Abstract: Disclosed herein are systems and methods for reducing surface recombination losses in micro-LEDs. In some embodiments, a method includes increasing a bandgap in an outer region of a semiconductor layer by implanting ions in the outer region of the semiconductor layer and subsequently annealing the outer region of the semiconductor layer to intermix the ions with atoms within the outer region of the semiconductor layer. The semiconductor layer includes an active light emitting layer. A light outcoupling surface of the semiconductor layer has a diameter of less than 10 ?m. The outer region of the semiconductor layer extends from an outer surface of the semiconductor layer to a central region of the semiconductor layer that is shaded by a mask during the implanting of the ions.

Abstract: Techniques disclosed herein relate to micro light emitting diodes (micro-LEDs) for a display system. A display system includes an array of micro light emitting diodes (micro-LEDs), an array of output couplers optically coupled to the array of micro-LEDs and configured to extract light emitted by respective micro-LEDs in the array of micro-LEDs, a waveguide display, and display optics configured to couple the light emitted by the array of micro-LEDs and extracted by the array of output couplers into the waveguide display. Each output coupler in the array of output couplers is configured to direct a chief ray of the light emitted by a respective micro-LED in the array of micro-LEDs to a different respective direction.

Abstract: Disclosed herein are light emitting diodes (LEDs) having a high efficiency. A light emitting diode including an active light emitting layer within a semiconductor layer is provided. The semiconductor layer has a mesa shape. The light emitting diode also includes a substrate having a first surface on which the semiconductor layer is positioned and an outcoupling surface opposite to the first surface. Light generated by the active light emitting layer is incident on the outcoupling surface and propagates toward an optical element downstream of the outcoupling surface. The light emitting diode also includes a first anti-reflection coating adjacent to the outcoupling surface; an index-matched material between the outcoupling surface and the optical element, wherein an index of refraction of the index-matched material is greater than or equal to an index of refraction of the optical element; and/or secondary optics adjacent to the outcoupling surface.

Abstract: A pupil-replicating waveguide suitable for operation with a coherent light source is disclosed. A waveguide body has opposed surfaces for guiding a beam of image light. An out-coupling element is disposed in an optical path of the beam for out-coupling portions of the beam at a plurality of spaced apart locations along the optical path. Electrodes are coupled to at least a portion of the waveguide body for modulating an optical path length of the optical path of the beam to create time-varying phase delays between the portions of the beam out-coupled by the out-coupling element.

Abstract: A emitting diode (LED) includes an epitaxial structure defining a base and a mesa on the base. The base defines a light emitting surface of the LED and includes current spreading layer. The mesa includes a thick confinement layer, a light generation area on the thick confinement layer to emit light, a thin confinement layer on the light generation area, and a contact layer on the thin confinement layer, the contact layer defining a top of the mesa. A reflective contact is on the contact layer to reflect a portion of the light emitted from the light generation area, the reflected light being collimated at the mesa and directed through the base to the light emitting surface. In some embodiments, the epitaxial structure grown on a non-transparent substrate. The substrate is removed, or used to form an extended reflector to collimate light.

Abstract: A emitting diode (LED) includes an epitaxial structure defining a base and a mesa on the base. The base defines a light emitting surface of the LED and includes current spreading layer. The mesa includes a thick confinement layer, a light generation area on the thick confinement layer to emit light, a thin confinement layer on the light generation area, and a contact layer on the thin confinement layer, the contact layer defining a top of the mesa. A reflective contact is on the contact layer to reflect a portion of the light emitted from the light generation area, the reflected light being collimated at the mesa and directed through the base to the light emitting surface. In some embodiments, the epitaxial structure grown on a non-transparent substrate. The substrate is removed, or used to form an extended reflector to collimate light.

Abstract: Disclosed herein are techniques for bonding components of LEDs. According to certain embodiments, a method includes performing p-side processing of a first component. The p-side processing is performed from a direction adjacent to a surface of a p-side semiconductor layer of the first component that is opposite to an active light emitting layer of the first component. The method also includes aligning first contacts of the first component with second contacts of the second component, and subsequently performing hybrid bonding of the first component to the second component by performing dielectric bonding of a first dielectric material of the first component with a second dielectric material of the second component at a first temperature, and subsequently performing metal bonding of the first contacts of the first component with the second contacts of the second component by annealing the first contacts and the second contacts at a second temperature.

