Patents by Inventor Stephen V. Kosonocky

Stephen V. Kosonocky has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20090251171
    Abstract: A circuit incorporating a current starved ring oscillator is coupled to a power gate switch in an integrated circuit. The circuit incorporating the current starved ring oscillator amplifies a voltage difference between a virtual ground associated with the power gate switch and ground, and converts the difference to a frequency. Digital logic monitors the output of the ring oscillator using a counter and a reference clock. Control circuitry controls operation of the integrated circuit in dependence on the monitored conditions associated with the power gate switch. A method monitors a virtual ground voltage across a power gate switch in an integrated circuit; and controls operation of the integrated circuit in dependence on the monitored virtual ground voltage.
    Type: Application
    Filed: April 3, 2008
    Publication date: October 8, 2009
    Inventors: J. Adam Butts, Gary S. Ditlow, Stephen V. Kosonocky, Brian C. Monwai
  • Publication number: 20090251974
    Abstract: A memory circuit includes a global read bit line, a global read bit line latch, and a plurality of sub-arrays, each of which includes first and second local read bit lines, first and second local write bit lines, and first and second pluralities of memory cells interconnected, respectively, with the first and second local read bit lines and the first and second local write bit lines. The local read bit lines are decoupled from the local write bit lines. A local multiplexing block is interconnected with the first and second local read bit lines and is configured to ground the first and second local read bit lines upon assertion of a SLEEP signal, and to selectively interconnect the local read bit lines to the global read bit line. A global multiplexing block is interconnected with the global read bit line and is configured to maintain the global read bit line in a substantially discharged state upon assertion of the SLEEP signal and to interconnect the global read bit line to the global read bit line latch.
    Type: Application
    Filed: April 7, 2008
    Publication date: October 8, 2009
    Applicant: International Business Machines Corporation
    Inventors: Sam Gat-Shang Chu, Saiful Islam, Jae-Joon Kim, Stephen V. Kosonocky
  • Publication number: 20090198974
    Abstract: A method for executing multiple computational primitives is provided in accordance with exemplary embodiments. A first computational unit and at least a second computational unit cooperate to execute multiple computational primitives. The first computational unit independently computes other computational primitives. By virtue of arbitration for shared source operand buses or shared result buses, availability of the first and second computational units needed to execute cooperatively the multiple computational primitives is assured by a process of reservation as used for a computational primitive executed on a dedicated computational unit.
    Type: Application
    Filed: January 31, 2008
    Publication date: August 6, 2009
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Harry S. Barowski, J. Adam Butts, Stephen V. Kosonocky, Silvia M. Mueller, Jochen Preiss
  • Patent number: 7562273
    Abstract: Techniques are provided for a register file cell that includes a primary storage portion configured to store a first value, and a secondary storage portion that is coupled to the primary storage portion. The secondary storage portion is configured to function as a scan latch during a test operation, and is further configured to store a second value during normal operation. The second value is a duplicate of the first value. The cell further includes an error detection portion that is coupled to the primary storage portion and the secondary storage portion and is configured to indicate a difference between the first value and the second value, caused by a soft error.
    Type: Grant
    Filed: June 2, 2006
    Date of Patent: July 14, 2009
    Assignee: International Business Machines Corporation
    Inventors: Sam Gat-Shang Chu, Daniel R. Knebel, Stephen V. Kosonocky
  • Patent number: 7545671
    Abstract: A memory cell comprises a wordline, a first digital inverter with a first input and a first output, and a second digital inverter with a second input and a second output. Moreover, the memory cell further comprises a first feedback connection connecting the first output to the second input, and a second feedback connection connecting the second output to the first input. The first feedback connection comprises a first resistive element and the second feedback connection comprises a second resistive element. What is more, each digital inverter has an associated capacitance. The memory cell is configured such that reading the memory cell includes applying a read voltage pulse to the wordline. In addition, the first and second resistive elements are configured such that the first and second feedback connections have resistance-capacitance induced delays longer than the applied read voltage pulse.
    Type: Grant
    Filed: May 30, 2008
    Date of Patent: June 9, 2009
    Assignee: International Business Machines Corporation
    Inventors: Azeez Bhavnagarwala, Stephen V. Kosonocky, Sampath Purushothaman, Kenneth P. Rodbell
  • Patent number: 7516424
    Abstract: A method, system and computer program product for modeling and simulating a powergated hierarchical element of an integrated circuit is disclosed. In modeling a powergated macro, the invention does not model all logic gates or elements as powergated, instead, the invention only models latches as connected to an integrated switch to be powergated. In addition, a fence circuit attached to the powergated macro is modeled as including an extra control signal to force a powergated state of the powergated macro into the fence circuit.
