Patents by Inventor Steven J. Holmes

Steven J. Holmes has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11411160
    Abstract: Techniques regarding qubit devices comprising silicon-based Josephson junctions and/or the manufacturing of qubit devices comprising silicon-based Josephson junctions are provided. For example, one or more embodiments described herein can comprise an apparatus that can include a Josephson junction comprising a tunnel barrier positioned between two vertically stacked superconducting silicon electrodes.
    Type: Grant
    Filed: January 21, 2020
    Date of Patent: August 9, 2022
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Steven J. Holmes, Devendra K. Sadana, Brent A. Wacaser, Damon Farmer
  • Publication number: 20220238663
    Abstract: Devices, systems, methods, computer-implemented methods, apparatus, and/or computer program products that can facilitate a suspended Majorana fermion device comprising an ion implant defined nanorod in a semiconducting device are provided. According to an embodiment, a quantum computing device can comprise a Majorana fermion device coupled to an ion implanted region. The quantum computing device can further comprise an encapsulation film coupled to the ion implanted region and a substrate layer. The encapsulation film suspends the Majorana fermion device in the quantum computing device.
    Type: Application
    Filed: April 18, 2022
    Publication date: July 28, 2022
    Inventors: Steven J. Holmes, Devendra K. Sadana, Sean Hart, Patryk Gumann, Stephen W. Bedell, Ning Li
  • Patent number: 11380836
    Abstract: Devices, systems, and/or methods that can facilitate topological quantum computing are provided. According to an embodiment, a device can comprise a circuit layer formed on a wiring layer of the device and that comprises control components. The device can further comprise a topological qubit device formed on the circuit layer and that comprises a nanorod capable of hosting Majorana fermions and a quantum well tunable Josephson junction that is coupled to the control components.
    Type: Grant
    Filed: March 16, 2020
    Date of Patent: July 5, 2022
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Steven J. Holmes, Timothy Mathew Philip, Sagarika Mukesh, Youngseok Kim, Devendra K. Sadana, Robert Robison
  • Patent number: 11370004
    Abstract: A biosensor includes an array of metal nanorods formed on a substrate. An electropolymerized conductor is formed over tops of a portion of the nanorods to form a reservoir between the electropolymerized conductor and the substrate. The electropolymerized conductor includes pores that open and close responsively to electrical signals applied to the nanorods. A dispensing material is loaded in the reservoir to be dispersed in accordance with open pores.
    Type: Grant
    Filed: November 26, 2019
    Date of Patent: June 28, 2022
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Steven J. Holmes, Emily R. Kinser, Qinghuang Lin, Nathan P. Marchack, Roy R. Yu
  • Publication number: 20220181535
    Abstract: Devices, systems, methods, computer-implemented methods, apparatus, and/or computer program products that can facilitate an epitaxial Josephson junction transmon device are provided. According to an embodiment, a device can comprise a substrate. The device can further comprise an epitaxial Josephson junction transmon device coupled to the substrate. According to an embodiment, a device can comprise an epitaxial Josephson junction transmon device coupled to a substrate. The device can further comprise a tuning gate coupled to the substrate and formed across the epitaxial Josephson junction transmon device. According to an embodiment, a device can comprise a first superconducting region and a second superconducting region formed on a substrate. The device can further comprise an epitaxial Josephson junction tunneling channel coupled to the first superconducting region and the second superconducting region.
    Type: Application
    Filed: January 9, 2020
    Publication date: June 9, 2022
    Inventors: Steven J. Holmes, Devendra K. Sadana, Brent A. Wacaser, Damon Farmer
  • Patent number: 11349061
    Abstract: According to an embodiment of the present invention, a method of producing a computing device includes providing a semiconductor substrate, and patterning a mask on the semiconductor substrate, the mask exposing a first portion of the semiconductor substrate and covering a second portion of the semiconductor substrate. The method includes implanting the first portion of the semiconductor substrate with a dopant. The method includes annealing the first portion of the semiconductor substrate to form an annealed doped region, while maintaining the second portion of the semiconductor substrate as an unannealed portion.
    Type: Grant
    Filed: June 8, 2020
    Date of Patent: May 31, 2022
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Steven J. Holmes, Devendra K. Sadana, Brent A. Wacaser, Damon Brooks Farmer
  • Patent number: 11315613
    Abstract: Systems and methods for operating a digital-to-analog converter (DAC) are described. In an example, a device can receive a digital input. The device can generate a clock signal having frequency in radio frequency (RF) range. The device can combine the digital input with the clock signal to generate a first voltage signal. The device can convert the first voltage signal into a second voltage signal having at least two phases. The device can convert the second voltage signal into a current signal. The device can distribute the current signal to at least one current mode DAC.
