Abstract: Techniques are provided for establishing a Virtual Desktop Interface (VDI) connection at a virtual desktop thin client (VDTC) device, between a VDI client in the VDTC device and a VDI server in a hosted virtual desktop server (HVDS). A unified communications (UC) control connection is established between a UC protocol stack on the VDTC device and a primary call agent, where the UC control connection is configured to allow the UC protocol stack to register with the primary call agent, and to send or receive commands from the primary call agent that are based on signals from a UC control application running on the HVDS. A UC control backup application is started on the virtual desktop thin client device in a standby mode that is configured to switch to an active mode in response to a failure to establish or maintain the UC control connection, or a failure to establish or maintain the VDI connection.

Abstract: An apparatus for electroplating a layer of metal onto the surface of a wafer includes an ionically resistive ionically permeable element located in close proximity of the wafer and an auxiliary cathode located between the anode and the ionically resistive ionically permeable element. The ionically resistive ionically permeable element serves to modulate ionic current at the wafer surface. The auxiliary cathode is configured to shape the current distribution from the anode. The provided configuration effectively redistributes ionic current in the plating system allowing plating of uniform metal layers and mitigating the terminal effect.

Abstract: An apparatus for electroplating a layer of metal onto the surface of a wafer includes an ionically resistive ionically permeable element located in close proximity of the wafer and an auxiliary cathode located between the anode and the ionically resistive ionically permeable element. The ionically resistive ionically permeable element serves to modulate ionic current at the wafer surface. The auxiliary cathode is configured to shape the current distribution from the anode. The provided configuration effectively redistributes ionic current in the plating system allowing plating of uniform metal layers and mitigating the terminal effect.

Abstract: An apparatus for electroplating a layer of metal on the surface of a wafer includes an ionically resistive ionically permeable element located in close proximity of the wafer (preferably within 5 mm of the wafer surface) which serves to modulate ionic current at the wafer surface, and a second cathode configured to divert a portion of current from the wafer surface. The ionically resistive ionically permeable element in a preferred embodiment is a disk made of a resistive material having a plurality of perforations formed therein, such that perforations do not form communicating channels within the body of the disk. The provided configuration effectively redistributes ionic current in the plating system allowing plating of uniform metal layers and mitigating the terminal effect.

Abstract: An etching process for selectively etching exposed metal surfaces of a substrate and forming a conductive capping layer over the metal surfaces is described. In some embodiments, the etching process involves oxidation of the exposed metal to form a metal oxide that is subsequently removed from the surface of the substrate. The exposed metal may be oxidized by using solutions containing oxidizing agents such as peroxides or by using oxidizing gases such as those containing oxygen or ozone. The metal oxide produced is then removed using suitable metal oxide etching agents such as glycine. The oxidation and etching may occur in the same solution. In other embodiments, the exposed metal is directly etched without forming a metal oxide. Suitable direct metal etching agents include any number of acidic solutions. The process allows for controlled oxidation and/or etching with reduced pitting.

Abstract: Several techniques are described for reducing or mitigating the formation of seams and/or voids in electroplating the interior regions of microscopic recessed features. Cathodic polarization is used to mitigate the deleterious effects of introducing a substrate plated with a seed layer into an electroplating solution. Also described are diffusion-controlled electroplating techniques to provide for bottom-up filling of trenches and vias, avoiding thereby sidewalls growing together to create seams/voids. A preliminary plating step is also described that plates a thin film of conductor on the interior surfaces of features leading to adequate electrical conductivity to the feature bottom, facilitating bottom-up filling.

Abstract: Methods and apparatus are provided for processing semiconductor wafers sequentially. Sequential processes employ multi-station processing modules, where particular encompassing wafer processes are divided into sub-processes, each optimized for increasing wafer to wafer uniformity, result quality, and overall wafer throughput. In one example, a copper electroplating module includes separate stations for wetting, initiation, seed layer repair, fill, overburden, reclaim, and rinse.

Abstract: A bicycle frame assembly includes a main frame portion having a steering tube at its forward end and a pedal crankset bracket at its rearward end. An intermediate frame portion is pivotably connected to the main frame portion near the steering tube and extends rearwardly therefrom to a seat tube. A rear frame portion includes a pair of upper arm members and a pair of lower arm members connected at distal ends defining a pair of rear wheel drop outs. The upper arm members angle diagonally upwardly and are connected to the intermediate frame portion through a shock absorber. The lower arm members connect through a first link assembly to a main pivot point provided on the main frame portion above and in closely spaced relation to the crankset bracket. The first link assembly extends forwardly and upwardly from the main pivot point and defines another pivot point for connection to a frame member extending downwardly as part of the intermediate frame portion.