Abstract: The present invention relates to a dielectric filling for electrical wiring planes of an integrated circuit. The electrical wiring of the integrated circuit comprises a base body on which track and passivation planes can already be disposed; a conductive layer which is disposed on the base body and is patterned in such a manner that it exhibits a first conductor track, a second conductor track and a trench between the first conductor track and the second conductor track; at least one dielectric layer is disposed on the conductive layer and at least partially fills the trench, the preferred material of the dielectric layer being the polymer material polybenzoxazole.

Abstract: A method for reducing polymer deposition on vertical surfaces of metal lines etched from a metallization layer disposed above a substrate. The method includes forming a hard mask layer above the metallization layer and providing a photoresist mask above the hard mask layer. The method further includes employing the photoresist mask to form a hard mask from the hard mask layer. The hard mask has patterns therein configured to form the metal lines in a subsequent plasma-enhanced metallization etch. There is also included removing the photoresist mask. Additionally, there is included performing the plasma-enhanced metallization etch employing the hard mask and an etchant source gas that includes Cl2 and at least one passivation-forming chemical, wherein the plasma-enhanced metallization etch is performed without employing photoresist to reduce the polymer deposition during the plasma-enhanced metallization etch.

Abstract: The invention describes a method for improving the readability of alignment marks on semiconductor wafers during multilayer metallization. Metal located in the alignment marks is etched back for the purpose of uncovering the edges of the alignment marks after the deposition of metal and subsequent CMP step. In the alternative, the oxide in the immediate vicinity of the alignment marks is etched back in a recess etching step until the metal in the alignment mark is partly uncovered.