Abstract: Exemplary embodiments provide optical systems and methods for producing interferometric lithography (IL) patterns with circular symmetry for applications such as memory devices including CD ROMs, DVDs, magnetic hard disk storage, and the like. Specifically, one or more axicon optics can be configured in the optical systems for IL patterning processes to form a uniform set of rings with constant increment in all directions in a developed photoresist. In an exemplary embodiment, the optical system can transform a first portion of a plane wave into a radial symmetric wave with a constant angle of incidence onto a photoresist plane of a wafer. This radial symmetric wave can then interfere with a second portion of the plane wave incident but with a different angle of incidence to produce a periodic spatially-varying intensity pattern with circular symmetry.

Abstract: Exemplary embodiments provide tunable laser devices, methods for making the laser devices and methods for tuning the laser devices. The tunable laser devices can include an optically pumped semiconductor laser heterostructure, on which a distributed-feedback (DFB) laser grating having variable grating spacings (or chirps) can be formed. The optically pumped semiconductor laser heterostructure can be an optically pumped type-II quantum well laser structure. The emission wavelength of the tunable laser devices can be tuned by changing positions of the region illuminated by the pump laser and with respect to the chirped DFB grating. The disclosed laser devices and methods can provide tunable laser emission with a combination of narrow linewidth and high output power that can be used for remote sensing applications and/or spectroscopic applications across the entire mid infrared (IR) spectral region.

Abstract: Exemplary embodiments provide an image interferometric microscope (IIM) and methods for image interferometric microscopy. The disclosed IIM can approach the linear systems limits of optical resolution by using a plurality of off-axis illuminations to access high spatial frequencies along with interferometric reintroduction of a zero-order reference beam on the low-NA side of the optical system. In some embodiments, a thin object can be placed normal to the optical axis and the frequency space limit can be extended to about [(1+NA)n/?], where NA is the numerical-aperture of the objective lens used, n is the refraction index of the transmission medium and A is an optical wavelength. In other embodiments, tilting the object plane can further allow collection of diffraction information up to the material transmission bandpass limited spatial frequency of about 2n/?.

Abstract: Methods for forming {110} type facets on a (001) oriented substrate of Group III-V compounds and Group IV semiconductors using selective epitaxial growth is provided. The methods include forming a dielectric film on a (100) substrate. The dielectric film can then be patterned to expose a portion of the substrate and to form a substrate-dielectric film boundary substantially parallel to a <110> direction. A {110} type sidewall facet can then be formed by epitaxially growing a semiconductor layer on the exposed portion of the substrate and the dielectric film.

Abstract: A method for separation of mixtures in fluidic systems through electrokinetic transport by use of nanochannels when the fluidic systems approach the size of an electrical double layer, thereby allowing separation based on charge. The disclosed apparatus comprises a T-chip with a nanochannel section. The method and apparatus are useful for separation of many molecular species, including peptides, proteins, and DNA.

Abstract: Methods for forming {110} type facets on a (001) oriented substrate of Group III-V compounds and Group IV semiconductors using selective epitaxial growth is provided. The methods include forming a dielectric film on a (100) substrate. The dielectric film can then be patterned to expose a portion of the substrate and to form a substrate-dielectric film boundary substantially parallel to a <110> direction. A {110} type sidewall facet can then be formed by epitaxially growing a semiconductor layer on the exposed portion of the substrate and the dielectric film.

Abstract: Methods for forming {110} type facets on a (001) oriented substrate of Group III-V compounds and Group IV semiconductors using selective epitaxial growth is provided. The methods include forming a dielectric film on a (100) substrate. The dielectric film can then be patterned to expose a portion of the substrate and to form a substrate-dielectric film boundary substantially parallel to a <110> direction. A {110} type sidewall facet can then be formed by epitaxially growing a semiconductor layer on the exposed portion of the substrate and the dielectric film.

Abstract: Electromagnetic radiation detector elements and methods for detecting electromagnetic radiation, in particular, infrared radiation, are provided. The electromagnetic radiation detector element can include an electromagnetic radiation detector and a plasmonic antenna disposed over the electromagnetic radiation detector. The plasmonic antenna can include a metal film, a sub-wavelength aperture in the metal film, and a plurality of circular corrugations centered around the sub-wavelength aperture.

Abstract: According to various embodiments, the present teachings relate to Generalized Transverse Bragg Waveguides (GTBW) that can include an a dielectric core having an index of refraction n1 and an optical axis. The optical waveguide can further include a media having an index of refraction n2 bounding a top surface and a bottom surface of the dielectric core, wherein n2<n1. The optical waveguide can also include a first dielectric cladding bounding a first side of the dielectric core, wherein the first dielectric cladding has a first periodic spatially varying index of refraction, and a second dielectric cladding bounding a second side of the dielectric core, wherein the second dielectric cladding has a second periodic spatially varying index of refraction. The direction of the first periodic spatially varying index of refraction and the direction of the second periodic spatially varying index of refraction can be at an angle other than normal or parallel to the optical axis.

Abstract: Exemplary embodiments provide methods for patterning large areas, beyond those accessible with the limited single-area exposure techniques, with nanometer scale features. The methods can include forming a grating pattern to make a first interferometric exposure of a first portion of a photosensitive material disposed over a substrate by interfering two or more laser beams, wherein the two or more laser beams comprise an apodized intensity profile having a continuous intensity variation. The method can further include aligning and overlapping the grating pattern to expose a second portion of the photosensitive material such that the first portion and the second portion form a continuous grating pattern.

