Patents by Inventor Steven J. Holmes

Steven J. Holmes has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200009369
    Abstract: A nanodevice includes an array of metal nanorods formed on a substrate. An electropolymerized electrical conductor is formed over tops of a portion of the nanorods to form a reservoir between the electropolymerized conductor and the substrate. The electropolymerized conductor includes pores that open or close responsively to electrical signals applied to the nanorods. A cell loading region is disposed in proximity of the reservoir, and the cell loading region is configured to receive stem cells. A neurotrophic dispensing material is loaded in the reservoir to be dispersed in accordance with open pores to affect growth of the stem cells when in vivo.
    Type: Application
    Filed: September 17, 2019
    Publication date: January 9, 2020
    Inventors: Steven J. Holmes, Qinghuang Lin, Emily R. Kinser, Nathan P. Marchack, Roy R. Yu
  • Publication number: 20200009368
    Abstract: A nanodevice includes an array of metal nanorods formed on a substrate. An electropolymerized electrical conductor is formed over tops of a portion of the nanorods to form a reservoir between the electropolymerized conductor and the substrate. The electropolymerized conductor includes pores that open or close responsively to electrical signals applied to the nanorods. A cell loading region is disposed in proximity of the reservoir, and the cell loading region is configured to receive stem cells. A neurotrophic dispensing material is loaded in the reservoir to be dispersed in accordance with open pores to affect growth of the stem cells when in vivo.
    Type: Application
    Filed: September 17, 2019
    Publication date: January 9, 2020
    Inventors: Steven J. Holmes, Qinghuang Lin, Emily R. Kinser, Nathan P. Marchack, Roy R. Yu
  • Patent number: 10478525
    Abstract: A demineralized bone matrix is produced by a process in which a bone body is placed in a first processing solution comprising an acid to demineralize the bone body. The bone body is periodically removed from the first solution at specific time intervals to perform at least one test, such as a compression test, on a mechanical property of the bone body. When the test yields a desired result, the bone body is exposed to a second processing solution that is less acidic than the first, thus minimizing the exposure of the bone body to the harsh acidic conditions of the demineralization phase of the process.
    Type: Grant
    Filed: July 29, 2015
    Date of Patent: November 19, 2019
    Assignee: BACTERIN INTERNATIONAL, INC.
    Inventors: Nancy J. Shelby, Steven M. Scott, Benjamin P. Luchsinger, Gregory A. Juda, Kelly R. Kirker, Darrel L. Holmes, Jesus Hernandez
  • Publication number: 20190240252
    Abstract: The present invention relates to crosslinked polyamine particles and/or pharmaceutical compositions comprising, at least in part, crosslinked polyamine particles and aggregates of such particles (including cured aggregates of crosslinked polyamine particles). The compositions may be in the form of tablets comprising, for example, particles larger than 500 ?m, and used for treating patients, for example, patients with hyperphosphatemia.
    Type: Application
    Filed: February 4, 2019
    Publication date: August 8, 2019
    Inventors: Stephen Randall HOLMES-FARLEY, David J. HARRIS, Steven C. POLOMOSCANIK, Adnan SALAMEH, Bruce SHUTTS, Richard SILVA, Pradeep K. DHAL, Lynne SOLE
  • Publication number: 20190143095
    Abstract: A nanodevice includes an array of metal nanorods formed on a substrate. An electropolymerized electrical conductor is formed over tops of a portion of the nanorods to form a reservoir between the electropolymerized conductor and the substrate. The electropolymerized conductor includes pores that open or close responsively to electrical signals applied to the nanorods. A cell loading region is disposed in proximity of the reservoir, and the cell loading region is configured to receive stem cells. A neurotrophic dispensing material is loaded in the reservoir to be dispersed in accordance with open pores to affect growth of the stem cells when in vivo.
    Type: Application
    Filed: November 13, 2017
    Publication date: May 16, 2019
    Inventors: Steven J. Holmes, Qinghuang Lin, Emily R. Kinser, Nathan P. Marchack, Roy R. Yu
  • Publication number: 20190101504
    Abstract: Embodiments of the invention are directed to a biosensing integrated circuit (IC). A non-limiting example of the biosensing IC includes a plurality of semiconductor substrate layers. A sensor element is formed over a first one of the plurality of semiconductor substrate layers, wherein the sensor element is configured to, based at least in part on the sensor element interacting with a predetermined material, generate data representing a measurable electrical parameter. An adhesion enhancement region is configured to physically couple the sensor element to the first one of the plurality of semiconductor substrate layers. In some embodiments of the invention, the biosensing IC further includes an electrically conductive interconnect network configured to communicatively couple the data representing the measurable electrical parameter to computer elements.
