Abstract: A method of forming a wafer level packaged circuit device includes forming a device wafer, the device wafer including a first group of one or more material layers left remaining in a first region of a substrate of the device wafer; and forming a cap wafer configured to be attached to the device wafer, the cap wafer including a second group of one or more material layers left remaining in a second region of a substrate of the cap wafer; wherein a combined thickness of the first and second groups of one or more material layers defines an integrated bond gap control structure upon bonding of the device wafer and the cap wafer.

Abstract: A structure for detecting electromagnetic radiation having a predetermined wavelength. The structure includes a device wafer having a sensing element disposed on a predetermined region of a surface of the device wafer responsive to the electromagnetic radiation. A cover wafer is provided having a region thereof transparent to the electromagnetic radiation for passing the electromagnetic radiation through the transparent region onto a surface of the sensing element. A bond gap spacer structure is provided for supporting the surface of the sensing element from an opposing surface of the transparent region of the cover wafer a distance less than a fraction of the predetermined wavelength when. the cover wafer is bonded to the device wafer.

Abstract: A method of forming a wafer level packaged circuit device includes forming a device wafer, the device wafer including a first group of one or more material layers left remaining in a first region of a substrate of the device wafer; and forming a cap wafer configured to be attached to the device wafer, the cap wafer including a second group of one or more material layers left remaining in a second region of a substrate of the cap wafer; wherein a combined thickness of the first and second groups of one or more material layers defines an integrated bond gap control structure upon bonding of the device wafer and the cap wafer.

Abstract: An electronic device and methods of manufacture thereof. One or more methods may include providing a lid wafer having a cavity and a surface surrounding the cavity and a device wafer having a detector device and a reference device. In certain examples, a solder barrier layer of titanium material may be deposited onto the surface of the lid wafer. The solder barrier layer of titanium material may further be activated to function as a getter. In various examples, the lid wafer and the device wafer may be bonded together using solder, and the solder barrier layer of titanium material may prevent the solder from contacting the surface of the lid wafer.

Abstract: A getter structure and method wherein a layer of seed material is deposited on a predetermined region of a surface of a structure under conditions to form a plurality of nucleation sites on a surface of the structure. The nucleation sites have an average height over the surface area of the predetermined region of less than one molecule thick. Subsequently a getter material is deposited over the surface to form a plurality of getter material members projecting outwardly from the nucleation sites.

Abstract: A method for forming a coating of material on selected portions of a surface of a substrate having a plurality of cavities, each cavity having outer, peripheral sidewalls extending outwardly from the surface. The method includes: providing a structure having a release agent thereon; contacting top surface of the wafer with the release agent to transfer portions of the release agent to the top surface of the wafer while bottom portions of the cavities remain spaced from the release agent to produce an intermediate structure; the release agent disposed on the top surface of the wafer and with the bottom portions of the cavities void of the release agent; exposing the intermediate structure to the material to blanket coat the material on both the release agent and the bottom portions of the cavities; and selectively removing the release agent together with the coating material while leaving the coating material on the bottom portions of the cavities.

Abstract: An electronic device and methods of manufacture thereof. One or more methods may include providing a lid wafer having a cavity and a surface surrounding the cavity and a device wafer having a detector device and a reference device. In certain examples, a solder barrier layer of titanium material may be deposited onto the surface of the lid wafer. The solder barrier layer of titanium material may further be activated to function as a getter. In various examples, the lid wafer and the device wafer may be bonded together using solder, and the solder barrier layer of titanium material may prevent the solder from contacting the surface of the lid wafer.

Abstract: A method for forming a coating of material on selected portions of a surface of a substrate having a plurality of cavities, each cavity having outer, peripheral sidewalls extending outwardly from the surface. The method includes: providing a structure having a release agent thereon; contacting top surface of the wafer with the release agent to transfer portions of the release agent to the top surface of the wafer while bottom portions of the cavities remain spaced from the release agent to produce an intermediate structure; the release agent disposed on the top surface of the wafer and with the bottom portions of the cavities void of the release agent; exposing the intermediate structure to the material to blanket coat the material on both the release agent and the bottom portions of the cavities; and selectively removing the release agent together with the coating material while leaving the coating material on the bottom portions of the cavities.

Abstract: According to one embodiment, a method includes receiving a light beam at an anti-reflective layer of optically transmissive material. The anti-reflective layer has an outer surface disposed within a recess of a protective layer of optically transmissive material, such that the outer surface is protected by the recess and the protective layer from being contacted. The outer surface is further disposed along an optical path of an optical device disposed inwardly from the outer surface. The anti-reflective layer has an average cross-sectional thickness that is less than an average cross-sectional thickness of the protective layer. The method further includes modulating the light beam using the anti-reflective layer.

Abstract: A method of forming a window cap wafer (WCW) structure for semiconductor devices includes machining a plurality of cavities into a front side of a first substrate; bonding the first substrate to a second substrate, at the front side of the first substrate; removing a back side of the first substrate so as to expose the plurality of cavities, thereby defining the WCW structure comprising the second substrate and a plurality of vertical supports comprised of material of the first substrate.

