Patents by Inventor Steven M. Bilodeau
Steven M. Bilodeau has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240096635Abstract: Compositions useful for the selective removal by etching of silicon-germanium-containing materials relative to silicon-containing materials, from a microelectronic device having features containing these materials at a surface, the compositions containing hydrofluoric acid, acetic acid, hydrogen peroxide, and at least one additional acid that will improve performance as measured by one or more of an etching rate or selectivity and are tunable to achieve the required Si:Ge removal selectivity and etch rates.Type: ApplicationFiled: November 30, 2023Publication date: March 21, 2024Inventor: Steven M. Bilodeau
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Patent number: 11875997Abstract: Compositions useful for the selective removal by etching of silicon-germanium-containing materials relative to silicon-containing materials, from a microelectronic device having features containing these materials at a surface, the compositions containing hydrofluoric acid, acetic acid, hydrogen peroxide, and at least one additional acid that will improve performance as measured by one or more of an etching rate or selectivity and are tunable to achieve the required Si:Ge removal selectivity and etch rates.Type: GrantFiled: April 11, 2018Date of Patent: January 16, 2024Assignee: ENTEGRIS, INC.Inventor: Steven M. Bilodeau
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Publication number: 20230407176Abstract: The invention provides compositions useful in the etching of polysilicon in the presence of silicon oxide and silicon nitride. The compositions comprise choline hydroxide, an oxidizing agent such as periodic acid, and optionally a surfactant, and are useful in the etching of polysilicon in general, and in particular in both the operation of polysilicon trim as well as polysilicon exhume. The utilization of an added oxidizing agent was found to reduce selectivity of silicon etching based on the silicon crystal orientation, which was found to reduce roughness and the presence of residual silicon residues, such as silicon (111) residues after the etching step.Type: ApplicationFiled: June 16, 2023Publication date: December 21, 2023Inventors: Steven M. Bilodeau, Daniela White
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Publication number: 20230365863Abstract: Provided are compositions and methods for the wet etching of a surface of a microelectronic device substrate which contains surfaces comprising silicon nitride, silicon oxide, and polysilicon. The method of the invention involves a passivation step and a silicon nitride etching step, as more fully described below. The combination of the two steps was found to greatly improve the selectivity of the silicon nitride etching operation in the presence of polysilicon.Type: ApplicationFiled: May 8, 2023Publication date: November 16, 2023Inventors: Steven M. Bilodeau, Claudia Yevenes
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Patent number: 11781066Abstract: The invention provides a composition and method for improving the selectivity of nitride etching versus oxide etching and can be used with conventional phosphoric acid wet etch compositions. The invention describes additives that serve to inhibit silicon, oxides, and related compounds regrowth (i.e., redeposition) on the silicon oxide surface. In certain embodiments, the invention provides certain amino-substituted aryl compounds which are bound to a tri-alkoxy silane.Type: GrantFiled: May 18, 2022Date of Patent: October 10, 2023Assignee: ENTEGRIS, INC.Inventors: YoungMin Kim, Michael White, Daniela White, Emanuel Cooper, Steven M. Bilodeau
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Patent number: 11530356Abstract: Provided are wet etching compositions and methods for etching a surface of a microelectronic device that contains silicon nitride (SiN), silicon oxide, and polysilicon which in one embodiment is in contact with a surface comprising a compound which is electrochemically more noble than silicon, and optionally other materials which may include a conductive material, a semiconducting material, or an insulating material useful in a microelectronic device, or a processing material that is useful in preparing a microelectronic device.Type: GrantFiled: July 29, 2021Date of Patent: December 20, 2022Assignee: ENTEGRIS, INC.Inventors: Steven M. Bilodeau, Emanuel I. Cooper, Daniela White
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Publication number: 20220389314Abstract: The invention relates to compositions and methods for the selective wet etching of a surface of a microelectronic device that contains both silicon nitride (SiN) and polysilicon. An etching composition as described comprises phosphoric acid, certain polysilicon corrosion inhibitors, along with certain silanes. The combination of the two components was found to greatly improve the selectivity of the silicon nitride etching composition in the presence of polysilicon.Type: ApplicationFiled: May 20, 2022Publication date: December 8, 2022Inventors: Steven M. Bilodeau, Claudia Yevenes, Juhee Yeo