    Type: Application
    Filed: November 3, 2017
    Publication date: April 4, 2019
    Inventors: Hariklia Deligianni, Bruce B. Doris, Damon B. Farmer, Steven J. Holmes, Qinghuang Lin, Nathan P. Marchack, Deborah A. Neumayer, Roy R. Yu
  • Publication number: 20190101503
    Abstract: Embodiments of the invention are directed to a biosensing integrated circuit (IC). A non-limiting example of the biosensing IC includes a plurality of semiconductor substrate layers. A sensor element is formed over a first one of the plurality of semiconductor substrate layers, wherein the sensor element is configured to, based at hleast in part on the sensor element interacting with a predetermined material, generate data representing a measureable electrical parameter. An adhesion enhancement region is configured to physically couple the sensor element to the first one of the plurality of semiconductor substrate layers. In some embodiments of the invention, the biosensing IC further includes an electrically conductive interconnect network configured to communicatively couple the data representing the measureable electrical parameter to computer elements.
    Type: Application
    Filed: September 29, 2017
    Publication date: April 4, 2019
    Inventors: Hariklia Deligianni, Bruce B. Doris, Damon B. Farmer, Steven J. Holmes, Qinghuang Lin, Nathan P. Marchack, Deborah A. Neumayer, Roy R. Yu
  • Publication number: 20190048382
    Abstract: Embodiments of the present invention are directed to a semiconductor device. A non-limiting example of the semiconductor device includes a semiconductor substrate. The semiconductor device also includes a plurality of metal nanopillars formed on the substrate. The semiconductor device also includes an amperometric sensor associated with one of the plurality of nanopillars, wherein the amperometric sensor is selective to an enzyme-active neurotransmitter. The semiconductor device also includes a resistivity sensor associated with a pair of nanopillars, wherein the resistivity sensor is selective to an analyte.
    Type: Application
    Filed: August 8, 2017
    Publication date: February 14, 2019
    Inventors: HARIKLIA DELIGIANNI, BRUCE B. DORIS, STEVEN J. HOLMES, QINGHUANG LIN, ROY R. YU
  • Publication number: 20180339321
    Abstract: A biosensor includes an array of metal nanorods formed on a substrate. An electropolymerized conductor is formed over tops of a portion of the nanorods to form a reservoir between the electropolymerized conductor and the substrate. The electropolymerized conductor includes pores that open and close responsively to electrical signals applied to the nanorods. A dispensing material is loaded in the reservoir to be dispersed in accordance with open pores.
    Type: Application
    Filed: November 13, 2017
    Publication date: November 29, 2018
    Inventors: Steven J. Holmes, Emily R. Kinser, Qinghuang Lin, Nathan P. Marchack, Roy R. Yu
  • Publication number: 20180339320
    Abstract: A biosensor includes an array of metal nanorods formed on a substrate. An electropolymerized conductor is formed over tops of a portion of the nanorods to form a reservoir between the electropolymerized conductor and the substrate. The electropolymerized conductor includes pores that open and close responsively to electrical signals applied to the nanorods. A dispensing material is loaded in the reservoir to be dispersed in accordance with open pores.
    Type: Application
    Filed: May 23, 2017
    Publication date: November 29, 2018
    Inventors: Steven J. Holmes, Emily R. Kinser, Qinghuang Lin, Nathan P. Marchack, Roy R. Yu
  • Publication number: 20180340203
    Abstract: A biosensor includes an array of electrically conductive nanorods formed on a substrate. The nanorods each includes a nanoscale porous coating formed on a surface of the nanorods from silicon dioxide layers. An enzyme coating is bound to the porous coating.
    Type: Application
    Filed: May 23, 2017
    Publication date: November 29, 2018
    Inventors: Steven J. Holmes, Emily R. Kinser, Qinghuang Lin, Nathan P. Marchack, Roy R. Yu
  • Publication number: 20180340204
    Abstract: A biosensor includes an array of electrically conductive nanorods formed on a substrate. The nanorods each includes a nanoscale porous coating formed on a surface of the nanorods from silicon dioxide layers. An enzyme coating is bound to the porous coating.
    Type: Application
    Filed: November 13, 2017
    Publication date: November 29, 2018
    Inventors: Steven J. Holmes, Emily R. Kinser, Qinghuang Lin, Nathan P. Marchack, Roy R. Yu
  • Publication number: 20180339154
    Abstract: A sensing and treatment device includes an array of metal nanorod electrodes formed on a substrate, the array including first electrodes for sensing, and second electrodes for electrical pulsation. A data processing system is configured to monitor a parameter using the first electrodes and to activate the electrical pulsation in the second electrodes in accordance with a reading of the parameter.
    Type: Application
    Filed: May 23, 2017
    Publication date: November 29, 2018
    Inventors: Hariklia Deligianni, Bruce B. Doris, Steven J. Holmes, Emily R. Kinser, Qinghuang Lin, Roy R. Yu
  • Publication number: 20180339155
    Abstract: A sensing and treatment device includes an array of metal nanorod electrodes formed on a substrate, the array including first electrodes for sensing, and second electrodes for electrical pulsation. A data processing system is configured to monitor a parameter using the first electrodes and to activate the electrical pulsation in the second electrodes in accordance with a reading of the parameter.
