Abstract: Disclosed is a grid structure of a storage rack, and the grid structure is formed by stacking a first frame with a second frame, and the first frame is formed by a multiple of parallel first wires with a spacing from one another, and the second frame is formed by a multiple of parallel second wires with a spacing from one another, and the first wires and the second wires are arranged perpendicular to each other respectively, and two side edges of the second frame have two latch portions with a shape corresponding to the first frame, so that objects of different lengths can be stored according to a different sequence of stacking the first and second frames, and the structure ensures the supporting effect of carrying heavy objects.

Abstract: A temperature controlled showerhead for chemical vapor deposition (CVD) chambers enhances heat dissipation to enable accurate temperature control with an electric heater. Heat dissipates by conduction through a showerhead stem and fluid passageway and radiation from a back plate. A temperature control system includes one or more temperature controlled showerheads in a CVD chamber with fluid passageways serially connected to a heat exchanger.

Abstract: A purge ring for providing a gas to a wafer processing chamber includes an inlet ring wall defining a ring hole space. An outer perimeter of the inlet ring wall is elliptical. An outer perimeter of the ring hole space is circular. The inlet ring wall is a continuous structure surrounding the ring hole space. An inlet baffle formed within the inlet ring wall surrounds at least 180 degrees of the outer perimeter of the ring hole space. An inlet plenum arranged in a first end of the inlet ring wall provides the gas to the ring hole space through the inlet baffle. An exhaust channel is formed within the inlet ring wall in a second end of the inlet ring wall. An exhaust outlet hole arranged in the second end of the inlet ring wall exhausts the gas out of the ring hole space via the exhaust channel.

Abstract: Porogen accumulation in a UV-cure chamber is reduced by removing outgassed porogen through a heated outlet while purge gas is flowed across a window through which a wafer is exposed to UV light. A purge ring having specific major and minor exhaust to inlet area ratios may be partially made of flame polished quartz to improve flow dynamics. The reduction in porogen accumulation allows more wafers to be processed between chamber cleans, thus improving throughput and cost.

Abstract: Porogen accumulation in a UV-cure chamber is reduced by removing outgassed porogen through a heated outlet while purge gas is flowed across a window through which a wafer is exposed to UV light. A purge ring having specific major and minor exhaust to inlet area ratios may be partially made of flame polished quartz to improve flow dynamics. The reduction in porogen accumulation allows more wafers to be processed between chamber cleans, thus improving throughput and cost.

Abstract: A method includes providing a register transfer level (RTL) description of a circuit design, providing a plurality of RTL-to-gate-level mapping details by translating the RTL description into a gate-level netlist, providing one or more input/output (I/O) variables as stimulus to simulate the RTL description of the circuit design, capturing a plurality of internal operation values from the simulated RTL description at a beginning time of a specified period of time wherein the specified period of time is less than a time period required to compete a full-scale simulation, mapping the captured internal operation values to corresponding gate-level nodes of the gate-level netlist, capturing a plurality of I/O values from the I/O variables at the beginning time of the specified period of time, and simulating the circuit design in a gate-level for the specified period of time based on the mapped internal operation values and the captured I/O values.

Abstract: Described herein are systems, methods, and software to handle requests to an application file shared by a plurality of applications on a computing system. In one implementation, a method of handling request for an application file shared by a plurality of applications on a computing system includes identifying a request for the application file on the computing system, wherein each application in the plurality of applications is associated with an individualized version of the application file, and wherein the plurality of applications is stored on separate application storage volumes attached to the computing system. The method further provides identifying an application associated with the request, and identifying an application storage volume in the application storage volumes that stores the application. Once identified, the method also includes retrieving the application file from the identified storage volume to support the request.

Abstract: Disclosed is a grid structure of a storage rack, and the storage rack has four corner pillars vertically disposed at four corner of the storage rack and edge frames coupled with each other to form a rectangular frame space, and at least one grid disposed in the frame space, and the edge frames and the grid are combined to form a carrying plane for carrying heavy objects, and the grid is formed by first wires and second wires staggered with one another, and the second wires are coupled to the bottom of the first wires. Each second wire has a sectional shape corresponsive to a positive force direction of the carrying plane and in a flat elliptical shape and an aspect ratio falling within a range of 1.5:1˜3.5:1. Therefore, the supporting effect while carrying heavy objects can be improved without increasing the weight of materials.

Abstract: A temperature controlled showerhead for chemical vapor deposition (CVD) chambers enhances heat dissipation to enable accurate temperature control with an electric heater. Heat dissipates by conduction through a showerhead stem and fluid passageway and radiation from a back plate. A temperature control system includes one or more temperature controlled showerheads in a CVD chamber with fluid passageways serially connected to a heat exchanger.

Abstract: A purge ring for providing a gas to a wafer processing chamber includes an inlet ring wall defining a ring hole space. An outer perimeter of the inlet ring wall is elliptical. An outer perimeter of the ring hole space is circular. The inlet ring wall is a continuous structure surrounding the ring hole space. An inlet baffle formed within the inlet ring wall surrounds at least 180 degrees of the outer perimeter of the ring hole space. An inlet plenum arranged in a first end of the inlet ring wall provides the gas to the ring hole space through the inlet baffle. An exhaust channel is formed within the inlet ring wall in a second end of the inlet ring wall. An exhaust outlet hole arranged in the second end of the inlet ring wall exhausts the gas out of the ring hole space via the exhaust channel.