Abstract: Exemplary embodiments provide optical systems and methods for producing interferometric lithography (IL) patterns with circular symmetry for applications such as memory devices including CD ROMs, DVDs, magnetic hard disk storage, and the like. Specifically, one or more axicon optics can be configured in the optical systems for IL patterning processes to form a uniform set of rings with constant increment in all directions in a developed photoresist. In an exemplary embodiment, the optical system can transform a first portion of a plane wave into a radial symmetric wave with a constant angle of incidence onto a photoresist plane of a wafer. This radial symmetric wave can then interfere with a second portion of the plane wave incident but with a different angle of incidence to produce a periodic spatially-varying intensity pattern with circular symmetry.

Abstract: The present invention provides a matrix comprising an array of nanostructures that exhibit a variation (gradient) in physical properties (such as size or pitch) in at least one direction of the plane containing said array. A method for forming an array having a gradient property is also provided. In addition, a separation method is provided comprising the steps of: providing a matrix comprising an array of nanostructures arranged so that the array has the property of a gradient; and conducting at least one biomolecule separation process to separate biomolecules in a composition containing a plurality of biomolecules using the matrix.

Abstract: A new and useful technique for growing an epilayer onto a substrate is provided. An epilayer is grown on a substrate by (a) providing a patterned substrate comprising a plurality of isolated nanoscale nucleation sites, and (b) growing an epilayer selectively on the nanoscale nucleation sites, in a manner which localizes strain at the substrate-epilayer interface, and enables strain to reduce as the thickness of the epilayer increases.

Abstract: The present invention provides a nanostructured device comprising a substrate including nanotroughs therein; and a lipid bilayer suspended on or supported in the substrate. A separation method is also provided comprising the steps of supporting or suspending a lipid bilayer on a substrate; wherein the substrate comprises nanostructures and wherein the lipid bilayer comprises at least one membrane associated biomolecule; and applying a driving force to the lipid bilayer to separate the membrane associated biomolecule from the lipid bilayer and to drive the membrane associated biomolecule into the nanostructures.

Abstract: The present invention provides a method for inducing a refractive index change in a lead silicate glass material comprising: providing a lead silicate glass material; and irradiating the lead silicate glass material to increase the index of refraction of said lead silicate glass material. The present invention also provides a photo-induced lead silicate glass grating.

Abstract: The present invention provides a method of fabricating an electro-optically active fiber segment comprising the steps, in any order, of inducing a second-order nonlinearity in the fiber segment, and placing a portion of the fiber segment between and in contact with two electrodes. Also, the present invention provides an electro-optically active fiber segment comprising a second-order nonlinearity induced within the fiber segment, and a portion of the fiber segment being between and in contact with a first electrode and a second electrode.

Abstract: The present invention involves the use of pupil plane filters to enhance optical imaging for both lithography and microscopy. The present invention includes numerous pupil plane filter strategies for enhancing optical lithography. A square pupil plane filter suitably restricts the imaging to a nearly diffraction limited regime. Moreover, pupil plane filters are suitably used in off-axis illumination (OAI) and imaging interferometric lithography (ILL). The techniques of OAI and ILL along with the use of pupil-plane filters are applicable in, for example, any diffraction-limited situation where the limit is imposed by the characteristics of the optical system rather than the transmission medium and where the illumination system is under the control of the experimenter.

Abstract: The present invention provides methods and apparatus for defining a single structure on a semiconductor wafer by spatial frequency components whereby some of the spatial frequency components are derived by optical lithography and some by interferometric lithographic techniques. Interferometric lithography images the high frequency components while optical lithography images the low frequency components. Optics collects many spatial frequencies and the interferometry shifts the spatial frequencies to high spatial frequencies. Thus, because the mask does not need to provide high spatial frequencies, the masks are configured to create only low frequency components, thereby allowing fabrication of simpler masks having larger structures. These methods and apparatus facilitate writing more complex repetitive as well as non-repetitive patterns in a single exposure with a resolution which is higher than that currently available using known optical lithography alone.

Abstract: A low-cost fabrication technique, readily extensible to volume manufacturing is presented for an electro-optically active fiber segment (31) that can be simply integrated into optoelectronic devices. The fabrication technique offers a dielectric isolation structure (16, 17) surrounding the fiber (10) to allow high field poling, a pair of electrodes (37, 38) used both for poling and for inducing an electro-optic effect, and ends of the fiber (18, 19) unaffected by the fabrication and available for splicing with additional fiber sections. The technique is readily adaptable to specialized electrode structures including striplines and/or microstrip lines for high frequency applications and segmented electrodes (52) for quasi-phasematched three-wave mixing applications. By combining the electro-optically active fiber segment (31) with other fibers in an integrated fiber modulator, high frequency modulation of an optical signal may be achieved with applications in telecommunications.

Abstract: The present invention provides a nanostructured device comprising a substrate including nanotroughs therein; and a lipid bilayer suspended on or supported in the substrate. A separation method is also provided comprising the steps of supporting or suspending a lipid bilayer on a substrate; wherein the substrate comprises nanostructures and wherein the lipid bilayer comprises at least one membrane associated biomolecule; and applying a driving force to the lipid bilayer to separate the membrane associated biomolecule from the lipid bilayer and to drive the membrane associated biomolecule into the nanostructures.