Abstract: Disclosed herein is a memory arrangement and method thereof for locally marking bad memory cells. The memory arrangement includes a group of memory cells and a driver circuit for operating the group of memory cells. The driver circuit includes a remanent-polarizable memory element (e.g., a remanent-polarizable field-effect transistor). Depending on a memory state of the remanent-polarizable memory element, the driver circuit enables or disables the operation (e.g., a read/write operation) on the group of memory cells.

Abstract: Disclosed herein is a programmable delay circuit for providing an adjustable delay for a signal transmitted from an input node to an output node. The adjustable delay circuit includes an input node; an output node; and a pair of inverter circuits coupled in series between the input node and the output node, wherein the pair of inverter circuits is configured to provide an adjustable delay for a signal transmitted from the input node to the output node. At least one inverter circuit of the pair of inverter circuits includes a state-programmable memory element that allows the pair of inverter circuits to be configurable between a first delay mode or a second delay mode.

Abstract: Disclosed herein is a programmable delay circuit for providing an adjustable delay for a signal transmitted from an input node to an output node. The adjustable delay circuit includes a state-programmable memory element that may be programmed to a first state to provide a first delay as the adjustable delay or programmed to a second state to provide a second delay as the adjustable delay. The state-programmable memory element may be a remanent polarizable capacitor that may be programmed to at least two different remanent polarization states to configure the first delay or the second delay.

Abstract: Disclosed herein is an adaptive voltage regulator that includes a voltage regulator circuit configured to provide a regulated output voltage at an output node of the adaptive voltage regulator circuit. The adaptive voltage regulator also includes an adaptation circuit coupled to the output node that is configured to adapt a charging characteristic associated with a charging of the output node to a predefined output voltage as a function of a load coupled to the output node. The adaption circuit may be configured to selectively provide additional charging current that charges the output node to the predefined output voltage depending on the load.

Abstract: Various aspects relate to a multiply and accumulate circuit, the multiply and accumulate circuit including: a plurality of multiply operation cells configured in a matrix arrangement. A respective multiply operation cell of the multiply operation cells includes: a field-effect transistor and a programmable switch in a series connection, wherein the field-effect transistor and the programmable switch are configured to control a current flow through the respective multiply operation cell to realize a multiplication operation. The multiply operation cells of a set of the plurality of multiply operation cells share a corresponding control line to realize an accumulation operation in addition to the multiply operations carried out by the set of multiply operation cells.

Abstract: Various aspects relate to a memory cell including: a field-effect transistor memory structure, wherein a source/drain current through the field-effect transistor memory structure is a function of a gate voltage supplied to a gate of the field-effect transistor memory structure and a memory state in which the field-effect transistor memory structure is residing in; and an access device coupled to the gate of the field-effect transistor memory structure, wherein the access device is configured to control a voltage present at the gate of the field-effect transistor memory structure.

Abstract: Provided herein may be a method for controlling program verify operations of a non-volatile memory and a corresponding circuit thereof. The method for controlling a program verify operation of a non-volatile memory, comprising: selecting a source line among source lines coupled to a plurality of planes respectively; measuring a voltage of the selected source line associated with target cells of the non-volatile memory to be verified in a first sensing operation; comparing the measured voltage of the selected source line with a reference voltage; and skipping the second sensing operation if the measured voltage of the selected source line is lower than the reference voltage.

Abstract: Provided herein may be a method for controlling program verify operations of a non-volatile memory and a corresponding circuit thereof. The method for controlling a program verify operation of a non-volatile memory, comprising: selecting a source line among source lines coupled to a plurality of planes respectively; measuring a voltage of the selected source line associated with target cells of the non-volatile memory to be verified in a first sensing operation; comparing the measured voltage of the selected source line with a reference voltage; and skipping the second sensing operation if the measured voltage of the selected source line is lower than the reference voltage.

Abstract: A device for use with non-volatile memory, includes a first transistor of a first channel type coupled between first and second nodes, including a control gate supplied with a first control signal having a first phase, a second transistor of a second channel type different from the first channel type including a first terminal coupled to the first node, a second terminal coupled to a third node, a back gate coupled to the first terminal thereof, and a control gate supplied with a second control signal having a second phase substantially opposite to the first phase, a third transistor of the second channel type including a first terminal coupled to the second node, a second terminal coupled to the third node, a back gate coupled to the first terminal thereof, and a control gate supplied with the second control signal, and a protection circuit coupled between the first and second node.

Abstract: Devices, methods, and circuits for row driver architectures that can improve an existing row driver circuit including a boosting capacitor and a level shifter circuit. For example, the improvement can include a decoupling inverter that decouples the level shifter from the boosting capacitor, which can reduce the time for the row driver to turn on and drive appropriate voltages to the matrix array.