Abstract: Disclosed herein are techniques for bonding components of LEDs. According to certain embodiments, a micro-LED includes a first component having a semiconductor layer stack including an n-side semiconductor layer, an active light emitting layer, and a p-side semiconductor layer. The semiconductor layer stack includes a III-V semiconductor material. The micro-LED also includes a second component having a passive or an active matrix integrated circuit within a Si layer. A first dielectric material of the first component is bonded to a second dielectric material of the second component, first contacts of the first component are aligned with and bonded to second contacts of the second component, a surface recombination velocity (SRV) of the micro-LED is less than or equal to 3E4 cm/s, and an e-h diffusion of the micro-LED is less than or equal to 20 cm2/s.

Abstract: Disclosed herein are techniques for bonding components of LEDs. According to certain embodiments, a device includes a first component and a second component. The first component includes a semiconductor layer stack having an n-side semiconductor layer, an active light emitting layer, and a p-side semiconductor layer. The semiconductor layer stack includes a III-V semiconductor material. The second component includes a passive or an active matrix integrated circuit within a Si layer. A first dielectric material of the first component is bonded to a second dielectric material of the second component. First contacts of the first component are aligned with and bonded to second contacts of the second component. The first contacts of the first component form a first pattern within the first dielectric material of the first component, and the second contacts of the second component form a second pattern within the second dielectric material of the second component.

Abstract: Disclosed herein are techniques for bonding components of LEDs. According to certain embodiments, a device includes a first component having a semiconductor layer stack including an n-side semiconductor layer, an active light emitting layer, and a p-side semiconductor layer. A plurality of mesa shapes are formed within the n-side semiconductor layer, the active light emitting layer, and the p-side semiconductor layer. The semiconductor layer stack comprises a III-V semiconductor material. The device also includes a second component having a passive or an active matrix integrated circuit within a Si layer. A first dielectric material of the first component is bonded to a second dielectric material of the second component, first contacts of the first component are aligned with and bonded to second contacts of the second component, and a run-out between the first contacts and the second contacts is less than 200 nm.

Abstract: Disclosed herein are methods, systems, and apparatuses for an light emitting diode (LED) array apparatus. In some embodiments, the LED array apparatus may include a plurality of mesas etched from a layered epitaxial structure. The layered epitaxial structure may include a P-type doped semiconductor layer, a active layer, and an N-type doped semiconductor layer. The LED array apparatus may also include one or more regrowth semiconductor layers, including a first regrowth semiconductor layer, which may be grown epitaxially over etched facets of the plurality of mesas. In some cases, for each mesa, the first regrowth semiconductor layer may overlay etched facets of the P-type doped semiconductor layer, the active layer, and the N-type doped semiconductor layer, around an entire perimeter of the mesa.

Abstract: A pupil-replicating waveguide suitable for operation with a coherent light source is disclosed. A waveguide body has opposed surfaces for guiding a beam of image light. An out-coupling element is disposed in an optical path of the beam for out-coupling portions of the beam at a plurality of spaced apart locations along the optical path. Electrodes are coupled to at least a portion of the waveguide body for modulating an optical path length of the optical path of the beam to create time-varying phase delays between the portions of the beam out-coupled by the out-coupling element.

Abstract: A pupil-replicating waveguide suitable for operation with a coherent light source is disclosed. A waveguide body has opposed surfaces for guiding a beam of image light. An out-coupling element is disposed in an optical path of the beam for out-coupling portions of the beam at a plurality of spaced apart locations along the optical path. Electrodes are coupled to at least a portion of the waveguide body for modulating an optical path length of the optical path of the beam to create time-varying phase delays between the portions of the beam out-coupled by the out-coupling element.