    Type: Grant
    Filed: March 2, 2020
    Date of Patent: April 26, 2022
    Assignee: International Business Machines Corporation
    Inventors: Sudipto Chakraborty, Rajiv Joshi, Steven J. Holmes, Bruce B. Doris
  • Patent number: 11316022
    Abstract: Devices, systems, methods, computer-implemented methods, apparatus, and/or computer program products that can facilitate a suspended Majorana fermion device comprising an ion implant defined nanorod in a semiconducting device are provided. According to an embodiment, a quantum computing device can comprise a Majorana fermion device coupled to an ion implanted region. The quantum computing device can further comprise an encapsulation film coupled to the ion implanted region and a substrate layer. The encapsulation film suspends the Majorana fermion device in the quantum computing device.
    Type: Grant
    Filed: November 19, 2019
    Date of Patent: April 26, 2022
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Steven J. Holmes, Devendra K. Sadana, Sean Hart, Patryk Gumann, Stephen W. Bedell, Ning Li
  • Patent number: 11311233
    Abstract: A sensing and treatment device includes an array of metal nanorod electrodes formed on a substrate, the array including first electrodes for sensing, and second electrodes for electrical pulsation. A data processing system is configured to monitor a parameter using the first electrodes and to activate the electrical pulsation in the second electrodes in accordance with a reading of the parameter.
    Type: Grant
    Filed: May 23, 2017
    Date of Patent: April 26, 2022
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Hariklia Deligianni, Bruce B. Doris, Steven J. Holmes, Emily R. Kinser, Qinghuang Lin, Roy R. Yu
  • Patent number: 11311234
    Abstract: A sensing and treatment device includes an array of metal nanorod electrodes formed on a substrate, the array including first electrodes for sensing, and second electrodes for electrical pulsation. A data processing system is configured to monitor a parameter using the first electrodes and to activate the electrical pulsation in the second electrodes in accordance with a reading of the parameter.
    Type: Grant
    Filed: November 9, 2017
    Date of Patent: April 26, 2022
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Hariklia Deligianni, Bruce B. Doris, Steven J. Holmes, Emily R. Kinser, Qinghuang Lin, Roy R. Yu
  • Patent number: 11309479
    Abstract: A within-chip magnetic field control device is formed in proximity to a Josephson Junction (JJ) structure. The within-chip magnetic field control device includes wiring structures that are located laterally adjacent to the JJ structure. In some embodiments, the magnetic field control device also includes, in addition to the wiring structures, a conductive plate that is connected to the wiring structures and is located beneath the JJ structure. Use of electrical current through the wiring structures induces, either directly or indirectly, a magnetic field into the JJ structure. The strength of the field can be modulated by the amount of current passing through the wiring structures. The magnetic field can be turned off as needed by ceasing to allow current to flow through the wiring structures.
    Type: Grant
    Filed: December 6, 2019
    Date of Patent: April 19, 2022
    Assignee: International Business Machines Corporation
    Inventors: Steven J. Holmes, Bruce B. Doris, Matthias Georg Gottwald, Rajiv Joshi, Sudipto Chakraborty
  • Patent number: 11302857
    Abstract: A method for fabricating an active cooling structure, comprising forming an array of Superconductor-Insulator-Normal Metal (NIS) tunnel structures between a non-conducting layer and a superconducting layer. The non-superconducting layer may comprise a plurality of non-superconducting traces running in a first direction. The superconductor layer may comprise a plurality of superconducting traces running in a second direction.
    Type: Grant
    Filed: November 19, 2019
    Date of Patent: April 12, 2022
    Assignee: International Business Machines Corporation
    Inventors: Steven J. Holmes, Devendra K. Sadana, Stephen W. Bedell, Ning Li
  • Patent number: 11276912
    Abstract: A high input impedance magnetic balun/transformer having a phase balancing network (PBN) and method of operating. The balun is fully configurable and trimmable post fabrication using independently adjustable resistive and reactive parts by changing the resistance of a programmed transistor, e.g., NMOS. Parallel connected legs each having a field effect transistors (FETs) that make up NMOS device alter the impedance at the balun output terminals. The ground terminal of a secondary winding or coil at an unbalanced, single-ended side is connected to a phase balancing network. The phase balancing network includes at least two parallel legs, each leg having a resistive element in the form of a transistor device and at least one leg including a capacitive element. The transistor device at a leg can be operated in a linear region to trim the resistance and capacitances at the unbalanced side in order to achieve proper phase balancing and amplitude matching.
    Type: Grant
    Filed: December 28, 2020
    Date of Patent: March 15, 2022
    Assignee: International Business Machines Corporation
    Inventors: Sudipto Chakraborty, Rajiv Joshi, Steven J. Holmes, Bruce B. Doris
  • Patent number: 11220742
    Abstract: A method of fabricating a glassy carbon film is described. The method includes forming a soluble layer on a substrate, forming a lift-off stack that includes a lift-off mask layer and a hard-mask layer, and forming a pattern in the lift-off stack to expose a portion of the soluble layer. The exposed portions of the soluble layer are removed to expose a portion of the substrate. A carbon material is over the exposed portion of the substrate. The soluble layer is dissolved in a solvent, and the lift-off stack is lifted-off.
