Patents by Inventor Steven M. Bilodeau
Steven M. Bilodeau has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20140134823Abstract: High-k materials and devices, e.g., DRAM capacitors, and methods of making and using the same. Various methods of forming perovskite films are described, including methods in which perovskite material is deposited on the substrate by a pulsed vapor deposition process involving contacting of the substrate with perovskite material-forming metal precursors. In one such method, the process is carried out with doping or alloying of the perovskite material with a higher mobility and/or higher volatility metal species than the metal species in the perovskite material-forming metal precursors. In another method, the perovskite material is exposed to elevated temperature for sufficient time to crystallize or to enhance crystallization of the perovskite material, followed by growth of the perovskite material under pulsed vapor deposition conditions. Various perovskite compositions are described, including: (Sr, Pb)TiO3; SrRuO3 or SrTiO3, doped with Zn, Cd or Hg; Sr(Sn,Ru)O3; and Sr(Sn,Ti)O3.Type: ApplicationFiled: June 19, 2012Publication date: May 15, 2014Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: Bryan C. Hendrix, Steven M. Bilodeau, Ing-Shin Barry Chen, Jeffrey F. Roeder, Gregory T. Stauf
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Publication number: 20140020419Abstract: An adsorption structure is described that includes at least one adsorbent member formed of an adsorbent material and at least one porous member provided in contact with a portion of the adsorbent member to allow gas to enter and exit the portion of the adsorbent member. Such adsorption structure is usefully employed in adsorbent-based refrigeration systems. A method also is described for producing an adsorbent material, in which a first polymeric material provided having a first density and a second polymeric material is provided having a second density, in which the second polymeric material is in contact with the first polymeric material to form a structure. The structure is pyrolyzed to form a porous adsorbent material including a first region corresponding to the first polymeric material and a second region corresponding to the second polymeric material, in which at least one of the pore sizes and the pore distribution differs between the first region and the second region.Type: ApplicationFiled: September 24, 2013Publication date: January 23, 2014Applicant: Advanced Technology Materials, Inc.Inventors: J. Donald Carruthers, Karl Boggs, Luping Wang, Shaun M. Wilson, Jose I. Arno, Paul J. Marganski, Steven M. Bilodeau, Peng Zou, Brian Bobita, Joseph D. Sweeney
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Publication number: 20130324390Abstract: A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-field scalable in character, and is useful for ferroelectric capacitors over a wide range of thicknesses, e.g., from about 20 nanometers to about 150 nanometers, and a range of lateral dimensions extending to as low as 0.15 ?m. Corresponding capacitor areas (i.e., lateral scaling) in a preferred embodiment are in the range of from about 104 to about 10?2 ?m2. The scalable PZT material of the invention may be formed by liquid delivery MOCVD, without PZT film modification techniques such as acceptor doping or use of film modifiers (e.g., Nb, Ta, La, Sr, Ca and the like).Type: ApplicationFiled: August 6, 2013Publication date: December 5, 2013Applicant: Advanced Technology Materials, Inc.Inventors: Peter C. Van Buskirk, Jeffrey F. Roeder, Steven M. Bilodeau, Michael W. Russell, Stephen T. Johnston, Daniel J. Vestyck, Thomas H. Baum
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Patent number: 8539781Abstract: An adsorption structure is described that includes at least one adsorbent member formed of an adsorbent material and at least one porous member provided in contact with a portion of the adsorbent member to allow gas to enter and exit the portion of the adsorbent member. Such adsorption structure is usefully employed in adsorbent-based refrigeration systems. A method also is described for producing an adsorbent material, in which a first polymeric material is provided having a first density and a second polymeric material is provided having a second density, in which the second polymeric material is in contact with the first polymeric material to form a structure. The structure is pyrolyzed to form a porous adsorbent material including a first region corresponding to the first polymeric material and a second region corresponding to the second polymeric material, in which at least one of the pore sizes and the pore distribution differs between the first region and the second region.Type: GrantFiled: June 22, 2008Date of Patent: September 24, 2013Assignee: Advanced Technology Materials, Inc.Inventors: J. Donald Carruthers, Karl Boggs, Luping Wang, Shaun Wilson, Jose I. Arno, Paul J. Marganski, Steven M. Bilodeau, Peng Zou, Brian Bobita, Joseph D. Sweeney, Douglas Edwards
