Abstract: A power gate includes a series of electrical contacts along at least a portion of an integrated circuit and a series of power gate transistors electrically coupled to the electrical contacts on the integrated circuit to form a power gate boundary, e.g., at the integrated circuit periphery. The electrical contacts along at least a portion of a running length of the power gate boundary define a substantially non-linear profile. The non-linear profile provides increased contact density which improves current balancing across the electrical contacts and current throughput through the power gate. The non-linear profile is a sinusoidal or zigzag pattern with intermediate offset bump contacts. The contact profiles along the power gate boundary can include both linear and non-linear profiles.

Abstract: Various circuit board voltage regulators and methods of making and using the same are disclosed. In one aspect, a method of manufacturing is provided that includes fabricating at least one inductor in a circuit board and coupling a semiconductor chip to the circuit board. The at least one inductor is electrically coupled to the semiconductor chip. Regulator logic is electrically coupled to the at least one inductor, the regulator logic and the at least one inductor are operable to deliver a regulated voltage to the semiconductor chip.

Abstract: A method, apparatus, computer chip, circuit board, computer and system are provided in which data is stored in a low-voltage, maskable memory. Also provided is a computer readable storage device encoded with data for adapting a manufacturing facility to create an apparatus. The method includes storing a data value in a memory cell in a storage device if a first access parameter associated with the memory cell matches a first pre-determined value and if a second access parameter associated with the memory cell matches a second pre-determined value. The method also includes maintaining a data value in the memory cell in the storage device if the first access parameter differs from the first pre-determined value. The apparatus includes a first and second pair of access parameter ports operatively coupled together and associated with a first and second access parameter respectively.

Abstract: An integrated circuit (IC) is disclosed. The IC includes a first global voltage node and a second global voltage node. The IC further includes two or more power domains each coupled to the first global voltage node. Each of the two or more power domains includes a functional unit and a local voltage node coupled to the functional unit. Each of the plurality of power domains further includes a power-gating transistor coupled between the local voltage node and the second global voltage node, and an ESD (electrostatic discharge) circuit configured to detect an occurrence of an ESD event and further configured to cause activation of the transistor responsive to detecting the ESD event.

Abstract: Circuits for measuring and characterizing random variations in device characteristics of integrated circuit devices.

Abstract: Circuits and methods for measuring and characterizing random variations in device characteristics of semiconductor integrated circuit devices, which enable circuit designers to accurately measure and characterize random variations in device characteristics (such as transistor threshold voltage) between neighboring devices resulting from random sources such as dopant fluctuations and line edge roughness, for purposes of integrated circuit design and analysis. In one aspect, a method for characterizing random variations in device mismatch (e.g., threshold voltage mismatch) between a pair of device (e.g., transistors) is performed by obtaining subthreshold DC voltage characteristic data for the device pair, and then determining a distribution in voltage threshold mismatch for the device pair directly from the corresponding subthreshold DC voltage characteristic data.

Abstract: A device that includes an electronic device referred to as an integrated circuit interposer is disclosed. The integrated circuit includes a voltage regulator module. The interposer is attached to an electronic device, such as another integrated circuit, and facilitates control and distribution of power to the electronic device. The integrated circuit interposer can also conduct signaling between the attached electronic device and another electronic device. The voltage regulator module at the integrated circuit interposer can be configured to provide a voltage reference signal to the attached electronic device. Generation of the voltage reference signal by the integrated circuit interposer can be enabled or disabled and the value of the voltage reference signal can be adjusted, depending on operating requirements of the electronic device.

Abstract: Power supply variations and jitter are measured by monitoring the performance of a ring oscillator on a cycle-by-cycle basis. Performance is measured by counting the number of stages of the ring oscillator that are traversed during the clock cycle and mapping the number of stages traversed to a particular voltage level. Counters are used to count the number of ring oscillator revolutions and latches are used to latch the state of the ring oscillator at the end of the cycle. Based on the counters and latches, a monitor output is generated that may also incorporate an adjustment for a reset delay associated with initializing the ring oscillator and counters to a known state.

Abstract: An integrated circuit (IC) is disclosed. The IC includes a first global voltage node and a second global voltage node. The IC further includes two or more power domains each coupled to the first global voltage node. Each of the two or more power domains includes a functional unit and a local voltage node coupled to the functional unit. Each of the plurality of power domains further includes a power-gating transistor coupled between the local voltage node and the second global voltage node, and an ESD (electrostatic discharge) circuit configured to detect an occurrence of an ESD event and further configured to cause activation of the transistor responsive to detecting the ESD event.

Abstract: A Circuit architecture and a method for rapid and accurate statistical characterization of the variations in the electrical characteristics of CMOS process structures, MOS devices and Circuit parameters is provided. The proposed circuit architecture and method enables a statistical characterization throughput of <1 ms/DC sweep at <2 mV or <1 nA resolution accuracy of variations in voltage or current of the device under test. Salient features of proposed circuit architecture include a programmable ramp voltage generator that stimulates the device under test, a dual input 9-11 bit cyclic ADC that captures input and output DC voltage/current signals to/from the device under test, a 2 Kb latch bank that captures 9-11 bit streams for each measurement point in a DC sweep of programmable granularity and a clocking and control scheme that enables continuous measurement and stream out of digital data blocks from which the analog characteristics of the devices under test are reconstructed post measurement.