Abstract: An electronic device and methods of manufacture thereof. One or more methods may include providing a lid wafer having a cavity and a surface surrounding the cavity and a device wafer having a detector device and a reference device. In certain examples, a solder barrier layer of titanium material may be deposited onto the surface of the lid wafer. The solder barrier layer of titanium material may further be activated to function as a getter. In various examples, the lid wafer and the device wafer may be bonded together using solder, and the solder barrier layer of titanium material may prevent the solder from contacting the surface of the lid wafer.

Abstract: A method of forming a wafer level packaged circuit device includes forming a device wafer, the device wafer including a first group of one or more material layers left remaining in a first region of a substrate of the device wafer; and forming a cap wafer configured to be attached to the device wafer, the cap wafer including a second group of one or more material layers left remaining in a second region of a substrate of the cap wafer; wherein a combined thickness of the first and second groups of one or more material layers defines an integrated bond gap control structure upon bonding of the device wafer and the cap wafer.

Abstract: According one embodiment, a millimeter-wave radiation imaging array includes a plurality of antenna elements configured to receive millimeter-wave radiative input. Each lenslet of a plurality of lenslets are coupled to one of the plurality of antenna elements such that no air exists between each lenslet and the one of the plurality of antenna elements. Each lenslet has a spherical portion being operable to direct the radiative input towards the one of the plurality of antenna elements. An energy detector is coupled to the plurality of antenna elements opposite the plurality of lenslets and operable to measure the radiative input received by the plurality of antenna elements.

Abstract: In accordance with particular embodiments, a method for packaging an incident radiation detector includes depositing an opaque solder resistant material on a first surface of a transparent lid substrate configured to cover at least one detector. The method also includes forming at least one cavity in the lid substrate. The method further includes forming a first portion of at least one hermetic seal ring on the opaque solder resistant material. The first portion of each hermetic seal ring surrounds a perimeter of a corresponding cavity in the lid substrate. The method also includes aligning the first portion of the at least one hermetic seal ring with a second portion of the at least one hermetic seal ring. The method additionally includes bonding the first portion of the at least one hermetic seal ring with the second portion of the at least one hermetic seal ring with solder.

Abstract: A method of forming a wafer level packaged circuit device includes forming a device wafer, the device wafer including a first group of one or more material layers left remaining in a first region of a substrate of the device wafer; and forming a cap wafer configured to be attached to the device wafer, the cap wafer including a second group of one or more material layers left remaining in a second region of a substrate of the cap wafer; wherein a combined thickness of the first and second groups of one or more material layers defines an integrated bond gap control structure upon bonding of the device wafer and the cap wafer.

Abstract: A wafer level vacuum packaged (WLVP) device having a first substrate having an array of detectors and a second substrate bonded to the first substrate having a plurality of protrusions and a plurality of getter material members projecting outwardly from a sidewall of the protrusions members are disposed at oblique angles to the sidewalls and have ends extending into gaps between the protrusions. The device is formed by: forming protrusions into a surface of a substrate; and depositing getter material by physical vapor deposition from an evaporating source of the getter material at an oblique angle to the sidewalls, atoms of the getter material initially forming nucleation sites on the sidewalls with subsequent atoms attaching to the nucleation sites and shadowing area surrounding each nucleation site, the getter material thereby growing into structures towards the evaporating source.

Abstract: A method of forming a wafer level packaged circuit device includes forming a device wafer, the device wafer including a first group of one or more material layers left remaining in a first region of a substrate of the device wafer; and forming a cap wafer configured to be attached to the device wafer, the cap wafer including a second group of one or more material layers left remaining in a second region of a substrate of the cap wafer; wherein a combined thickness of the first and second groups of one or more material layers defines an integrated bond gap control structure upon bonding of the device wafer and the cap wafer.

Abstract: A method of forming a wafer level packaged circuit device includes forming a device wafer, the device wafer including a first group of one or more material layers left remaining in a first region of a substrate of the device wafer; and forming a cap wafer configured to be attached to the device wafer, the cap wafer including a second group of one or more material layers left remaining in a second region of a substrate of the cap wafer; wherein a combined thickness of the first and second groups of one or more material layers defines an integrated bond gap control structure upon bonding of the device wafer and the cap wafer.

Abstract: Methods for reducing wafer bow induced by an anti-reflective coating of a cap wafer are provided. The method may utilize a shadow mask having at least one opening therein that is positioned opposite recessed regions in a cap wafer. The method may further include depositing at least one layer of an anti-reflective coating material through the shadow mask onto a planar side of a cap wafer to provide a discontinuous coating on the planar side.

Abstract: A receiver chip for use in an imaging system includes a plurality of receiver dies, each of the receiver dies comprising one or more receiver circuits; a die interconnection layer located on top of the plurality of receiver dies; a quarter wave dielectric layer located on top of the die interconnection layer; and a plurality of antennae located on the quarter wave dielectric layer, each of the plurality of antennae corresponding to a respective receiver circuit, wherein the plurality of antennae are connected to the one or more receiver circuits through the quarter wave dielectric layer and the die interconnection layer by respective vias, such that a distance between a topmost layer of the die interconnection layer and the plurality of antennae is determined by a thickness of the quarter wave dielectric layer.