Abstract: A layer structure for a normally-off transistor has an electron-supply layer made of a group-III-nitride material, a back-barrier layer made of a group-III-nitride material, a channel layer between the electron-supply layer and the back-barrier layer, made of a group-III-nitride material having a band-gap energy that is lower than the band-gap energies of the other layer mentioned. The material of the back-barrier layer is of p-type conductivity, while the material of the electron-supply layer and the material of the channel layer are not of p-type conductivity, the band-gap energy of the electron-supply layer is smaller than the band-gap energy of the back-barrier layer. In absence of an external voltage a lower conduction-band-edge of the third group-III-nitride material in the channel layer is higher in energy than a Fermi level of the material in the channel layer.

Abstract: An optoelectronic semiconductor chip, based on a nitride material system, comprising at least one active quantum well, wherein during operation electromagnetic radiation is generated in the active quantum well, the active quantum well comprises N successive zones in a direction parallel to a growth direction z of the semiconductor chip, N being a natural number greater than or equal to 2, the zones are numbered consecutively in a direction parallel to the growth direction z, at least two of the zones have average aluminium contents k which differ from one another, and the active quantum well fulfils the condition: 50??(35?k(z))dz?2.5N?1.5?dz?120.

Abstract: An optoelectronic semiconductor chip, based on a nitride material system, comprising at least one active quantum well, wherein during operation electromagnetic radiation is generated in the active quantum well, the active quantum well comprises N successive zones in a direction parallel to a growth direction z of the semiconductor chip, N being a natural number greater than or equal to 2, the zones are numbered consecutively in a direction parallel to the growth direction z, at least two of the zones have average aluminium contents k which differ from one another, and the active quantum well fulfils the condition: 50??(35?k(z))dz?2.5N?1.5?dz?120.

Abstract: In at least one embodiment of the optoelectronic semiconductor chip (1), the latter is based on a nitride material system and comprises at least one active quantum well (2). The at least one active quantum well (2) is designed to generate electromagnetic radiation when in operation. Furthermore, the at least one active quantum well (2) comprises N successive zones (A) in a direction parallel to a growth direction z of the semiconductor chip (1), N being a natural number greater than or equal to 2. At least two of the zones (A) of the active quantum well (2) have mutually different average indium contents c. Furthermore the at least one active quantum well (2) fulfills the condition: 40??c(z)dz?2.5N?1.5?dz?80.

Abstract: In at least one embodiment of the semiconductor laser light source, the latter includes a carrier and at least two semiconductor lasers. The semiconductor lasers are mounted on a carrier top. The semiconductor laser light source furthermore includes at least one optical component, which is arranged downstream of at least one of the semiconductor lasers in a direction of emission. The semiconductor lasers and the optical component are housed tightly in a common enclosure by way of a cover. The dimensions of the enclosure, viewed in three orthogonal spatial directions, amount in each case to at most 8 mm×8 mm×7 mm.

Abstract: In at least one embodiment of the semiconductor laser light source, the latter includes a carrier and at least two semiconductor lasers. The semiconductor lasers are mounted on a carrier top. The semiconductor laser light source furthermore includes at least one optical component, which is arranged downstream of at least one of the semiconductor lasers in a direction of emission. The semiconductor lasers and the optical component are housed tightly in a common enclosure by way of a cover. The dimensions of the enclosure, viewed in three orthogonal spatial directions, amount in each case to at most 8 mm×8 mm×7 mm.

Abstract: An optoelectronic semiconductor component has a semiconductor body (1) comprising a surface emitting vertical emitter region (2) comprising a vertical emitter layer (3), at least one pump source (4) provided for optically pumping the vertical emitter layer (3), and a radiation passage area (26) through which electromagnetic radiation (31) generated in the vertical emitter layer leaves the semiconductor body (1), wherein the pump source (4) and the vertical emitter layer (3) are at a distance from one another in a vertical direction.

Abstract: The invention relates to an edge-emitting semiconductor laser comprising a semiconductor body (10), which comprises a waveguide region (4), wherein the waveguide region (4) comprises a first waveguide layer (2A), a second waveguide layer (2B) and an active layer (3) arranged between the first waveguide layer (2A) and the second waveguide layer (2B) and serving for generating laser radiation (5), and the waveguide region (4) is arranged between a first cladding layer (1A) and a second cladding layer (1B) disposed downstream of the waveguide region (4) in the growth direction of the semiconductor body (10).

Abstract: A surface emitting semiconductor body with a vertical emission direction is specified, which is provided for operation with a resonator and comprises a semiconductor layer sequence with an active region, wherein the semiconductor body is embodied in wavelength-stabilizing fashion in such a way that a peak wavelength of the radiation generated in the active region, in a predetermined operating range of the semiconductor body, is stabilized with respect to changes in the output power of the radiation generated in the active region.