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Publication number: 20220275276Abstract: The invention provides a composition and method for improving the selectivity of nitride etching versus oxide etching and can be used with conventional phosphoric acid wet etch compositions. The invention describes additives that serve to inhibit silicon, oxides, and related compounds regrowth (i.e., redeposition) on the silicon oxide surface. In certain embodiments, the invention provides certain amino-substituted aryl compounds which are bound to a tri-alkoxy silane.Type: ApplicationFiled: May 18, 2022Publication date: September 1, 2022Inventors: YoungMin Kim, Michael White, Daniela White, Emanuel I. Cooper, Steven M. Bilodeau
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Patent number: 11365351Abstract: The invention provides a composition and method for improving the selectivity of nitride etching versus oxide etching and can be used with conventional phosphoric acid wet etch compositions. The invention describes additives that serve to inhibit silicon, oxides, and related compounds regrowth (i.e., redeposition) on the silicon oxide surface. In certain embodiments, the invention provides certain amino-substituted aryl compounds which are bound to a tri-alkoxy silane.Type: GrantFiled: October 8, 2020Date of Patent: June 21, 2022Assignee: ENTEGRIS, INC.Inventors: YoungMin Kim, Michael White, Daniela White, Emanuel I. Cooper, Steven M. Bilodeau
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Publication number: 20220033710Abstract: Provided are wet etching compositions and methods for etching a surface of a microelectronic device that contains silicon nitride (SiN), silicon oxide, and polysilicon which in one embodiment is in contact with a surface comprising a compound which is electrochemically more noble than silicon, and optionally other materials which may include a conductive material, a semiconducting material, or an insulating material useful in a microelectronic device, or a processing material that is useful in preparing a microelectronic device.Type: ApplicationFiled: July 29, 2021Publication date: February 3, 2022Inventors: Steven M. BILODEAU, Emanuel I. COOPER, Daniela WHITE
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Patent number: 11053440Abstract: Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon are provided. The compositions of the invention are particularly useful in the etching of 3D NAND structures.Type: GrantFiled: November 12, 2019Date of Patent: July 6, 2021Assignee: ENTEGRIS, INC.Inventors: Steven M. Bilodeau, SeongJin Hong, Hsing-Chen Wu, Min-Chieh Yang, Emanuel I. Cooper
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Publication number: 20210108140Abstract: The invention provides a composition and method for improving the selectivity of nitride etching versus oxide etching and can be used with conventional phosphoric acid wet etch compositions. The invention describes additives that serve to inhibit silicon, oxides, and related compounds regrowth (i.e., redeposition) on the silicon oxide surface. In certain embodiments, the invention provides certain amino-substituted aryl compounds which are bound to a tri-alkoxy silane.Type: ApplicationFiled: October 8, 2020Publication date: April 15, 2021Inventors: YoungMin KIM, Michael WHITE, Daniela WHITE, Emanuel I. COOPER, Steven M. BILODEAU
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Publication number: 20200157423Abstract: Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon are provided. The compositions of the invention are particularly useful in the etching of 3D NAND structures.Type: ApplicationFiled: November 12, 2019Publication date: May 21, 2020Inventors: Steven M. BILODEAU, SeongJin HONG, Hsing-Chen WU, Min-Chieh YANG, Emanuel I. COOPER
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Publication number: 20180294165Abstract: Compositions useful for the selective removal by etching of silicon-germanium-containing materials relative to silicon-containing materials, from a microelectronic device having features containing these materials at a surface, the compositions containing hydrofluoric acid, acetic acid, hydrogen peroxide, and at least one additional acid that will improve performance as measured by one or more of an etching rate or selectivity and are tunable to achieve the required Si:Ge removal selectivity and etch rates.Type: ApplicationFiled: April 11, 2018Publication date: October 11, 2018Inventor: Steven M. Bilodeau
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Patent number: 10043658Abstract: A full fill trench structure is described, including a microelectronic device substrate having a high aspect ratio trench therein and filled with silicon dioxide of a substantially void-free character and substantially uniform density throughout its bulk mass. A method of manufacturing a semiconductor product also is described, involving use of specific silicon precursor compositions for forming substantially void-free and substantially uniform density silicon dioxide material in the trench. The precursor fill composition may include silicon and germanium, to produce a microelectronic device structure including a GeO2/SiO2 trench fill material. A suppressor component may be employed in the precursor fill composition, to eliminate or minimize seam formation in the cured trench fill material.Type: GrantFiled: January 4, 2018Date of Patent: August 7, 2018Assignee: Entegris, Inc.Inventors: William Hunks, Chongying Xu, Bryan C. Hendrix, Jeffrey F. Roeder, Steven M. Bilodeau, Weimin Li