    Type: Application
    Filed: November 9, 2017
    Publication date: November 29, 2018
    Inventors: Hariklia Deligianni, Bruce B. Doris, Steven J. Holmes, Emily R. Kinser, Qinghuang Lin, Roy R. Yu
  • Patent number: 9660030
    Abstract: A dielectric disposable gate structure can be formed across a semiconductor material portion, and active semiconductor regions are formed within the semiconductor material portion. Raised active semiconductor regions are grown over the active semiconductor regions while the dielectric disposable gate structure limits the extent of the raised active semiconductor regions. A planarization dielectric layer is formed over the raised active semiconductor regions. In one embodiment, the dielectric disposable gate structure is removed, and a dielectric gate spacer can be formed by conversion of surface portions of the raised active semiconductor regions around a gate cavity. Alternately, an etch mask layer overlying peripheral portions of the disposable gate structure can be formed, and a gate cavity and a dielectric spacer can be formed by anisotropically etching an unmasked portion of the dielectric disposable gate structure. A replacement gate structure can be formed in the gate cavity.
    Type: Grant
    Filed: August 29, 2014
    Date of Patent: May 23, 2017
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Shom Ponoth, Marc A. Bergendahl, Steven J. Holmes, David V. Horak, Charles W. Koburger, III, Chih-Chao Yang
  • Patent number: 9431250
    Abstract: Various methods include: forming an opening in a resist layer to expose a portion of an underlying blocking layer; performing an etch on the exposed portion of the blocking layer to expose a portion of an etch stop layer, wherein the etch stop layer resists etching during the etch of the exposed portion of the blocking layer; etching the exposed portion of the etch stop layer to expose a portion of a substrate below the exposed portion of the etch stop layer and leave a remaining portion of the etch stop layer; and ion implanting the exposed portion of the substrate, wherein the blocking layer prevents ion implanting of the substrate outside of the exposed portion.
    Type: Grant
    Filed: March 6, 2014
    Date of Patent: August 30, 2016
    Assignee: International Business Machines Corporation
    Inventors: Martin Glodde, Steven J. Holmes, Daiji Kawamura
  • Patent number: 9425053
    Abstract: A trilayer stack that can be used as a block mask for forming patterning features in semiconductor structures with high aspect ratio topography is provided. The trilayer stack includes an organic planarization (OPL) layer, a titanium-containing antireflective coating (TiARC) layer on the OPL layer and a photoresist layer on the TiARC layer. Employing a combination of an OPL having a high etch rate and a TiARC layer that can be easily removed by a mild chemical etchant solution in the trilayer stack can significantly minimize substrate damage during lithographic patterning processes.
    Type: Grant
    Filed: June 27, 2014
    Date of Patent: August 23, 2016
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Martin Glodde, Steven J. Holmes, Daiji Kawamura
  • Patent number: 9373580
    Abstract: A first metallic hard mask layer over an interconnect-level dielectric layer is patterned with a line pattern. At least one dielectric material layer, a second metallic hard mask layer, a first organic planarization layer (OPL), and a first photoresist are applied above the first metallic hard mask layer. A first via pattern is transferred from the first photoresist layer into the second metallic hard mask layer. A second OPL and a second photoresist are applied and patterned with a second via pattern, which is transferred into the second metallic hard mask layer. A first composite pattern of the first and second via patterns is transferred into the at least one dielectric material layer. A second composite pattern that limits the first composite pattern with the areas of the openings in the first metallic hard mask layer is transferred into the interconnect-level dielectric layer.
    Type: Grant
    Filed: December 24, 2013
    Date of Patent: June 21, 2016
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: John C. Arnold, Sean D. Burns, Steven J. Holmes, David V. Horak, Muthumanickam Sankarapandian, Yunpeng Yin
  • Patent number: 9356046
    Abstract: Embodiments of the present invention provide an improved structure and method for forming CMOS field effect transistors. In embodiments, silicon germanium (SiGe) is formed on a PFET side of a semiconductor structure, while silicon is disposed on an NFET side of a semiconductor structure. A narrow isolation region is formed between the PFET and NFET. The NFET fins are comprised of silicon and the PFET fins are comprised of silicon germanium.
    Type: Grant
    Filed: November 22, 2013
    Date of Patent: May 31, 2016
    Assignee: GlobalFoundries Inc.
    Inventors: Kangguo Cheng, Bruce B. Doris, Steven J. Holmes, Ali Khakifirooz
  • Patent number: 9269621
    Abstract: A stack of a first metal line and a first dielectric cap material portion is formed within a line trench of first dielectric material layer. A second dielectric material layer is formed thereafter. A line trench extending between the top surface and the bottom surface of the second dielectric material layer is patterned. A photoresist layer is applied over the second dielectric material layer and patterned with a via pattern. An underlying portion of the first dielectric cap material is removed by an etch selective to the dielectric materials of the first and second dielectric material layer to form a via cavity that is laterally confined along the widthwise direction of the line trench and along the widthwise direction of the first metal line. A dual damascene line and via structure is formed, which includes a via structure that is laterally confined along two independent horizontal directions.
    Type: Grant
    Filed: August 1, 2014
    Date of Patent: February 23, 2016
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Steven J. Holmes, David V. Horak, Charles W. Koburger, III, Shom Ponoth, Chih-Chao Yang