Abstract: A method for production of a plurality of semiconductor chips (6) in a wafer composite. A semiconductor layer sequence (2) is grown on a growth substrate (1), metallization (3) is applied to the semiconductor layer sequence (2), a metal layer (4) is electrochemically deposited onto the metallization (3), and the semiconductor layer sequence (2) is then structured and separated to form individual semiconductor chips (6). The electrochemically applied metal layer (4) is particularly suitable for use as a heat spreader, for dissipation of the heat produced by the semiconductor chips (6).

Abstract: The invention relates to an edge-emitting semiconductor laser comprising a semiconductor body (10), which comprises a waveguide region (4), wherein the waveguide region (4) comprises a first waveguide layer (2A), a second waveguide layer (2B) and an active layer (3) arranged between the first waveguide layer (2A) and the second waveguide layer (2B) and serving for generating laser radiation (5), and the waveguide region (4) is arranged between a first cladding layer (1A) and a second cladding layer (1B) disposed downstream of the waveguide region (4) in the growth direction of the semiconductor body (10).

Abstract: An optoelectronic semiconductor chip (1) is herein described which comprises a non-planar growth layer (2), which contains at least one first nitride compound semiconductor material, and an active zone (5), which contains at least one second nitride compound semiconductor material and is arranged on the growth layer (2), and a top layer (7), which is arranged on the active zone (5), the growth layer (2) comprising structure elements (4) at a growth surface (3) facing the active zone (5).

Abstract: A semiconductor laser includes a semiconductor laser element that emits electromagnetic radiation with at least one fundamental wavelength when in operation, an end mirror, a deflecting mirror reflective as a function of polarization located between the semiconductor laser element and the end mirror, and at least one optically nonlinear crystal configured for type II frequency conversion of the fundamental wavelength and which satisfies a ?/2 condition for the fundamental wavelength.

Abstract: A surface emitting semiconductor laser device comprising at least one surface emitting semiconductor laser (21) having a vertical emitter (1) and at least one pump radiation source (2), which are monolithically integrated alongside one another onto a common substrate (13), is described. The semiconductor laser device additionally has a heat-conducting element (18), which is in thermal contact with the semiconductor laser (21) and has a mounting area provided for mounting on a carrier (27). Methods for producing such a surface emitting semiconductor laser device are furthermore described.

Abstract: A surface-emitting semiconductor laser component is disclosed, having a resonator (3, 9), a semiconductor body (5) which comprises a layer sequence (4) which is intended for radiation production, a transparent, frequency-selective thermally conductive element (6) which makes thermal contact with a surface (5a) of the semiconductor body (5) through which radiation passes, and an optical bandpass filter (8) which is suitable for suppression of predeterminable resonator modes.

Abstract: A method for production of a plurality of semiconductor chips (6) in a wafer composite. A semiconductor layer sequence (2) is grown on a growth substrate (1), metallization (3) is applied to the semiconductor layer sequence (2), a metal layer (4) is electrochemically deposited onto the metallization (3), and the semiconductor layer sequence (2) is then structured and separated to form individual semiconductor chips (6). The electrochemically applied metal layer (4) is particularly suitable for use as a heat spreader, for dissipation of the heat produced by the semiconductor chips (6).

Abstract: A surface emitting semiconductor body with a vertical emission direction is specified, which is provided for operation with a resonator and comprises a semiconductor layer sequence with an active region, wherein the semiconductor body is embodied in wavelength-stabilizing fashion in such a way that a peak wavelength of the radiation generated in the active region, in a predetermined operating range of the semiconductor body, is stabilized with respect to changes in the output power of the radiation generated in the active region.

Abstract: An optoelectronic semiconductor component has a semiconductor body (1) comprising a surface emitting vertical emitter region (2) comprising a vertical emitter layer (3), at least one pump source (4) provided for optically pumping the vertical emitter layer (3), and a radiation passage area (26) through which electromagnetic radiation (31) generated in the vertical emitter layer leaves the semiconductor body (1), wherein the pump source (4) and the vertical emitter layer (3) are at a distance from one another in a vertical direction.

Abstract: A surface emitting semiconductor laser device comprising at least one surface emitting semiconductor laser (21) having a vertical emitter (1) and at least one pump radiation source (2), which are monolithically integrated alongside one another onto a common substrate (13), is described. The semiconductor laser device additionally has a heat-conducting element (18), which is in thermal contact with the semiconductor laser (21) and has a mounting area provided for mounting on a carrier (27). Methods for producing such a surface emitting semiconductor laser device are furthermore described.

Abstract: A semiconductor laser device comprising an optically pumped surface-emitting vertical emitter region (2) which has an active radiation-emitting vertical emitter layer (3) and has at least one monolithically integrated pump radiation source (5) for optically pumping the vertical emitter region (2), which has an active radiation-emitting pump layer (6). The pump layer (6) follows the vertical emitter layer (3) in the vertical direction and a conductive layer (13) is provided between the vertical emitter layer (3) and the pump layer (6). Furthermore, a contact (9) is applied on the side of the semiconductor laser device which is closer to the pump layer (6) than to the conductive layer (13). An electrical field can be applied between this contact (9) and the conductive layer (13) for generating pump radiation (7) by charge carrier injection.