Abstract: A quantum computing device is fabricated by forming, on a superconductor layer, a first resist pattern defining a device region and a sensing region within the device region. The superconductor layer within the sensing region is removed, exposing a region of an underlying semiconductor layer outside the device region. The exposed region of the semiconductor layer is implanted, forming an isolation region surrounding the device region. Using an etching process subsequent to the implanting, the sensing region and a portion of the device region of the superconductor layer adjacent to the isolation region are exposed. By depositing a first metal layer within the sensing region, a tunnel junction gate is formed. A sensing region gate is formed by coupling the semiconductor layer with a second metal layer. A nanorod contact using the second metal within the portion of the device region outside the sensing region is formed.

Abstract: A quantum computing device is fabricated by forming, on a superconductor layer, a first resist pattern defining a device region and a sensing region within the device region. The superconductor layer within the sensing region is removed, exposing a region of an underlying semiconductor layer outside the device region. The exposed region of the semiconductor layer is implanted, forming an isolation region surrounding the device region. Using an etching process subsequent to the implanting, the sensing region and a portion of the device region of the superconductor layer adjacent to the isolation region are exposed. By depositing a first metal layer within the sensing region, a tunnel junction gate is formed. A reflectrometry wire comprising a second metal within the reflectrometry region is formed. A nanorod contact using the second metal within the portion of the device region outside the sensing region is formed.

Abstract: A deposition system includes a deposition source and a scanning stage disposed within a deposition path of the deposition source. The scanning stage includes a support platform configured to support a wafer thereon, and a mechanical actuator coupled to the support platform. The mechanical actuator is configured to translate the support platform with respect to the deposition source. The deposition system includes a proximity mask disposed within the deposition path of the deposition source between the deposition source and the scanning stage, the proximity mask defining a slit. The deposition system includes a controller in communication with the scanning stage, the controller configured to control the mechanical actuator to translate the wafer with respect to the slit such that an angle of deposition remains substantially constant. In operation, the proximity mask prevents deposition source material having a trajectory that is out of alignment with the slit from contacting the wafer.

Abstract: In an embodiment, a fabrication method comprises forming first and second electrodes over a substrate that includes a nanowire that extends between, and beneath portions of, the first and second electrodes. The method also includes forming a mask structure that defines at least one opening over a portion of the nanowire and defines at least one overhang portion over a gap between the substrate and the mask. The method further includes depositing a first gate electrode on the substrate and overlapping a third region of the nanowire, and depositing a second gate electrode on the substrate and overlapping a fourth region of the nanowire. The depositing of the first gate electrode includes depositing conductive material through the at least one opening from a first oblique angle, and the depositing of the second gate electrode includes depositing conductive material through the at least one opening from a second oblique angle.

Abstract: A method of producing a quantum circuit includes forming a mask on a substrate to cover a first portion of the substrate, implanting a second portion of the substrate with ions, and removing the mask, thereby providing a nanowire. The method further includes forming a first lead and a second lead, the first lead and the second lead each partially overlapping the nanowire. In operation, a portion of the nanowire between the first and second leads forms a quantum dot, thereby providing a quantum dot Josephson junction. The method further includes forming a third lead and a fourth lead, one of the third and fourth leads partially overlapping the nanowire, wherein the third lead is separated from the fourth lead by a dielectric layer, thereby providing a Dolan bridge Josephson junction. The nanowire is configured to connect the quantum dot Josephson junction and the Dolan bridge Josephson junction in series.

Abstract: Embodiments of the present invention are directed to a semiconductor device. A non-limiting example of the semiconductor device includes a semiconductor substrate. The semiconductor device also includes a plurality of metal nanopillars formed on the substrate. The semiconductor device also includes an amperometric sensor associated with one of the plurality of nanopillars, wherein the amperometric sensor is selective to an enzyme-active neurotransmitter. The semiconductor device also includes a resistivity sensor associated with a pair of nanopillars, wherein the resistivity sensor is selective to an analyte.

Abstract: A method of producing a quantum circuit includes forming a mask on a substrate to cover a first portion of the substrate, implanting a second portion of the substrate with ions, and removing the mask, thereby providing a nanowire. The method further includes forming a first lead and a second lead, the first lead and the second lead each partially overlapping the nanowire. In operation, a portion of the nanowire between the first and second leads forms a quantum dot, thereby providing a quantum dot Josephson junction. The method further includes forming a third lead and a fourth lead, one of the third and fourth leads partially overlapping the nanowire, wherein the third lead is separated from the fourth lead by a dielectric layer, thereby providing a Dolan bridge Josephson junction. The nanowire is configured to connect the quantum dot Josephson junction and the Dolan bridge Josephson junction in series.

Abstract: A nanodevice includes an array of metal nanorods formed on a substrate. An electropolymerized electrical conductor is formed over tops of a portion of the nanorods to form a reservoir between the electropolymerized conductor and the substrate. The electropolymerized conductor includes pores that open or close responsively to electrical signals applied to the nanorods. A cell loading region is disposed in proximity of the reservoir, and the cell loading region is configured to receive stem cells. A neurotrophic dispensing material is loaded in the reservoir to be dispersed in accordance with open pores to affect growth of the stem cells when in vivo.

Abstract: A nanodevice includes an array of metal nanorods formed on a substrate. An electropolymerized electrical conductor is formed over tops of a portion of the nanorods to form a reservoir between the electropolymerized conductor and the substrate. The electropolymerized conductor includes pores that open or close responsively to electrical signals applied to the nanorods. A cell loading region is disposed in proximity of the reservoir, and the cell loading region is configured to receive stem cells. A neurotrophic dispensing material is loaded in the reservoir to be dispersed in accordance with open pores to affect growth of the stem cells when in vivo.