    Type: Grant
    Filed: February 21, 2006
    Date of Patent: April 7, 2009
    Assignee: International Business Machines Corporation
    Inventors: Stephen J. Barnfield, Subhrajit Bhattacharya, Daniel R. Knebel, Stephen V. Kosonocky
  • Patent number: 7486108
    Abstract: A charge recycling power gate and corresponding method are provided for using a charge sharing effect between a capacitive load of a functional unit and a parasitic capacitance of a charge recycling means to turn on a switching means between a virtual ground and a ground, the charge recycling power gate including a first transistor, a virtual ground in signal communication with a first terminal of the first transistor, a ground in signal communication with a second terminal of the first transistor, a capacitor having a first terminal in signal communication with a third terminal of the first transistor and a second terminal in signal communication with the ground, and a second transistor having a first terminal in signal communication with the virtual ground and a second terminal in signal communication with the third terminal of the first transistor.
    Type: Grant
    Filed: September 8, 2006
    Date of Patent: February 3, 2009
    Assignee: International Business Machines Corporation
    Inventors: Suhwan Kim, Daniel R. Knebel, Stephen V. Kosonocky
  • Publication number: 20080225573
    Abstract: A memory cell comprises a wordline, a first digital inverter with a first input and a first output, and a second digital inverter with a second input and a second output. Moreover, the memory cell further comprises a first feedback connection connecting the first output to the second input, and a second feedback connection connecting the second output to the first input. The first feedback connection comprises a first resistive element and the second feedback connection comprises a second resistive element. What is more, each digital inverter has an associated capacitance. The memory cell is configured such that reading the memory cell includes applying a read voltage pulse to the wordline. In addition, the first and second resistive elements are configured such that the first and second feedback connections have resistance-capacitance induced delays longer than the applied read voltage pulse.
    Type: Application
    Filed: May 30, 2008
    Publication date: September 18, 2008
    Applicant: International Business Machines Corporation
    Inventors: Azeez Bhavnagarwala, Stephen V. Kosonocky, Sampath Purushothaman, Kenneth P. Rodbell
  • Publication number: 20080203445
    Abstract: An IC structure having reduced power loss and/or noise includes two or more active semiconductor regions stacked in a substantially vertical dimension, each active semiconductor region including an active layer. The IC structure further includes two or more voltage supply planes, each of the voltage supply planes corresponding to a respective one of the active layers.
    Type: Application
    Filed: May 15, 2008
    Publication date: August 28, 2008
    Applicant: International Business Machines Corporation
    Inventors: Kerry Bernstein, Paul W. Coteus, Philip George Emma, Allan Mark Hartstein, Stephen V. Kosonocky, Ruchir Puri, Mark B. Ritter
  • Patent number: 7402854
    Abstract: An IC structure having reduced power loss and/or noise includes two or more active semiconductor regions stacked in a substantially vertical dimension, each active semiconductor region including an active layer. The IC structure further includes two or more voltage supply planes, each of the voltage supply planes corresponding to a respective one of the active layers.
    Type: Grant
    Filed: July 31, 2006
    Date of Patent: July 22, 2008
    Assignee: International Business Machines Corporation
    Inventors: Kerry Bernstein, Paul W. Coteus, Philip George Emma, Allan Mark Hartstein, Stephen V. Kosonocky, Ruchir Puri, Mark B. Ritter
  • Patent number: 7397691
    Abstract: A memory cell comprises a wordline, a first digital inverter with a first input and a first output, and a second digital inverter with a second input and a second output. Moreover, the memory cell further comprises a first feedback connection connecting the first output to the second input, and a second feedback connection connecting the second output to the first input. The first feedback connection comprises a first resistive element and the second feedback connection comprises a second resistive element. What is more, each digital inverter has an associated capacitance. The memory cell is configured such that reading the memory cell includes applying a read voltage pulse to the wordline. In addition, the first and second resistive elements are configured such that the first and second feedback connections have resistance-capacitance induced delays longer than the applied read voltage pulse.
    Type: Grant
    Filed: April 24, 2006
    Date of Patent: July 8, 2008
    Assignee: International Business Machines Corporation
    Inventors: Azeez Bhavnagarwala, Stephen V. Kosonocky, Sampath Purushothaman, Kenneth P. Rodbell
  • Publication number: 20080023731
    Abstract: An IC structure having reduced power loss and/or noise includes two or more active semiconductor regions stacked in a substantially vertical dimension, each active semiconductor region including an active layer. The IC structure further includes two or more voltage supply planes, each of the voltage supply planes corresponding to a respective one of the active layers.
    Type: Application
    Filed: July 31, 2006
    Publication date: January 31, 2008
    Applicant: International Business Machines Corporation
    Inventors: Kerry Bernstein, Paul W. Coteus, Philip George Emma, Allan Mark Hartstein, Stephen V. Kosonocky, Ruchir Puri, Mark B. Ritter
  • Publication number: 20070300131
    Abstract: Techniques are provided for a register file cell that includes a primary storage portion configured to store a first value, and a secondary storage portion that is coupled to the primary storage portion. The secondary storage portion is configured to function as a scan latch during a test operation, and is further configured to store a second value during normal operation. The second value is a duplicate of the first value. The cell further includes an error detection portion that is coupled to the primary storage portion and the secondary storage portion and is configured to indicate a difference between the first value and the second value, caused by a soft error.