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Patent number: 8241704Abstract: A multi-step method for depositing ruthenium thin films having high conductivity and superior adherence to the substrate is described. The method includes the deposition of a ruthenium nucleation layer followed by the deposition of a highly conductive ruthenium upper layer. Both layers are deposited using chemical vapor deposition (CVD) employing low deposition rates.Type: GrantFiled: April 19, 2011Date of Patent: August 14, 2012Assignee: Advanced Technology Materials, Inc.Inventors: Bryan C. Hendrix, James J. Welch, Steven M. Bilodeau, Jeffrey F. Roeder, Chongying Xu, Thomas H. Baum
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Publication number: 20120127629Abstract: A composite dielectric material including an early transition metal or metal oxide base material and a dopant, co-deposited, alloying or layering secondary material, selected from among Nb, Ge, Ta, La, Y, Ce, Pr, Nd, Gd, Dy, Sr, Ba, Ca, and Mg, and oxides of such metals, and alumina as a dopant or alloying secondary material. Such composite dielectric material can be formed by vapor deposition processes, e.g., ALD, using suitable precursors, to form microelectronic devices such as ferroelectric high k capacitors, gate structures, DRAMs, and the like.Type: ApplicationFiled: April 14, 2010Publication date: May 24, 2012Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: Jeffrey F. Roeder, Bryan C. Hendrix, Steven M. Bilodeau, Gregory T. Stauf, Tianniu Chen, Thomas M. Cameron, Chongying Xu
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Patent number: 8053375Abstract: An ultra low k dielectric film, including a silicon film containing porosity deriving from a porogen, as formed from a precursor silane and a porogen, wherein the precursor silane has a water content below 10 ppm, based on total weight of the precursor silane, and/or the porogen has a water content below 10 ppm, based on total weight of the porogen. In one implementation, the precursor silane is diethoxymethylsilane, and the porogen is bicyclo[2.2.1]-hepta-2,5-diene having a trace water content below 10 ppm, based on total weight of said bicyclo[2.2.1]-hepta-2,5-diene. These super-dry reagents are unexpectedly polymerization-resistant during their delivery and deposition in the formation of ultra low k films, and are advantageously employed to produce ultra low k films of superior character.Type: GrantFiled: October 27, 2007Date of Patent: November 8, 2011Assignee: Advanced Technology Materials, Inc.Inventors: Chongying Xu, Jeffrey F. Roeder, Thomas H. Baum, Steven M. Bilodeau, Scott Battle, William Hunks, Tianniu Chen
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Patent number: 8034407Abstract: A multi-step method for depositing ruthenium thin films having high conductivity and superior adherence to the substrate is described. The method includes the deposition of a ruthenium nucleation layer followed by the deposition of a highly conductive ruthenium upper layer. Both layers are deposited using chemical vapor deposition (CVD) employing low deposition rates.Type: GrantFiled: May 17, 2007Date of Patent: October 11, 2011Assignee: Advanced Technology Materials, Inc.Inventors: Bryan C. Hendrix, James J. Welch, Steven M. Bilodeau, Jeffrey F. Roeder, Chongying Xu, Thomas H. Baum
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Publication number: 20110195188Abstract: A multi-step method for depositing ruthenium thin films having high conductivity and superior adherence to the substrate is described. The method includes the deposition of a ruthenium nucleation layer followed by the deposition of a highly conductive ruthenium upper layer. Both layers are deposited using chemical vapor deposition (CVD) employing low deposition rates.Type: ApplicationFiled: April 19, 2011Publication date: August 11, 2011Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: Bryan C. Hendrix, James J. Welch, Steven M. Bilodeau, Jeffrey F. Roeder, Chongying Xu, Thomas H. Baum
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Publication number: 20110097478Abstract: A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-field scalable in character, and is useful for ferroelectric capacitors over a wide range of thicknesses, e.g., from about 20 nanometers to about 150 nanometers, and a range of lateral dimensions extending to as low as 0.15 ?m. Corresponding capacitor areas (i.e., lateral scaling) in a preferred embodiment are in the range of from about 104 to about 10?2 ?m2. The scalable PZT material of the invention may be formed by liquid delivery MOCVD, without PZT film modification techniques such as acceptor doping or use of film modifiers (e.g., Nb, Ta, La, Sr, Ca and the like).Type: ApplicationFiled: December 23, 2010Publication date: April 28, 2011Applicant: Advanced Technology Materials, Inc.Inventors: Peter C. Van Buskirk, Jeffrey F. Roeder, Steven M. Bilodeau, Michael W. Russell, Stephen T. Johnston, Daniel J. Vestyck, Thomas H. Baum