Abstract: A device for use with non-volatile memory, includes a first transistor of a first channel type coupled between first and second nodes, including a control gate supplied with a first control signal having a first phase, a second transistor of a second channel type different from the first channel type including a first terminal coupled to the first node, a second terminal coupled to a third node, a back gate coupled to the first terminal thereof, and a control gate supplied with a second control signal having a second phase substantially opposite to the first phase, a third transistor of the second channel type including a first terminal coupled to the second node, a second terminal coupled to the third node, a back gate coupled to the first terminal thereof, and a control gate supplied with the second control signal, and a protection circuit coupled between the first and second node.

Abstract: A method (and device) includes producing first data in a page region of a memory, the first data including a first number of memory sets, each of the memory sets having a second number of bits, where the first number is a positive number more than one and the second number is a positive number more than three. After the producing the first data in the page region of the memory, second data is produced in response to the produced first data, the second data having the first number of bits, each of the bits of the second data having a logic value that is determined by a majority of the bits included in a corresponding one of the memory sets.

Abstract: A device includes a first transistor coupled between first and second nodes, and including a control gate supplied with a first control signal, a second transistor coupled between the first node and a third node, and including a control gate supplied with the first control signal, a third transistor coupled between the third node and a fourth node, and including a control gate supplied with a second control signal, a fourth transistor coupled between the fourth node and a fifth node, and including a control gate supplied with the second control signal, and a fifth transistor coupled between the fifth node and the second nodes, and including a control gate supplied with the first control signal. Each of the second and fifth transistors is smaller in threshold voltage than the first transistor.

Abstract: A method (and device) includes producing first data in a page region of a memory, the first data including a first number of memory sets, each of the memory sets having a second number of bits, where the first number is a positive number more than one and the second number is a positive number more than three. After the producing the first data in the page region of the memory, second data is produced in response to the produced first data, the second data having the first number of bits, each of the bits of the second data having a logic value that is determined by a majority of the bits included in a corresponding one of the memory sets.

Abstract: Devices, methods, and circuits for row driver architectures that can improve an existing row driver circuit including a boosting capacitor and a level shifter circuit. For example, the improvement can include a decoupling inverter that decouples the level shifter from the boosting capacitor, which can reduce the time for the row driver to turn on and drive appropriate voltages to the matrix array.

Abstract: Devices and circuits for row driver architectures that can improve an existing row driver circuit including a boosting capacitor and a level shifter circuit. For example, the improvement can include a decoupling inverter that decouples the level shifter from the boosting capacitor, which can reduce the time for the row driver to turn on and drive appropriate voltages to the matrix array.

Abstract: A device includes a first transistor coupled between first and second nodes, and including a control gate supplied with a first control signal, a second transistor coupled between the first node and a third node, and including a control gate supplied with the first control signal, a third transistor coupled between the third node and a fourth node, and including a control gate supplied with a second control signal, a fourth transistor coupled between the fourth node and a fifth node, and including a control gate supplied with the second control signal, and a fifth transistor coupled between the fifth node and the second nodes, and including a control gate supplied with the first control signal. Each of the second and fifth transistors is smaller in threshold voltage than the first transistor.

Abstract: Disclosed herein is a device that includes a first transistor coupled between an input terminal and an output terminal and including a control gate, a voltage-generating circuit configured to produce a voltage at the control gate of the first transistor, and a discharge circuit coupled between the input terminal of the first transistor and the control gate of the first transistor, the discharge circuit responding to a discharge signal to perform a discharge operation such that an electrical charge is discharged from the output terminal to the input terminal of the first transistor.

Abstract: A semiconductor device includes a first bonding pad, a second bonding pad, a wire bonded to a selected one of the first and second bonding pads, a power supply line electrically connected to the first bonding pad, and a voltage converter circuit coupled to the second bonding pad, the voltage converter circuit being activated when the wire is bonded to the second pad to produce an internal power voltage, which is different from a voltage received by the voltage converter circuit through the wire and the second bonding pad, and supply the internal power voltage to the power supply line, and the voltage converter circuit being deactivated when the wire is connected to the first bonding pad to allow the power supply line to receive a power voltage through the wire and the first bonding pad.

Abstract: Disclosed herein is a device that includes at least one selection/non-selection voltage receiving line, at least one word line operatively coupled to the selection/non-selection voltage receiving line, and a plurality of memory cells coupled to the word line; a selection voltage source line; and a selection voltage supply circuit comprising a first switch circuit and a first driver circuit driving the first switch circuit to be turned ON or OFF, the first switch circuit including a first node coupled to the selection voltage source line, a second node coupled to the selection/non-selection voltage receiving line of the first memory plane and a third node coupled to the selection/non-selection voltage receiving line of the second memory plane, and the first driver circuit being provided in common to the first and second memory planes.