Abstract: A method of improving the physical and/or electrical and/or magnetic properties of a thin film material formed on a substrate, wherein the properties of the thin film material are stress-dependent, by selectively applying force to the substrate during the film formation and/or thereafter during the cooling of the film in the case of a film formed at elevated temperature, to impose through the substrate an applied force condition opposing or enhancing the retention of stress in the product film. The method of the invention has particular utility in the formation of ferroelectric thin films which are grown at temperature above the Curie temperature, and which may be placed in tension during the cooling of the film to provide ferroelectric domains with polarization in the plane of the film.

Abstract: A ferroelectric capacitor device structure, including a ferroelectric stack capacitor comprising a ferroelectric material capacitor element on a substrate containing buried transistor circuitry beneath an insulator layer having a via therein containing a conductive plug to the transistor circuitry, wherein E-fields are structurally confined to the ferroelectric capacitor material element.

Abstract: An integrated circuit structures formed by chemical mechanical polishing (CMP) process, which comprises a conductive pathway recessed in a dielectric substrate, wherein the conductive pathway comprises conductive transmission lines encapsulated in a transmission-enhancement material, and wherein the conductive pathway is filled sequentially by a first layer of the transmission-enhancement material followed by the conductive transmission line; a second layer of transmission-enhancement material encapsulating the conductive transmission line and contacting the first layer of the transmission-enhancement material, wherein the transmission-enhancement material is selected from the group consisting of high magnetic permeability material and high permittivity material. Such integrated circuit structure may comprise a device structure selected from the group consisting of capacitors, inductors, and resistors.

Abstract: A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-field scalable in character, and is useful for ferroelectric capacitors over a wide range of thicknesses, e.g., from about 20 nanometers to about 150 nanometers, and a range of lateral dimensions extending to as low as 0.15 &mgr;m. Corresponding capacitor areas (i.e., lateral scaling) in a preferred embodiment are in the range of from about 104 to about 10−2 &mgr;m2. The scalable PZT material of the invention may be formed by liquid delivery MOCVD, without PZT film modification techniques such as acceptor doping or use of film modifiers (e.g., Nb, Ta, La, Sr, Ca and the like).

Abstract: A ferroelectric capacitor device structure, including a ferroelectric stack capacitor comprising a ferroelectric material capacitor element on a substrate containing buried transistor circuitry beneath an insulator layer having a via therein containing a conductive plug to the transistor circuitry, wherein E-fields are structurally confined to the ferroelectric capacitor material element.

Abstract: A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-field scalable in character, and is useful for ferroelectric capacitors over a wide range of thicknesses, e.g., from about 20 nanometers to about 150 nanometers, and a range of lateral dimensions extending to as low as 0.15 &mgr;m. Corresponding capacitor areas (i.e., lateral scaling) in a preferred embodiment are in the range of from about 104 to about 10−2 &mgr;m2. The scalable PZT material of the invention may be formed by liquid delivery MOCVD, without PZT film modification techniques such as acceptor doping or use of film modifiers (e.g., Nb, Ta, La, Sr, Ca and the like).

Abstract: A ferroelectric capacitor device structure, including a ferroelectric stack capacitor comprising a ferroelectric material capacitor element on a substrate containing buried transistor circuitry beneath an insulator layer having a via therein containing a conductive plug to the transistor circuitry, wherein E-fields are structurally confined to the ferroelectric capacitor material element.

Abstract: A method of improving the physical and/or electrical and/or magnetic properties of a thin film material formed on a substrate, wherein the properties of the thin film material are stress-dependent, by selectively applying force to the substrate during the film formation and/or thereafter during the cooling of the film in the case of a film formed at elevated temperature, to impose through the substrate an applied force condition opposing or enhancing the retention of stress in the product film. The method of the invention has particular utility in the formation of ferroelectric thin films which are grown at temperature above the Curie temperature, and which may be placed in tension during the cooling of the film to provide ferroelectric domains with polarization in the plane of the film.

Abstract: A chemical vapor deposition (CVD) method for forming a multi-component oxide layer. There is first provided a chemical vapor deposition (CVD) reactor chamber. There is then positioned within the chemical vapor deposition (CVD) reactor chamber a substrate. There is then formed over the substrate a multi-component oxide precursor layer. The multi-component oxide precursor layer is formed from at minimum a first precursor reactant source material and a second precursor reactant source material introduced simultaneously into the chemical vapor deposition (CVD) reactor chamber in absence of an oxidant reactant source material. There is then oxidized with the oxidant reactant source material within the chemical vapor deposition (CVD) reactor chamber the multi-component oxide precursor layer formed over the substrate to form a multi-component oxide layer formed over the substrate.

Abstract: A liquid delivery system for delivery of an initially liquid reagent in vaporized form to a chemical vapor deposition reactor arranged in vapor-receiving relationship to the liquid delivery system.