    Type: Grant
    Filed: March 22, 2019
    Date of Patent: January 11, 2022
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Steven J. Holmes, Deborah A. Neumayer, Stephen Bedell, Devendra K. Sadana, Damon Farmer, Nathan P. Marchack
  • Patent number: 11211542
    Abstract: An active cooling structure, comprising a non-superconducting layer, a superconducting layer, and an array of Superconductor-Insulator-Normal Metal (NIS) tunnel junctions. The non-superconducting layer may comprise a plurality of non-superconducting traces. The superconducting layer may comprise a plurality of superconducting traces. The array of Superconductor-Insulator-Normal Metal (NIS) tunnel junctions may be located between the plurality of non-superconducting traces and the plurality of superconducting traces.
    Type: Grant
    Filed: November 19, 2019
    Date of Patent: December 28, 2021
    Assignee: International Business Machines Corporation
    Inventors: Steven J. Holmes, Devendra K. Sadana, Stephen W. Bedell, Ning Li
  • Publication number: 20210384405
    Abstract: According to an embodiment of the present invention, a method of producing a computing device includes providing a semiconductor substrate, and patterning a mask on the semiconductor substrate, the mask exposing a first portion of the semiconductor substrate and covering a second portion of the semiconductor substrate. The method includes implanting the first portion of the semiconductor substrate with a dopant. The method includes annealing the first portion of the semiconductor substrate to form an annealed doped region, while maintaining the second portion of the semiconductor substrate as an unannealed portion.
    Type: Application
    Filed: June 8, 2020
    Publication date: December 9, 2021
    Inventors: Steven J. Holmes, Devendra K. Sadana, Brent A. Wacaser, Damon Brooks Farmer
  • Patent number: 11195086
    Abstract: Techniques are disclosed for fabricating and using a neuromorphic computing device including biological neurons. For example, a method for fabricating a neuromorphic computing device includes forming a channel in a first substrate and forming at least one sensor in a second substrate. At least a portion of the channel in the first substrate is seeded with a biological neuron growth material. The second substrate is attached to the first substrate such that the at least one sensor is proximate to the biological neuron growth material and growth of the seeded biological neuron growth material is stimulated to grow a neuron in the at least a portion of the channel.
    Type: Grant
    Filed: May 28, 2019
    Date of Patent: December 7, 2021
    Assignee: International Business Machines Corporation
    Inventors: Steven J. Holmes, Devendra K. Sadana, Stephen W. Bedell, Teodor K. Todorov
  • Patent number: 11174545
    Abstract: In an embodiment, a fabrication method comprises forming first and second electrodes over a substrate that includes a nanowire that extends between, and beneath portions of, the first and second electrodes. The method also includes forming a mask structure that defines at least one opening over a portion of the nanowire and defines at least one overhang portion over a gap between the substrate and the mask. The method further includes depositing a first gate electrode on the substrate and overlapping a third region of the nanowire, and depositing a second gate electrode on the substrate and overlapping a fourth region of the nanowire. The depositing of the first gate electrode includes depositing conductive material through the at least one opening from a first oblique angle, and the depositing of the second gate electrode includes depositing conductive material through the at least one opening from a second oblique angle.
    Type: Grant
    Filed: November 6, 2019
    Date of Patent: November 16, 2021
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Steven J. Holmes, Devendra K. Sadana, Stephen W. Bedell, Ning Li
  • Patent number: 11177427
    Abstract: According to an embodiment of the present invention, a method for fabricating a Majorana fermion structure includes providing a substrate, and depositing a superconducting material on the substrate. The method includes depositing a magnetic material on the superconducting material using angled deposition through a mask. The method includes annealing the magnetic material and the superconducting material to form a magnetic nanowire partially embedded in the superconducting material such that the magnetic nanowire and the superconducting material form a Majorana fermion structure.
    Type: Grant
    Filed: February 14, 2020
    Date of Patent: November 16, 2021
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Stephen W. Bedell, Steven J. Holmes, Ning Li, Devendra K. Sadana
  • Publication number: 20210320240
    Abstract: A vertical Josephson junction device includes a substrate, and an epitaxial stack formed on the substrate. The vertical Josephson junction device includes a first superconducting electrode embedded in the epitaxial stack, and a second superconducting electrode embedded in the epitaxial stack, the second superconducting electrode being separated from the first superconducting electrode by a dielectric layer. In operation, the first superconducting electrode, the dielectric layer, and the second superconducting electrode form a vertical Josephson junction.
    Type: Application
    Filed: April 13, 2020
    Publication date: October 14, 2021
    Inventors: Steven J. Holmes, Devendra K. Sadana