Abstract: A method and system for migrating an existing ASIC design from one semiconductor fabrication process to another are disclosed herein. In some embodiments, a method for migrating the existing ASIC design comprises parsing the gate-level netlist one row at a time into one or more standard cells forming the ASIC design, forming a plurality of mapping tables having mapping rules for mapping the parsed one or more standard cells into equivalent target standard cells implemented in the second semiconductor fabrication process, mapping the parsed one or more standard cells into the equivalent target standard cells using the plurality of mapping tables, and generating a target gate-level netlist describing the ASIC design in terms of the equivalent target standard cells.

Abstract: Systems, methods, and computer programs products are described for optimizing circuit synthesis for implementation on an integrated circuit. A register transfer level code description of logic behavior of a circuit. The register transfer level code description is converted into structurally defined circuit designs for multiple types of components and feature size technologies. A floor plan of each structurally defined circuit design is generated. A physically simulated circuit is created for each floor plan. A range of operating conditions is swept over to analyze power, performance, and area of each physically simulated circuit.

Abstract: Systems, methods, and computer programs products are described for optimizing circuit synthesis for implementation on an integrated circuit. A register transfer level code description of logic behavior of a circuit. The register transfer level code description is converted into structurally defined circuit designs for multiple types of components and feature size technologies. A floor plan of each structurally defined circuit design is generated. A physically simulated circuit is created for each floor plan. A range of operating conditions is swept over to analyze power, performance, and area of each physically simulated circuit.

Abstract: Systems and methods are described herein for attribute-point-based timing formal verification of application specific integrated circuit (ASIC) and system on chip (SoC) designs. A target circuit design having a first set of netlists and timing constraints is received. A plurality of key clock-pin-net-load-setting attributes are extracted from the first ported netlists and timing constraints. The clock-pin-net-load-setting attribute mismatch in the result report is checked between the target circuit design and a golden circuit design by comparing the plurality of target attributes with a plurality of golden attributes of the golden circuit design after the target design database is loaded for static timing analysis (STA).

Abstract: Methods, systems, and computer program products are described for generating synthesizable netlists from register transfer level (RTL) designs to aid with semiconductor device design. These netlists provide RTL design information corresponding to a portion of a semiconductor device. A configuration tracer generates behavior information associated with the RTL design. A register compiler compiles a set of semiconductor devices based on one or more technologies and power, performance, and area (PPA) information related to the semiconductor device. Semiconductor devices generated by the register compiler that meet predefined power, performance, and area conditions are identified. Structural information for aligning the input/output ports of the semiconductor device is generated.

Abstract: Porogen accumulation in a UV-cure chamber is reduced by removing outgassed porogen through a heated outlet while purge gas is flowed across a window through which a wafer is exposed to UV light. A purge ring having specific major and minor exhaust to inlet area ratios may be partially made of flame polished quartz to improve flow dynamics. The reduction in porogen accumulation allows more wafers to be processed between chamber cleans, thus improving throughput and cost.

Abstract: Provided herein are methods of treating a coronavirus infection in a patient, comprising administering an agent to the patient in an amount effective to increase cellular lysosomal pH in cells of the patient. As provided herein, the agent is one or more of an agent for reducing expression or activity of nuclear receptor coactivator 7 (NCOA7) in the patient, an RNAi agent or antisense reagent for knocking down expression of a v-rel avian reticuloendotheliosis viral oncogene homolog A (RelA/p65) transcript, or a janus kinase (JAK) inhibitor, thereby increasing cellular lysosomal pH in cells of the patient.

Abstract: Disclosed are compositions comprising a YAP1/WWRT1 inhibiting agent and a glutaminase inhibiting agent and methods of their use. Disclosed herein are therapeutic particles comprising a biocompatible polymer, a YAP1/WWRT1 inhibiting agent, and a glutaminase inhibiting agent. In one aspect, disclosed herein are methods of treating a pulmonary disease in a subject in need of such treatment comprising administering the therapeutic particle to the subject.

Abstract: A method includes providing a register transfer level (RTL) description of a circuit design, providing a plurality of RTL-to-gate-level mapping details by translating the RTL description into a gate-level netlist, providing one or more input/output (I/O) variables as stimulus to simulate the RTL description of the circuit design, capturing a plurality of internal operation values from the simulated RTL description at a beginning time of a specified period of time wherein the specified period of time is less than a time period required to compete a full-scale simulation, mapping the captured internal operation values to corresponding gate-level nodes of the gate-level netlist, capturing a plurality of I/O values from the I/O variables at the beginning time of the specified period of time, and simulating the circuit design in a gate-level for the specified period of time based on the mapped internal operation values and the captured I/O values.

Abstract: Disclosed is a grid structure of a storage rack, and the grid structure is formed by stacking a first frame with a second frame, and the first frame is formed by a multiple of parallel first wires with a spacing from one another, and the second frame is formed by a multiple of parallel second wires with a spacing from one another, and the first wires and the second wires are arranged perpendicular to each other respectively, and two side edges of the second frame have two latch portions with a shape corresponding to the first frame, so that objects of different lengths can be stored according to a different sequence of stacking the first and second frames, and the structure ensures the supporting effect of carrying heavy objects.