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Publication number: 20110048063Abstract: An adsorption structure is described that includes at least one adsorbent member formed of an adsorbent material and at least one porous member provided in contact with a portion of the adsorbent member to allow gas to enter and exit the portion of the adsorbent member. Such adsorption structure is usefully employed in adsorbent-based refrigeration systems. A method also is described for producing an adsorbent material, in which a first polymeric material is provided having a first density and a second polymeric material is provided having a second density, in which the second polymeric material is in contact with the first polymeric material to form a structure. The structure is pyrolyzed to form a porous adsorbent material including a first region corresponding to the first polymeric material and a second region corresponding to the second polymeric material, in which at least one of the pore sizes and the pore distribution differs between the first region and the second region.Type: ApplicationFiled: June 22, 2008Publication date: March 3, 2011Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: J. Donald Carruthers, Karl Boggs, Luping Wang, Shaun Wilson, Jose I. Arno, Paul J. Marganski, Steven M. Bilodeau, Peng Zou, Brian Bobita, Joseph D. Sweeney, Douglas Edwards
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Patent number: 7862857Abstract: A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-field scalable in character, and is useful for ferroelectric capacitors over a wide range of thicknesses, e.g., from about 20 nanometers to about 150 nanometers, and a range of lateral dimensions extending to as low as 0.15 ?m. Corresponding capacitor areas (i.e., lateral scaling) in a preferred embodiment are in the range of from about 104 to about 10?2 ?m2. The scalable PZT material of the invention may be formed by liquid delivery MOCVD, without PZT film modification techniques such as acceptor doping or use of film modifiers (e.g., Nb, Ta, La, Sr, Ca and the like).Type: GrantFiled: April 27, 2010Date of Patent: January 4, 2011Assignee: Advanced Technology Materials, Inc.Inventors: Peter C. Van Buskirk, Jeffrey F. Roeder, Steven M. Bilodeau, Michael W. Russell, Stephen T. Johnston, Daniel J. Vestyck, Thomas H. Baum
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Publication number: 20100209596Abstract: A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-field scalable in character, and is useful for ferroelectric capacitors over a wide range of thicknesses, e.g., from about 20 nanometers to about 150 nanometers, and a range of lateral dimensions extending to as low as 0.15 ?m. Corresponding capacitor areas (i.e., lateral scaling) in a preferred embodiment are in the range of from about 104 to about 10?2 ?m2. The scalable PZT material of the invention may be formed by liquid delivery MOCVD, without PZT film modification techniques such as acceptor doping or use of film modifiers (e.g., Nb, Ta, La, Sr, Ca and the like).Type: ApplicationFiled: April 27, 2010Publication date: August 19, 2010Applicant: Advanced Technology Materials, Inc.Inventors: Peter C. Van Buskirk, Jeffrey F. Roeder, Steven M. Bilodeau, Michael W. Russell, Stephen T. Johnston, Daneil J. Vestyck, Thomas H. Baum
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Publication number: 20100164057Abstract: A full fill trench structure comprising a microelectronic device substrate having a high aspect ratio trench therein and a full filled mass of silicon dioxide in the trench, wherein the silicon dioxide is of a substantially void-free character and has a substantially uniform density throughout its bulk mass. A corresponding method of manufacturing a semiconductor product is described, involving use of specific silicon precursor compositions for use in full filling a trench of a microelectronic device substrate, in which the silicon dioxide precursor composition is processed to conduct hydrolysis and condensation reactions for forming the substantially void-free and substantially uniform density silicon dioxide material in the trench. The fill process may be carried out with a precursor fill composition including silicon and germanium, to produce a microelectronic device structure including a GeO2/SiO2 trench fill material. A suppressor component, e.g.Type: ApplicationFiled: June 27, 2008Publication date: July 1, 2010Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: William Hunks, Chongying Xu, Bryan C. Hendrix, Jeffrey F. Roeder, Steven M. Bilodeau, Weimin Li
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Patent number: 7705382Abstract: A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-field scalable in character, and is useful for ferroelectric capacitors over a wide range of thicknesses, e.g., from about 20 nanometers to about 150 nanometers, and a range of lateral dimensions extending to as low as 0.15 ?m. Corresponding capacitor areas (i.e., lateral scaling) in a preferred embodiment are in the range of from about 104 to about 10?2 ?m2. The scalable PZT material of the invention may be formed by liquid delivery MOCVD, without PZT film modification techniques such as acceptor doping or use of film modifiers (e.g., Nb, Ta, La, Sr, Ca and the like).Type: GrantFiled: October 26, 2007Date of Patent: April 27, 2010Assignee: Advanced Technology Materials, Inc.Inventors: Peter C. Van Buskirk, Jeffrey F. Roeder, Steven M. Bilodeau, Michael W. Russell, Stephen T. Johnston, Daniel J. Vestyck, Thomas H. Baum
