Abstract: A family of novel, low power, min-drive strength, double-edge triggered (DET) input data multiplexer (Mux-D) scan flip-flop (FF) is provided. The flip-flop takes the advantage of no state node in the slave to remove data inverters in a traditional DET FF to save power, without affecting the flip-flop functionality under coupling/glitch scenarios.

Abstract: A fast Mux-D scan flip-flop is provided, which bypasses a scan multiplexer to a master keeper side path, removing delay overhead of a traditional Mux-D scan topology. The design is compatible with simple scan methodology of Mux-D scan, while preserving smaller area and small number of inputs/outputs. Since scan Mux is not in the forward critical path, circuit topology has similar high performance as level-sensitive scan flip-flop and can be easily converted into bare pass-gate version. The new fast Mux-D scan flip-flop combines the advantages of the conventional LSSD and Mux-D scan flip-flop, without the disadvantages of each.

Abstract: An apparatus is provided which comprises: a multi-bit quad latch with an internally coupled level sensitive scan circuitry; and a combinational logic coupled to an output of the multi-bit quad latch. Another apparatus is provided which comprises: a plurality of sequential logic circuitries; and a clocking circuitry comprising inverters, wherein the clocking circuitry is shared by the plurality of sequential logic circuitries.

Abstract: Systems, apparatuses and methods identify a plurality of registers that are associated with a system-on-chip. The plurality of registers includes a first portion dedicated to write operations and a second portion dedicated to read operations. The technology writes data to the first portion of the plurality of registers, and transfers the data from the first portion to the second portion.

Abstract: An apparatus is provided which comprises: a multi-bit quad latch with an internally coupled level sensitive scan circuitry; and a combinational logic coupled to an output of the multi-bit quad latch. Another apparatus is provided which comprises: a plurality of sequential logic circuitries; and a clocking circuitry comprising inverters, wherein the clocking circuitry is shared by the plurality of sequential logic circuitries.

Abstract: An apparatus is provided which comprises: a first inverter to receive a clock; a pass-gate coupled to the first inverter; a second inverter coupled to the pass-gate and to provide an output clock; and a device coupled to the second inverter and the pass-gate, wherein the transistor and the pass-gate are controllable by a logic that depends on logic values of at least two signals (e.g., an enable and the clock).

Abstract: An apparatus is provided which comprises: a multi-bit quad latch with an internally coupled level sensitive scan circuitry; and a combinational logic coupled to an output of the multi-bit quad latch. Another apparatus is provided which comprises: a plurality of sequential logic circuitries; and a clocking circuitry comprising inverters, wherein the clocking circuitry is shared by the plurality of sequential logic circuitries.

Abstract: An apparatus is provided which comprises: a multi-bit quad latch with an internally coupled level sensitive scan circuitry; and a combinational logic coupled to an output of the multi-bit quad latch. Another apparatus is provided which comprises: a plurality of sequential logic circuitries; and a clocking circuitry comprising inverters, wherein the clocking circuitry is shared by the plurality of sequential logic circuitries.

Abstract: An apparatus is provided which comprises: a first inverter to receive a clock; a pass-gate coupled to the first inverter; a second inverter coupled to the pass-gate and to provide an output clock; and a device coupled to the second inverter and the pass-gate, wherein the transistor and the pass-gate are controllable by a logic that depends on logic values of at least two signals (e.g., an enable and the clock).

Abstract: Embodiments include apparatuses, methods, and systems for state retention electronic devices. In embodiments, an electronic device may include a state retention flip-flop having a plurality of P-type metal oxide semiconductor (PMOS) devices coupled with a common N-well, with one or more of the plurality of PMOS devices powered by an always-on supply and one or more of the plurality of PMOS devices powered by a power-gated supply. Other embodiments may be described and claimed.

Abstract: Embodiments include apparatuses, methods, and systems for state retention electronic devices. In embodiments, an electronic device may include a state retention flip-flop having a plurality of P-type metal oxide semiconductor (PMOS) devices coupled with a common N-well, with one or more of the plurality of PMOS devices powered by an always-on supply and one or more of the plurality of PMOS devices powered by a power-gated supply. Other embodiments may be described and claimed.

