Abstract: A cavity package (100) for micrometer-scale MEMS devices surrounding the cavity (210) with the MEMS device (220) with a rim (232) of solder-wettable metal, and then covering the cavity with a roof (240) of solder spanning from rim to rim. A solder body, placed over the cavity to rest on the rim, is reflowed; the surface tension of the liquid solder is reduced by the interfacial tension of the rim metal so that the liquid solder spreads over the rim surface and thereby stretches the liquid ball to a plate-like roof over the cavity. After solidifying the solder, the solder-to-metal seal renders the cavity package hermetic.

Abstract: An interference interlock between leadframe features and a mold compound is provided in a packaged semiconductor device by exposing at least one predetermined surface area to an etching process prior to a molding step. This produces an etched recess with a recessed wall delimited by a step wall, generally perpendicular and adjacent to the recessed wall. The step wall is partially undercut by etching. During the molding step, the recessed wall and the step wall are both contacted by and embedded in the molding compound.

Abstract: Various exemplary embodiments provide components, devices, and methods of semiconductor packaging. The disclosed packaging component can include a mold material disposed around a lead frame and at least an integrated circuit (IC), wherein the IC is electrically connected with one side of the lead frame. The opposite side of the lead frame including, for example, lead segments, can be exposed from the mold material. A variety of other components, devices, and packages can then be assembled, e.g., over the disclosed packaging component, through the exposed regions so as to improve packaging densities.

Abstract: According to an embodiment of the invention, a system, operable to facilitate dissipation of thermal energy, includes a mold compound, a die, a first lead frame, and a second lead frame. The die is disposed within the mold compound, and in operation generates thermal energy. The first lead frame is disposed at least partially within the mold compound and is operable to facilitate transmission of a signal. The second lead frame is disposed at least partially within the compound, at least partially separated from the first lead frame, and is operable to facilitate a dissipation of thermal energy.

Abstract: An integrated circuit package that comprises a lead frame, an integrated circuit located on the lead frame and a shunt resistor coupled to the lead frame and to the integrated circuit. The shunt resistor has a lower temperature coefficient of resistance than the lead frame, and the lead frame has a lower resistivity than the shunt resistor. The shunt resistor has a low-resistance coupling to external leads of the lead frame, or, the shunt resistor has its own integrated external leads.

Abstract: A semiconductor device comprising a leadframe (903), which has first (903a) and second (903b) surfaces, a planar pad (910) of a certain size, and a plurality of non-coplanar members (913) adjoining the pad. The device further has a heat spreader (920) with first (920a) and second (920b) surfaces, a planar pad of a size matching the leadframe pad size, and contours (922), into which the leadframe members are inserted so that the first spreader pad surface touches the second leadframe pad surface across the pad size. A semiconductor chip (904) is mounted on the first leadframe pad surface. Encapsulation material (930), preferably molding compound, covers the chip, but leaves the second spreader surface uncovered.

Abstract: A device (100) and method (200) for bonding a ribbon wire (104) to a workpiece (106) comprising feeding the ribbon wire through a passageway (116) of an ultrasonic bond capillary (102) and clamping the ribbon wire against an engagement surface (120) of the bond capillary via a clamping jaw (118) operably coupled to the bond capillary. The ribbon wire (104) is bonded to the workpiece (106) along a bonding surface (112) of the bond capillary (102) and penetrated, at least partially, between the bonding surface and the engagement surface (120) of the bond capillary by a cutting tool (124). The cutting tool (124) may comprise an elongate member (126) positioned between the bonding surface (112) and engagement surface (120), and may have a cutting blade (128) positioned at a distal end (130) thereof. The cutting tool (124) may further comprise a ring cutter (132), wherein the ribbon wire passes through a ring (134) having a cutting surface (138) defined about an inner diameter thereof.

Abstract: An integrated circuit chip packaging assembly having a first and second package side. An integrated circuit chip has a substrate side and an active circuit side. The chip includes integrated circuit devices formed on the active circuit side. The active circuit side of the chip is on the first package side. The die pad has at least one runner member extending therefrom, which may be bent toward the first package side. The active circuit side of the chip is attached to the die pad. The die pad is on the first package side relative to the chip. The package mold compound is formed over the die pad, at least part of the chip, and at least part of the runner member(s). At least part of the substrate side of the chip and/or at least part of the runner member(s) may not be covered by the package mold compound.

Abstract: A semiconductor wafer adapted to wirelessly transfer data to a testing system. The wafer comprises a plurality of dies, each die adjacent another die and each die comprising an infrared transceiver. A first infrared transceiver transfers data to a second infrared transceiver by emitting a pattern of infrared light pulses representative of the data.

Abstract: An interference interlock between leadframe features and a mold compound is provided in a packaged semiconductor device by exposing at least one predetermined surface area to an etching process prior to a molding step. This produces an etched recess with a recessed wall delimited by a step wall, generally perpendicular and adjacent to the recessed wall. The step wall is partially undercut by etching. During the molding step, the recessed wall and the step wall are both contacted by and embedded in the molding compound.