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Publication number: 20080251104Abstract: Apparatus and method for determination of the endpoint of a cleaning process in which cleaning fluid is contacted with a structure to effect cleaning thereof. The cleaning process includes contacting a cleaning fluid with a structure to be cleaned and producing a cleaning effluent having a sensible heat thermal energy characteristic corresponding to extent of cleaning of the structure, disposing an object in the cleaning effluent that interacts with the cleaning effluent to produce a response indicative of the sensible heat thermal energy characteristic of the cleaning effluent, and monitoring such response to determine when the cleaning is completed. An endpointing algorithm and endpoint monitoring are also described, as well as endpoint monitor sensor elements that are useful to determine endpoint conditions in an efficient and reproduceable manner.Type: ApplicationFiled: October 3, 2006Publication date: October 16, 2008Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: Ing-Shin Chen, Jeffrey W. Neuner, Jeffrey F. Roeder, Steven M. Bilodeau, Bryan C. Hendrix, Philip S.H. Chen
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Patent number: 7344589Abstract: A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-field scalable in character, and is useful for ferroelectric capacitors over a wide range of thicknesses, e.g., from about 20 nanometers to about 150 nanometers, and a range of lateral dimensions extending to as low as 0.15 ?m. Corresponding capacitor areas (i.e., lateral scaling) in a preferred embodiment are in the range of from about 104 to about 10?2 ?m2. The scalable PZT material of the invention may be formed by liquid delivery MOCVD, without PZT film modification techniques such as acceptor doping or use of film modifiers (e.g., Nb, Ta, La, Sr, Ca and the like).Type: GrantFiled: January 10, 2006Date of Patent: March 18, 2008Assignee: Advanced Technology Materials, Inc.Inventors: Peter C. Van Buskirk, Jeffrey F. Roeder, Steven M. Bilodeau, Michael W. Russell, Stephen T. Johnston, Daniel J. Vestyck, Thomas H. Baum
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Patent number: 7285308Abstract: A multi-step method for depositing ruthenium thin films having high conductivity and superior adherence to the substrate is described. The method includes the deposition of a ruthenium nucleation layer followed by the deposition of a highly conductive ruthenium upper layer. Both layers are deposited using chemical vapor deposition (CVD) employing low deposition rates.Type: GrantFiled: March 18, 2004Date of Patent: October 23, 2007Assignee: Advanced Technology Materials, Inc.Inventors: Bryan C. Hendrix, James J. Welch, Steven M. Bilodeau, Jeffrey F. Roeder, Chongying Xu, Thomas H. Baum
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Patent number: 7012292Abstract: A method of preventing oxygen deficiency in a ferroelectric or high ? film material having a top electrode layer deposited thereon. Process conditions are employed that either enable the top electrode layer to be formed without oxygen abstraction from the ferroelectric or high ? film material in the vicinity and at the top surface thereof, or else provide the ferroelectric or high ? film material in the vicinity and at the top surface thereof with a surplus of oxygen. In the latter case, the deposition formation of the top electrode layer on the ferroelectric or high ? film material depletes the over-stoichiometric excess of the oxygen in the film material, to yield a device structure including an electrode on a film material having a proper stoichiometry, e.g., of PbZrTiO3.Type: GrantFiled: November 25, 1998Date of Patent: March 14, 2006Assignee: Advanced Technology Materials, IncInventors: Peter C. Van Buskirk, Steven M. Bilodeau, Stephen T. Johnston, Daniel J. Vestyck, Michael W. Russell
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Patent number: 6984417Abstract: A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-field scalable in character, and is useful for ferroelectric capacitors over a wide range of thicknesses, e.g., from about 20 nanometers to about 150 nanometers, and a range of lateral dimensions extending to as low as 0.15 ?m. Corresponding capacitor areas (i.e., lateral scaling) in a preferred embodiment are in the range of from about 104 to about 10?2 ?m2. The scalable PZT material of the invention may be formed by liquid delivery MOCVD, without PZT film modification techniques such as acceptor doping or use of film modifiers (e.g., Nb, Ta, La, Sr, Ca and the like).Type: GrantFiled: August 13, 2001Date of Patent: January 10, 2006Assignee: Advanced Technology Materials, Inc.Inventors: Peter C. Van Buskirk, Jeffrey F. Roeder, Steven M. Bilodeau, Michael W. Russell, Stephen T. Johnston, Daniel J. Vestyck, Thomas H. Baum