Abstract: A high input impedance magnetic balun/transformer having a phase balancing network (PBN) and method of operating. The balun is fully configurable and trimmable post fabrication using independently adjustable resistive and reactive parts by changing the resistance of a programmed transistor, e.g., NMOS. Parallel connected legs each having a field effect transistors (FETs) that make up NMOS device alter the impedance at the balun output terminals. The ground terminal of a secondary winding or coil at an unbalanced, single-ended side is connected to a phase balancing network. The phase balancing network includes at least two parallel legs, each leg having a resistive element in the form of a transistor device and at least one leg including a capacitive element. The transistor device at a leg can be operated in a linear region to trim the resistance and capacitances at the unbalanced side in order to achieve proper phase balancing and amplitude matching.

Abstract: A method includes implanting an implantable biosensor within a subject where the implantable biosensor has an array of light sources and an array of light detectors, activating the array of light sources to direct light signals at a targeted tissue site in the subject, capturing, with the light detectors, the light signals reflected off the targeted site, calculating a roundtrip propagation time for each of the light signals and comparing the roundtrip propagation time for each of the light signals against previous calculated respective roundtrip propagation times to determine an occurrence of a change in the targeted tissue site.

Abstract: Techniques are disclosed for fabricating and using a neuromorphic computing device including biological neurons. For example, a method for fabricating a neuromorphic computing device includes forming a channel in a first substrate and forming at least one sensor in a second substrate. At least a portion of the channel in the first substrate is seeded with a biological neuron growth material. The second substrate is attached to the first substrate such that the at least one sensor is proximate to the biological neuron growth material and growth of the seeded biological neuron growth material is stimulated to grow a neuron in the at least a portion of the channel.

Abstract: A voltage controlled oscillator (VCO) circuit and method achieves linearized frequency tuning over an extended range of analog tuning voltage by implementing a magnetic balun/transformer for biasing and coupling varactor elements. An active negative transconductance circuit of cross-coupled transistors have drains connected with a resonant tank circuit and at least a first varactor element having ends connected to respective first ends of respective first coils of a respective first and second magnetic balun. Respective second ends of respective first coils of respective first and second baluns are connected to a first reference supply voltage. A second varactor element has ends connecting respective first ends of respective second coils of said first and second baluns. A sinking of a bias current through the resonant tank circuit and the transconductance circuit generates an oscillating signal. A calibration method achieves precise VCO gain over wide tuning voltage range, thereby enhancing VCO linearity.

Abstract: An electrochemical sensor array includes a thermal oxide configured to interface with one or more analytes. There is a transistor device layer that includes a plurality of field effect transistors (FETs) on top of the thermal oxide. A contact and wiring structure layer is on top of the transistor device layer and operative to couple to control nodes of each of the plurality of FETs. The contact and wiring structure are on a side opposite to that of the thermal oxide.

Abstract: A high input impedance magnetic balun/transformer having a phase balancing network (PBN) and method of operating. The balun is fully configurable and trimmable post fabrication using independently adjustable resistive and reactive parts by changing the resistance of a programmed transistor, e.g., NMOS. Parallel connected legs each having a field effect transistors (FETs) that make up NMOS device alter the impedance at the balun output terminals. The ground terminal of a secondary winding or coil at an unbalanced, single-ended side is connected to a phase balancing network. The phase balancing network includes at least two parallel legs, each leg having a resistive element in the form of a transistor device and at least one leg including a capacitive element. The transistor device at a leg can be operated in a linear region to trim the resistance and capacitances at the unbalanced side in order to achieve proper phase balancing and amplitude matching.

Abstract: A method of fabricating a glassy carbon film is described. The method includes forming a soluble layer on a substrate, forming a lift-off stack that includes a lift-off mask layer and a hard-mask layer, and forming a pattern in the lift-off stack to expose a portion of the soluble layer. The exposed portions of the soluble layer are removed to expose a portion of the substrate. A carbon material is over the exposed portion of the substrate. The soluble layer is dissolved in a solvent, and the lift-off stack is lifted-off.

Abstract: Embodiments of the present invention are directed to a semiconductor device. A non-limiting example of the semiconductor device includes a semiconductor substrate. The semiconductor device also includes a plurality of metal nanopillars formed on the substrate. The semiconductor device also includes an amperometric sensor associated with one of the plurality of nanopillars, wherein the amperometric sensor is selective to an enzyme-active neurotransmitter. The semiconductor device also includes a resistivity sensor associated with a pair of nanopillars, wherein the resistivity sensor is selective to an analyte.

Abstract: Embodiments of the invention are directed to a biosensing integrated circuit (IC). A non-limiting example of the biosensing IC includes a plurality of semiconductor substrate layers. A sensor element is formed over a first one of the plurality of semiconductor substrate layers, wherein the sensor element is configured to, based at least in part on the sensor element interacting with a predetermined material, generate data representing a measurable electrical parameter. An adhesion enhancement region is configured to physically couple the sensor element to the first one of the plurality of semiconductor substrate layers. In some embodiments of the invention, the biosensing IC further includes an electrically conductive interconnect network configured to communicatively couple the data representing the measurable electrical parameter to computer elements.

Abstract: A biosensor includes an array of electrically conductive nanorods formed on a substrate. The nanorods each includes a nanoscale porous coating formed on a surface of the nanorods from silicon dioxide layers. An enzyme coating is bound to the porous coating.

Abstract: An access system having a communication component that interfaces with a first device and a second device, where the first device is located inside or on an entity and coupled to a biological organism of the entity, and where the second device is located outside the entity and a controller component that controls a function of the first device, employing the communication component, to provide treatment to the biological organism of the entity coupled to the first device based on a request received from the second device.