Abstract: A device and method of the present invention provides application of low-energy acoustic waves to indwelling surfaces of a catheter in order to remove and prevent microbial biofilm formation. The low-energy acoustic waves are generated by an electrically activated piezo element. The device can take the form of a luer connector configured to couple to the hub of the indwelling catheter or can take the form of a catheter insert. The characteristics of the acoustic waves can be varied in order to inhibit bacterial adhesion to the indwelling surfaces of the catheter. Moreover, the characteristics of the acoustic waves must also be in a range so as to not induce bacterial adhesion to the indwelling catheter surfaces.

Abstract: Disclosed is a system and device and related methods for data manipulation, especially for SIMD operations such as permute, shift, and rotate. An apparatus includes a permute section that repositions data on sub-word boundaries and a shift section that repositions the data distances smaller than the sub-word width. The sub-word width is configurable and selectable, and the permute section and shift section may operate on different boundary widths. In a first stage, the permute section repositions the data at the nearest sub-word boundary and, in a second stage, the shift section repositions the data to its final desired position. The shift section includes multi-stages set in a logarithmic cascade relationship. Additionally, each shifter within each of the multi-stages is highly connected, allowing fast and precise data movements.

Abstract: In one embodiment, the invention includes a method for compressing video data using redundant binary mathematics. Other embodiments are described and claimed.

Abstract: An improved Wafer-Level Chip-Scale Packaging (WLCSP) process is described that includes forming a plurality of conductive pillars on a first surface of a semiconductor wafer. One or more grooves are dry etched into the first surface of the semiconductor wafer, where the grooves define at least one boundary between each of a plurality of die within the semiconductor wafer. A layer of encapsulating material is deposited over the first surface. A recess is then cut in each of the grooves through the encapsulating material, where the cutting leaves a piece of semiconductor material on the second surface of the semiconductor wafer. The second surface is then ground to remove the piece of semiconductor material, where the removal of this material separates the plurality of die.

Abstract: A circuit structure is provided. The circuit structure includes a capacitor including a top capacitor electrode; a bottom capacitor electrode parallel to the top capacitor electrode; and an insulating layer between the top and the bottom capacitor electrodes. The insulating layer includes a dielectric rod enclosed by a dielectric material. The dielectric rod has a higher dielectric constant than that of the dielectric material. The circuit structure may be a printed circuit board or packaging substrate, wherein the capacitor is formed between the two layers of the capacitor. Additional dielectric rods may be formed in the insulating layer of the capacitor and spaced apart from the dielectric rods.

Abstract: A method of forming a packaging structure and the packages formed thereof are provided. The method includes providing a package having a top surface and placing solder balls on the top surface of the package. A coplanar surface is then placed against the solder balls, wherein the surface is non-adhesive. A reflow process is performed to the solder balls, so that top surfaces of the solder balls are substantially coplanar. The coplanar surface is then removed.

Abstract: A venous-arterial detector is disclosed. The detector includes a first chamber in fluid communication with a needle, and an indicator chamber in selective fluid communication with the first chamber through a valve. The indicator chamber is pre-pressurized to a defined pressure that preferably exceeds typical venous pressure, and the valve retains that pressure within the indicator chamber. When the needle is inserted into a vessel, if the pressure in the vessel is greater than the defined pressure in the indicator chamber, blood will flow into the indicator chamber, indicating that the vessel is most likely to be an artery.

Abstract: An integrated circuit structure and methods for forming the same are provided. The integrated circuit structure includes a substrate; a through-silicon via (TSV) extending into the substrate; a TSV pad spaced apart from the TSV; and a metal line over, and electrically connecting, the TSV and the TSV pad.

Abstract: A circuit structure is provided. The circuit structure includes a capacitor including a top capacitor electrode; a bottom capacitor electrode parallel to the top capacitor electrode; and an insulating layer between the top and the bottom capacitor electrodes. The insulating layer includes a dielectric rod enclosed by a dielectric material. The dielectric rod has a higher dielectric constant than that of the dielectric material. The circuit structure may be a printed circuit board or packaging substrate, wherein the capacitor is formed between the two layers of the capacitor. Additional dielectric rods may be formed in the insulating layer of the capacitor and spaced apart from the dielectric rods.