Abstract: Disclosed herein are systems and methods for reducing surface recombination losses in micro-LEDs. In some embodiments, a method includes increasing a bandgap in an outer region of a semiconductor layer by implanting ions in the outer region of the semiconductor layer and subsequently annealing the outer region of the semiconductor layer to intermix the ions with atoms within the outer region of the semiconductor layer. The semiconductor layer includes an active light emitting layer. A light outcoupling surface of the semiconductor layer has a diameter of less than 10 ?m. The outer region of the semiconductor layer extends from an outer surface of the semiconductor layer to a central region of the semiconductor layer that is shaded by a mask during the implanting of the ions.

Abstract: A pupil-replicating waveguide suitable for operation with a coherent light source is disclosed. A waveguide body has opposed surfaces for guiding a beam of image light. An out-coupling element is disposed in an optical path of the beam for out-coupling portions of the beam at a plurality of spaced apart locations along the optical path. Electrodes are coupled to at least a portion of the waveguide body for modulating an optical path length of the optical path of the beam to create time-varying phase delays between the portions of the beam out-coupled by the out-coupling element.

Abstract: A layer structure for a normally-off transistor has an electron-supply layer made of a group-III-nitride material, a back-barrier layer made of a group-III-nitride material, a channel layer between the electron-supply layer and the back-barrier layer, made of a group-III-nitride material having a band-gap energy that is lower than the band-gap energies of the other layer mentioned. The material of the back-barrier layer is of p-type conductivity, while the material of the electron-supply layer and the material of the channel layer are not of p-type conductivity, the band-gap energy of the electron-supply layer is smaller than the band-gap energy of the back-barrier layer. In absence of an external voltage a lower conduction-band-edge of the third group-III-nitride material in the channel layer is higher in energy than a Fermi level of the material in the channel layer.

Abstract: Disclosed herein are systems and methods for reducing surface recombination losses in micro-LEDs. In some embodiments, a method includes reducing a lateral carrier diffusion in an outer region of a semiconductor layer by implanting ions in the outer region of the semiconductor layer. The semiconductor layer includes an active light emitting layer. An outcoupling surface of the semiconductor layer has a diameter of less than 10 ?m. The outer region of the semiconductor layer extends from an outer surface of the semiconductor layer to a central region of the semiconductor layer that is shaded by a mask during the implanting of the ions.

Abstract: A emitting diode (LED) includes an epitaxial structure defining a base and a mesa on the base. The base defines a light emitting surface of the LED and includes current spreading layer. The mesa includes a thick confinement layer, a light generation area on the thick confinement layer to emit light, a thin confinement layer on the light generation area, and a contact layer on the thin confinement layer, the contact layer defining a top of the mesa. A reflective contact is on the contact layer to reflect a portion of the light emitted from the light generation area, the reflected light being collimated at the mesa and directed through the base to the light emitting surface. In some embodiments, the epitaxial structure grown on a non-transparent substrate. The substrate is removed, or used to form an extended reflector to collimate light.

Abstract: Disclosed herein are systems and methods for reducing surface recombination losses in micro-LEDs. In some embodiments, a method includes increasing a bandgap in an outer region of a semiconductor layer by implanting ions in the outer region of the semiconductor layer and subsequently annealing the outer region of the semiconductor layer to intermix the ions with atoms within the outer region of the semiconductor layer. The semiconductor layer includes an active light emitting layer. A light outcoupling surface of the semiconductor layer has a diameter of less than 10 ?m. The outer region of the semiconductor layer extends from an outer surface of the semiconductor layer to a central region of the semiconductor layer that is shaded by a mask during the implanting of the ions.

Abstract: Disclosed herein are light emitting diodes (LEDs) having a high efficiency. A light emitting diode including an active light emitting layer within a semiconductor layer is provided. The semiconductor layer has a mesa shape. The light emitting diode also includes a substrate having a first surface on which the semiconductor layer is positioned and an outcoupling surface opposite to the first surface. Light generated by the active light emitting layer is incident on the outcoupling surface and propagates toward an optical element downstream of the outcoupling surface. The light emitting diode also includes a first anti-reflection coating adjacent to the outcoupling surface; an index-matched material between the outcoupling surface and the optical element, wherein an index of refraction of the index-matched material is greater than or equal to an index of refraction of the optical element; and/or secondary optics adjacent to the outcoupling surface.