Abstract: The present invention relates to a gas lock for separating two gas chambers, which while taking up minimal space makes it possible to achieve the separation of gases without contact with the product/educt/transporting system. The gas lock according to the invention is distinguished by the integration of a measuring chamber for measuring at least one physical and/or chemical property. Also, the present invention relates to a coating device which comprises a gas lock according to the invention. Also provided are possibilities for using the gas lock according to the invention.

Abstract: A device for removing floating material from a liquid, especially from sewage, has at least one sieve element shaped like a filter basket, for example, that in a front side has an inlet opening through which liquid can flow into the interior of the sieve element. The device is equipped with a drive so the sieve element can rotate around a rotation axis. A collection device is arranged within the sieve element for collecting the liquid and/or floating material, in which case the collection device is attached to a pumping-out device for the liquid and/or the floating material. A process for removing floating material from a liquid, especially from sewage, uses a sieve device that contains at least one sieve element that may be shaped like a filter basket, for example, and is equipped with a drive so it can rotate around a rotating axis.

Abstract: The invention relates to a method for continuous coating of substrates, in which the substrates are transported continuously through a deposition chamber and, at the same time, measures are adopted for reducing parasitic deposits as well as possible. Likewise, the invention relates to a corresponding device for continuous coating of substrates.

Abstract: The present invention relates to a gas lock for separating two gas chambers, which while taking up minimal space makes it possible to achieve the separation of gases without contact with the product/educt/transporting system. The gas lock according to the invention is distinguished in that at least one means for manipulation of the flow is present in a flow passage of the gas lock. Also, the present invention relates to a coating device which comprises a gas lock according to the invention. Also provided are possibilities for using the gas lock according to the invention.

Abstract: The invention refers to a filter device for filtering sewage, wherein the filter device has a drum (16) pivoted around a rotation axis (1), wherein the filter device has numerous filter disks (2) running parallel to one another, attached to the drum (16) and that can be made to rotate together with it with the help of a driving device (3), whereby the filter disks (2) have, in each case, filter surfaces (4) running parallel to one another that delimit several hollow spaces (5) arranged in circumferential direction of the respective filter disk (2) and preferably in fluid connection to one another, in which case the hollow spaces (5) are in fluid connection with the drum (6) through one or several inlet openings (6), so that the liquid to be filtered can flow out to the exterior, starting from the interior of the drum (16) through the inlet openings (6) into the hollow spaces (5) and the filtrate can flow from there to the exterior via the filter surfaces (4).

Abstract: A device and a method for continuous chemical vapour deposition under atmospheric pressure on substrates. The device is hereby based on a reaction chamber, along the open sides of which the substrates are guided, as a result of which the corresponding coatings can be effected on the side of the substrates which is orientated towards the chamber interior.

Abstract: The invention relates to a device and a method for continuous chemical vapor deposition under atmospheric pressure on substrates. The device is hereby based on a reaction chamber, along the open sides of which the substrates are guided, as a result of which the corresponding coatings can be effected on the side of the substrates which is orientated towards the chamber interior.

Abstract: The invention relates to a method for continuous coating of substrates, in which the substrates are transported continuously through a deposition chamber and, at the same time, measures are adopted for reducing parasitic deposits as well as possible. Likewise, the invention relates to a corresponding device for continuous coating of substrates.

Abstract: The invention relates to a retaining device for substrates to be coated, which device comprises a contact surface for the substrate to be coated. The retaining device is for example configured as a plate on which the substrate rests and which has one or more apertures, e.g. drilled holes, grooves etc. has, through which a pressure gradient can be set between the face of the substrate and the opposite face of the retaining device. In this way a temporary fixing of the substrate by suction onto the retaining device is possible. The invention also relates to a method for coating a substrate which uses the retaining device according to the invention.

Abstract: The present invention relates to a gas lock for separating two gas chambers, which while taking up minimal space makes it possible to achieve the separation of gases without contact with the product/educt/transporting system. The gas lock according to the invention is distinguished in that at least one means for manipulation of the flow is present in a flow passage of the gas lock. Also, the present invention relates to a coating device which comprises a gas lock according to the invention. Also provided are possibilities for using the gas lock according to the invention.

Abstract: The invention relates to a method for dry chemical treatment of substrates selected from the group comprising silicon, ceramic, glass, and quartz glass, in which the substrate is treated in a heated reaction chamber with a gas which contains hydrogen chloride as etching agent, and also to a substrate which can be produced in this way. The invention likewise relates to uses of the previously mentioned method.