    Type: Application
    Filed: June 2, 2006
    Publication date: December 27, 2007
    Applicant: International Business Machines Corporation
    Inventors: Sam Gat-Shang Chu, Daniel R. Knebel, Stephen V. Kosonocky
  • Patent number: 7259986
    Abstract: Circuits and methods are provided to implement low voltage, higher performance semiconductor memory devices such as CMOS static random access memory (SRAM) or multi-port register files. For example, circuits and methods are provided for dynamically adjusting power supply and/or ground line voltages that are applied to the memory cells during different modes of memory operation to enable low voltage, high performance operation of the memory devices.
    Type: Grant
    Filed: March 25, 2005
    Date of Patent: August 21, 2007
    Assignee: International Business Machines Corporation
    Inventors: Azeez J. Bhavnagarwala, Stephen V. Kosonocky
  • Patent number: 7185215
    Abstract: A machine code builder providing improved software controlled power management is described. A machine code builder reads pre-executable code and builds machine code from the pre-executable code to maximize a duration that a resource is not required. The resource(s) not required may be user defined or the builder can analyze the pre-executable code to determine which resource(s) are not required. The builder re-organizes machine code to maximize the time a particular resource is not used. Mechanisms are also provided to have resource emulation code execute during re-energizing of a resource to prevent loss of performance.
    Type: Grant
    Filed: February 24, 2003
    Date of Patent: February 27, 2007
    Assignee: International Business Machines Corporation
    Inventors: Thomas E Cook, Ian R Govett, Suhwan Kim, Stephen V. Kosonocky, Peter A. Sandon
  • Patent number: 7180814
    Abstract: An integrated circuit, such as a memory macro, includes multiple power rails supporting first and second voltage differentials, with the second voltage differential being smaller than the first voltage differential. Signal lines in the integrated circuit are driven with the small voltage swing, which is generated by small swing circuits. The integrated circuit further includes regeneration circuits, which are receiving small voltage swing inputs and are outputting first, or full voltage swings. The application of the small voltage swing to the signal lines saves power in the integrated circuit. A wide bandwidth, full-wordline I/O, memory integrated circuit has simultaneously operable connection paths between essentially all the memory cells that are attached to the same wordline and the corresponding I/O terminals, and it has a single ended data-line structure.
    Type: Grant
    Filed: October 12, 2005
    Date of Patent: February 20, 2007
    Assignee: International Business Machines Corporation
    Inventors: Wing K. Luk, Robert H. Dennard, Stephen V. Kosonocky
  • Patent number: 7170310
    Abstract: A test system and method for integrated circuits includes an energy source having an adjustable energy rate, and a feedback device, which measures a physical quantity at a discrete position on an integrated circuit. A control circuit adjusts the power source to externally apply energy to the integrated circuit at the discrete position. A circuit tester applies test programs to the integrated circuit while the discrete position is maintained at a value of the physical quantity in accordance with the control circuit.
    Type: Grant
    Filed: September 8, 2004
    Date of Patent: January 30, 2007
    Assignee: International Business Machines Corporation
    Inventors: Keith A. Jenkins, Stephen V. Kosonocky
  • Patent number: 7138825
    Abstract: A charge recycling power gate and corresponding method are provided for using a charge sharing effect between a capacitive load of a functional unit and a parasitic capacitance of a charge recycling means to turn on a switching means between a virtual ground and a ground, the charge recycling power gate including a first transistor, a virtual ground in signal communication with a first terminal of the first transistor, a ground in signal communication with a second terminal of the first transistor, a capacitor having a first terminal in signal communication with a third terminal of the first transistor and a second terminal in signal communication with the ground, and a second transistor having a first terminal in signal communication with the virtual ground and a second terminal in signal communication with the third terminal of the first transistor.
    Type: Grant
    Filed: June 29, 2004
    Date of Patent: November 21, 2006
    Assignee: International Business Machines Corporation
    Inventors: Suhwan Kim, Daniel R. Knebel, Stephen V. Kosonocky
  • Patent number: 7127560
    Abstract: A power saving cache and a method of operating a power saving cache. The power saving cache includes circuitry to dynamically reduce the logical size of the cache in order to save power. Preferably, a method is used to determine optimal cache size for balancing power and performance, using a variety of combinable hardware and software techniques. Also, in a preferred embodiment, steps are used for maintaining coherency during cache resizing, including the handling of modified (“dirty”) data in the cache, and steps are provided for partitioning a cache in one of several way to provide an appropriate configuration and granularity when resizing.
    Type: Grant
    Filed: October 14, 2003
    Date of Patent: October 24, 2006
    Assignee: International Business Machines Corporation
    Inventors: Erwin B. Cohen, Thomas E. Cook, Ian R. Govett, Paul D. Kartschoke, Stephen V. Kosonocky, Peter A. Sandon, Keith R. Williams
  • Patent number: 7085796
    Abstract: A dynamic parallel adder is provided which eliminates the positive (or negative) complimentary carry generate and propagate signal logic normally used to implement a conventional dynamic parallel added. The method for implementing the incentive adder users a novel XOR configuration constructed with dynamic CMOS logic circuits.
    Type: Grant
    Filed: June 8, 2000
    Date of Patent: August 1, 2006
    Assignee: International Business Machines Corporation
    Inventor: Stephen V. Kosonocky