Abstract: A temperature controlled showerhead for chemical vapor deposition (CVD) chambers enhances heat dissipation to enable accurate temperature control with an electric heater. Heat dissipates by conduction through a showerhead stem and fluid passageway and radiation from a back plate. A temperature control system includes one or more temperature controlled showerheads in a CVD chamber with fluid passageways serially connected to a heat exchanger.

Abstract: A purge ring for providing a gas to a wafer processing chamber includes an inlet ring wall defining a ring hole space. An outer perimeter of the inlet ring wall is elliptical. An outer perimeter of the ring hole space is circular. The inlet ring wall is a continuous structure surrounding the ring hole space. An inlet baffle formed within the inlet ring wall surrounds at least 180 degrees of the outer perimeter of the ring hole space. An inlet plenum arranged in a first end of the inlet ring wall provides the gas to the ring hole space through the inlet baffle. An exhaust channel is formed within the inlet ring wall in a second end of the inlet ring wall. An exhaust outlet hole arranged in the second end of the inlet ring wall exhausts the gas out of the ring hole space via the exhaust channel.

Abstract: Porogen accumulation in a UV-cure chamber is reduced by removing outgassed porogen through a heated outlet while purge gas is flowed across a window through which a wafer is exposed to UV light. A purge ring having specific major and minor exhaust to inlet area ratios may be partially made of flame polished quartz to improve flow dynamics. The reduction in porogen accumulation allows more wafers to be processed between chamber cleans, thus improving throughput and cost.

Abstract: Porogen accumulation in a UV-cure chamber is reduced by removing outgassed porogen through a heated outlet while purge gas is flowed across a window through which a wafer is exposed to UV light. A purge ring having specific major and minor exhaust to inlet area ratios may be partially made of flame polished quartz to improve flow dynamics. The reduction in porogen accumulation allows more wafers to be processed between chamber cleans, thus improving throughput and cost.

Abstract: A method includes providing a register transfer level (RTL) description of a circuit design, providing a plurality of RTL-to-gate-level mapping details by translating the RTL description into a gate-level netlist, providing one or more input/output (I/O) variables as stimulus to simulate the RTL description of the circuit design, capturing a plurality of internal operation values from the simulated RTL description at a beginning time of a specified period of time wherein the specified period of time is less than a time period required to compete a full-scale simulation, mapping the captured internal operation values to corresponding gate-level nodes of the gate-level netlist, capturing a plurality of I/O values from the I/O variables at the beginning time of the specified period of time, and simulating the circuit design in a gate-level for the specified period of time based on the mapped internal operation values and the captured I/O values.

Abstract: Described herein are systems, methods, and software to handle requests to an application file shared by a plurality of applications on a computing system. In one implementation, a method of handling request for an application file shared by a plurality of applications on a computing system includes identifying a request for the application file on the computing system, wherein each application in the plurality of applications is associated with an individualized version of the application file, and wherein the plurality of applications is stored on separate application storage volumes attached to the computing system. The method further provides identifying an application associated with the request, and identifying an application storage volume in the application storage volumes that stores the application. Once identified, the method also includes retrieving the application file from the identified storage volume to support the request.

Abstract: Disclosed is a grid structure of a storage rack, and the storage rack has four corner pillars vertically disposed at four corner of the storage rack and edge frames coupled with each other to form a rectangular frame space, and at least one grid disposed in the frame space, and the edge frames and the grid are combined to form a carrying plane for carrying heavy objects, and the grid is formed by first wires and second wires staggered with one another, and the second wires are coupled to the bottom of the first wires. Each second wire has a sectional shape corresponsive to a positive force direction of the carrying plane and in a flat elliptical shape and an aspect ratio falling within a range of 1.5:1˜3.5:1. Therefore, the supporting effect while carrying heavy objects can be improved without increasing the weight of materials.

Abstract: A temperature controlled showerhead for chemical vapor deposition (CVD) chambers enhances heat dissipation to enable accurate temperature control with an electric heater. Heat dissipates by conduction through a showerhead stem and fluid passageway and radiation from a back plate. A temperature control system includes one or more temperature controlled showerheads in a CVD chamber with fluid passageways serially connected to a heat exchanger.

Abstract: A purge ring for providing a gas to a wafer processing chamber includes an inlet ring wall defining a ring hole space. An outer perimeter of the inlet ring wall is elliptical. An outer perimeter of the ring hole space is circular. The inlet ring wall is a continuous structure surrounding the ring hole space. An inlet baffle formed within the inlet ring wall surrounds at least 180 degrees of the outer perimeter of the ring hole space. An inlet plenum arranged in a first end of the inlet ring wall provides the gas to the ring hole space through the inlet baffle. An exhaust channel is formed within the inlet ring wall in a second end of the inlet ring wall. An exhaust outlet hole arranged in the second end of the inlet ring wall exhausts the gas out of the ring hole space via the exhaust channel.