Abstract: The present invention relates to a gas lock for separating two gas chambers, which while taking up minimal space makes it possible to achieve the separation of gases without contact with the product/educt/transporting system. The gas lock according to the invention is distinguished by the integration of a measuring chamber for measuring at least one physical and/or chemical property. Also, the present invention relates to a coating device which comprises a gas lock according to the invention. Also provided are possibilities for using the gas lock according to the invention.

Abstract: A method for simultaneous recrystallization and doping of semiconductor layers, in particular for the production of crystalline silicon thin layer solar cells. A substrate base layer 1 is produced, and subsequently, an intermediate layer system 2 which has at least one doped partial layer is deposited on the base layer. An absorber layer 3 which is undoped or likewise doped is deposited on the intermediate layer system 2, and in a recrystallisation step, the absorber layer 3 is heated, melted, cooled and tempered. Alternately, instead of an undoped capping layer, a capping layer system 4 which has at least one partial layer can also be applied on the absorber layer 3.

Abstract: The invention refers to a device for removing screenings from liquid flowing in a channel (1), especially from sewage (2), the device comprising a tilted screening drum (4) being at least partly immersed in the liquid, being drivable around a rotating axis with the help of a drive and having an open face (5) on the inflow side, the device further comprising an extractor for the screenings, preferably in form of a screw conveyor (11) or suction device (17), whereas the extractor is arranged at least partially inside the screening drum (4) and comprises a feeding section for the screenings, preferably in form of a feeding funnel (15), that is arranged inside the screening drum (4). According to the invention, it is suggested for the screening drum (4) to have a folded sieve wall (19).

Abstract: The invention refers to a device for removing floating material from a liquid, especially from sewage (2), with at least one sieve element shaped like a filter basket (4), for example, that in a front side has an inlet opening through which liquid can flow into the interior of the sieve element, and is equipped with a drive so the sieve element can rotate around a rotation axis. The invention suggests arranging a collection device (17) within the sieve element for collecting the liquid and/or floating material, in which case the collection device (17) is attached to a pumping-out device (20) for the liquid and/or the floating material. Another object of the invention is a process for removing floating material from a liquid, especially from sewage (2), in which case a sieve device is used that contains at least one sieve element that can be shaped like a filter basket (4), for example, and is equipped with a drive so it can rotate around a rotating axis.

Abstract: The invention describes photovoltaic tandem solar cells made of crystalline silicon and crystalline silicon carbide having an Si/C intermediate layer. Furthermore, the invention describes a method for the production of tandem solar cells.

Abstract: The invention refers to a filter segment for use in a filtration device, especially a rotating filter for filtering liquids with a frame element (1) made at least partly of plastic and a filtration surface enclosing it, in which at least a flat filter material (2) spanning the filtration surface is embedded. According to the invention, it is suggested that within the frame element (1) at least one reinforcement (3) is arranged, for example, like a reinforcement frame and/or individual reinforcing elements traversing the entire frame element (1).

Abstract: A method for simultaneous recrystallisation and doping of semiconductor layers, in particular for the production of crystalline silicon thin layer solar cells. A substrate base layer 1 is produced, and subsequently, an intermediate layer system 2 which has at least one doped partial layer is deposited on the base layer. An absorber layer 3 which is undoped or likewise doped is deposited on the intermediate layer system 2, and in a recrystallisation step, the absorber layer 3 is heated, melted, cooled and tempered. Alternately, instead of an undoped capping layer, a capping layer system 4 which has at least one partial layer can also be applied on the absorber layer 3.

Abstract: The present invention refers to a thin-film solar cell which is contacted from the rear-side. The invention is based on a combination of thin-film solar cells, e.g. wafer equivalents, with the emitter wrap-through (EWT) technology. The present invention also provides a process for manufacturing these solar cells.

Abstract: The invention relates to a method for simultaneous recrystallization and doping of semiconductor layers, in particular for the production of crystalline silicon thin layer solar cells. In this method, in a first step a substrate base layer 1 is produced, in a step subsequent thereto, on the latter an intermediate layer system 2 which has at least one doped partial layer is deposited, in a step subsequent thereto, an absorber layer 3 which is undoped or likewise doped is deposited on the intermediate layer system 2, and in a recrystallization step, the absorber layer 3 is heated, melted, cooled and tempered. In an advantageous method modification, instead of an undoped capping layer, a capping layer system 4 which has at least one partial layer can also be applied on the absorber layer 3.