Abstract: An embodiment zipper circuit achieves reduced leakage current by utilizing four voltages so that FETs in the p-logic blocks and n-logic blocks are reversed biased during a pre-charge phase. The FETs in a logic block are also reversed biased during an evaluation phase if the input voltages to the logic block are such that the logic block is not driven ON during the evaluation phase.

Abstract: A memory circuit, such as a cache or register file, where the keeper functional units are digitally controlled to compensate for variable sub-threshold leakage current.

Abstract: For a memory cell, where an access transistor couples the memory cell to a local bit line, a pMOSFET essentially eliminates sub-threshold leakage current in the access transistor when the memory cell is not being read, and when the memory cell is being read, an additional pMOSFET essentially eliminates sub-threshold leakage current in the access transistor if the memory cell stores an information bit such that it does not discharge the local bit line. In this way, a half-keeper connected to the local bit line does not need to contend with sub-threshold leakage current.

Abstract: The present invention is in the area of memory architecture. More particularly, the present invention provides a method, apparatus, machine-readable medium, and system reduce leakage current in memory. Embodiments may take advantage of the reverse bias characteristic of circuit elements, such as the reverse gate-to-source bias characteristic of a transistor, within the memory to limit leakage and provide for a leakage tolerant data storage technique. Embodiments may also enable the reverse bias characteristic of circuit elements, such as the reverse gate-to-source bias characteristic of a transistor, to be taken advantage of by sourcing charge from data storage elements.

Abstract: An embodiment of a full-swing, source-follower leakage tolerant dynamic logic gate comprises an nMOSFET logic to conditionally charge a node during an evaluation phase, and to charge the node to a relatively small voltage during the pre-charge phase so that the nMOSFET logic becomes reverse-biased.

Abstract: A cache memory cell comprising a read-access transistor to access the cell, where the read-access transistor is reverse biased when the memory cell is not being read to reduce sub-threshold leakage current.

Abstract: A cache memory cell comprising a read-access transistor to access the cell, where the read-access transistor is reverse biased when the memory cell is not being read to reduce sub-threshold leakage current.

Abstract: A dual-supply voltage latch includes a data input node to receive an input data, internal nodes to hold the input data, and an output node to output an output data. The latch also includes clock input nodes to receive a clock signal. The data input, internal, and data output nodes are at a higher potential than the clock nodes. Since clock nodes are high activity nodes, less potential on these nodes reduces the energy consumed by the latch. Although the data nodes and clock nodes are at different potentials, the latch has reduced static power dissipation.

Abstract: A single-ended, full-swing dynamic cache having memory cells grouped into memory groups, where for each memory group one or more foot transistors connect to various memory cells within the memory group. Using a foot transistor reduces sub-threshold leakage current when the memory cells connected to the foot transistor are not being read.

Abstract: An embodiment zipper circuit achieves reduced leakage current by utilizing four voltages so that FETs in the p-logic blocks and n-logic blocks are reversed biased during a pre-charge phase. The FETs in a logic block are also reversed biased during an evaluation phase if the input voltages to the logic block are such that the logic block is not driven ON during the evaluation phase.

Abstract: A memory circuit, such as a cache or register file, where the keeper functional units are digitally controlled to compensate for variable sub-threshold leakage current.

Abstract: A level converting latch, using dual-supply voltage signals and operating with reduced charge contention, converts an input signal having a first and a second potential level into an output signal also having a first and a second potential level. The first potential level of the input and output signals are the same. The second potential level of the input and output signals are unequal.

Abstract: The present invention is in the area of memory architecture. More particularly, the present invention provides a method, apparatus, machine-readable medium, and system reduce leakage current in memory. Embodiments may take advantage of the reverse bias characteristic of circuit elements, such as the reverse gate-to-source bias characteristic of a transistor, within the memory to limit leakage and provide for a leakage tolerant data storage technique. Embodiments may also enable the reverse bias characteristic of circuit elements, such as the reverse gate-to-source bias characteristic of a transistor, to be taken advantage of by sourcing charge from data storage elements.

Abstract: An embodiment of a full-swing, source-follower leakage tolerant dynamic logic gate comprises an nMOSFET logic to conditionally charge a node during an evaluation phase, and to charge the node to a relatively small voltage during the pre-charge phase so that the nMOSFET logic becomes reverse-biased.

Abstract: A voltage level converter includes a static voltage level converter and a split-level output circuit coupled to the static voltage-level converter. In another embodiment, the voltage-level converter includes a static voltage level-converter, a first transistor, and a second transistor. The static voltage-level converter includes an input node, a first pull-up node, a second pull-up node, an inverter output node, and an output node. The first transistor is coupled to the input node and the first pull-up node. The second transistor is coupled to the second pull-up node and the inverter output node.

Abstract: A double data rate dynamic logic gate in which an evaluation phase is performed for each phase of a clock signal. In one embodiment, an nMOSFET pull-down logic unit is clocked by two nMOSFETs switched in complementary fashion, and dynamic latches provide the output signals. In another embodiment, two nMOSFET pull-down logic units are employed, each clocked by an nMOSFET in complementary fashion, and a static logic unit provides the output signals.

Abstract: A domino logic circuit and method comprise at least two series-connected domino logic stages with each domino logic stage comprising a dynamic stage and a static stage. A variable virtual ground of the first domino logic's static stage is switched to a voltage level below a circuit ground level when a received clock signal and a second domino logic stage's dynamic output are both high, indicating the second domino logic circuit stage is in the evaluation phase.