Abstract: According to an embodiment of the invention, a system, operable to facilitate dissipation of thermal energy, includes a mold compound, a die, a first lead frame, and a second lead frame. The die is disposed within the mold compound, and in operation generates thermal energy. The first lead frame is disposed at least partially within the mold compound and is operable to facilitate transmission of a signal. The second lead frame is disposed at least partially within the compound, at least partially separated from the first lead frame, and is operable to facilitate a dissipation of thermal energy.

Abstract: The semiconductor device whose structure is formed from a die attached to a leadframe comprises a die having an attachment member, and a leadframe having a recess configured to receive a corresponding attachment member so as to establish a connection between the die and the leadframe.

Abstract: An integrated circuit chip packaging assembly having a first and second package side. An integrated circuit chip has a substrate side and an active circuit side. The chip includes integrated circuit devices formed on the active circuit side. The active circuit side of the chip is on the first package side. The die pad has at least one runner member extending therefrom, which may be bent toward the first package side. The active circuit side of the chip is attached to the die pad. The die pad is on the first package side relative to the chip. The package mold compound is formed over the die pad, at least part of the chip, and at least part of the runner member(s). At least part of the substrate side of the chip and/or at least part of the runner member(s) may not be covered by the package mold compound.

Abstract: A device (100) and method (200) for bonding a ribbon wire (104) to a workpiece (106) comprising feeding the ribbon wire through a passageway (116) of an ultrasonic bond capillary (102) and clamping the ribbon wire against an engagement surface (120) of the bond capillary via a clamping jaw (118) operably coupled to the bond capillary. The ribbon wire (104) is bonded to the workpiece (106) along a bonding surface (112) of the bond capillary (102) and penetrated, at least partially, between the bonding surface and the engagement surface (120) of the bond capillary by a cutting tool (124). The cutting tool (124) may comprise an elongate member (126) positioned between the bonding surface (112) and engagement surface (120), and may have a cutting blade (128) positioned at a distal end (130) thereof. The cutting tool (124) may further comprise a ring cutter (132), wherein the ribbon wire passes through a ring (134) having a cutting surface (138) defined about an inner diameter thereof.

Abstract: A semiconductor device comprising a leadframe (903), which has first (903a) and second (903b) surfaces, a planar pad (910) of a certain size, and a plurality of non-coplanar members (913) adjoining the pad. The device further has a heat spreader (920) with first (920a) and second (920b) surfaces, a planar pad of a size matching the leadframe pad size, and contours (922), into which the leadframe members are inserted so that the first spreader pad surface touches the second leadframe pad surface across the pad size. A semiconductor chip (904) is mounted on the first leadframe pad surface. Encapsulation material (930), preferably molding compound, covers the chip, but leaves the second spreader surface uncovered.

Abstract: According to an embodiment of the invention, a package comprises a lead frame, a first passive component, a first wire bond connection, and a mold compound. The lead frame has a first pair of resilient arms. The first passive component is disposed between the first pair of resilient arms. The first wire bond connection is disposed between the die and a portion of the lead frame adjacent the first passive component. The first wire bond connection is operable for communication between the die and the first passive component. The mold compound is disposed at least partially around the lead frame, the first passive component, the first wire bond connection, and the die.

Abstract: A method (300) and apparatus (200) for fabricating a semiconductor package (100), wherein a heat spreader (118) is placed in a mold cavity (204) of a mold (202), and a leadframe (108) is placed over the heat spreader (118). A magnetic field (218) is applied to the mold cavity (204), wherein one or more of the heat spreader (118) and leadframe (108) are generally attracted to a surface (212) of the mold cavity (204), thus generally determining a position (214) of the heat spreader (118) within the mold cavity (204) and defining a contact region (120) between the heat spreader (118) and the mold (202). An encapsulation material (114) is further injected into the mold cavity (204), wherein the encapsulation material (114) is generally prevented from entering the contact region (120) due, at least in part, to the applied magnetic field (218). The encapsulation material (114) is then cured, and the semiconductor package (100) is removed from the mold cavity (204).

Abstract: According to an embodiment of the invention, a component package comprises a plurality of components and mold compound. The plurality of components are disposed on a zero plane of a removable substrate. The removal substrate is operable to hold the plurality of components in position. At least one of the plurality of components is wire bonded to at least another of the plurality of components with a wire bond. The mold compound is disposed around the plurality of components, encapsulating the plurality of components. A portion of the plurality of the components disposed upon the zero plane of the removable substrate are exposed upon removal of the substrate from the component package.

Abstract: According to an embodiment of the invention, a system, operable to facilitate dissipation of thermal energy, includes a mold compound, a die, a first lead frame, and a second lead frame. The die is disposed within the mold compound, and in operation generates thermal energy. The first lead frame is disposed at least partially within the mold compound and is operable to facilitate transmission of a signal. The second lead frame is disposed at least partially within the compound, at least partially separated from the first lead frame, and is operable to facilitate a dissipation of thermal energy.

Abstract: A semiconductor stacked die package adapted to wirelessly transfer data between stacked dies. The package comprises a plurality of dies, each die adjacent another die and each die comprising an infrared transceiver. A first infrared transceiver transfers data to a second infrared transceiver by emitting a pattern of infrared light pulses representative of the data.