Abstract: Porogen accumulation in a UV-cure chamber is reduced by removing outgassed porogen through a heated outlet while purge gas is flowed across a window through which a wafer is exposed to UV light. A purge ring having specific major and minor exhaust to inlet area ratios may be partially made of flame polished quartz to improve flow dynamics. The reduction in porogen accumulation allows more wafers to be processed between chamber cleans, thus improving throughput and cost.

Abstract: Porogen accumulation in a UV-cure chamber is reduced by removing outgassed porogen through a heated outlet while purge gas is flowed across a window through which a wafer is exposed to UV light. A purge ring having specific major and minor exhaust to inlet area ratios may be partially made of flame polished quartz to improve flow dynamics. The reduction in porogen accumulation allows more wafers to be processed between chamber cleans, thus improving throughput and cost.

Abstract: Porogen accumulation in a UV-cure chamber may be reduced by removing outgassed porogen by flowing a purge gas across a window through which a wafer is exposed to UV light. Porogens in the purge gas stream may, as they flow through the chamber and into an exhaust baffle, deposit on surfaces within the chamber, including on the exhaust baffle. The exhaust baffle may have particular features that cause such porogen deposition to be more uniformly distributed across the exhaust baffle, thus reducing the amount of time that may be required to fully clean the baffle of accumulated porogens during a cleaning process.

Abstract: Porogen accumulation in a UV-cure chamber may be reduced by removing outgassed porogen by flowing a purge gas across a window through which a wafer is exposed to UV light. Porogens in the purge gas stream may, as they flow through the chamber and into an exhaust baffle, deposit on surfaces within the chamber, including on the exhaust baffle. The exhaust baffle may have particular features that cause such porogen deposition to be more uniformly distributed across the exhaust baffle, thus reducing the amount of time that may be required to fully clean the baffle of accumulated porogens during a cleaning process.

Abstract: A manufacturing method for a stone speaker is disclosed. The stone speaker is placed in a garden and blended with the environment. Raw stones of various sizes and colors are crashed and provided as a kind of material for the stone speaker. The manual painting spray step is neglected. The stone speakers has an appearance like real natural stone and no disadvantages of the stone speakers made by the manual painting spray step.

Abstract: A purge ring for providing a gas to a wafer processing chamber includes an inlet ring wall defining a ring hole space. An outer perimeter of the inlet ring wall is elliptical. An outer perimeter of the ring hole space is circular. The inlet ring wall is a continuous structure surrounding the ring hole space. An inlet baffle formed within the inlet ring wall surrounds at least 180 degrees of the outer perimeter of the ring hole space. An inlet plenum arranged in a first end of the inlet ring wall provides the gas to the ring hole space through the inlet baffle. An exhaust channel is formed within the inlet ring wall in a second end of the inlet ring wall. An exhaust outlet hole arranged in the second end of the inlet ring wall exhausts the gas out of the ring hole space via the exhaust channel.

Abstract: A method for removing species from a substrate includes arranging a purge ring in a chamber proximate to a pedestal. The purge ring includes an inlet portion and an exhaust portion. The inlet portion defines an inlet plenum and an inlet baffle. The inlet baffle includes a continuous slit that is substantially continuous around a peripheral arc not less than about 270°. The exhaust portion includes an exhaust channel that is located substantially opposite the inlet baffle. The method further includes supplying ozone to the inlet plenum; at least partially defining a ring hole space having a periphery using the inlet portion and the exhaust portion; conveying gas from the inlet plenum into the ring hole space using the inlet baffle; conveying gas and other matter out of a purge space using the exhaust portion; and inhibiting deposition of material evolved from the substrate during curing using the purge ring.

Abstract: A method for removing species from a substrate includes arranging a purge ring in a chamber proximate to a pedestal. The purge ring includes an inlet portion and an exhaust portion. The inlet portion defines an inlet plenum and an inlet baffle. The inlet baffle includes a continuous slit that is substantially continuous around a peripheral arc not less than about 270°. The exhaust portion includes an exhaust channel that is located substantially opposite the inlet baffle. The method further includes supplying ozone to the inlet plenum; at least partially defining a ring hole space having a periphery using the inlet portion and the exhaust portion; conveying gas from the inlet plenum into the ring hole space using the inlet baffle; conveying gas and other matter out of a purge space using the exhaust portion; and inhibiting deposition of material evolved from the substrate during curing using the purge ring.

Abstract: Porogen accumulation in a UV-cure chamber is reduced by removing outgassed porogen through a heated outlet while purge gas is flowed across a window through which a wafer is exposed to UV light. A purge ring having specific major and minor exhaust to inlet area ratios may be partially made of flame polished quartz to improve flow dynamics. The reduction in porogen accumulation allows more wafers to be processed between chamber cleans, thus improving throughput and cost.