Abstract: An IC structure having reduced power loss and/or noise includes two or more active semiconductor regions stacked in a substantially vertical dimension, each active semiconductor region including an active layer. The IC structure further includes two or more voltage supply planes, each of the voltage supply planes corresponding to a respective one of the active layers.

Abstract: A method, apparatus, computer chip, circuit board, computer and system are provided in which data is stored in a low-voltage, maskable memory. Also provided is a computer readable storage device encoded with data for adapting a manufacturing facility to create an apparatus. The method includes storing a data value in a memory cell in a storage device if a first access parameter associated with the memory cell matches a first pre-determined value and if a second access parameter associated with the memory cell matches a second pre-determined value. The method also includes maintaining a data value in the memory cell in the storage device if the first access parameter differs from the first pre-determined value. The apparatus includes a first and second pair of access parameter ports operatively coupled together and associated with a first and second access parameter respectively.

Abstract: A power gate includes a series of electrical contacts along at least a portion of an integrated circuit and a series of power gate transistors electrically coupled to the electrical contacts on the integrated circuit to form a power gate boundary, e.g., at the integrated circuit periphery. The electrical contacts along at least a portion of a running length of the power gate boundary define a substantially non-linear profile. The non-linear profile provides increased contact density which improves current balancing across the electrical contacts and current throughput through the power gate. The non-linear profile is a sinusoidal or zigzag pattern with intermediate offset bump contacts. The contact profiles along the power gate boundary can include both linear and non-linear profiles.

Abstract: Methods for fabricating a hybrid interconnect structure that possesses a higher interconnect capacitance in one set of regions than in other regions on the same microelectronic chip. Several methods to fabricate such a structure are provided. Circuit implementations of such hybrid interconnect structures are described that enable increased static noise margin and reduce the leakage in SRAM cells and common power supply voltages for SRAM and logic in such a chip. Methods that enable combining these circuit benefits with higher interconnect performance speed and superior mechanical robustness in such chips are also taught.

Abstract: The present invention provides an improved SRAM cell. Specifically, the present invention provides an SRAM cell having one or more sets of stacked transistors for isolating the cell during a read operation. Depending on the embodiment, the SRAM cell of the present invention can have eight or ten transistors. Regardless, the SRAM cell of the present invention typically includes separate/decoupled write word and read word lines, a pair of cross-coupled inverters, and a complimentary pair of pass transistors that are coupled to the write word line. Each set of stacked transistors implemented within the SRAM cell has a transistor that is coupled to a bit line as well as the read word line.

Abstract: A method for executing multiple computational primitives is provided in accordance with exemplary embodiments. A first computational unit and at least a second computational unit cooperate to execute multiple computational primitives. The first computational unit independently computes other computational primitives. By virtue of arbitration for shared source operand buses or shared result buses, availability of the first and second computational units needed to execute cooperatively the multiple computational primitives is assured by a process of reservation as used for a computational primitive executed on a dedicated computational unit.

Abstract: A device that includes an electronic device referred to as an integrated circuit interposer is disclosed. The integrated circuit includes a voltage regulator module. The interposer is attached to an electronic device, such as another integrated circuit, and facilitates control and distribution of power to the electronic device. The integrated circuit interposer can also conduct signaling between the attached electronic device and another electronic device. The voltage regulator module at the integrated circuit interposer can be configured to provide a voltage reference signal to the attached electronic device. Generation of the voltage reference signal by the integrated circuit interposer can be enabled or disabled and the value of the voltage reference signal can be adjusted, depending on operating requirements of the electronic device.

Abstract: A circuit incorporating a current starved ring oscillator is coupled to a power gate switch in an integrated circuit. The circuit incorporating the current starved ring oscillator amplifies a voltage difference between a virtual ground associated with the power gate switch and ground, and converts the difference to a frequency. Digital logic monitors the output of the ring oscillator using a counter and a reference clock. Control circuitry controls operation of the integrated circuit in dependence on the monitored conditions associated with the power gate switch. A method monitors a virtual ground voltage across a power gate switch in an integrated circuit; and controls operation of the integrated circuit in dependence on the monitored virtual ground voltage.

Abstract: A memory circuit includes a global read bit line, a global read bit line latch, and a plurality of sub-arrays, each of which includes first and second local read bit lines, first and second local write bit lines, and first and second pluralities of memory cells interconnected, respectively, with the first and second local read bit lines and the first and second local write bit lines. The local read bit lines are decoupled from the local write bit lines. A local multiplexing block is interconnected with the first and second local read bit lines and is configured to ground the first and second local read bit lines upon assertion of a SLEEP signal, and to selectively interconnect the local read bit lines to the global read bit line. A global multiplexing block is interconnected with the global read bit line and is configured to maintain the global read bit line in a substantially discharged state upon assertion of the SLEEP signal and to interconnect the global read bit line to the global read bit line latch.

Abstract: Methods for fabricating a hybrid interconnect structure that possesses a higher interconnect capacitance in one set of regions than in other regions on the same microelectronic chip. Several methods to fabricate such a structure are provided. Circuit implementations of such hybrid interconnect structures are described that enable increased static noise margin and reduce the leakage in SRAM cells and common power supply voltages for SRAM and logic in such a chip. Methods that enable combining these circuit benefits with higher interconnect performance speed and superior mechanical robustness in such chips are also taught.