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Publication number: 20180130654Abstract: A full fill trench structure is described, including a microelectronic device substrate having a high aspect ratio trench therein and filled with silicon dioxide of a substantially void-free character and substantially uniform density throughout its bulk mass. A method of manufacturing a semiconductor product also is described, involving use of specific silicon precursor compositions for forming substantially void-free and substantially uniform density silicon dioxide material in the trench. The precursor fill composition may include silicon and germanium, to produce a microelectronic device structure including a GeO2/SiO2 trench fill material. A suppressor component may be employed in the precursor fill composition, to eliminate or minimize seam formation in the cured trench fill material.Type: ApplicationFiled: January 4, 2018Publication date: May 10, 2018Inventors: William Hunks, Chongying Xu, Bryan C. Hendrix, Jeffrey F. Roeder, Steven M. Bilodeau, Weimin Li
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Publication number: 20160225615Abstract: A full fill trench structure is described, including a microelectronic device substrate having a high aspect ratio trench therein and filled with silicon dioxide of a substantially void-free character and substantially uniform density throughout its bulk mass. A method of manufacturing a semiconductor product also is described, involving use of specific silicon precursor compositions for forming substantially void-free and substantially uniform density silicon dioxide material in the trench. The precursor fill composition may include silicon and germanium, to produce a microelectronic device structure including a GeO2/SiO2 trench fill material. A suppressor component may be employed in the precursor fill composition, to eliminate or minimize seam formation in the cured trench fill material.Type: ApplicationFiled: April 8, 2016Publication date: August 4, 2016Applicant: Entegris, Inc.Inventors: William Hunks, Chongying Xu, Bryan C. Hendrix, Jeffrey F. Roeder, Steven M. Bilodeau, Weimin Li
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Patent number: 9337054Abstract: A full fill trench structure is described, including a microelectronic device substrate having a high aspect ratio trench therein and filled with silicon dioxide of a substantially void-free character and substantially uniform density throughout its bulk mass. A method of manufacturing a semiconductor product also is described, involving use of specific silicon precursor compositions for forming substantially void-free and substantially uniform density silicon dioxide material in the trench. The precursor fill composition may include silicon and germanium, to produce a microelectronic device structure including a GeO2/SiO2 trench fill material. A suppressor component may be employed in the precursor fill composition, to eliminate or minimize seam formation in the cured trench fill material.Type: GrantFiled: June 27, 2008Date of Patent: May 10, 2016Assignee: ENTEGRIS, INC.Inventors: William Hunks, Chongying Xu, Bryan C. Hendrix, Jeffrey F. Roeder, Steven M. Bilodeau, Weimin Li
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Patent number: 9132412Abstract: An adsorption structure is described that includes at least one adsorbent member formed of an adsorbent material and at least one porous member provided in contact with a portion of the adsorbent member to allow gas to enter and exit the portion of the adsorbent member. Such adsorption structure is usefully employed in adsorbent-based refrigeration systems. A method also is described for producing an adsorbent material, in which a first polymeric material provided having a first density and a second polymeric material is provided having a second density, in which the second polymeric material is in contact with the first polymeric material to form a structure. The structure is pyrolyzed to form a porous adsorbent material including a first region corresponding to the first polymeric material and a second region corresponding to the second polymeric material, in which at least one of the pore sizes and the pore distribution differs between the first region and the second region.Type: GrantFiled: September 24, 2013Date of Patent: September 15, 2015Assignee: ENTEGRIS, INC.Inventors: J. Donald Carruthers, Karl Boggs, Luping Wang, Shaun M. Wilson, Jose I. Arno, Paul J. Marganski, Steven M. Bilodeau, Peng Zou, Brian Bobita, Joseph D. Sweeney, Douglas Edwards
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Publication number: 20150162213Abstract: Compositions and methods for substantially and efficiently removing NiPt (1-25%) material from microelectronic devices having same thereon. The compositions are substantially compatible with other materials present on the microelectronic device such as gate metal materials.Type: ApplicationFiled: May 10, 2013Publication date: June 11, 2015Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: Tianniu Chen, Steven M. Bilodeau, Emanuel I. Cooper, Li-Min Chen, Jeffrey A. Barnes, Mark Biscotto, Karl E. Boggs, Rekha Rajaram