invention relates to crystalline forms of 4-((R)-2-{[6-((S)-3-methoxy-pyrrolidin-1-yl)-2-phenyl-pyrimidine-4-carbony]-amino}-3-phosphono-propionyl)-piperazine-1-carboxylic acid butyl ester hydrochloride, processes for the preparation thereof, pharmaceutical compositions comprising said crystalline forms, pharmaceutical compositions prepared from such crystalline forms and their use as a medicament, especially as a P2Y12 receptor antagonist.

Abstract: The invention relates to a device and a method for continuous production of porous silicon layers (single or multiple layers) on workpieces made of silicon or workpieces with a silicon coating. The method according to the invention is thereby based on a one-sided etching method, the workpiece being guided horizontally, by means of a transport device, with the front side of the workpiece to be etched, past at least one etching chamber, comprising an electrolyte and a cathode. This method can be used in particular for the production of PV cells.

Abstract: The invention relates to crystalline forms of 4-((R)-2-{[6-((S)-3-methoxy-pyrrolidin-1-yl)-2-phenyl-pyrimidine-4 carbonyl]-amino}-3-phosphono-propionyl)-piperazine-1-carboxylic acid butyl ester hydrochloride, processes for the preparation thereof, pharmaceutical compositions comprising said crystalline forms, pharmaceutical compositions prepared from such crystalline forms and their use as a medicament, especially as a P2Y12 receptor antagonist.

Abstract: The invention relates to crystalline forms of 4-((R)-2-{[6-((S)-3-methoxy-pyrrolidin-1-yl)-2-phenyl-pyrimidine-4 carbonyl]-amino}-3-phosphono-propionyl)-piperazine-1-carboxylic acid butyl ester hydrochloride, processes for the preparation thereof, pharmaceutical compositions comprising said crystalline forms, pharmaceutical compositions prepared from such crystalline forms and their use as a medicament, especially as a P2Y12 receptor antagonist.

Abstract: A method for producing a semiconductor layer (3), including the following method steps: A creating a release layer (2) on a carrier substrate (1); B applying a semiconductor layer (3) to the release layer (2); C detaching the semiconductor layer (3) from the carrier substrate. The invention is characterized in that, in method step A, the release layer (2) is created so as to fully cover at least a processing side of the carrier substrate, in that, in method step B, the semiconductor layer (3) is applied so as to fully cover the release layer (2) at least on the processing side and partially overlap one or more peripheral sides (5a, 5b) of the carrier substrate and in that, between method steps B and C, in a method step C0, regions of the semiconductor layer (3) that overlap a peripheral side are removed. The invention also relates to a semiconductor wafer, to a device for edge correction, to a detaching unit and to a device for producing a semiconductor layer.

Abstract: A method for arranging a plurality of semiconductor seed substrates on a carrier element, in which for applying a semiconductor layer to the seed substrates, the seed substrates are arranged on the carrier element by integral bonding. A carrier element having integrally bonded seed substrates for coating with a semiconductor layer is also provided.

Abstract: A method for producing a silicon wafer for an electronic component, having the method step of epitaxially growing of a silicon layer on a carrier substrate and removing the silicon layer as a silicon wafer from the carrier substrate, in which at least one p-dopant and at least one n-dopant are introduced into the silicon layer during the epitaxial growth. The dopants are introduced into the silicon layer such that the silicon layer is formed having an electrically active p-doping and an electrically active n-doping, each greater than 1×1014 cm?3.

Abstract: An apparatus for etching one side of a semiconductor layer, including at least one etching tank for receiving an electrolyte, a first electrode, which is arranged to make electrical contact with the electrolyte located in the etching tank during use, at least a second electrode, which is arranged to make indirect or direct electrical contact with the semiconductor layer, at least one electric current source, which is electrically conductively connected to the first and the second electrode to produce an etching current, and at least one transport apparatus for transporting the semiconductor layer relative to the etching tank in such a way that substantially only an etching side of the semiconductor layer that is to be etched can be wetted by the electrolyte located in the etching tank during use.

Abstract: A method for producing a semiconductor layer (3), including the following method steps: A creating a release layer (2) on a carrier substrate (1); B applying a semiconductor layer (3) to the release layer (2); C detaching the semiconductor layer (3) from the carrier substrate. The invention is characterized in that, in method step A, the release layer (2) is created so as to fully cover at least a processing side of the carrier substrate, in that, in method step B, the semiconductor layer (3) is applied so as to fully cover the release layer (2) at least on the processing side and partially overlap one or more peripheral sides (5a, 5b) of the carrier substrate and in that, between method steps B and C, in a method step C0, regions of the semiconductor layer (3) that overlap a peripheral side are removed. The invention also relates to a semiconductor wafer, to a device for edge correction, to a detaching unit and to a device for producing a semiconductor layer.

Abstract: The invention relates to a semiconductor structure made of a substrate and a semiconductor layer which are bonded integrally to each other via a thermally and/or chemically cured adhesive. Likewise, the invention relates to a method for the production of such integral bonds. Use in such semiconductor structures, in particular as solar cell or solar cell module.

Abstract: A device and a method for continuous chemical vapor deposition under atmospheric pressure on substrates. The device is hereby based on a reaction chamber, along the open sides of which the substrates are guided, as a result of which the corresponding coatings can be effected on the side of the substrates which is orientated towards the chamber interior.

Abstract: The present invention relates to a gas lock for separating two gas chambers, which while taking up minimal space makes it possible to achieve the separation of gases without contact with the product/educt/transporting system. The gas lock according to the invention is distinguished by the integration of a measuring chamber for measuring at least one physical and/or chemical property. Also, the present invention relates to a coating device which comprises a gas lock according to the invention. Also provided are possibilities for using the gas lock according to the invention.

Abstract: A device for removing floating material from a liquid, especially from sewage, has at least one sieve element shaped like a filter basket, for example, that in a front side has an inlet opening through which liquid can flow into the interior of the sieve element. The device is equipped with a drive so the sieve element can rotate around a rotation axis. A collection device is arranged within the sieve element for collecting the liquid and/or floating material, in which case the collection device is attached to a pumping-out device for the liquid and/or the floating material. A process for removing floating material from a liquid, especially from sewage, uses a sieve device that contains at least one sieve element that may be shaped like a filter basket, for example, and is equipped with a drive so it can rotate around a rotating axis.

Abstract: The invention relates to a method for continuous coating of substrates, in which the substrates are transported continuously through a deposition chamber and, at the same time, measures are adopted for reducing parasitic deposits as well as possible. Likewise, the invention relates to a corresponding device for continuous coating of substrates.