Abstract: A method of forming an electronic device is disclosed. The method comprises forming a barrier layer on a silicon layer, and depositing a silicon oxide layer on the barrier layer. The formation of the barrier layer on the silicon layer minimizes parasitic oxidation of the underlying silicon layer and minimizes defects in the silicon layer.

Abstract: A method of forming a silicon cap which comprises substantially no germanium atoms nor oxygen atoms is disclosed. Methods for controlling the oxidation of a silicon cap layer are also disclosed. Methods of forming a metal gate replacement which utilize the disclosed silicon cap and controlled oxidation are also disclosed.

Abstract: Embodiments described herein generally relate to enable the formation of a metal gate structure with a reduced effective oxide thickness over a similar structure formed via conventional methods. A plasma hydrogenation process followed by a plasma nitridization process, or a single-step plasma hydrogenation and nitridization process, is performed on a metal nitride layer in a film stack, thereby, according to some embodiments, removing oxygen atoms disposed within layers of the film stack and, in some embodiments, adding nitrogen atoms to the layers of the film stack. As a result, an effective oxide thickness of the metal gate structure is reduced with little or no accompanying flatband voltage shift.

Abstract: Embodiments described herein generally relate to enable the formation of a metal gate structure with a reduced effective oxide thickness over a similar structure formed via conventional methods. A plasma hydrogenation process followed by a plasma nitridization process is performed on a metal nitride layer in a film stack, thereby removing oxygen atoms disposed within layers of the film stack and, in some embodiments eliminating an oxygen-containing interfacial layer disposed within the film stack. As a result, an effective oxide thickness of the metal gate structure is reduced with little or no accompanying flatband voltage shift. Further, the metal gate structure operates with an increased leakage current that is as little as one quarter the increase in leakage current associated with a similar metal gate structure formed via conventional techniques.

Abstract: A sequential plasma process is employed to enable the modification of the work function of a p-type metal layer in a metal gate structure. The sequential plasma process includes a plasma hydrogenation and a plasma process that includes electronegative species. The sequential plasma process is performed on a p-type metal layer in a film stack, thereby replacing suboxides and/or other non-stoichiometrically combined electronegative atoms disposed on or within layers of the film stack with stoichiometrically combined electronegative atoms, such as O atoms. As a result, the work function of the p-type metal layer can be modified without changing a thickness of the p-type metal layer.

Abstract: A sequential plasma process is employed to enable the modification of the work function of a p-type metal layer in a metal gate structure. The sequential plasma process includes a plasma hydrogenation and a plasma process that includes electronegative species. The sequential plasma process is performed on a p-type metal layer in a film stack, thereby replacing suboxides and/or other non-stoichiometrically combined electronegative atoms disposed on or within layers of the film stack with stoichiometrically combined electronegative atoms, such as O atoms. As a result, the work function of the p-type metal layer can be modified without changing a thickness of the p-type metal layer.

Abstract: A sequential plasma process is employed to enable the modification of the work function of a p-type metal layer in a metal gate structure. The sequential plasma process includes a plasma hydrogenation and a plasma process that includes electronegative species. The sequential plasma process is performed on a p-type metal layer in a film stack, thereby replacing suboxides and/or other non-stoichiometrically combined electronegative atoms disposed on or within layers of the film stack with stoichiometrically combined electronegative atoms, such as O atoms. As a result, the work function of the p-type metal layer can be modified without changing a thickness of the p-type metal layer.

Abstract: Semiconductor devices incorporating multi-threshold voltage structures and methods of forming such semiconductor devices are provided herein. In some embodiments of the present disclosure, a semiconductor device having a multi-threshold voltage structure includes: a substrate; a gate dielectric layer atop the substrate, wherein the gate dielectric layer comprises an interface layer and a high-k dielectric layer atop the interface layer; a lanthanum nitride layer deposited atop the high-k dielectric layer; an interface of the interface layer and the high-k dielectric layer comprising lanthanum species from the lanthanum nitride layer; and a gate electrode layer atop the lanthanum nitride layer.

Abstract: Semiconductor devices incorporating multi-threshold voltage structures and methods of forming such semiconductor devices are provided herein. In some embodiments of the present disclosure, a semiconductor device having a multi-threshold voltage structure includes: a substrate; a gate dielectric layer atop the substrate, wherein the gate dielectric layer comprises an interface layer and a high-k dielectric layer atop the interface layer; a lanthanum nitride layer deposited atop the high-k dielectric layer; an interface of the interface layer and the high-k dielectric layer comprising lanthanum species from the lanthanum nitride layer; and a gate electrode layer atop the lanthanum nitride layer.

Abstract: Backside illuminated sensors and methods of manufacture are described. Specifically, a backside illuminated sensor with a dipole modulating layer near the photodiode is described.

Abstract: Embodiments of the disclosure generally relate to methods of adjusting transistor flat band voltage, and transistor gates formed using the same. In one embodiment, a method sequentially includes cleaning a substrate, annealing the substrate in a nitrogen-containing environment to form silicon-nitrogen bonds, hydroxylating the substrate surface, and depositing a hafnium oxide layer over the substrate. In another embodiment, the method further includes depositing an aluminum oxide layer over the substrate prior to depositing the hafnium oxide layer, and then annealing the substrate.

Abstract: Backside illuminated sensors and methods of manufacture are described. Specifically, a backside illuminated sensor with a dipole modulating layer near the photodiode is described.

Abstract: Embodiments of the disclosure generally relate to methods of adjusting transistor flat band voltage, and transistor gates formed using the same. In one embodiment, a method sequentially includes cleaning a substrate, annealing the substrate in a nitrogen-containing environment to form silicon-nitrogen bonds, hydroxylating the substrate surface, and depositing a hafnium oxide layer over the substrate. In another embodiment, the method further includes depositing an aluminum oxide layer over the substrate prior to depositing the hafnium oxide layer, and then annealing the substrate.

Abstract: Gate electrode structures used in field effect transistors and integrated circuits and methods of manufacture are disclosed. Improved work function and threshold modulation are provided by the methods and structures.

Abstract: Gate electrode structures used in field effect transistors and integrated circuits and methods of manufacture are disclosed. Improved work function and threshold modulation are provided by the methods and structures.

Abstract: Gate electrode structures used in field effect transistors and integrated circuits and methods of manufacture are disclosed. Improved work function and threshold modulation are provided by the methods and structures.

Abstract: Gate electrode structures used in field effect transistors and integrated circuits and methods of manufacture are disclosed. Improved work function and threshold modulation are provided by the methods and structures.